SEMICONDUCTOR TECHNICAL DATA
Order this document
by MRF1507/D
The RF MOSFET Line
N–Channel Enhancement–Mode Lateral MOSFETs
The MRF1507 is designed for broadband commercial and industrial
applications at frequencies to 520 MHz. The high gain and broadband
performance of this device makes it ideal for large–signal, common source
amplifier applications in 7.5 volt portable FM equipment.
• Specified Performance @ 520 MHz, 7.5 Volts
Output Power — 8 Watts
Power Gain — 10 dB
Efficiency — 65%
• Characterized with Series Equivalent Large–Signal
Impedance Parameters
• Excellent Thermal Stability
• Capable of Handling 20:1 VSWR, @ 9.5 Vdc,
520 MHz, 2 dB Overdrive
• Broadband UHF/VHF Demonstration Amplifier
Information Available Upon Request
• RF Power Plastic Surface Mount Package
• Available in Tape and Reel by Adding T1 Suffix to
Part Number. T1 Suf fix = 1,000 Units per 12 mm, 7 Inch Reel.
G
D
S
8 W, 520 MHz, 7.5 V
LATERAL N–CHANNEL
BROADBAND
RF POWER MOSFET
CASE 466–02, STYLE 1
(PLD 1.5)
MAXIMUM RATINGS
Rating Symbol Value Unit
Drain–Source Voltage (1) V
Gate–Source Voltage V
Drain Current — Continuous I
Total Device Dissipation @ TC = 25°C
Derate above 25°C
Storage Temperature Range T
Operating Junction Temperature T
THERMAL CHARACTERISTICS
Characteristic Symbol Max Unit
Thermal Resistance, Junction to Case R
(1) Not designed for 12.5 volt applications.
NOTE – CAUTION
packaging MOS devices should be observed.
– MOS devices are susceptible to damage from electrostatic charge. Reasonable precautions in handling and
DSS
GS
D
P
D
stg
j
θJC
25 Vdc
±20 Vdc
4 Adc
62.5
0.50
–65 to +150 °C
150 °C
2 °C/W
Watts
W/°C
REV 1
Motorola, Inc. 1998
MRF1507 MRF1507T1MOTOROLA RF DEVICE DATA
1
ELECTRICAL CHARACTERISTICS (T
Characteristic Symbol Min Typ Max Unit
OFF CHARACTERISTICS
Zero Gate Voltage Drain Current
(VDS = 25 Vdc, VGS = 0)
Gate–Source Leakage Current
(VGS = 20 Vdc, VDS = 0)
ON CHARACTERISTICS
Gate Threshold Voltage
(VDS = 10 Vdc, ID = 100 µAdc)
Drain–Source On–Voltage
(VGS = 10 Vdc, ID = 2 Adc)
Forward Transconductance
(VDS = 10 Vdc, ID = 2 Adc)
DYNAMIC CHARACTERISTICS
Input Capacitance
(VDS = 7.5 Vdc, VGS = 0, f = 1 MHz)
Output Capacitance
(VDS = 7.5 Vdc, VGS = 0, f = 1 MHz)
Reverse Transfer Capacitance
(VDS = 7.5 Vdc, VGS = 0, f = 1 MHz)
FUNCTIONAL TESTS (In Motorola Test Fixture)
Common–Source Amplifier Power Gain
(VDD = 7.5 Vdc, Pin = 29 dBm, IDQ = 150 mA, f = 520 MHz)
Drain Efficiency
(VDD = 7.5 Vdc, Pin = 29 dBm, IDQ = 150 mA, f = 520 MHz)
P
out
(VDD = 7.5 Vdc, Pin = 29 dBm, IDQ = 150 mA, f = 520 MHz)
= 25°C unless otherwise noted)
C
I
DSS
I
GSS
V
GS(th)
V
DS(on)
g
fs
C
iss
C
oss
C
rss
G
ps
η 50 65 — %
P
out
— — 1 µAdc
— — 1 µAdc
2.5 3.4 — Vdc
0.3 0.44 — Vdc
1.30 1.80 — S
— 48 — pF
— 40.5 — pF
— 5.2 — pF
10 11 — dB
8 9.9 — W
MRF1507 MRF1507T1
2
MOTOROLA RF DEVICE DATA
B1
V
+
DD
C5C4
R1
R2
R3
C3
C6
L1
V
GG
C1
+
C2
RF
INPUT
N1
Z1 Z2 Z3 Z4
C8
C7
B1 Fair Rite Products Long Ferrite Bead
C1, C5 0.1 µF, 100 mil Chip Capacitor
C2, C4 10 µF, 50 V Electrolytic Capacitor
C3, C6, C8, C14 130 pF, 100 mil Chip Capacitor
C7, C9, C13 0.3–20 pF Trimmer Capacitor
C10 82 pF, 100 mil Chip Capacitor
C11 39 pF, 100 mil Chip Capacitor
C12 32 pF, 100 mil Chip Capacitor
L1 4 Turns, #20 AWG Enamel, 0.1″ID
N1, N2 Type N Connectors
R1 1.1 MΩ, 1/4 W Carbon
R2 2 kΩ, 1/2 W Carbon
R3 100 Ω, 1/4 W Carbon
C9
R4
C10
Z5 Z6
Figure 1. 500 – 520 MHz Broadband T est Circuit
C11
Z7
Z8
DUT
C12
R4 20 Ω, 1/4 W Carbon
Z1 0.459″ x 0.083″ Microstrip
Z2 0.135″ x 0.083″ Microstrip
Z3 1.104″ x 0.083″ Microstrip
Z4 0.1 14 ″ x 0.083″ Microstrip
Z5 0.154″ x 0.083″ Microstrip
Z6 0.259″ x 0.213″ Microstrip
Z7 0.217″ x 0.213″ Microstrip
Z8 0.175″ x 0.083″ Microstrip
Z9 0.747″ x 0.083″ Microstrip
Z10 0.608″ x 0.083″ Microstrip
Z11 0.594″ x 0.083″ Microstrip
Board Glass Teflon, 31 mils
Z9
Z10 Z11
C14
C13
N2
RF
OUTPUT
11
10
, OUTPUT POWER (WATTS)
out
P
9
8
7
6
5
4
3
2
1
440 MHz
400 MHz
0.710.30 1.10 1.51
0.50 1.31
Pin, INPUT POWER (WATTS)
0.90
Figure 2. Output Power versus Input Power
TYPICAL CHARACTERISTICS
12
11
10
470 MHz
VDD = 7.5 V
IDQ = 200 mA
9
8
7
, OUTPUT POWER (WATTS)
6
out
P
5
4
6100.10
IDQ = 200 mA
7
VDD, SUPPLY VOLT AGE (V)
8
Figure 3. Output Power versus
Supply V oltage @ 400 MHz
700 mW
500 mW
Pin = 300 mW
9
MRF1507 MRF1507T1MOTOROLA RF DEVICE DATA
3
TYPICAL CHARACTERISTICS
13
12
IDQ = 200 mA
11
10
9
8
7
, OUTPUT POWER (WATTS)
6
out
P
5
4
6
79
VDD, SUPPLY VOLT AGE (V)
8
Figure 4. Output Power versus
Supply V oltage @ 470 MHz
9
8.5
7.5
, OUTPUT POWER (WATTS)
out
P
6.5
8
7
6
0
f = 440 MHz
f = 400 MHz
50 100 150 250 500300 350 400
200
IDQ, GATE CURRENT (mA)
700 mW
500 mW
Pin = 300 mW
f = 470 MHz
VCC = 7.5 V
Pin = 0.6 W
450
10
13
12
11
10
9
8
7
, OUTPUT POWER (WATTS)
6
out
P
5
4
20
16
12
(WATTS)
out
P
8
GAIN (dB),
4
0
IDQ = 200 mA
796
VDD, SUPPLY VOLT AGE (V)
8
Figure 5. Output Power versus
Supply V oltage @ 440 MHz
DRAIN EFFICIENCY
GAIN
P
out
5
674
VDD, DRAIN VOLTAGE (V)
700 mW
500 mW
Pin = 300 mW
10
80
70
60
50
f = 520 MHz
IDQ = 150 mA
Pin = 0.7 W
8910
DRAIN EFFICIENCY (%)
40
30
Figure 6. Output Power versus Gate Current
12
GAIN
10
, OUTPUT POWER (WATTS)
out
P
(dB),
p
G
8
0
0.1 0.80.4 0.50.2 0.6 0.9 1.0
0.3
Figure 8. P
IDQ (A)
out
0.7
versus I
MRF1507 MRF1507T1
4
P
out
f = 520 MHz
VDD = 7.5 V
Pin = 0.7 W
DQ
15
10
out
P
5
GAIN (dB), (WATTS)
0
15
Figure 7. Gain, P
, Efficiency
out
versus Drain V oltage
GAIN
DRAIN EFFICIENCY
P
P
out
out
f = 520 MHz
VDD = 7.5 V
IDQ = 150 mA
17 19 21 2725 29
INPUT POWER (dBm)
Figure 9. P
, Gain, Drain Efficiency versus P
out
23
MOTOROLA RF DEVICE DATA
70
60
50
40
DRAIN EFFICIENCY (%)
30
20
in
TYPICAL CHARACTERISTICS
12
10
6
, OUTPUT POWER (WATTS)
out
P
12
10
8
4
2
0
4
8
f = 500 MHz
VDD = 7.5 V
Figure 10. P
f = 520 MHz
VDD = 7.5 V
6
VDS, DRAIN VOLTAGE (V)
795
versus Drain V oltage
out
8
700 mW
500 mW
Pin = 250 mW
700 mW
500 mW
10
12
10
, OUTPUT POWER (WATTS)
out
P
12
10
8
6
4
2
0
8
f = 500 MHz
VDD = 7.5 V
200 7000
Figure 11. P
400
IDQ, (mA)
500300 800100
out
600
versus I
Pin = 250 mW
DQ
700 mW
500 mW
900
1000
700 mW
500 mW
, OUTPUT POWER (WATTS)
out
P
12
11
10
, OUTPUT POWER (WATTS)
out
P
6
4
2
0
4
9
8
7
6
5
20
567 910
VDS, DRAIN VOLTAGE (V)
Figure 12. P
versus Drain V oltage
out
Pin, (dBm)
Pin = 250 mW
8
VDD = 9 V
VDD = 7.5 V
f = 135 MHz
IDQ = 800 mA
242221 23 25
, OUTPUT POWER (WATTS)
out
P
17
15
13
11
, OUTPUT POWER (WATTS)
out
P
6
4
2
0
9
7
5
f = 520 MHz
VDD = 7.5 V
500 700100 300
200
21 22 24 25
400 6000
IDQ, (mA)
Figure 13. P
Pin, (dBm)
versus I
out
800 900 1000
DQ
VDD = 9 V
VDD = 7.5 V
f = 155 MHz
IDQ = 800 mA
2320
Pin = 250 mW
Figure 14. P
versus P
out
in
Figure 15. P
versus P
out
in
MRF1507 MRF1507T1MOTOROLA RF DEVICE DATA
5
TYPICAL CHARACTERISTICS
17
15
13
11
, OUTPUT POWER (WATTS)
out
P
80
60
40
C, CAPACITANCE (pF)
20
4
VDD = 9 V
VDD = 7.5 V
9
7
5
21 22 24 25
Pin, (dBm)
Figure 16. P
versus P
out
f = 175 MHz
IDQ = 800 mA
2320
in
VDS = 10 V
3
2
, DRAIN CURRENT (AMPS)
1
D
I
0
0
14
2
VGS, GATE–SOURCE VOLTAGE (V)
TYPICAL DEVICE SHOWN
35
Figure 17. Drain Current versus Gate Voltage
6
(T ypical Device Shown)
5
VGS = 0 V
f = 1 MHz
C
iss
C
oss
4
3
2
, DRAIN CURRENT (AMPS)
D
I
1
TC = 25°C
C
0
5150
VDS, DRAIN–SOURCE VOLTAGE (V)
10
rss
20
0
0
VDS, DRAIN–SOURCE VOLTAGE (V)
10 100
Figure 18. Capacitance versus V oltage Figure 19. Maximum Rated Forward Biased
Safe Operating Area
MRF1507 MRF1507T1
6
MOTOROLA RF DEVICE DATA
f = 400 MHz
520
ZOL*
f = 135 MHz
175
ZOL*
f = 400 MHz
Zo = 10
Ω
ZOL*
Ω
2.5 – j0.5
2.7 – j0.6
2.5 – j1.2
Z
in
520
VDD = 7.5 V, IDQ = 150 mA, P
f
MHz
400
440
470
500
520 1.9 – j3.5 2.1 – j0.4
Zin= Conjugate of source impedance with parallel
20 Ω resistor and 82 pF capacitor in series
with gate.
Z
in
Ω
3.6 – j3.1
4.0 – j3.7
3.1 – j4.4
2.0 – j2.71
= 8 W
out
2.05 – j0.65
Z
in
f = 135 MHz
Zin= Conjugate of source impedance with parallel
175
VDD = 7.5 V, IDQ = 800 mA, P
f
MHz
135
155
175
10 Ω resistor and 1000 pF capacitor in series
with gate.
Z
in
Ω
6.2 – j15.1
8.29 – j16.9
5.33 – j17.0
out
= 8 W
ZOL*
Ω
2.3 – j1.8
2.5 – j0.8
2.6 – j0.6
ZOL* = Conjugate of the load impedance at given
output power, voltage, frequency , and ηD > 50 %.
Note: ZOL* was chosen based on tradeoffs between gain, drain efficiency , and device stability.
ZOL* = Conjugate of the load impedance at given
output power, voltage, frequency , and ηD > 50 %.
MRF1507 MRF1507T1MOTOROLA RF DEVICE DATA
7
T able 1. Common Source Scattering Parameters (VDS = 7.5 Vdc)
f
f
f
ID = 150 mA
S
f
MHz
50 0.76 –138 15.18 100 0.04 12 0.71 –141
100 0.77 –155 7.68 84 0.04 –3 0.72 –156
200 0.81 –162 3.53 65 0.03 –18 0.78 –162
300 0.85 –165 2.08 53 0.03 –27 0.83 –164
400 0.89 –167 1.37 44 0.03 –33 0.87 –166
500 0.91 –169 0.96 37 0.02 –36 0.90 –168
700 0.95 –171 0.54 27 0.01 –35 0.94 –170
850 0.96 –173 0.38 22 0.01 –30 0.95 –172
1000 0.97 –174 0.29 19 0.01 –19 0.96 –173
1200 0.98 –175 0.20 16 0.01 3 0.97 –174
|S11| ∠ φ |S21| ∠φ |S12| ∠φ |S22| ∠φ
11
S
21
S
12
S
22
ID = 800 mA
S
f
MHz
50 0.82 –152 16.58 98 0.03 9 0.79 –161
100 0.81 –165 8.37 88 0.03 1 0.80 –169
200 0.82 –170 4.08 76 0.02 –8 0.81 –172
300 0.84 –172 2.60 68 0.02 –13 0.83 –173
400 0.85 –172 1.84 61 0.02 –17 0.84 –173
500 0.87 –172 1.38 54 0.02 –20 0.86 –173
700 0.90 –173 0.86 44 0.02 –21 0.89 –174
850 0.91 –174 0.64 38 0.01 –19 0.90 –174
1000 0.92 –175 0.49 33 0.01 –12 0.92 –175
1200 0.94 –176 0.36 29 0.01 2 0.93 –176
|S11| ∠ φ |S21| ∠φ |S12| ∠φ |S22| ∠φ
11
S
21
S
12
S
22
ID = 1.5 A
S
f
MHz
50 0.83 –156 16.45 97 0.02 9 0.80 –164
100 0.83 –167 8.29 88 0.02 1 0.81 –171
200 0.83 –172 4.06 77 0.02 –6 0.82 –174
300 0.84 –173 2.61 70 0.02 –10 0.83 –174
400 0.86 –173 1.86 63 0.02 –13 0.85 –174
500 0.87 –174 1.41 57 0.02 –15 0.86 –174
700 0.89 –174 0.89 47 0.01 –16 0.88 –175
850 0.91 –175 0.67 41 0.01 –13 0.90 –175
1000 0.92 –175 0.52 36 0.01 –6 0.91 –175
1200 0.93 –176 0.38 31 0.01 8 0.92 –176
|S11| ∠ φ |S21| ∠φ |S12| ∠φ |S22| ∠φ
11
S
21
S
12
S
22
MRF1507 MRF1507T1
MOTOROLA RF DEVICE DATA
8
APPLICATIONS INFORMATION
DESIGN CONSIDERATIONS
The MRF1507 is a common–source, RF power, N–Channel
enhancement mode, Lateral M
ield–Effect Transistor (MOSFET). Motorola Application Note
F
AN21 1A, “FET s in Theory and Practice”, is suggested reading
for those not familiar with the construction and characteristics
of FETs.
This surface mount packaged device was designed primarily for VHF and UHF portable power amplifier applications.
Manufacturability is improved by utilizing the tape and reel
capability for fully automated pick and placement of parts.
However, care should be taken in the design process to insure
proper heat sinking of the device.
The major advantages of Lateral RF power MOSFETs
include high gain, simple bias systems, relative immunity from
thermal runaway, and the ability to withstand severely
mismatched loads without suffering damage.
MOSFET CAPACITANCES
The physical structure of a MOSFET results in capacitors
between all three terminals. The metal oxide gate structure
determines the capacitors from gate–to–drain (C
gate–to–source (C
). The PN junction formed during fabrica-
gs
tion of the RF MOSFET results in a junction capacitance from
drain–to–source (C
as input (C
iss
). These capacitances are characterized
ds
), output (C
capacitances on data sheets. The relationships between the
inter–terminal capacitances and those given on data sheets
are shown below. The C
iss
1. Drain shorted to source and positive voltage at the gate.
2. Positive voltage of the drain in respect to source and
zero volts at the gate.
In the latter case, the numbers are lower. However , neither
method represents the actual operating conditions in RF
applications.
DRAIN CHARACTERISTICS
One critical figure of merit for a FET is its static resistance
in the full–on condition. This on–resistance, R
etal–Oxide Semiconductor
), and
gd
) and reverse transfer (C
oss
can be specified in two ways:
, occurs in
DS(on)
rss
the linear region of the output characteristic and is specified
at a specific gate–source voltage and drain current. The
drain–source voltage under these conditions is termed
V
. For MOSFET s, V
DS(on)
has a positive temperature
DS(on)
coefficient at high temperatures because it contributes to the
power dissipation within the device.
BV
values for this device are higher than normally
DSS
required for typical applications. Measurement of BV
recommended and may result in possible damage to the
device.
GATE CHARACTERISTICS
The gate of the RF MOSFET is a polysilicon material, and
is electrically isolated from the source by a layer of oxide. The
DC input resistance is very high – on the order of 10
resulting in a leakage current of a few nanoamperes.
Gate control is achieved by applying a positive voltage to
the gate greater than the gate–to–source threshold voltage,
.
V
GS(th)
Gate Voltage Rating — Never exceed the gate voltage
rating. Exceeding the rated V
can result in permanent
GS
damage to the oxide layer in the gate region.
Gate Termination — The gates of these devices are
essentially capacitors. Circuits that leave the gate open–circuited or floating should be avoided. These conditions can
)
result in turn–on of the devices due to voltage build–up on the
input capacitor due to leakage currents or pickup.
Gate Protection — These devices do not have an internal
monolithic zener diode from gate–to–source. If gate protection
is required, an external zener diode is recommended. Using
a resistor to keep the gate–to–source impedance low also
helps dampen transients and serves another important
function. Voltage transients on the drain can be coupled to the
gate through the parasitic gate–drain capacitance. If the
gate–to–source impedance and the rate of voltage change on
the drain are both high, then the signal coupled to the gate may
be large enough to exceed the gate–threshold voltage and
turn the device on.
DSS
is not
9
Ω —
MRF1507 MRF1507T1MOTOROLA RF DEVICE DATA
9
DC BIAS
Since the MRF1507 is an enhancement mode FET, drain
current flows only when the gate is at a higher potential than
the source. RF power FET s operate optimally with a quiescent
drain current (I
MRF1507 was characterized at I
), whose value is application dependent. The
DQ
= 150 mA, which is the
DQ
suggested value of bias current for typical applications. For
special applications such as linear amplification, I
may have
DQ
to be selected to optimize the critical parameters.
The gate is a dc open circuit and draws no current.
Therefore, the gate bias circuit may generally be just a simple
resistive divider network. Some special applications may
require a more elaborate bias system.
GAIN CONTROL
Power output of the MRF1507 may be controlled to some
degree with a low power dc control signal applied to the gate,
thus facilitating applications such as manual gain control,
ALC/AGC and modulation systems. This characteristic is very
dependent on frequency and load line.
MOUNTING
The specified maximum thermal resistance of 2°C/W
assumes a majority of the 0.065″ x 0.180″ source contact on
the back side of the package is in good contact with an
appropriate heat sink. As with all RF power devices, the goal
of the thermal design should be to minimize the temperature
at the back side of the package.
AMPLIFIER DESIGN
Impedance matching networks similar to those used with
bipolar transistors are suitable for the MRF1507. For examples see Motorola Application Note AN721, “Impedance
Matching Networks Applied to RF Power Transistors.” Large–
signal impedances are provided, and will yield a good first
pass approximation.
Since RF power MOSFETs are triode devices, they are not
unilateral. This coupled with the very high gain of the
MRF1507 yields a device capable of self oscillation. Stability
may be achieved by techniques such as drain loading, input
shunt resistive loading, or output to input feedback. The RF
test fixture implements a parallel resistor and capacitor in
series with the gate, and has a load line selected for a higher
efficiency, lower gain, and more stable operating region.
Two–port stability analysis with the MRF1507
S–parameters provides a useful tool for selection of loading or
feedback circuitry to assure stable operation. See Motorola
Application Note AN215A, “RF Small–Signal Design Using
Two–Port Parameters” for a discussion of two port network
theory and stability .
MRF1507 MRF1507T1
10
MOTOROLA RF DEVICE DATA
P ACKAGE DIMENSIONS
AF
Q
L
R
2
4
N
3
1
K
D
B
C
P
10 DRAFT
ZONE X
E
0.89 (0.035) X 45 5
"
_
_
NOTES:
_
U
H
G
ZONE W
J
RESIN BLEED/FLASH ALLOWABLE
STYLE 1:
PIN 1. DRAIN
2. GATE
3. SOURCE
4. SOURCE
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH
3. RESIN BLEED/FLASH ALLOWABLE IN ZONE V, W,
S
ZONE V
AND X.
DIM MIN MAX MIN MAX
A 0.255 0.265 6.48 6.73
B 0.225 0.235 5.72 5.97
C 0.065 0.072 1.65 1.83
D 0.130 0.150 3.30 3.81
E 0.021 0.026 0.53 0.66
F 0.026 0.044 0.66 1.12
G 0.050 0.070 1.27 1.78
H 0.045 0.063 1.14 1.60
J 0.160 0.180 4.06 4.57
K 0.273 0.285 6.93 7.24
L 0.245 0.255 6.22 6.48
N 0.230 0.240 5.84 6.10
P 0.000 0.008 0.00 0.20
Q 0.055 0.063 1.40 1.60
R 0.200 0.210 5.08 5.33
S 0.006 0.012 0.15 0.31
U 0.006 0.012 0.15 0.31
ZONE V 0.000 0.021 0.00 0.53
ZONE W 0.000 0.010 0.00 0.25
ZONE X 0.000 0.010 0.00 0.25
MILLIMETERSINCHES
CASE 466–02
ISSUE B
(PLD 1.5)
MRF1507 MRF1507T1MOTOROLA RF DEVICE DATA
11
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Opportunity/Affirmative Action Employer.
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USA/EUROPE/Locations Not Listed: Motorola Literature Distribution; JAPAN: Nippon Motorola Ltd.: SPD, Strategic Planning Office, 141,
P.O. Box 5405, Denver, Colorado 80217. 1–303–675–2140 or 1–800–441–2447 4–32–1 Nishi–Gotanda, Shagawa–ku, Tokyo, Japan. 03–5487–8488
Customer Focus Center: 1–800–521–6274
Mfax: RMFAX0@email.sps.mot.com – TOUCHTONE 1–602–244–6609 ASIA/PACIFIC: Motorola Semiconductors H.K. Ltd.; 8B Tai Ping Industrial Park,
Moto rola Fax Back System – US & Canada ONLY 1–800–774–1848 51 Ting Kok Road, Tai Po, N.T., Hong Kong. 852–26629298
– http://sps.motorola.com/mfax/
HOME PAGE: http://motorola.com/sps/
Mfax is a trademark of Motorola, Inc.
MRF1507 MRF1507T1
12
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MOTOROLA RF DEVICE DATA
MRF1507/D
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