Datasheet MRF166C Datasheet (Motorola)

1

MRF166CMOTOROLA RF DEVICE DATA

The RF MOSFET Line

 
  

N–Channel Enhancement Mode MOSFETs

Designed primarily for wideband large–signal output and driver from 30–500

MHz.

• Low C

rss

— 4.5 pF @ VDS = 28 V

• MRF166C — Typical Performance at 400 MHz, 28 Vdc
Output Power = 20 W
Gain = 17 dB
Efficiency = 55%

• Replacement for Industry Standards such as MRF136, DV2820, BLF244,

SD1902, and ST1001

• 100% Tested for Load Mismatch at all Phase Angles with 30:1 VSWR

• Facilitates Manual Gain Control, ALC and Modulation Techniques

• Excellent Thermal Stability, Ideally Suited for Class A Operation

• Circuit board photomaster available upon request by

contacting RF Tactical Marketing in Phoenix, AZ.

MAXIMUM RATINGS

Rating Symbol Value Unit

Drain–Gate Voltage V

DSS

65 Vdc

Drain–Gate Voltage

(RGS = 1.0 MΩ)

V

DGR

65 Vdc

Gate–Source Voltage V

GS

±40 Adc

Drain Current — Continuous I

D

4.0 Adc

Total Device Dissipation @ TC = 25°C

Derate Above 25°C

P

D

70

0.4

Watts

W/°C

Storage Temperature Range T

stg

–65 to 150 °C

Operating Junction Temperature T

J

200 °C

THERMAL CHARACTERISTICS

Characteristic Symbol Max Unit

Thermal Resistance, Junction to Case R

θJC

2.5 °C/W

NOTE — CAUTION — MOS devices are susceptible to damage from electrostatic charge. Reasonable precautions in handling and
packaging MOS devices should be observed.

Order this document

by MRF166C/D



SEMICONDUCTOR TECHNICAL DATA



20 W, 500 MHz

MOSFET

BROADBAND

RF POWER FETs

CASE 319–07, STYLE 3

 Motorola, Inc. 1995

D

G

S

REV 7

MRF166C
2

MOTOROLA RF DEVICE DATA

ELECTRICAL CHARACTERISTICS (T

C

= 25°C unless otherwise noted)

Characteristic

Symbol Min Typ Max Unit

OFF CHARACTERISTICS

Drain–Source Breakdown Voltage

(VGS = 0 V, ID = 5.0 mA)

V

(BR)DSS

65 — — V

Zero Gate Voltage Drain Current

(VDS = 28 V, VGS = 0 V)

I

DSS

— — 1.0 mA

Gate–Source Leakage Current

(VGS = 40 V, VDS = 0 V)

I

GSS

— — 1.0 µA

ON CHARACTERISTICS

Gate Threshold Voltage

(VDS = 10 V, ID = 25 mA)

V

GS(th)

1.0 3.0 6.0 V

Forward Transconductance

(VDS = 10 V, ID = 1.5 A)

g

fs

600 800 — mhos

DYNAMIC CHARACTERISTICS

Input Capacitance

(VDS = 28 V, VGS = 0 V, f = 1.0 MHz)

C

iss

— 30 — pF

Output Capacitance

(VDS = 28 V, VGS = 0 V, f = 1.0 MHz)

C

oss

— 35 — pF

Reverse Transfer Capacitance

(VDS = 28 V, VGS = 0 V, f = 1.0 MHz)

C

rss

— 4.5 — pF

FUNCTIONAL CHARACTERISTICS

Noise Figure

(VDD = 28 V, f = 30 MHz, IDQ = 50 mA)

NF — 2.5 — dB

Common Source Power Gain

(VDD = 28 V, P

out

= 20 W, f = 400 MHz, IDQ = 100 mA)

G

ps

14 17 — dB

Drain Efficiency

(VDD = 28 V, P

out

= 20 W, f = 400 MHz, IDQ = 100 mA)

η 50 55 — %

Electrical Ruggedness

(VDD = 28 V, P

out

= 20 W, f = 400 MHz, IDQ = 100 mA,

Load VSWR 30:1 at All Phase Angles)

ψ No Degradation in Output Power

3

MRF166CMOTOROLA RF DEVICE DATA

Figure 1. MRF166C 400 MHz Test Circuit

C1, C7 — 270 pF Chip Capacitor
C2, C6 — Johanson Trimmer Capacitor, 2–20 pF
C3 — 21 pF Mini Unelco
C4, C8, C9 — 0.01 µF
C5 — 18 pF Mini Unelco
C10, C11 — 680 pF Feed Through
C12, C13 — 50 µF, 50 V
D1 — 1N5925A Motorola Zener

Board Material — Teflon fiberglass
2 oz. Copper clad both sides, εr = 2.55

0.060″ Dielectric Thickness

L1 — #18 AWG, 2 Turns, 0.25″ ID 0.15″ Wide
L2 — #18 AWG Hairpin 0.7″ long, bend into hairpin
RFC1 — Ferroxcube VK200–19/4B
RFC2 — 18 Turns #18 AWG Enameled, 0.3″ ID
R1 — 220 Ω 1/2 Watt
R2 — 1.8 kΩ 1/4 Watt
R3 — 10 kΩ, 10 Turns Bourns
R4 — 10 k 1/4 Watt
Z1 — Microstrip Line 0.150″ wide, 0.420″ long
Z2 — Microstrip Line 0.150″ wide, 0.350″ long
Z3 — Microstrip Line 0.150″ wide, 0.350″ long
Z4 — Microstrip Line 0.150″ wide, 0.450″ long
Z5 — Microstrip Line 0.150″ wide, 1.1″ long
Z6 — Microstrip Line 0.150″ wide, 0.650″ long
Z7 — Microstrip Line 0.150″ wide, 0.200″ long

R3

C4 C13

D1

R2

RFC2

C8

C10

RFC1

C11

C12

+
–

+

–

Vdc

+
–

R4

C9

R1

RF INPUT

C1

Z1 Z2 L1 Z3 L2

Z4

C3

C2

D.U.T.

Z5 Z6 Z7

C7

C6C5

RF OUTPUT

VDD = 28 V

100

1

2

5

10

20

50

2520151050

C

oss

C

iss

C

rss

VGS = 0 V
f = 1 MHz

VDS, DRAIN–SOURCE VOLTAGE (VOLTS)

Figure 2. Capacitance versus Drain–Source Voltage

C, CAPACITANCE (pF)

100100

VDS, DRAIN–SOURCE VOLTAGE (VOLTS)

Figure 3. DC Safe Operating Area

10

1

0.1

I

D

, DRAIN CURRENT (AMPS)

TYPICAL CHARACTERISTICS

TC = 25°C

MRF166C
4

MOTOROLA RF DEVICE DATA

VDS, DRAIN–SOURCE (VOLTS)

35
30

25

20

15

10

5
0

0.8

Pin, INPUT POWER (WATTS)

Figure 4. Output Power versus Input Power

0.70.60.50.40.30.20.10

P

o

, OUTPUT POWER (WATTS)

500 MHz

f = 400 MHz

VDS = 28 V
IDQ = 100 mA

16

14
12
10

8
6
4
2
0

0.8

Pin, INPUT POWER (WATTS)

0.70.60.50.40.30.20.10

f = 400 MHz

VDS = 13.5 V
IDQ = 100 mA

Figure 5. Output Power versus Input Power

32

28
24

20
16
12

8
4

0

28

Figure 6. Output Power versus Voltage

2624222018161412

Pin = 0.8 W

0.4 W

0.2 W

f = 400 MHz
IDQ = 100 mA

P

o

, OUTPUT POWER (WATTS)

P

o

, OUTPUT POWER (WATTS)

Figure 7. Series Equivalent Input and Output Impedance

f = 500 MHz

400

400

ZOL*

Z

in

VDD = 28 V, IDQ = 100 mA

Zo = 50

Ω

200

100

200

100

f = 500 MHz

ZOL* = Conjugate of the optimum load
impedance into which the device output
operates at a given output power, voltage and
frequency.

f

MHz

Z

in

OHMS

ZOL*

OHMS

100
200
400
500

11.0 – j21.0

4.20 – j12.6

1.90 – j5.80

1.50 – j4.10

8.50 – j10.0

6.00 – j9.00

4.50 – j6.70

4.20 – j5.40

(P

out

= 20 W)

TYPICAL CHARACTERISTICS

5

MRF166CMOTOROLA RF DEVICE DATA

PACKAGE DIMENSIONS

CASE 319–07

ISSUE M

0.965

0.355

0.230

0.115

0.102

0.075

0.160

0.004

0.090

0.225

0.125

0.985

0.375

0.260

0.125

0.114

0.085

0.170

0.006

0.110

0.241

0.135

24.52

9.02

5.85

2.93

2.59

1.91

4.07

0.11

2.29

5.72

3.18

25.01

9.52

6.60

3.17

2.90

2.15

4.31

0.15

2.79

6.12

3.42

MM

MIN MINMAX MAX

INCHES MILLIMETER

DIM

A
B
C
D
E
F
H
J
K
L
N
Q

NOTES:

1. DIMENSIONING AND TOLERANCING PER
ANSI Y14.5M, 1982.

2. CONTROLLING DIMENSION: INCH.

0.725 BSC 18.42 BSC

SEATING
PLANE

IDENTIFICATION

NOTCH

1 2 3

456

F

J

B

H

E

K

L

0.15 (0.006) T A N

M

-A-

-N-

-T-

Q 2 PL

D 2 PL

MM

0.38 (0.015) T A N

M

MM

0.38 (0.015) T A N

M

C

PIN 1. SOURCE (COMMON)

2. GATE (INPUT)

3. SOURCE (COMMON)

4. SOURCE (COMMON)

5. DRAIN (OUTPUT)

6. SOURCE (COMMON)

STYLE 3:

MRF166C
6

MOTOROLA RF DEVICE DATA

Motorola reserves the right to make changes without further notice to any products herein. Motorola makes no warranty , representation or guarantee regarding
the suitability of its products for any particular purpose, nor does Motorola assume any liability arising out of the application or use of any product or circuit,
and specifically disclaims any and all liability, including without limitation consequential or incidental damages. “T ypical” parameters can and do vary in different
applications. All operating parameters, including “T ypicals” must be validated for each customer application by customer’s technical experts. Motorola does
not convey any license under its patent rights nor the rights of others. Motorola products are not designed, intended, or authorized for use as components in
systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of
the Motorola product could create a situation where personal injury or death may occur. Should Buyer purchase or use Motorola products for any such
unintended or unauthorized application, Buyer shall indemnify and hold Motorola and its officers, employees, subsidiaries, affiliates, and distributors harmless
against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death
associated with such unintended or unauthorized use, even if such claim alleges that Motorola was negligent regarding the design or manufacture of the part.
Motorola and are registered trademarks of Motorola, Inc. Motorola, Inc. is an Equal Opportunity/Affirmative Action Employer.

How to reach us:
USA /EUROPE: Motorola Literature Distribution; JAPAN: Nippon Motorola Ltd.; Tatsumi–SPD–JLDC, Toshikatsu Otsuki,

P.O. Box 20912; Phoenix, Arizona 85036. 1–800–441–2447 6F Seibu–Butsuryu–Center, 3–14–2 Tatsumi Koto–Ku, Tokyo 135, Japan. 03–3521–8315

MFAX: [e-mail] – TOUCHTONE (602) 244–6609 HONG KONG: Motorola Semiconductors H.K. Ltd.; 8B Tai Ping Industrial Park,
INTERNET: http://Design–NET.com 51 Ting Kok Road, Tai Po, N.T., Hong Kong. 852–26629298

MRF166C/D

*MRF166C/D*

◊