Datasheet MRF166C Datasheet (M A COM)

SEMICONDUCTOR TECHNICAL DATA

The RF MOSFET Line

RF Power Field Effect Transistors

N–Channel Enhancement Mode MOSFETs

Designed primarily for wideband large–signal output and driver from 30–500

MHz.

• MRF166C — Guaranteed Performance at 500 MHz, 28 Vdc Output Power = 20 W Gain = 13.5 dB Efficiency = 50%

• Replacement for Industry Standards such as MRF136, DV2820, BLF244,

SD1902, and ST1001

• 100% Tested for Load Mismatch at all Phase Angles with 30:1 VSWR

• Facilitates Manual Gain Control, ALC and Modulation Techniques

• Excellent Thermal Stability , Ideally Suited for Class A Operation

• Low C

• Circuit board photomaster available upon request by

contacting RF Tactical Marketing in Phoenix, AZ.

— 4.0 pF @ VDS = 28 V

rss

Order this document

by MRF166C/D

MRF166C

20 W, 500 MHz

MOSFET

BROADBAND

RF POWER FETs

G

MAXIMUM RATINGS

Rating Symbol Value Unit

Drain–Gate Voltage V Drain–Gate Voltage

(RGS = 1.0 MΩ) Gate–Source Voltage V Drain Current — Continuous I Total Device Dissipation @ TC = 25°C

Derate Above 25°C Storage Temperature Range T Operating Junction Temperature T

THERMAL CHARACTERISTICS

Characteristic Symbol Max Unit

Thermal Resistance, Junction to Case R

V

D

DSS

DGR

GS

D

P

D

stg

J

θJC

CASE 319–07, STYLE 3

S

65 Vdc 65 Vdc

±20 Adc

4.0 Adc 70

0.4

–65 to 150 °C

200 °C

2.5 °C/W

Watts

W/°C

NOTE — CAUTION — MOS devices are susceptible to damage from electrostatic charge. Reasonable precautions in handling and packaging MOS devices should be observed.

REV 10

1

ELECTRICAL CHARACTERISTICS (T

Characteristic Symbol Min Typ Max Unit

OFF CHARACTERISTICS

Drain–Source Breakdown Voltage

(VGS = 0 V, ID = 5.0 mA)

Zero Gate Voltage Drain Current

(VDS = 28 V, VGS = 0 V)

Gate–Source Leakage Current

(VGS = 20 V, VDS = 0 V)

ON CHARACTERISTICS

Gate Threshold Voltage

(VDS = 10 V, ID = 25 mA)

Forward Transconductance

(VDS = 10 V, ID = 1.5 A)

DYNAMIC CHARACTERISTICS

Input Capacitance

(VDS = 28 V, VGS = 0 V, f = 1.0 MHz)

Output Capacitance

(VDS = 28 V, VGS = 0 V, f = 1.0 MHz)

Reverse Transfer Capacitance

(VDS = 28 V, VGS = 0 V, f = 1.0 MHz)

FUNCTIONAL CHARACTERISTICS

Common Source Power Gain

(VDD = 28 V, P

Drain Efficiency

(VDD = 28 V, P

Electrical Ruggedness

(VDD = 28 V, P Load VSWR 30:1 at All Phase Angles)

= 20 W, f = 500 MHz, IDQ = 25 mA)

out

= 20 W, f = 500 MHz, IDQ = 25 mA)

out

= 20 W, f = 500 MHz, IDQ = 25 mA,

out

= 25°C unless otherwise noted)

C

V

(BR)DSS

I

DSS

I

GSS

V

GS(th)

g

C

oss

C

G

ψ No Degradation in Output Power

65 — — V

— — 0.5 mA

— — 1.0 µA

1.5 3.0 4.5 V

fs

iss

rss

ps

η 50 55 — %

0.8 1.1 — mhos

— 28 — pF

— 30 — pF

— 4.0 — pF

13.5 16 — dB

REV 10

2

RF

INPUT

Z3

BIAS

C1

R3

RFC1

C9

C8

R2

C4

RFC2

R1

Z1

C2

C3

DUT

Z2

C5

C10

C6

C7

VDD = 28 V

+

C11

–

OUTPUT

Z4

+

Vdc

–

RF

C1, C7 200 pF, Chip Capacitor C2, C6 2–10 pF, Trimmer Capacitor, Johansen C3 27 pF, ATC 100 mil Chip Capacitor C4, C8 0.1 µF, Chip Capacitor C5 15 pF, ATC 100 mil Chip Capacitor C9, C10 680 pF, Feedthru Capacitor C11 50 µF, 50 V, Electrolytic Capacitor R1 120 Ω, 1/2 W Resistor R2 10 kΩ, 1/2 W Resistor R3 1 kΩ, 1/2 W Resistor RFC1 Ferroxcube VK200 19/4B RFC2 10 Turns AWG #18, 0.125″I.D., Enameled Board Material 0.062″ Teflon Fiberglass

1 oz. Copper Clad Both Sides

εr = 2.56

Figure 1. MRF166C 500 MHz T est Circuit

TYPICAL CHARACTERISTICS

100

Z1 0.120″ x 3.3″, Microstrip Line

350 mils

C2

600 mils

C3

Z2 0.120″ x 2.1″, Microstrip Line

C5 C6

825 mils

1650 mils

Z3, Z4 0.120″ x 0.25″, Microstrip Line

10

C

oss

C

iss

C

rss

C, CAPACITANCE (pF)

50

20

10

5

2 1

VGS = 0 V f = 1 MHz

VDS, DRAIN–SOURCE VOLTAGE (VOLTS)

Figure 2. Capacitance versus Drain–Source V oltage

REV 10

3

TC = 25°C

1

, DRAIN CURRENT (AMPS)

D

I

2520151050

0.1 VDS, DRAIN–SOURCE VOLTAGE (VOLTS)

100100

Figure 3. DC Safe Operating Area

TYPICAL CHARACTERISTICS

, OUTPUT POWER (WATTS)

out

P

, OUTPUT POWER (WATTS)

out

P

32 28

275 MHz

24 20 16 12

8 4

0

400 MHz

f = 500 MHz

Pin, INPUT POWER (WA TTS)

Figure 4. Output Power versus Input Power

40

f = 500 MHz

35

IDQ = 25 mA

30 25 20 15 10

5

VDD = 28 V IDQ = 25 mA

0.40.30.2 0.55

0.50.450.350.250.150.10.050

Pin = 1 W

0.5 W

0.18 W

0.6

, OUTPUT POWER (WATTS)

out

P

, OUTPUT POWER (WATTS)

out

P

12

10

8

6

4

2

0

400 MHz

f = 500 MHz

Pin, INPUT POWER (WA TTS)

Figure 5. Output Power versus Input Power

35

f = 400 MHz

30

IDQ = 25 mA

25

20

15

10

5

VDD = 13.5 V IDQ = 25 mA

0.40.350.250.1

Pin = 0.5 W

0.3 W

0.15 W

0.5

0.450.30.20.150.050

0

Pin, INPUT POWER (WA TTS)

Figure 6. Output Power versus Supply Voltage

28

2624222018161412

0

Pin, INPUT POWER (WA TTS)

282624222018161412

Figure 7. Output Power versus Supply Voltage

REV 10

4

400 MHz

500 MHz

400 MHz

ZOL*

Zo = 10 Ω

f = 290 MHz

VDD = 28 V, IDQ = 25 mA, P

f

MHz

500 400 290

ZOL* =Conjugate of the optimum load impedance into

which the device output operates at a given output power, voltage and frequency.

Z

in

Ohms

2.09 – j2.77

0.93 – j3.80

2.63 – j7.58

= 20 Watts

out

ZOL*

Ohms

4.87 – j2.63

3.09 – j5.24

7.35 – j8.67

Z

in

f = 290 MHz

Figure 8. Series Equivalent Input and Output Impedance

REV 10

5

Figure 9. MRF166C T est Fixture

f

MHz

ÁÁÁÁ

30 40 50 60 70 80

90 100 110 120 130 140 150 160 170 180 190 200 210 220 230 240 250 260 270 280 290 300 310 320 330 340 350 360 370 380 390 400 410 420 430 440

T able 1. Common Source S–Parameters (VDS = 12.5 V, ID = 1.25 A)

S

11

|S11| φ |S21| φ |S12| φ |S22| φ

0.840

0.836

0.832

0.829

0.826

0.822

0.818

0.819

0.821

0.820

0.818

0.820

0.821

0.820

0.821

0.822

0.823

0.825

0.827

0.829

0.831

0.832

0.831

0.833

0.836

0.837

0.838

0.839

0.840

0.843

0.845

0.846

0.847

0.848

0.850

–142 –151 –156 –159 –162 –164 –165 –167 –168 –169 –169 –170 –170 –171 –171 –171 –172 –172 –173 –173 –173 –173 –174 –174 –174 –174 –174 –174 –174 –175 –175 –175 –175 –175 –176 –176 –176 –176 –176 –176 –176 –176

22.59

17.4

14.1

12.0

10.4

9.09

8.07

7.28

6.61

6.00

5.56

5.22

4.86

4.52

4.23

4.03

3.86

3.62

3.39

3.25

3.12

2.96

2.83

2.71

2.62

2.52

2.42

2.32

2.25

2.18

2.10

2.00

1.95

1.90

1.84

1.77

1.71

1.66

1.64

1.59

1.52

1.48

S

21

105 100

97 94 91 90 89 87 85 83 83 82 80 79 79 78 76 75 75 74 72 71 70 70 69 68 66 66 66 65 63 62 62 61 60 59 59 58 57 56 56 56

0.025

0.026

0.027

0.026

0.027

0.028

0.026

0.027

0.026

0.027

0.028

0.027

0.028

0.029

0.030

S

12

20 17 15 14 14 14 14 14 14 15 16 17 17 17 20 20 20 20 22 24 23 24 26 27 28 29 30 32 33 34 35 35 39 39 40 41 42 46 46 46 47 49

0.727

0.743

0.751

0.764

0.763

0.765

0.774

0.773

0.771

0.778

0.785

0.786

0.781

0.774

0.799

0.784

0.780

0.795

0.823

0.791

0.789

0.791

0.801

0.807

0.788

0.792

0.797

0.810

0.812

0.789

0.806

0.817

0.811

0.805

0.801

0.845

0.836

0.823

0.816

S

22

–155 –161 –164 –166 –168 –169 –170 –171 –172 –172 –172 –172 –173 –173 –172 –173 –174 –175 –174 –173 –175 –175 –174 –174 –174 –175 –175 –175 –174 –174 –175 –176 –173 –174 –175 –175 –175 –172 –174 –176 –176 –174

REV 10

6

ÁÁÁÁ

f

ÁÁÁÁ

REV 10

7

f

MHz

450 460 470 480 490 500 600 700 800 900

1000

MHz

30 40 50 60 70 80

90 100 110 120 130 140 150 160 170 180 190 200 210 220 230 240 250 260 270 280 290 300

T able 1. Common Source S–Parameters (VDS = 12.5 V, ID = 1.25 A) (continued)

S

22

–174 –178 –176 –176 –175 –175

180 179 174 176 173

0.851

0.853

0.856

0.857

0.859

0.857

0.884

0.881

0.890

0.897

S

12

51 48 51 53 54 54 73 65 83 71 60

0.851

0.849

0.830

0.834

0.841

0.847

0.877

0.881

0.890

0.885

0.931

1.47

1.42

1.37

1.34

1.32

1.28

S

21

54 53 53 53 52 51 41 34 30 26 24

0.032

0.031

0.032

0.033

0.034

0.032

0.047

0.031

0.069

0.090

S

11

–176 –177 –177 –177 –177 –177

178 176 173 172 170

0.988

0.789

0.684

0.580

0.503

T able 2. Common Source S–Parameters (VDS = 28 V, ID = 1.25 A)

S

11

|S11| φ |S21| φ |S12| φ |S22| φ

0.842

0.831

0.822

0.816

0.812

0.806

0.801

0.802

0.805

0.803

0.801

0.803

0.804

0.803

0.804

0.806

0.807

0.809

0.812

0.814

0.815

0.816

0.818

0.821

0.822

0.823

–125 –136 –143 –148 –152 –155 –157 –159 –161 –162 –163 –164 –165 –165 –166 –166 –166 –167 –168 –168 –168 –169 –169 –169 –169 –169 –170 –170

29.6

23.2

19.0

16.2

14.1

12.4

11.1

9.97

9.04

8.22

7.59

7.09

6.61

6.16

5.77

5.49

5.25

4.92

4.60

4.40

4.21

3.99

3.83

3.66

3.52

3.39

3.25

3.11

S

21

113 106 101

98 95 92 90 88 86 84 83 82 80 79 78 77 75 73 73 72 70 69 68 67 66 65 63 62

0.024

0.025

0.026

0.027

0.026

0.027

0.026

0.025

0.024

0.025

0.024

0.023

S

12

28 22 19 17 16 15 14 13 13 13 14 14 14 14 16 17 16 16 17 19 19 20 21 22 23 24 26 28

0.586

0.607

0.613

0.626

0.635

0.643

0.650

0.656

0.654

0.663

0.673

0.675

0.674

0.672

0.697

0.700

0.688

0.680

0.689

0.713

0.701

0.707

0.711

0.715

0.718

0.708

0.715

S

22

–136 –145 –151 –155 –157 –159 –160 –161 –163 –163 –163 –164 –164 –164 –164 –164 –165 –166 –165 –165 –167 –167 –166 –166 –166 –167 –168 –167

φ|S22|φ|S12|φ|S21|φ|S11|

f

ÁÁÁÁ

ÁÁÁÁ ÁÁÁÁ

f

MHz

310 320 330 340 350 360 370 380 390 400 410 420 430 440 450 460 470 480 490 500 600 700 800 900

1000

T able 2. Common Source S–Parameters (VDS = 28 V, ID = 1.25 A) (continued)

S

12

29 31 33 33 37 39 39 38 40 46 46 46 49 52 53 51 54 57 56 57 77 75 78 74 69

0.822

0.825

0.828

0.830

0.832

0.834

0.836

0.839

0.840

0.841

0.842

0.844

0.845

0.846

0.849

0.853

0.855

0.857

0.859

0.862

0.893

0.890

0.895

0.905

2.99

2.89

2.78

2.66

2.59

2.52

2.44

2.34

2.26

2.19

2.14

2.09

1.99

1.93

1.91

1.84

1.77

1.72

1.68

1.64

1.18

S

21

62 61 60 59 58 57 56 55 54 54 53 51 51 51 49 48 47 47 47 46 33 26 22 17 14

0.023

0.024

0.023

0.024

0.025

0.026

0.027

0.026

0.027

0.029

0.036

0.043

0.065

0.086

S

11

–170 –170 –171 –171 –171 –171 –171 –172 –172 –172 –172 –172 –173 –173 –173 –173 –173 –174 –174 –174 –179

178 175 173 171

0.921

0.771

0.635

0.544

0.725

0.734

0.736

0.724

0.739

0.757

0.755

0.745

0.738

0.735

0.787

0.790

0.777

0.770

0.794

0.803

0.787

0.789

0.796

0.802

0.851

0.856

0.880

0.882

0.931

S

22

φ|S22|φ|S12|φ|S21|φ|S11|

–166 –166 –167 –168 –166 –166 –167 –167 –168 –166 –167 –168 –168 –167 –167 –171 –170 –169 –168 –169 –173 –175 –178 –178

178

REV 10

8

P ACKAGE DIMENSIONS

IDENTIFICATION

NOTCH

H

M

Q 2 PL

0.15 (0.006) T A N

-N-

K

M

C

E

-T-

MM

SEATING PLANE

M

MM

NOTES:

1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982.

2. CONTROLLING DIMENSION: INCH.

INCHES MILLIMETER

MIN MINMAX MAX

DIM

0.965

A

0.355

B

0.230

C

0.115

D

0.102

E

0.075

F

0.160

H

0.004

J

0.090

K

0.725 BSC 18.42 BSC

L

0.225

N

0.125

Q

STYLE 3:

PIN 1. SOURCE (COMMON)

2. GATE (INPUT)

3. SOURCE (COMMON)

4. SOURCE (COMMON)

5. DRAIN (OUTPUT)

6. SOURCE (COMMON)

0.985

0.375

0.260

0.125

0.114

0.085

0.170

0.006

0.110

0.241

0.135

24.52

9.02

5.85

2.93

2.59

1.91

4.07

0.11

2.29

5.72

3.18

25.01

9.52

6.60

3.17

2.90

2.15

4.31

0.15

2.79

6.12

3.42

-AL

456

123

F

D 2 PL

0.38 (0.015) T A N

B

0.38 (0.015) T A N

J

CASE 319–07

ISSUE M

Specifications subject to change without notice.

n

North America: Tel. (800) 366-2266, Fax (800) 618-8883

n Asia/Pacific: Tel.+81-44-844-8296, Fax +81-44-844-8298 n

Europe: Tel. +44 (1344) 869 595, Fax+44 (1344) 300 020

Visit www.macom.com for additional data sheets and product information.

REV 10

9