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¡
The MR27V802D is a 8Mbit electrically Programmable Read-Only Memory whose configuration can
be electrically switched between 524,288 word x 16bit and 1,048,576 word x 8bit. The MR27V802D
operates on a single +3V-3.3V power supply and is TTL compatible. Since the MR27V802D
operates asynchronously , external clocks are not required , making this device easy-to-use. The
MR27V802D is suitable as large-capacity fixed memory for microcomputers and data terminals. It is
manufactured using a CMOS double silicon gate technology and is offered in 42-pin DIP, 44-pin
SOP or 44-pin TSOP packages.
1A
MR27V802D
524,288-Word x 16-Bit or 1,048,576-Word x 8-Bit One Time PROM
DESCRIPTION
FEATURES
• 524,288 word x 16bit / 1,048,576 word x 8bit electrically switchable configuration
• Single +3V-3.3V power supply
• Access time 100ns access time (Vcc=+3V)
80ns access time (Vcc=+3.3V)
• Input / Output TTL compatible
• Three-state output
• Packages
42-pin plastic DIP (DIP42-P-600-2.54) (Product name : MR27V802DRA)
44-pin plastic SOP (SOP44-P-600-1.27-K) (Product name : MR27V802DMA)
44-pin plastic TSOP (TSOP II 44-P-400-0.80-K) (Product name : MR27V802DTP)
Semiconductor
November 1999
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PIN NAMES
FUNCTIONS
D15/A-1 Data output / Address input
A0-A18 Address input
D0-D14 Data output
CE
OE
Output enable
V
CC
Power supply voltage
BYTE/V
PP
Mode switch / Program power supply voltage
NC
Non connection
PIN CONFIGURATION (TOP VIEW)
Chip enable
V
SS
GND
MR27V802D
D15/A-1
BYTE/Vpp
A18
A8
A9
A11
A12
A13
A14
A15
A16
V
SS
D15/A-1
D7
D14
D6
D13
D5
D12
D4
V
CC
A10
42
41
40
2
3
4
5
39
38
37
36
6
7
8
9
35
34
33
32
10
11
12
13
31
30
29
28
14
15
16
17
27
26
25
24
18
19
20
21
23
22
NC
A17
A7
A6
A5
A4
A3
A2
A1
A0
CE
V
SS
OE
D0
D8
D1
D9
D2
D10
D3
D11
1
BYTE/Vpp
44-pin TSOP (II)44-pin SOP
42-pin DIP
43
A18
A8
A9
A11
A12
A13
A14
A15
A16
V
SS
D7
D14
D6
D13
D5
D12
D4
V
CC
A10
42
41
40
2
3
4
5
39
38
37
36
6
7
8
9
35
34
33
32
10
11
12
13
31
30
29
28
14
15
16
17
27
26
25
24
18
19
20
21
2322
NC
A17
A7
A6
A5
A4
A3
A2
A1
A0
CE
V
SS
OE
D0
D8
D1
D9
D2
D10
D3
D11
44
NC
1
NC
43
A18
A8
A9
A11
A12
A13
A14
A15
A16
V
SS
D7
D14
D6
D13
D5
D12
D4
V
CC
A10
42
41
40
2
3
4
5
39
38
37
36
6
7
8
9
35
34
33
32
10
11
12
13
31
30
29
28
14
15
16
17
27
26
25
24
18
19
20
21
2322
NC
A17
A7
A6
A5
A4
A3
A2
A1
A0
CE
V
SS
OE
D0
D8
D1
D9
D2
D10
D3
D11
44
NC
1
NC
D15/A-1
BYTE/Vpp
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A0
A1
A2
A3
A4
A5
A6
A7
A8
A9
A10
A11
A12
A13
A14
A15
A16
A17
A18
BLOCK DIAGRAM
D0
CE BYTE/V
PP
OE
CE PGMOE
Address Buffer
Row Decoder
Column Decoder
Memory Matrix
Multiplexer
Output Buffer
FUNCTION TABLE
STAND-BY
OUTPUT DISABLE
READ (8-Bit)
READ (16-Bit)
MODE
D15/A-1
CE OE
V
CC
LL
D
OUT
L
L
L/H
L
H
L
*
H
*
H
L
*: Don't Care
D1D2D3D4D5D6D7D8D9
D10
D11
D12
D13
D14
D15
X8/X16 Switch
A-1
In 8-bit output mode, these pins are
three-stated and pin D15 functions
as the A-1 address pin.
3.0V
to
3.3V
D8 - D14D0 - D7
H
L
D
OUT
Hi-Z
H
Hi-Z
*
Hi-Z
PROGRAM
LH
D
IN
PROGRAM INHIBIT
H H Hi-Z
PROGRAM VERIFY
HL
D
OUT
9.75V
4.0V
MR27V802D
BYTE/V
PP
524,288X16-Bit or 1,048,576X8-Bit
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Operating temperature under bias
Storage temperature
Input voltage
Output voltage
Power supply voltage
Program power supply voltage
Power dissipation per package
Parameter
Symbol
Topr
UnitValueCondition
RECOMMENDED OPERATING CONDITIONS
VCC power supply voltage
VPP power supply voltage
Input "H" level
Input "L" level
Parameter Symbol
V
CC
Unit
3.6
Typ.
2.7
Condition
T
stg
V
I
V
O
V
CC
V
PP
P
D
0 to 70
-55 to 125
V-0.5 to V
CC
+ 0.5
V-0.5 to VCC +0.5
V-0.5 to 5
V-0.5 to 11.5
W1.0
-
relative to V
SS
(Ta=0 to 70°C)
Min. Max.
V
V
CC
+0.5
-0.5
-
V
V
CC
+0.5*2.2
-
V
0.6-0.5**
-
V
V
PP
V
IH
V
IL
VCC=2.7V-3.6V
Voltage is relative to Vss
ABSOLUTE MAXIMUM RATINGS
-
-
MR27V802D
°C
°C
* : Vcc+1.5V (Max.) when pulse width of overshoot is less than 10nS.
** : -1.5V (Min.) when pulse width of undershoot is less than 10nS.
Page 5
CE=V
IL,
OE=V
IH
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ELECTRICAL CHARACTERISTICS (Read operation)
DC Characteristics 1
(V
CC
=3.3V±0.3V, Ta=0 to 70°C)
DC Characteristics 2
Input leakage current
Output leakage current
V
CC
power supply current
(Standby)
V
CC
power supply current (Read)
V
PP
power supply current
Parameter
Symbol
UnitCondition
(V
CC
=3V±0.3V, Ta=0 to 70°C)
Input "H" level
Input "L" level
Output "H" level
Output "L" level
Voltage is relative to Vss
Input leakage current
Output leakage current
V
CC
power supply current
(Standby)
V
CC
power supply current (Read)
V
PP
power supply current
Parameter
Symbol
Unit
Condition
Input "H" level
Input "L" level
Output "H" level
Output "L" level
Voltage is relative to Vss
I
LI
10
Typ.
-
Min. Max.
I
LO
I
CCSC
I
CCST
I
CCA
µA
10
-
µA
50
-
µA
-
CE=V
CC
1
-
CE=V
IH
35
-
mA
tc=100ns
-
-
I
PP
V
IH
V
IL
V
OH
V
OL
10
-
µA
V
PP=VCC
VCC+0.5*
2.2
V
-
0.6-0.5**
V
-
-
2.4
V
I
OH
=-400uA
0.4
-
V
I
OL
=2.1mA
-
-
-
-
-
CE=V
IL,
OE=V
IH
I
LI
10
Typ.
-
Min. Max.
I
LO
I
CCSC
I
CCST
I
CCA
µA
10-
µA
50
-
µA
-
CE=V
CC
1
-
CE=V
IH
40
-
mA
tc=80ns
-
-
I
PP
V
IH
V
IL
V
OH
V
OL
10
-
µA
V
PP=VCC
VCC+0.5*
2.2 V
-
0.6
-0.5**
V
-
-
V
I
OH
=-400uA
-
V
I
OL
=2.1mA
-
-
-
-
-
2.4
0.4
VI=0 to Vcc
VO=0 to Vcc
V
I
=0 to Vcc
V
O
=0 to Vcc
MR27V802D
mA
mA
* : Vcc+1.5V (Max.) when pulse width of overshoot is less than 10nS.
** : -1.5V (Min.) when pulse width of undershoot is less than 10nS.
* : Vcc+1.5V (Max.) when pulse width of overshoot is less than 10nS.
** : -1.5V (Min.) when pulse width of undershoot is less than 10nS.
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Output
MR27V802D
6/11
800ohms
100pF
2.08V
AC Characteristics 1
Address access time
CE access time
OE access time
Output disable time
Parameter
Symbol
T
ACC
Unit
-
Condition
(V
CC
=3V±0.3V, Ta=0 to 70°C)
Min. Max.
T
CE
ns
CE=OE=V
IL
-
ns
OE=V
IL
50
-
ns
CE=V
IL
300
ns
OE=V
IL
25
0
ns
-
0
ns
T
OE
T
OH
CE=V
IL
CE=OE=V
IL
Output hold time
0V/3V
0.8V/2.0V
100pF
0.8V/2.0V
Measurement conditions
Input signal level
Input timing reference level
Output load
Output timing reference level
100
100
T
CHZ
T
OHZ
Address cycle time
T
C
100
ns
--
AC Characteristics 2
Address access time
CE access time
OE access time
Output disable time
Parameter
Symbol
T
ACC
Unit
-
Condition
(V
CC
=3.3V±0.3V, Ta=0 to 70°C)
Min. Max.
T
CE
ns
CE=OE=V
IL
-
ns
OE=V
IL
40
-
ns
CE=V
IL
30
0
ns
OE=V
IL
250
ns
-
0
ns
T
OE
T
OH
CE=V
IL
CE=OE=V
IL
Output hold time
80
80
T
CHZ
T
OHZ
Address cycle time
T
C
80
ns
-
-
0V/3V
0.8V/2.0V
100pF
0.8V/2.0V
Measurement conditions
Input signal level
Input timing reference level
Output load
Output timing reference level
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A0 - A18
t
OH
t
CE
t
OE
t
ACC
CE
OE
Valid Data
Hi-ZHi-Z
D0 - D15
t
OH
t
CE
t
OE
t
ACC
CE
OE
Valid Data
Hi-ZHi-Z
D0 - D7
8-Bit Read Mode (BYTE=V
IL
)
D8 - D14
Hi-Z
TIMING CHART (READ CYCLE)
t
CHZ
t
OHZ
t
CHZ
t
OHZ
MR27V802D
t
C
t
C
A-1 - A18
16-Bit Read Mode (BYTE=VIH)
Page 8
FF00
00FF
8/11
ELECTRICAL CHARACTERISTICS (Programming operation)
DC Characteristics
Input leakage current
V
PP
power supply current (Program)
V
CC
power supply current
Parameter
Symbol
I
LI
Unit
10
Typ.
-
Condition
(Ta=25°C
±5°C)
Min. Max.
Input "L" level
I
PP2
I
CC
V
IH
V
IL
µA
-
V
I=VCC
+0.5V
50
-
mA
-
CE=V
IL
50
-
mA
-VCC+0.5
3.0
V
-
0.8
-0.5
V
-
-
9.75
-
Voltage is relative to Vss
Input "H" level
V
OH
-
2.4
VIOH=-400µA
-
Output "H" level
V
OL
0.45
-
V
I
OL
=2.1mA
-
Output "L" level
V
PP
10.09.5
V
-
Program voltage
V
CC
power supply voltage
V
CC
4.1
3.9
V
4.0
-
MR27V802D
Pin Check Function
Pin Check Function is to check contact between each device-pin and each socket-lead with EPROM
programmer.
Setting up address as the following condition call the preprogrammed codes on device outputs.
A0
(Vcc=3.3V
±0.3V,CE=OE=V
IL
,BYTE/Vpp=V
IH
,Ta=25°C±5°C)
A1
A2
A3
A4
A5
A6
A7
A8
A9
A10
A11
A12
A13
A14
A15
A16
A17
A18
0
1
0
1
0
1
0
1
0
VH*
0
10101001
101010101VH* 1
0
1010110
DATA
* :VH=8V
±0.25V
AC Characteristics
Address set-up time
OE set-up time
Data set-up time
Parameter
Symbol
T
AS
Unit
-
Typ.
100
Condition
Min. Max.
Data hold time
T
OES
T
DS
T
AH
T
DH
ns
-
-
2
µs
-
-
100
ns
--
-
2
µs
-
-
100 ns
-
-
-
Address hold time
T
OHZ
100
0
ns-
Output float delay from OE
T
VS
-
2
µs
-
V
PP
voltage set-up time
Program pulse width
T
PW
119
µs
10
-
Data valid from OE
T
OE
100
-
ns
--
-
-
-
-
(Vcc=4.0V
±0.1V,V
pp
=9.75V±0.25V,Ta=25°C±5°C)
ns
Address hold from OE high
T
AHO
-
0
--
FFFFOther conditions
Page 9
Consecutive Programming Waveforms
A0 - A18
D0 - D15
BYTE/V
PP
OE
CE
Din Din
High
t
AS
t
AH
t
PW
t
DS
t
DH
t
VS
9/11
MR27V802D
Consecutive Program Verify Waveforms
A0 - A18
D0 - D15
OE
CE
Dout
High
t
ACC
t
AHO
t
OE
t
OHZ
Dout
BYTE/V
PP
9.75V
Page 10
Program and Program Verify Cycle Waveforms
A0 - A18
D0 - D15
OE
CE
Din
t
AS
t
DH
Dout
BYTE/V
PP
9.75V
10/11
MR27V802D
PIN Capacitance
Input
BYTE/V
PP
Parameter
C
IN1
Unit
8 (10)
Typ.
-
(VCC=3.3V, Ta=25°C, f=1MHz)
Min. Max.
C
IN2
pF
-
V
I
=0V
120
--
Output
C
OUT
10 (12)
--
V
O
=0V
Symbol
Condition
t
PW
t
OES
t
OE
t
OHZ
t
DS
t
OHZ
t
AHO
( ) : DIP only
Page 11
Bad insertion
Increment Address
YES
Increment Address
Program 10µs
11/11
Programming / Verify Flow Chart
MR27V802D
VCC=4.0V
VPP=9.75V
X=0
YES
PASS
NO
NG
NO
NG
PASS
X=2?
X=X+1
YES
NO
VCC=3.0V
V
PP
=3.0V
Programming
Pin Check
NO
OK
V
CC
=3.6V
V
PP
=3.6V
NG
PASS
VCC=3.0V
V
PP
=3.0V
NG
PASS
Verify
NO
OK
Start
Start
Pin Check
Last Address ?
Address = First location
Program 10µs
Verify (One Byte)
Last Address ?
Verify (One Byte)
Device Passed Device Failed
Device Passed Device Failed
Verify (One Byte)
Verify (One Byte)
Bad insertion
Address = First location
Address = First location
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