Datasheet MR27V801D Datasheet (OKI)

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Semiconductor

MR27V801D

1,048,576-Word x 8-Bit One Time PROM

DESCRIPTION

The MR27V801D is a 8Mbit electrically Programmable Read-Only Memory organized as 1,048,576

word x 8bit. The MR27V801D operates on a single +3V-3.3V power supply and is TTL compatible.
Since the MR27V801D operates asynchronously , external clocks are not required , making this
device easy-to-use. The MR27V801D is suitable as large-capacity fixed memory for microcomputers
and data terminals. It is manufactured using a CMOS double silicon gate technology and is offered
in 32-pin DIP, 32-pin SOP or 32-pin TSOP packages.

FEATURES

• 1,048,576 word x 8bit

• Single +3V-3.3V power supply

• Access time 100ns access time (Vcc=+3V)
80ns access time (Vcc=+3.3V)

• Input / Output TTL compatible

• Three-state output

• Packages
32-pin plastic DIP (DIP32-P-600-2.54) (Product name : MR27V801DRA)
32-pin plastic SOP (SOP32-P-525-1.27-K) (Product name : MR27V801DMA)
32-pin plastic TSOP (TSOP I 32-P-814-0.50-K) (Product name : MR27V801DTA)

1A

November 1999

1/10

PIN CONFIGURATION (TOP VIEW)

MR27V801D

A19

1
2

A16

3

A15

4

A12

A7

5

A6

6

A5

7

A4

8

A3

9

A2

10

A1

11

A0

12

D0

13

D1

14

D2

15

V

16 17

SS

32-pin DIP

32
31
30
29
28
27
26
25
24
23
22
21
20
19
18

V

CC

A18
A17
A14
A13
A8
A9
A11
OE/Vpp
A10
CE
D7
D6
D5
D4
D3

A19

1
2

A16

3

A15

4

A12

A7

5

A6

6

A5

7

A4

8

A3

9

A2

10

A1

11

A0

12

D0

13

D1

14

D2

15

V

16 17

SS

32-pin SOP

32
31
30
29
28
27
26
25
24
23
22
21
20
19
18

V

CC

A18
A17
A14
A13
A8
A9
A11
OE/Vpp
A10
CE
D7
D6
D5
D4
D3

A19 A18

A16

A4

A5

A6

A7

A15

A12

32-pin TSOP

A3

A1

A2 D1

A0

D0

D2

V

PIN NAMES

A0 - A19 Address input

D0 - D7 Data output

CE

OE/V

PP

V

CC

V

SS

V

CC

A17

D3 D5 D7

D4 D6

SS

A13A8A9

A10

CE

FUNCTIONS

Chip enable
Output enable /

Program power supply voltage
Power supply voltage

GND

A11A14

12345678910111213141516

32313029282726252423222120191817

OE/Vpp

2/10

BLOCK DIAGRAM

MR27V801D

A0
A1
A2
A3
A4
A5
A6
A7
A8
A9
A10
A11
A12
A13
A14
A15
A16
A17
A18
A19

Address Buffer

CE OE/V

CE PGMOE

Row Decoder

Column Decoder

D0

PP

Memory Matrix

1,048,576X8-Bit

Multiplexer

Output Buffer

D1 D2 D3 D4 D5 D6 D7

FUNCTION TABLE

MODE
READ
OUTPUT DISABLE
STAND-BY
PROGRAM
PROGRAM INHIBIT
PROGRAM VERIFY

*: Don't Care

CE

L
L
H
L
H
L

OE/V

9.75V

V

PP

CC

L
H

3.0V to 3.3V

*

4.0V

L

D0 - D7

D

OUT

Hi-Z
Hi-Z

D

IN

Hi-Z

D

OUT

3/10

ABSOLUTE MAXIMUM RATINGS

MR27V801D

Parameter
Operating temperature under bias
Storage temperature

Input voltage
Output voltage
Power supply voltage

Program power supply voltage
Power dissipation per package

Symbol

Topr
T

stg

V

I

V

O

V

CC

V

PP

P

D

-

relative to V

-

SS

RECOMMENDED OPERATING CONDITIONS

Parameter Symbol
VCC power supply voltage
VPP power supply voltage
Input "H" level
Input "L" level

V

OE/V

V
V

CC

PP
IH
IL

Voltage is relative to Vss

* : Vcc+1.5V (Max.) when pulse width of overshoot is less than 10nS.
** : -1.5V (Min.) when pulse width of undershoot is less than 10nS.

Condition

VCC=2.7V - 3.6V

0 to 70

-55 to 125
+ 0.5

CC

(Ta=0 to 70°C)

Min. Max.

2.7

-0.5

Typ.

-

-

-

-

3.6

VCC+0.5

V

+0.5*2.2

CC

0.6-0.5**

UnitValueCondition

°C
°C

V-0.5 to V
V-0.5 to VCC + 0.5
V-0.5 to 5
V-0.5 to 11.5

W1.0

Unit

V
V
V
V

4/10

ELECTRICAL CHARACTERISTICS (Read operation)

DC Characteristics 1

Parameter

Input leakage current
Output leakage current
V

power supply current

CC

(Standby)

V

power supply current

CC

(Read)
V

power supply current

PP

Input "H" level
Input "L" level
Output "H" level
Output "L" level

Voltage is relative to Vss
* : Vcc+1.5V (Max.) when pulse width of overshoot is less than 10nS.
** : -1.5V (Min.) when pulse width of undershoot is less than 10nS.

Symbol

I

LI

I

LO

I

CCSC

I

CCST

I

CCA

I

PP

V

IH

V

IL

V

OH

V

OL

VI=0 to Vcc

VO=0 to Vcc

CE=V

IL,

tc=100ns

OE/V

I

OH

I

CE=V

CC

CE=V

IH

OE/VPP=V

PP=VCC

-

-

=-400µA

=2.1mA

OL

IH

MR27V801D

(V

=3V±0.3V, Ta=0 to 70°C)

CC

Min. Max.

2.2

2.4

Typ.

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

10
10
50

1

25
10

VCC+0.5*

0.6-0.5**

-

0.4

UnitCondition

µA
µA
µA

mA

mA

µA

V
V
V
V

DC Characteristics 2

Parameter

Input leakage current
Output leakage current

power supply current

V

CC

(Standby)

power supply current

V

CC

(Read)
V

power supply current

PP

Input "H" level
Input "L" level
Output "H" level
Output "L" level

Symbol

I

LI

I

LO

I

CCSC

I

CCST

I

CCA

I

PP

V

IH

V

IL

V

OH

V

OL

V

CE=V

IL,

tc=80ns

OE/V

VI=0 to Vcc

=0 to Vcc

O

CE=V

CC

CE=V

IH

OE/VPP=V

PP=VCC

-

-

I

=-400µA

OH

I

=2.1mA

OL

IH

Voltage is relative to Vss
* : Vcc+1.5V (Max.) when pulse width of overshoot is less than 10nS.

** : -1.5V (Min.) when pulse width of undershoot is less than 10nS.

=3.3V±0.3V, Ta=0 to 70°C)

(V

CC

Min. Max.

2.2

2.4

Typ.

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

10
10
50

1

30
10

VCC+0.5*

0.6-0.5**

-

0.4

UnitCondition

µA
µA
µA

mA

mA

µA

V
V
V
V

5/10

AC Characteristics 1

Parameter
Address cycle time
Address access time
CE access time
OE access time

Output disable time
Output hold time

Symbol

T

C

T

ACC

T

CE

T

OE

T

CHZ

T

OHZ

T

OH

Condition

-

CE=OE/V

OE/V

OE/V

PP=VIL

CE=V

PP=VIL

CE=V

PP=VIL

IL

IL

CE=OE/VPP=V

MR27V801D

(V

=3V±0.3V, Ta=0 to 70°C)

CC

Min. Max.

100

-

-

-

­100
100

50
300

0

IL

0

25

-

Unit

ns
ns
ns
ns
ns
ns
ns

Measurement conditions
Input signal level
Input timing reference level
Output load
Output timing reference level

AC Characteristics 2

Parameter
Address cycle time
Address access time
CE access time
OE access time

Output disable time
Output hold time

Symbol

T

C

T

ACC

T

CE

T

OE

T

CHZ

T

OHZ

T

OH

Measurement conditions
Input signal level
Input timing reference level
Output load
Output timing reference level

0V/3V

0.8V/2.0V
100pF

0.8V/2.0V

Condition

-

CE=OE/V

OE/V

OE/V

PP=VIL

CE=V

PP=VIL

CE=V

PP=VIL

IL

IL

CE=OE/VPP=V

0V/3V

0.8V/2.0V
100pF

0.8V/2.0V

(V

=3.3V±0.3V, Ta=0 to 70°C)

CC

Min. Max.

80

-

-

-

­80
80

40
300

0

IL

0

25

-

Unit

ns
ns
ns
ns
ns
ns
ns

Output

2.08V

800ohms

100pF

6/10

TIMING CHART (READ CYCLE)

A0 - A19

CE

OE/V

PP

MR27V801D

t

C

t

t

CE

t

OE

OH

t

CHZ

D0 - D7

PIN Capacitance

Parameter
Input
OE/V

PP

Output

( ) : DIP only

Symbol

C

IN1

C

IN2

C

OUT

t

ACC

Condition

V

=0V

I

=0V

V

O

t

OHZ

Valid Data

Hi-ZHi-Z

(VCC=3.3V, Ta=25°C, f=1MHz)

60

Unit

pF

Min. Max.

-

Typ.

-

8 (10)

--

--

10 (12)

7/10

ELECTRICAL CHARACTERISTICS (Programming operation)

DC Characteristics

MR27V801D

Parameter
Input leakage current
V

power supply current (Program)

PP

power supply current

V

CC

Input "H" level
Input "L" level
Output "H" level
Output "L" level
Program voltage

power supply voltage

V

CC

Voltage is relative to Vss

AC Characteristics

Parameter
Address set-up time
Data set-up time

Address hold time
Data hold time
Output float delay from CE

voltage set-up time

V

PP

Program pulse width
Data valid from CE
Address hold from CE high
VPP voltage recovery time

Symbol

I

LI

I

PP2

I

CC

V

IH

V

IL

V

OH

V

OL

V

PP

V

CC

Symbol

T

AS

T

DS

T

AH

T

DH

T

CHZ

T

VS

T

PW

T

CE

T

AHC

T

VR

Condition

V

I=VCC

CE=V

I

=2.1mA

OL

(Vcc=4.0V

Condition

+0.5V

IL

-

-

-

-

-

-

-

-

-

-

Min. Max.

-

-

-

3.0

-0.5

2.4

-

Typ.

-

-

--

-

-

-

-

9.75

3.9

±0.1V,V

pp

Min. Max.

100
100

2

100 ns

4.0

=9.75V±0.25V,Ta=25°C±5°C)

Typ.

-

--

-

­0
2

-

10

­0
2

--

--

--

(Ta=25°C

10
50
50

VCC+0.5

0.8

-

0.45

10.09.5

4.1

-

-

-

-

100

-

119

100

-

-

±5°C)

Unit

µA
mA
mA

V
V

VIOH=-400µA
V
V
V

Unit

ns
ns
µs

ns-

µs
µs

ns
ns
µs

Pin Check Function

Pin Check Function is to check contact between each device-pin and each socket-lead with EPROM
programmer.
Setting up address as the following condition call the preprogrammed codes on device outputs.

A1

A2

A3

A4

0

1

1

0

A0

0
10101

A5

A6

A7

1

0

1

0

101VH* 0

Other conditions

A8

(Vcc=3.3V

A9

A10

0

VH*

1

A11

±0.3V,CE=V

A12

A13

A14

,OE/Vpp=V

IL

A15

A16

,Ta=25°C±5°C)

IL

A17

A18

10101010

0

1010101

* :VH=8V

A19

1
0

DATA

AA

55

FF

±0.25V

8/10

Consecutive Programming Waveforms

A0 - A19

MR27V801D

t

AS

t

PW

CE

t

OE/V

PP

D0 - D7

VS

t

DS

9.75V

Din Din

Consecutive Program Verify Waveforms

t

t

AH

DH

A0 - A19

CE

OE/V

PP

D0 - D7

t

AS

t

VR

t

CE

Dout

t

AHC

t

CHZ

Dout

9/10

Programming / Verify Flow Chart

MR27V801D

Programming

Bad insertion

Start

NO

Pin Check

OK

Address = First location

VCC=4.0V

VPP=9.75V

Program 10µs

NO

Last Address ?Increment Address

YES

Address = First location

Verify

Start

Pin Check

OK

Address = First location

VCC=3.0V

Verify (One Byte)

VCC=3.6V

Verify (One Byte)

Device Passed Device Failed

NO

Bad insertion

NG

PASS

NG

PASS

Increment Address

Verify (One Byte)

NO

Last Address ?

VCC=3.0V

Verify (One Byte)

Device Passed

NG

PASS

YES

NG

PASS

Device Failed

10/10