524,288-Word x 16-Bit or 1,048,576-Word x 8-Bit One Time PROM
DESCRIPTION
The MR27V802D is a 8Mbit electrically Programmable Read-Only Memory whose configuration can
be electrically switched between 524,288 word x 16bit and 1,048,576 word x 8bit. The MR27V802D
operates on a single +3V-3.3V power supply and is TTL compatible. Since the MR27V802D
operates asynchronously , external clocks are not required , making this device easy-to-use. The
MR27V802D is suitable as large-capacity fixed memory for microcomputers and data terminals. It is
manufactured using a CMOS double silicon gate technology and is offered in 42-pin DIP, 44-pin
SOP or 44-pin TSOP packages.
FEATURES
• 524,288 word x 16bit / 1,048,576 word x 8bit electrically switchable configuration
• Single +3V-3.3V power supply
• Access time 100ns access time (Vcc=+3V)
80ns access time (Vcc=+3.3V)
• Input / Output TTL compatible
• Three-state output
• Packages
42-pin plastic DIP (DIP42-P-600-2.54) (Product name : MR27V802DRA)
44-pin plastic SOP (SOP44-P-600-1.27-K) (Product name : MR27V802DMA)
44-pin plastic TSOP (TSOP II 44-P-400-0.80-K) (Product name : MR27V802DTP)
1A
November 1999
1/11
Page 2
PIN CONFIGURATION (TOP VIEW)
MR27V802D
A18
A17
A7
A6
A5
A4
A3
A2
A1
A0
CE
V
SS
OE
D0
D8
D1
D9
D2
D10
D3
D11
10
11
12
13
14
15
16
17
18
19
20
21
NC
1
NC
1
2
3
4
5
6
7
8
9
42
A8
41
A9
40
A10
39
A11
38
A12
37
A13
36
A14
35
A15
34
A16
33
BYTE/Vpp
32
V
31
SS
D15/A-1
30
D7
29
D14
28
D6
27
D13
26
D5
25
D12
24
D4
23
V
22
CC
A18
A17
A7
A6
A5
A4
A3
A2
A1
A0
CE
V
SS
OE
D0
D8
D1
D9
D2
D10
D3
D11
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
17
18
19
20
21
NC
44
NC
43
A8
42
A9
41
A10
40
A11
39
A12
38
A13
37
A14
36
A15
35
A16
34
BYTE/Vpp
33
V
32
SS
D15/A-1
31
D7
30
D14
29
D6
28
D13
27
D5
26
D12
25
D4
24
V
2322
CC
NC
A18
A17
A7
A6
A5
A4
A3
A2
A1
A0
CE
V
SS
OE
D0
D8
D1
D9
D2
D10
D3
D11
10
11
12
13
14
15
16
17
18
19
20
21
NC
1
2
3
4
5
6
7
8
9
44
NC
43
A8
42
A9
41
A10
40
A11
39
A12
38
A13
37
A14
36
A15
35
A16
34
BYTE/Vpp
33
V
32
SS
D15/A-1
31
D7
30
D14
29
D6
28
D13
27
D5
26
D12
25
D4
24
V
2322
CC
42-pin DIP
PIN NAMES
FUNCTIONS
D15/A-1Data output / Address input
A0-A18Address input
D0-D14Data output
CE
OE
V
CC
V
SS
BYTE/V
NC
PP
Chip enable
Output enable
Power supply voltage
GND
Mode switch / Program power supply voltage
Non connection
Voltage is relative to Vss
* : Vcc+1.5V (Max.) when pulse width of overshoot is less than 10nS.
** : -1.5V (Min.) when pulse width of undershoot is less than 10nS.
Voltage is relative to Vss
* : Vcc+1.5V (Max.) when pulse width of overshoot is less than 10nS.
** : -1.5V (Min.) when pulse width of undershoot is less than 10nS.
=3.3V±0.3V, Ta=0 to 70°C)
(V
CC
Min.Max.
-
-
-
-
-
2.2V
-0.5**
2.4
Typ.
-
-
-
-
-
-
-
-
-
-
-
10
1050
1
40
10
VCC+0.5*
0.6
-
0.4
Unit
µA
µA
µA
mA
mA
µA
V
V
V
5/11
Page 6
AC Characteristics 1
Parameter
Address cycle time
Address access time
CE access time
OE access time
Input "H" level
Input "L" level
Output "H" level
Output "L" level
Program voltage
power supply voltage
V
CC
Voltage is relative to Vss
AC Characteristics
Parameter
Address set-up time
OE set-up time
Data set-up time
Address hold time
Data hold time
Output float delay from OE
voltage set-up time
V
PP
Program pulse width
Data valid from OE
Address hold from OE high
Symbol
I
LI
I
PP2
I
CC
V
IH
V
IL
V
OH
V
OL
V
PP
V
CC
Symbol
T
AS
T
OES
T
DS
T
AH
T
DH
T
OHZ
T
VS
T
PW
T
OE
T
AHO
Condition
V
I=VCC
CE=V
I
=2.1mA
OL
(Vcc=4.0V
Condition
+0.5V
IL
-
-
-
-
-
-
-
-
-
-
-
Min.Max.
-
-
-
3.0
-0.5
2.4
-
Typ.
-
-
--
-
-
-
-
9.75
3.9
±0.1V,V
pp
Min.Max.
100
2
100
2
100ns
4.0
=9.75V±0.25V,Ta=25°C±5°C)
Typ.
-
-
--
-
0
2
-
10
-
0
--
--
(Ta=25°C
10
50
50
VCC+0.5
0.8
-
0.45
10.09.5
4.1
-
-
-
-
-
100
-
119
100
-
±5°C)
Unit
µA
mA
mA
V
V
VIOH=-400µA
V
V
V
Unit
ns
µs
ns
µs
ns-
µs
µs
ns
ns
Pin Check Function
Pin Check Function is to check contact between each device-pin and each socket-lead with EPROM
programmer.
Setting up address as the following condition call the preprogrammed codes on device outputs.
(Vcc=3.3V
A0
A2
A1
0
1
A3
0
1
A4
0
A5
1
A6
A8
A7
0
0
1
101010101VH* 1
±0.3V,CE=OE=V
A10
0
A11
A9
VH*
A12
,BYTE/Vpp=V
IL
A14
A13
A15
,Ta=25°C±5°C)
IH
A17
A16
A18
10101001
0
1010110
DATA
FF00
00FF
FFFFOther conditions
* :VH=8V
±0.25V
8/11
Page 9
Consecutive Programming Waveforms
A0 - A18
MR27V802D
t
AS
t
PW
CE
High
OE
t
DS
D0 - D15
t
VS
BYTE/V
PP
Consecutive Program Verify Waveforms
DinDin
t
AH
t
DH
A0 - A18
CE
OE
D0 - D15
BYTE/V
PP
t
ACC
High
t
AHO
t
OE
Dout
t
OHZ
Dout
9.75V
9/11
Page 10
Program and Program Verify Cycle Waveforms
A0 - A18
MR27V802D
CE
OE
D0 - D15
BYTE/V
PP
t
OHZ
t
AS
t
PW
t
OES
t
DS
t
DH
Din
t
OE
Dout
t
AHO
t
OHZ
9.75V
PIN Capacitance
Parameter
Input
BYTE/V
PP
Output
( ) : DIP only
Symbol
C
IN1
C
IN2
C
OUT
Condition
=0V
V
I
=0V
V
O
(VCC=3.3V, Ta=25°C, f=1MHz)
Min.Max.
-
--
--
Typ.
-
8 (10)
120
10 (12)
Unit
pF
10/11
Page 11
Programming / Verify Flow Chart
MR27V802D
Programming
Bad insertion
Increment Address
Start
NO
Pin Check
OK
Address = First location
VCC=4.0V
VPP=9.75V
Program 10µs
NO
Last Address ?
YES
Verify
Start
Pin Check
OK
Address = First location
VCC=3.0V
V
=3.0V
PP
Verify (One Byte)
V
=3.6V
CC
V
=3.6V
PP
Verify (One Byte)
NO
Bad insertion
NG
PASS
NG
Increment Address
Address = First location
X=0
Verify (One Byte)
PASS
NO
Last Address ?
YES
VCC=3.0V
V
=3.0V
PP
Verify (One Byte)
PASS
PASS
Device PassedDevice Failed
NG
X=X+1
YES
X=2?
NO
Program 10µs
NG
Device PassedDevice Failed
11/11
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