Page 1
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Semiconductor
MR27V452D
262,144-Word x 16-Bit or 524,288-Word x 8-Bit
8-Word x 16-Bit or 16-Word x 8-Bit Page Mode One Time PROM
DESCRIPTION
The MR27V452D is a 4Mbit electrically Programmable Read-Only Memory with page mode. Its
configuration can be electrically switched between 262,144 word x 16bit and 524,288 word x 8bit.
The MR27V452D operates on a single +3.3V power supply and is TTL compatible. The MR27V452D
provides Page mode which can greatly reduce the read access time. Since the MR27V452D
operates asynchronously , external clocks are not required , making this device easy-to-use. The
MR27V452D is suitable as large-capacity fixed memory for microcomputers and data terminals. It is
manufactured using a CMOS double silicon gate technology and is offered in 40-pin DIP , 40-pin
SOP or 44-pin TSOP packages.
FEATURES
• 262,144 word x 16bit / 524,288 word x 8bit electrically switchable configuration
• Single +3.3V power supply
• Access time 100ns
Page mode access time 30ns
• Input / Output TTL compatible
• Three-state output
• Packages
40-pin plastic DIP (DIP40-P-600-2.54) (Product name : MR27V452DRP)
40-pin plastic SOP (SOP40-P-525-1.27-K) (Product name : MR27V452DMP)
44-pin plastic TSOP (TSOP II 44-P-400-0.80-K) (Product name : MR27V452DTP)
1A
November 1999
1/10
Page 2
PIN CONFIGURATION (TOP VIEW)
MR27V452D
A17
A7
A6
A5
A4
A3
A2
A1
A0
CE
V
SS
OE
D0
D8
D1
D9
D2
D10
D3
D11
10
11
12
13
14
15
16
17
18
19
20
NC
1
NC
2
1
2
3
4
5
6
7
8
9
A8
40
A9
39
A10
38
A11
37
A12
36
A13
35
A14
34
A15
33
A16
32
31
BYTE/Vpp
V
30
D15/A-1
29
D7
28
D14
27
D6
26
D13
25
D5
24
D12
23
D4
22
V
21
SS
CC
A17
A7
A6
A5
A4
A3
A2
A1
A0
CE
V
SS
OE
D0
D8
D1
D9
D2
D10
D3
D11
3
4
5
6
7
8
9
10
11
12
13
14
15
16
17
18
19
20
21
NC
44
NC
43
A8
42
A9
41
A10
40
A11
39
A12
38
A13
37
A14
36
A15
35
A16
34
33
BYTE/Vpp
V
32
D15/A-1
31
D7
30
D14
29
D6
28
D13
27
D5
26
D12
25
D4
24
V
2322
SS
CC
40-pin DIP , SOP
PIN NAMES
FUNCTIONS
D15/A-1 Data output / Address input
A0 - A17 Address input
D0 - D14 Data output
CE
OE
V
CC
V
SS
BYTE/V
NC
PP
Chip enable
Output enable
Power supply voltage
GND
Mode switch / Program power supply voltage
Non connection
44-pin TSOP (II)
2/10
Page 3
BLOCK DIAGRAM
MR27V452D
A-1
X8/X16 Switch
A0
A1
A2
A3
A4
A5
A6
A7
A8
A9
A10
A11
A12
A13
A14
A15
A16
A17
Address Buffer
CE BYTE/V
OE
CE PGMOE
Memory Matrix
Row Decoder
262,144X16-Bit or 524,288X8-Bit
Multiplexer & Page Data Latch
Output Buffer
Column Decoder
D0
D1D2D3D4D5D6D7D8D9
PP
D10
D11
D12
D13
D14
D15
FUNCTION TABLE
MODE
READ (16-Bit)
READ (8-Bit)
OUTPUT DISABLE
STAND-BY
PROGRAM
PROGRAM INHIBIT
PROGRAM VERIFY
* : Don't Care
In 8-bit output mode, these pins are
three-stated and pin D15 functions
as the A-1 address pin.
PP
V
CC
3.3V
4.0V
D
OUT
D8 - D14D0 - D7
D
Hi-Z
Hi-Z
Hi-Z
D
D
L
H
*
BYTE/V
H
L
H
L
H
L
CE OE
LL
L
L
H
LH
H H Hi-Z
9.75V
HL
D15/A-1
OUT
L/H
*
*
IN
OUT
3/10
Page 4
ABSOLUTE MAXIMUM RATINGS
MR27V452D
Parameter
Operating temperature under bias
Storage temperature
Input voltage
Output voltage
Power supply voltage
Program power supply voltage
Power dissipation per package
Symbol
Topr
T
stg
V
I
V
O
V
CC
V
PP
P
D
-
relative to V
-
SS
RECOMMENDED OPERATING CONDITIONS FOR READ
Parameter Symbol
VCC power supply voltage
VPP power supply voltage
Input "H" level
Input "L" level
V
CC
V
PP
V
IH
V
IL
Voltage is relative to Vss
* : Vcc+1.5V (Max.) when pulse width of overshoot is less than 10nS.
** : -1.5V (Min.) when pulse width of undershoot is less than 10nS.
Condition
VCC=3.0V-3.6V
0 to 70
-55 to 125
+ 0.5
CC
(Ta=0 to 70°C)
Min. Max.
3.0
-0.5
Typ.
-
-
-
-
3.6
+0.5
V
CC
+0.5*2.2
V
CC
0.6-0.5**
UnitValueCondition
°C
°C
V-0.5 to V
V-0.5 to VCC + 0.5
V-0.5 to 5
V-0.5 to 11.5
W1.0
Unit
V
V
V
V
4/10
Page 5
ELECTRICAL CHARACTERISTICS (Read operation)
DC Characteristics
Parameter
Input leakage current
Output leakage current
V
power supply current
CC
(Standby)
V
power supply current
CC
(Read)
V
power supply current
PP
Input "H" level
Input "L" level
Output "H" level
Output "L" level
Voltage is relative to Vss
* : Vcc+1.5V (Max.) when pulse width of overshoot is less than 10nS.
** : -1.5V (Min.) when pulse width of undershoot is less than 10nS.
Symbol
I
LI
I
LO
I
CS1
I
CS2
I
CCA
I
PP
V
IH
V
IL
V
OH
V
OL
VI=0 to Vcc
VO=0 to Vcc
CE=V
IL ,
tc=100ns
I
CE=V
CE=V
OE=V
V
PP=VCC
=-400µA
OH
=2.1mA
OL
CC
IH
IH
-
-
MR27V452D
=3.3V±0.3V, Ta=0 to 70°C)
(V
CC
Min. Max.
2.2
-0.5** V
Typ.
-
-
-
-
-mA
-
-
-
-
-
-
-
-
-
10
10
50
70
10
VCC+0.5*
0.6
-
-
0.4
UnitCondition
µA
µA
µA
1
mA
µA
V
-2.4
V
VI
AC Characteristics
Parameter
Address access cycle time
Address access time
Page access cycle time
Page access time
CE access time
OE access time
Output disable time
Output hold time
Symbol
T
C
T
ACC
T
PC
T
PAC
T
CE
T
OE
T
CHZ
T
OHZ
T
OH
Measurement conditions
Input signal level
Input timing reference level
Output load
Output timing reference level
-
CE=OE=V
-
-
OE=V
IL
CE=V
IL
OE=V
IL
CE=V
IL
CE=OE=V
0V/3V
0.8V/2.0V
50pF
0.8V/2.0V
2.08V
=3.3V±0.3V, Ta=0 to 70°C)
(V
CC
Min. Max.
100
IL
-
30
-
-
-
0
0
IL
0
-
100
-
30
100
50
30
25
-
UnitCondition
ns
ns
ns
ns
ns
ns
ns
ns
ns
Output
800ohms
50pF
5/10
Page 6
TIMING CHART
NORMAL MODE READ CYCLE
ADDRESS
CE
OE
MR27V452D
t
C
t
t
CE
t
OE
OH
t
CHZ
DOUT
PAGE MODE READ CYCLE
A3 - A17
A0 - A2 (Word mode)
A-1 - A2 (Byte mode)
CE
t
CE
t
ACC
t
OHZ
Valid Data
Hi-ZHi-Z
t
C
t
PC
t
OE
t
PC
t
OH
t
CHZ
OE
DOUT
Hi-Z
t
ACC
t
PAC
t
PAC
t
OHZ
6/10
Hi-Z
Page 7
ELECTRICAL CHARACTERISTICS (Programming operation)
DC Characteristics
Parameter
Input leakage current
V
power supply current (Program)
PP
power supply current
V
CC
Input "H" level
Input "L" level
Output "H" level
Output "L" level
Program voltage
V
power supply voltage
CC
Voltage is relative to Vss
AC Characteristics
Parameter
Address set-up time
OE set-up time
Data set-up time
Address hold time
Data hold time
Output float delay from OE
voltage set-up time
V
PP
Program pulse width
Data valid from OE
Symbol
I
LI
I
PP2
I
CC
V
IH
V
IL
V
OH
V
OL
V
PP
V
CC
Symbol
T
AS
T
OES
T
DS
T
AH
T
DH
T
OHZ
T
VS
T
PW
T
OE
T
AHO
Condition
V
I=VCC
CE=V
=2.1mA
I
OL
(Vcc=4.0V
Condition
+0.5V
IL
-
-
-
-
-
-
-
-
-
-
-
Min. Max.
-
-
-
3.0
-0.5
2.4
-
3.9
±0.1V,V
Min. Max.
100
2
100
2
100 ns
0
2
-
0
MR27V452D
(Ta=25°C±5°C)
Typ.
-
-
--
-
-
-
-
9.75
4.0
=9.75V±0.25V,Ta=25°C±5°C)
pp
10
50
80
VCC+0.5
0.8
-
0.45
10.09.5
4.1
Typ.
-
-
--
-
-
-
-
-
-
-
100
-
10
--
--
-
119
100
-
Unit
µA
mA
mA
V
V
VIOH=-400µA
V
V
V
Unit
ns
µs
ns
µs
ns-
µs
µs
ns
nsAddress hold from OE high
Pin Check Function
Pin Check Function is to check contact between each device-pin and each socket-lead with EPROM
programmer.
Setting up address as the following condition call the preprogrammed codes on device outputs.
±0.3V,CE=OE=V
A8 A9
A0
A1
A2 A3
A4
A5 A6
(Vcc=3.3V
A7
010101010VH* 0
1
1
0
0
0101 VH*
1
A10
1
A11 A12
,BYTE/Vpp=V
IL
A14 A15
A13
1
01010
IH
01010
,Ta=25°C±5°C)
A17
0
1
DATA
FF00
00FF
A16
1
FFFFOther conditions
* :VH=8V
±0.25V
7/10
Page 8
Consecutive Programming Waveforms
A0 - A17
MR27V452D
t
AS
t
PW
CE
High
OE
t
DS
D0 - D15
t
VS
BYTE/V
PP
Consecutive Program Verify Waveforms
Din Din
t
AH
t
DH
A0 - A17
CE
OE
D0 - D15
BYTE/V
PP
t
ACC
High
t
AHO
t
OE
Dout
t
OHZ
Dout
9.75V
8/10
Page 9
Program and Program Verify Cycle Waveforms
A0 - A17
MR27V452D
CE
OE
D0 - D15
BYTE/V
PP
t
OHZ
t
AS
t
PW
t
OES
t
DS
t
DH
t
OE
Din
Dout
t
AHO
t
OHZ
9.75V
PIN Capacitance
Parameter
Input
BYTE/V
PP
Output
( ) : DIP only
Symbol
C
IN1
C
IN2
C
OUT
Condition
V
=0V
I
V
=0V
O
(VCC=3.3V, Ta=25°C, f=1MHz)
Min. Max.
-
Typ.
-
8 (10)
--
--
10 (12)
Unit
60
9/10
pF
Page 10
Programming / Verify Flow Chart
MR27V452D
Programming
Bad insertion
Start
NO
Pin Check
Address = First location
VCC=4.0V
VPP=9.75V
Program 10µs
NO
Last Address ?Increment Address
YES
OK
Verify
Start
Pin Check
OK
Address = First location
VCC=3.0V
V
=3.0V
PP
Verify (One Byte)
V
=3.6V
CC
V
=3.6V
PP
Verify (One Byte)
NO
Bad insertion
NG
PASS
NG
Increment Address
Address = First location
X=0
Verify (One Byte)
PASS
NO
Last Address ?
YES
VCC=3.0V
V
=3.0V
PP
Verify (One Byte)
PASS
PASS
Device Passed Device Failed
NG
X=X+1
YES
X=2?
NO
Program 10µs
NG
Device Passed
Device Failed
10/10
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