(1) Thermal measurement performed using CW RF operating condition.
(2) Thermal resistance is determined under specified RF operating conditions by infrared measurement techniques.
θJC
60Vdc
4.0Vdc
4.0Adc
103
0.58
1.7°C/W
Watts
°C/W
REV 3
1
Page 2
ELECTRICAL CHARACTERISTICS (T
CharacteristicSymbolMinTypMaxUnit
OFF CHARACTERISTICS
Collector–Emitter Breakdown V oltage
(IC = 100 mAdc, VBE = 0)
Collector–Base Breakdown Voltage
(IC = 100 mAdc, IE = 0)
Emitter–Base Breakdown Voltage
(IE = 10 mAdc, IC = 0)
Collector Cutoff Current
(VCE = 28 Vdc, VBE = 0)
ON CHARACTERISTICS
DC Current Gain
(ICE = 1.0 Adc, VCE = 5.0 Vdc)
FUNCTIONAL TESTS
Collector–Base Amplifier Power Gain
(VCC = 28 Vdc, P
Collector Efficiency
(VCC = 28 Vdc, P
Input Return Loss
(VCC = 28 Vdc, P
Output Mismatch Stress
VCC = 28 Vdc, P
VSWR = 3:1, All phase angles at frequency of test
= 30 Watts, f = 1600/1640 MHz)
out
= 30 Watts, f = 1600/1640 MHz)
out
= 30 Watts, f = 1600/1640 MHz)
out
= 30 Watts, f = 1600 MHz, Load
out
= 25°C unless otherwise noted)
C
V
(BR)CES
V
(BR)CBO
V
(BR)EBO
I
CES
h
FE
G
pe
η
I
RL
Ψ
55——
55——
4.0
——
——10
203580
7.57.7—
4045—
8.0——
No Degradation in Output Power
Vdc
Vdc
Vdc
mAdc
—
dB
%
dB
REV 3
2
Page 3
L3
Board Material – Teflon Glass Laminate Dielectric
Thickness = 0.30
B1Fair Rite Bead on #24 Wire
C1, C5100 pF, B Case, ATC Chip Cap
C20.1 µF, Dipped Mica Cap
C30.1 µF, Chip Cap