Datasheet MRF140 Datasheet (Motorola)



SEMICONDUCTOR TECHNICAL DATA

The RF MOSFET Line

   

N–Channel Enhancement–Mode

Designed primarily for linear large–signal output stages up to 150 MHz

frequency range.

• Specified 28 Volts, 30 MHz Characteristics
Output Power = 150 Watts
Power Gain = 15 dB (Typ)
Efficiency = 40% (Typ)

• Superior High Order IMD

• IMD

• IMD

• 100% Tested For Load Mismatch At All Phase Angles With

30:1 VSWR

(150 W PEP) — –30 dB (Typ)

(d3)

(150 W PEP) — –60 dB (Typ)

(d1 1)

D

Order this document

by MRF140/D



150 W, to 150 MHz
N–CHANNEL MOS

LINEAR RF POWER

FET

G

S

CASE 211–11, STYLE 2

MAXIMUM RATINGS

Rating Symbol Value Unit

Drain–Source Voltage V
Drain–Gate Voltage V
Gate–Source Voltage V
Drain Current — Continuous I
Total Device Dissipation @ TC = 25°C

Derate above 25°C
Storage Temperature Range T
Operating Junction Temperature T

DSS

DGO

GS

D

P

D

stg

J

65 Vdc
65 Vdc

±40 Vdc

16 Adc

300

1.7

–65 to +150 °C

200 °C

Watts

W/°C

THERMAL CHARACTERISTICS

Characteristic Symbol Max Unit

Thermal Resistance, Junction to Case R

Handling and Packaging — MOS devices are susceptible to damage from electrostatic charge. Reasonable precautions in handling and
packaging MOS devices should be observed.

θJC

0.6 °C/W

REV 8

 Motorola, Inc. 1997

MRF140MOTOROLA RF DEVICE DATA

1

ELECTRICAL CHARACTERISTICS (T

Characteristic Symbol Min Typ Max Unit

= 25°C unless otherwise noted.)

C

OFF CHARACTERISTICS

Drain–Source Breakdown Voltage (VGS = 0, ID = 100 mA) V
Zero Gate Voltage Drain Current (VDS = 28 Vdc, VGS = 0) I
Gate–Body Leakage Current (VGS = 20 Vdc, VDS = 0) I

(BR)DSS

DSS
GSS

ON CHARACTERISTICS

Gate Threshold Voltage (VDS = 10 V, ID = 100 mA) V
Drain–Source On–Voltage (VGS = 10 V, ID = 10 Adc) V
Forward Transconductance (VDS = 10 V, ID = 5.0 A) g

GS(th)

DS(on)

fs

DYNAMIC CHARACTERISTICS

Input Capacitance (VDS = 28 V, VGS = 0, f = 1.0 MHz) C
Output Capacitance (VDS = 28 V, VGS = 0, f = 1.0 MHz) C
Reverse Transfer Capacitance (VDS = 28 V, VGS = 0, f = 1.0 MHz) C

iss

oss

rss

FUNCTIONAL TESTS (SSB)

Common Source Amplifier Power Gain (30 MHz)

(VDD = 28 V, P
Drain Efficiency

(VDD = 28 V, P

ID (Max) = 6.5 A)
Intermodulation Distortion (1)

(VDD = 28 V, P

f2 = 30.001 MHz, IDQ = 250 mA)
Load Mismatch

(VDD = 28 V, P

IDQ = 250 mA, VSWR 30:1 at all Phase Angles)

NOTE:

1. To MIL–STD–1311 Version A, Test Method 2204B, Two Tone, Reference Each Tone.

= 150 W (PEP), IDQ = 250 mA) (150 MHz)

out

= 150 W (PEP), f = 30; 30.001 MHz,

out

= 150 W (PEP), f1 = 30 MHz,

out

= 150 W (PEP), f = 30; 30.001 MHz,

out

G

ps

η — 40 — %

IMD

(d3)

IMD

(d11)

ψ

65 — — Vdc
— — 5.0 mAdc
— — 1.0 µAdc

1.0 3.0 5.0 Vdc

0.1 0.9 1.5 Vdc

4.0 7.0 — mhos

— 450 — pF
— 400 — pF
— 75 — pF

—
—

—
—

15

6.0

–30
–60

No Degradation in Output Power

—
—

—
—

dB

dB

+

BIAS

0–12 V

–

RF INPUT

C11 R4

T1

C2, C5, C6, C7, C8, C9 — 0.1 µF Ceramic Chip or

Monolythic with Short Leads
C3 — Arco 469
C4 — 820 pF Unencapsulated Mica or Dipped Mica

with Short Leads
C10 — 10 µF/100 V Electrolytic
C11 — 1 µF, 50 V, Tantalum
C12 — 330 pF, Dipped Mica (Short leads)

C5

R1

R3

C2

C6

DUT

R2

Figure 1. 30 MHz Test Circuit (Class AB)

C4

C7

C3

L1

C8

T2

C12

L1 — VK200/4B Ferrite Choke or Equivalent, 3.0 µH
L2 — Ferrite Bead(s), 2.0 µH
R1, R2 — 51 Ω/1.0 W Carbon
R3 — 1.0 Ω/1.0 W Carbon or Parallel Two 2 Ω, 1/2 W Resistors
R4 — 1 kΩ/1/2 W Carbon
T1 — 16:1 Broadband Transformer
T2 — 1:25 Broadband Transformer

L2

C9

+
–

C10

+
–

28 V

RF
OUTPUT

MRF140
2

MOTOROLA RF DEVICE DATA

25

20

15

10

POWER GAIN (dB)IMD, INTERMODULATION DISTORTION (dB)

VDD = 28 V
IDQ = 250mA

5

P

= 150 W (PEP)

out

0

25 010 20 50 100 200

f, FREQUENCY (MHz) Pin, INPUT POWER (WATTS)

Figure 2. Power Gain versus Frequency Figure 3. Output Power versus Input Power

200
160
120

80
40

0

0102030

200
160

, OUTPUT POWER (WATTS)

120

out

P

VDD = 28 V, IDQ = 250 mA

80
40

0

123456

30 MHz 150 MHz

–25
–30
–35
–40
–45

–30
–35
–40
–45
–50

VDD = 28 V, IDQ = 250 mA,
TONE SEPARATION = 1 kHz

0 20 40 60 80 120 160100 140

P

, OUTPUT POWER (WATTS PEP)

out

Figure 4. IMD versus P

out

10

8

VDS = 10 V
gfs = 6 mhos

6

1000

d

3

d

5

d

3

d

5

800

600

400

200

, UNITY GAIN FREQUENCY (MHz)

T

f

30 MHz 150 MHz

VDS = 20 V

10 V

0

0 5 10 15 20

ID, DRAIN CURRENT (AMPS)

Figure 5. Common Source Unity Gain

Frequency versus Drain Current

4

, DRAIN CURRENT (AMPS)

DS

I

2

0

02 6810

V

GS

4

, GATE–SOURCE VOLTAGE (VOLTS)

Figure 6. Gate V oltage versus Drain Current

MRF140MOTOROLA RF DEVICE DATA

3

50

30

7.0

150

Z

in

150

30

7.0

f = 2.0 MHz

ZOL*

Zo = 10 Ohms

VDD = 28 V
IDQ = 250 mA
P

= 150 W PEP

out

BIAS

0–12 V

RF INPUT

R1

C4

C1

C2 C3

f = 2.0 MHz

NOTE: Gate Shunted by 25 Ohms.

ZOL* = Conjugate of the optimum load impedance

ZOL* = into which the device output operates at a
ZOL* = given output power, voltage and frequency.

Figure 7. Series Equivalent Impedance

+

C5

RFC1

L1

R2

DUT

D1

L4

C6

L3

C10

RFC1

L2

C7

+ 28 V

+

C11

–

C9

C8

RF
OUTPUT

MRF140
4

C1, C2, C8 — Arco 463 or equivalent
C3 — 25 pF, Unelco
C4 — 0.1 µF, Ceramic
C5 — 1.0 µF, 15 WV Tantalum
C6 — 15 pF, Unelco J101
C7 — 25 pF, Unelco J101
C9 — Arco 262 or equivalent
C10 — 0.05 µF, Ceramic
C11 — 15 µF, 35 WV Electrolytic

Figure 8. 150 MHz Test Circuit (Class AB)

L1 — 3/4″, #18 AWG into Hairpin
L2 — Printed Line, 0.200″ x 0.500″
L3 — 7/8″, #16 AWG into Hairpin
L4 — 2 Turns, #16 AWG, 5/16 ID
RFC1 — 5.6 µH, Molded Choke
RFC2 — VK200–4B
R1, R2 — 150 Ω, 1.0 W Carbon

MOTOROLA RF DEVICE DATA

RF POWER MOSFET CONSIDERA TIONS

MOSFET CAPACITANCES

The physical structure of a MOSFET results in capacitors
between the terminals. The metal oxide gate structure
determines the capacitors from gate–to–drain (Cgd), and
gate–to–source (Cgs). The PN junction formed during the
fabrication of the RF MOSFET results in a junction capaci­tance from drain–to–source (Cds).

These capacitances are characterized as input (C
output (C

) and reverse transfer (C

oss

) capacitances on data

rss

iss

sheets. The relationships between the inter–terminal capaci­tances and those given on data sheets are shown below. The
C

can be specified in two ways:

iss

1. Drain shorted to source and positive voltage at the gate.

2. Positive voltage of the drain in respect to source and zero
volts at the gate. In the latter case the numbers are lower.
However, neither method represents the actual operat­ing conditions in RF applications.

DRAIN

C

ds

SOURCE

C

= Cgd + C

iss

C

oss

C

= C

rss

= Cgd + C

gd

gs

ds

GATE

C

gd

C

gs

LINEARITY AND GAIN CHARACTERISTICS

In addition to the typical IMD and power gain data
presented, Figure 5 may give the designer additional informa­tion on the capabilities of this device. The graph represents the
small signal unity current gain frequency at a given drain
current level. This is equivalent to fT for bipolar transistors.

Since this test is performed at a fast sweep speed, heating of
the device does not occur. Thus, in normal use, the higher
temperatures may degrade these characteristics to some
extent.

DRAIN CHARACTERISTICS

),

One figure of merit for a FET is its static resistance in the

full–on condition. This on–resistance, V

DS(on)

, occurs in the
linear region of the output characteristic and is specified under
specific test conditions for gate–source voltage and drain
current. For MOSFETs, V

has a positive temperature

DS(on)

coefficient and constitutes an important design consideration
at high temperatures, because it contributes to the power
dissipation within the device.

GATE CHARACTERISTICS

The gate of the RF MOSFET is a polysilicon material, and
is electrically isolated from the source by a layer of oxide. The
input resistance is very high — on the order of 109 ohms —
resulting in a leakage current of a few nanoamperes.

Gate control is achieved by applying a positive voltage
slightly in excess of the gate–to–source threshold voltage,
V

GS(th)

.

Gate Voltage Rating — Never exceed the gate voltage
rating. Exceeding the rated VGS can result in permanent
damage to the oxide layer in the gate region.

Gate Termination — The gates of these devices are
essentially capacitors. Circuits that leave the gate open–cir­cuited or floating should be avoided. These conditions can
result in turn–on of the devices due to voltage build–up on the
input capacitor due to leakage currents or pickup.

Gate Protection — These devices do not have an internal
monolithic zener diode from gate–to–source. If gate protection
is required, an external zener diode is recommended.

EQUIVALENT TRANSISTOR PARAMETER TERMINOLOGY

Collector Drain. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

Emitter Source. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

Base Gate. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

R

CE(sat)

V

=

(BR)CES

V

CBO

I

CES

I

EBO

V

BE(on)

V

CE(sat)

C

C

h

V

CE(sat)

I

C

. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

I

. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

C

. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

ib

. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

ob

. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

fe

. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

V

(BR)DSS

V

DGO

I

D

I

DSS

I

GSS

V

GS(th)

V

DS(on)

C

iss

C

oss

g

fs

r

DS(on)

V

=

DS(on)

I

D

MRF140MOTOROLA RF DEVICE DATA

5

P ACKAGE DIMENSIONS

A
U

M

Q

1

4

32

M

R

B

D

K

J

H

C

E

SEATING
PLANE

NOTES:

1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.

2. CONTROLLING DIMENSION: INCH.

DIM MIN MAX MIN MAX

A 0.960 0.990 24.39 25.14
B 0.465 0.510 11.82 12.95
C 0.229 0.275 5.82 6.98
D 0.216 0.235 5.49 5.96
E 0.084 0.110 2.14 2.79
H 0.144 0.178 3.66 4.52
J 0.003 0.007 0.08 0.17
K 0.435 ––– 11.05 –––
M 45 NOM 45 NOM

__

Q 0.115 0.130 2.93 3.30
R 0.246 0.255 6.25 6.47
U 0.720 0.730 18.29 18.54

STYLE 2:

PIN 1. SOURCE

2. GATE

3. SOURCE

4. DRAIN

MILLIMETERSINCHES

CASE 211–11

ISSUE N

Motorola reserves the right to make changes without further notice to any products herein. Motorola makes no warranty , representation or guarantee regarding
the suitability of its products for any particular purpose, nor does Motorola assume any liability arising out of the application or use of any product or circuit, and
specifically disclaims any and all liability, including without limitation consequential or incidental damages. “T ypical” parameters which may be provided in Motorola
data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals”
must be validated for each customer application by customer’s technical experts. Motorola does not convey any license under its patent rights nor the rights of
others. Motorola products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other
applications intended to support or sustain life, or for any other application in which the failure of the Motorola product could create a situation where personal injury
or death may occur. Should Buyer purchase or use Motorola products for any such unintended or unauthorized application, Buyer shall indemnify and hold Motorola
and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees
arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that
Motorola was negligent regarding the design or manufacture of the part. Motorola and are registered trademarks of Motorola, Inc. Motorola, Inc. is an Equal
Opportunity/Affirmative Action Employer.

How to reach us:
USA/EUROPE/Locations Not Listed: Motorola Literature Distribution; JAPAN: Nippon Motorola Ltd.: SPD, Strategic Planning Office, 4–32–1,

P.O. Box 5405, Denver, Colorado 80217. 303–675–2140 or 1–800–441–2447 Nishi–Gotanda, Shinagawa–ku, Tokyo 141, Japan. 81–3–5487–8488

Mfax: [e-mail] – TOUCHTONE 602–244–6609 ASIA/PACIFIC: Motorola Semiconductors H.K. Ltd.; 8B Tai Ping Industrial Park,
INTERNET: http://motorola.com/sps

MRF140

– US & Canada ONLY 1–800–774–1848 51 Ting Kok Road, T ai Po, N.T., Hong Kong. 852–26629298

◊

Mfax is a trademark of Motorola, Inc.

MOTOROLA RF DEVICE DATA

MRF140/D

6