Datasheet MR27V3266D Datasheet (OKI)

1 Semiconductor

MR27V3266D

2M x16 / 1M x32 Synchronous OTP ROM

DESCRIPTION

The MR27V3266D is a 32Mbit One Time Programmable Synchronous Read Only Memory whose configuration
can be electrically switched between 2,097,152 x16bit(word mode) and 1,048,576 x32bit(double word mode) by
the state of the /WORD pin. The MR27V3266D supports high speed synchronous read operations using a single

3.3V power supply.

FEATURES ON READ

- 3.3V power supply

- LVTTL compatible with multiplexed address

- Dual, electrically switchable configurations
2M x16(word mode) / 1M x32(double word mode)

- All inputs are sampled at the rising edge of the system clock

- High speed read operation

66MHz : CAS Latency=5

tRCDmin=2
Burst Length (4, 8)

Data scramble (sequential, interleave)

50MHz : CAS Latency=4, 5

tRCDmin=1
Burst Length (4, 8)

Data scramble (sequential, interleave)

- DQM for data out masking

- No Precharge operation is required. No Refresh operation is required.

- No power on sequence is required.

Mode register is automatically initialized to the default state after power on.
"Row Active" command to read data is applicable as the first command just after power on.

- Single Bank operation

- Package : TSOP II 86-P-400-0.50-K

FEATURES ON PROGRAMMING

- 9.75V programming Power supply

- Programming algorithm is compatible with conventional asynchronous 32M OTP.
MR27V3266D can be programmed with conventional EPROM programmers.

Synchronous Burst read or Static Programming Operation are selected by the state of STO pin.

High STO level enables full static programming. (Program, Program Verify, asynchronous Read)
Low STO level enables synchronous burst read.

Exclusive 86pin socket adapters are available from OKI to support programming requirements.

The socket adapter is used on a 48DIP socket on the programmer.
The socket adapter is designed with the STO pin connected to V
as conventional 32M OTP.

EPROM programmer must have the proper algorithm for 32M OTP.

*Device damage can occur if improper algorithm is used.

- High speed programming

10µs programming pulse per word allows high speed programming.

August , 1999
Revision 2.4

1

CC in order to program MR27V3266D

32M Synchronous OTP

1 Semiconductor

FUNCTION BLOCK DIAGRAM

A0

|

A12

Address Buffer

Latch

Row Address

Latch

Row Decoder

MR27V3266D

Memory Cell Array

1Mx32 or 2Mx16

Row Select

Column Select

Sence Amplifier
& Program Bias

CS

RAS

CAS

MR

WORD

Command

Controller

Mode

Register

CLK Buffer

CKE CLK

Column Address

Burst Sequence

Controller

Program Mode

Controller

OE

Column Decoder

STO DQ24-DQ31

CAP0-CAP7

Data Output

Latch

Data Outputs

Selector

Data Output/Input Buffer

& Data Output/Address Buffer

Data Input

Buffer

DQ0-DQ15

August , 1999
Revision 2.4

CE

AMPX

2

DQ16-DQ23

32M Synchronous OTP

1 Semiconductor

PIN CONFIGURATION

Programming in Static Operation (STO is high)

MR27V3266D

TOP VIEW

Synchronous Read (STO is VSS or open)

VCC

DQ0

VCCQ

DC

DQ1

VSSQ

DC

DQ2

VCCQ

DC

DQ3

VSSQ

DC
DC

VCC

DC

NC
/CAS
/RAS

DC

/WORD

A12
A11
A10

A0
A1
A2

NC

VCC

NC

DQ4

VSSQ

DC

DQ5

VCCQ

DC

DQ6

VSSQ

DC

DQ7

VCCQ

DC

VCC

VCC

DQ0
VCCQ
DQ16

DQ1

VSSQ

DQ17

DQ2
VCCQ
DQ18

DQ3

VSSQ

DQ19

/MR
VCC

DQM

NC
/CAS
/RAS

/CS

/WORD

A12
A11
A10

A0
A1
A2

NC

VCC

NC

DQ4

VSSQ

DQ20

DQ5
VCCQ
DQ21

DQ6

VSSQ

DQ22

DQ7
VCCQ
DQ23

VCC

1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
17
18
19
20
21
22
23
24
25
26
27
28
29
30
31
32
33
34
35
36
37
38
39
40
41
42
43

86PIN

TSOP II

86
85
84
83
82
81
80
79
78
77
76
75
74
73
72
71
70
69
68
67
66
65
64
63
62
61
60
59
58
57
56
55
54
53
52
51
50
49
48
47
46
45
44

VSS
DQ31
VSSQ
DQ15
DQ30
VCCQ
DQ14
DQ29
VSSQ
DQ13
DQ28
VCCQ
DQ12
NC
VSS
DC
DC
DC
CLK
CKE
A9
A8
A7
A6
A5
A4
A3
DC
VSS
DC
DQ27
VCCQ
DQ11
DQ26
VSSQ
DQ10
DQ25
VCCQ
DQ9
DQ24
VSSQ
DQ8
VSS

VSS
CAP0
VSSQ
DQ15
CAP1
VCCQ
DQ14
CAP2
VSSQ
DQ13
CAP3
VCCQ
DQ12
NC
VSS
VPP
/CE
/OE
DC
DC
A9
A8
A7
A6
A5
A4
A3
AMPX
VSS
STO
CAP4
VCCQ
DQ11
CAP5
VSSQ
DQ10
CAP6
VCCQ
DQ9
CAP7
VSSQ
DQ8
VSS

August , 1999
Revision 2.4

DC(Don't Care) : Logical input level is ignored, however the pin is connected to input buffer of OTP

32M Synchronous OTP

3

1 Semiconductor

f

MR27V3266D

PIN FUNCTION FOR SYNCHRONOUS READ OPERATION ( STO pin is low level or open )

PIN NAME

STO

CLK

/CS

CKE

A0-A12

/RAS

/CAS

/MR

FUNCTION

Static Operation

System Clock

Chip Select

Clock Enable

Address

Row Address Strobe

Column Address Strobe

Mode Register Set

DESCRIPTION

Must be low for synchronous operation. Internal resistance
(around 10k ohms) pulls the input level down to V
this pin is open. High level STO enables programming
operation compatible with standard OTPs.

All inputs are sampled at the rising edge.

Enables command sampling by the CLK signal with a low level
on the /CS input.

Masks internal system clock to freeze the CLK operation o
subsequent CLK cycle. CKE must be enabled for command
sampling cycles. CLK is disabled for two types of operations.

1)Clock Suspend

2)Power down.

Row and column addresses are multiplexed on the same pins.
Row address:RA0-RA12
Column address:CA0-CA6(x32) / CA0-CA7(x16)

Functionality depends on the combination.
See the function table.

SS when

DQ0-DQ31

DQM

/WORD

VCC

SS

V

CCQ

V

SSQ

V

NC

DC

Data Output

Data Output Masking

x32/x16 Organization
Selection

Power Supply

Ground

Data Output Power Supply

Data Output Ground

No Connection

Don't Care

Data outputs are valid at the rising edge of CLK for read
cycles. Except for read cycles DQn is high-Z state.

Data outputs are masked after two cycles from when high
level DQM is applied.

The /WORD pin defines the organization of each read
command to be x16 (word mode) or x32 (double word mode).
High=x32
Low=x16

3.3V Power supply

3.3V Power supply to DQ0-DQ31

Logical input level is ignored.

August , 1999
Revision 2.4

32M Synchronous OTP

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1 Semiconductor

PIN FUNCTION FOR PROGRAMMING OPERATION ( STO pin is high level )

MR27V3266D

PIN NAME

STO

AMPX

A0-A12

/RAS

/CAS

DQ0-DQ15

FUNCTION

Static Operation

Address Multiplex

Address

Row address strobe

Column address strobe

Data Input/Output

DESCRIPTION

Must be set high for programming operation. Internal
resistance (around 10k ohms) pulls the input level down to
V

SS for open state condition to be low level for synchronous

read operation.

When AMPX is low, the addresses are not multiplexed and all
address bits must be supplied to A0-A12(Row Address) and
CAP0-CAP7(Column Address) simultaneously.
This pin should be set low on programming operation.

When AMPX is low, A0-A12 is row address input.

When AMPX is low, input is not used.

When AMPX is low, input is not used.

Input of data for programming and output for program verify
and read data.

/WORD

CAP0-CAP7

/OE

/CE

V

CC/VSS

VCCQ/VSSQ Data Output Power/Ground

VPP

x32/x16 organization Selection

Address Input

Output Enable

Chip Enable

Power Supply/Ground

Program Power Supply

The /WORD pin defines the organization to be x16(word
mode) or x32(double word mode).
High= x32
Low = x16
Must be set low for programming operation.

When /WORD is low, High-Z state on CAP0-CAP7 is held to
be input pins.
When AMPX is low, CAP0 - CAP7 is column address input.

Control signal input for programming.
/OE of conventional OTP.

Control signal input for programming.
Function for programming is associated with conventional
OTP.

Power and ground for the input buffers and the core logic.

Power and ground for output.

High voltage program power is supplied through V
When V
between V
V

PP mode. To keep stable static read operation VPP pin must

be kept lower than V

PP is higher than a predetermined voltage level

CC+0.5V and VCC+2V, pin function alters to high

CC+0.5V.

PP pin.

The functionality of loose device programming must be studied with the specification of socket adapter that will be
supplied by OKI. MR27V3266D on the socket adapter is the same programming functionality as conventional OTP.

August , 1999
Revision 2.4

5

32M Synchronous OTP

1 Semiconductor

FUNCTION TABLE FOR SYNCHRONOUS READ

MR27V3266D

COMMAND NAME

Mode Register Set

Row Active

Read Word
(x16)

Read Double Word
(x32)

Burst Stop

Precharge

Clock Suspend
(on Read)

Power Down
(on Active

Standby)

Read Output

Mask Output

No Operation

( H=Logical high, L=Logical low, X=Don't Care, L of STO includes pin open due to internal pull down resistor )

Note

1. Refer to "Mode register Field Table" for Address Codes, and Mode Transition Chart for operational state.
After power on any command can be sampled at any cycle in Active Standby state.
After "Mode register Set" command is sampled, no new command can be accepted for 3 CLK cycles.
The /CS input must be kept high for the 3 CLK cycles to prevent unexpected sampling of a command.

2. The "Row Active" command is effective till new "Row Active" command is implemented.

3. The /WORD input is sampled simultaneously with "Read" command to select data width.
A Double Word Burst(x32 ) or a Word Burst(x16) is selected by the /WORD input for each "Read" command.
On condition of constant voltage level on /Word pin, organization is fixed to either x16 or x32.

"Read" command ends it's implementation by itself at the finishing cycle of the burst read.

4. Since OTP technology uses static sense amplifiers, the "Precharge" command is not required however,
due to customer request for the similarity of logical input code with SDRAM command, the name of
"Precharge" is adopted. Function of "Precharge" command and "Burst Stop" command is only to stop the burst
read cycles delayed by CAS Latency.

5. Sampled low level CKE disables CLK buffer to suspend internal clock signals at the next rising edge of CLK.
Sampled high level CKE enables internal clock at the next rising edge of CLK.
Low level CKE sampled in the period from the simultaneous cycle with a "Read" command till the end of the
burst read cycle is distinguished with internal command controller from the low level CKE sampled in Active
Standby state not to stop data sensing and burst read operation those consume power.

6. Low level CKE sampled in Active Standby state cuts power dissipation to be in Power Down state.
High level CKE sampled in Power Down state enables internal CKE to be in Active Standby state with
preserved row address.

FUNCTION

Mode Register Set

Row Address Latch

Column Address Latch
Trigger Burst Read

Column Address Latch
Trigger Burst Read

Burst Stop

Burst Stop

Entry

Exit

Entry

Exit

Output Enable

High-Z Output

Write on SDRAM

Self Refresh on SDRAM

Illegal on SDRAM

( CKEn expresses the logical level at the simultaneous cycle with a command. )

CKE

H
H

H

H

H
H
H

H

H
H
H
H
H
H
H

n-1 NotesSTO/WORDAdd.DQM/MR/CAS/RAS/CSCKEn

L

L

X
X

X

X

X
X

H

H

X
X
X

H
X
X

L

H

X
X

X

X

X
X

X

L

HH

L

H

L

L

L
X
X

X

X

X
X

LL
H

L

H

L

X

LL
L

L

H

L

H

L

H

L

LH

LL

L

X

X

L

X

X

X

H

L

X

X

X

X

X

X

H

L

L

L

L

L

L

X

H

HHH

L

X
X

X

X

X
X
X
X

X

X

H
X
X
X
X
X

Code

RA

CA

CA

L

X
X
X
X

X

X

X
X
X
X
X
X
X

X
X

L

HH

X
X
X
X

X

X

X
X
X
X
X
X
X

1

L

2

L

3

L

3

L

4

L

4

L

5

L

5

L

6

L

6

L

L
L
L
L
L
L
L

August , 1999
Revision 2.4

32M Synchronous OTP

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1 Semiconductor

MODE REGISTER FIELD TABLE

Address A5 A0A1A2A3A4

CAS Latency Burst Type Burst LengthFunction

MR27V3266D

A3A4A5

0

0

0

0

0

0

0

1

1

1

1

Note
A7 and A8 must be low during Mode Register Set cycle.
During power on, mode register is initialized to the default state when V
The default state of Mode Register is below. (less than 3.0V)

CAS Latency=5
Burst Type=Sequential
Burst length=4

1

1

000

0

1

1

1

0

1

1

1

Length

Reserved

Reserved

Reserved

4

5

Reserved

Reserved

Reserved

BURST SEQUENCE ( BURST LENGTH = 4 )

Initial address

A1 A0

0

0

Sequential Interleave

0

1

2

0

3

1

Type

A2

Sequential

0

Interleave

1

CC reaches a specific voltage.

2

3

A0A1

00

0

1

0

1

1

1

Length

Reserved

4

8

Reserved

0

1

1

0

11

1

2

2

3

0

3

0

3

0

1

1

2

0

1

2

3

2

3

BURST SEQUENCE ( BURST LENGTH = 8 )

Initial address

0

0

0

0

1

1

1

1

August , 1999
Revision 2.4

A0A1A2

0

0

1

0

0

1

0

0

1

1

1

2

0

2

3

11

3

4

0

4

5

1

5

6

0

6

7

11

7

Sequential

2

34

3

4

5

6

71

001

1

5

4

6

5

7

6

0

7

0

2

2

3

2

3

0

1

0

1

Interleave

5

6

7

0

1

2

34

6

7

0

1

7

0

1

2

0

1

2

3

1

2

3

4

2

3

3

4

4

5

5

4

5

6

6

7

3

2

3

001

2

5

4

7

6

0

1

6

7

6

71

4

5

5

4

5

6

7

0

2

312

5

6

7

6

7

4

4

7

6

0

3

5

5

4

3

2

3

2

0

1

0

1

32M Synchronous OTP

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1 Semiconductor

ADDRESSING MAP

(1) /WORD = "H" : x32 Organization

MR27V3266D

Pin Name

Row Address

Column Address

(2) /WORD = "L" : x16 Organization

Pin Name

Row Address

Column Address

(3) Programming

Address displayed on
programmer : x16

Device Address : x16
STO = "H", AMPX = "L"

Address ( STO = "L" )
/WORD = "L" : x16

Address ( STO = "L" )
/WORD = "H" : x32

Address displayed on
programmer : x16

Device Address : x16
STO = "H", AMPX = "L"

Note1

Note2 Note3

CA1

Ad13 Ad14

A5 A6

A5 A6A2 A3 A4A0 A1 A7 A8 A9 A10 A11 A12

RA5 RA6RA2 RA3 RA4RA0 RA1 RA7 RA8 RA9 RA10 RA11 RA12

CA5 CA6CA2 CA3 CA4CA0CA1 XXXXXX

A5 A6A2 A3 A4A0 A1 A7 A8 A9 A10 A11 A12

RA5 RA6RA2 RA3 RA4RA0 RA1 RA7 RA8 RA9 RA10 RA11 RA12

CA5 CA6CA2 CA3 CA4CA0 CA1 CA7 X X X X X

Ad5 Ad6Ad2 Ad3 Ad4Ad0 Ad1 Ad7 Ad8 Ad9 Ad10 Ad11 Ad12

CAP5 CAP6CAP2 CAP3 CAP4CAP0 CAP1 CAP7 A2 A3 A4A0 A1

CA3 CA4CA0

CA5 CA6

CA5 CA6

CA7

CA3 CA4CA0

CA2

Note4

Note5

CA2

CA1

Ad15 Ad16 Ad17 Ad18 Ad19 Ad20

A7 A8 A9 A10 A11 A12

( X = Don't Care )

( X = Don't Care )

RA2 RA3 RA4RA0 RA1

RA2 RA3 RA4RA0 RA1

Address ( STO = "L" )
/WORD = "L" : x16

Address ( STO = "L" )
/WORD = "H" : x32

User of MR27V3266D is recommended to study the relation between "Address displayed on programmer" and
"Address(STO="L")" ignoring "Device Address:x16, STO="H"".
Order of data on Synchronous Read operation(STO="L") is checked on this table.
"Device Address:x16, STO="H"" will be utilized to design socket adapter on programmer or to check boards
designed to mount blank OTP and program OTP on board.
OKI will supply socket adapter to program MR27V3266D as conventional x16 standard OTP. The users and the
venders of programmer who use the socket adapter can ignore "Device Address:x16, STO="H"".

Note

1. A0 in programmer distinguishes upper word(x16) or lower word(x16) of Double word(x32).
On word(x16) organization the address of device corresponds to the address of programmer.
On double word(x32) organization the address numeral code of device is half of that in programmer, and
output on DQ0-DQ15 is lower word(A0="0") and output on DQ16-DQ31 is upper word(A0="1").

2. CA1 is MSB of burst read on condition of /WORD="L" and BL=4

3. CA2 is MSB of burst read on condition of /WORD="L" and BL=8

4. CA1 is MSB of burst read on condition of /WORD="H" and BL=4

5. CA2 is MSB of burst read on condition of /WORD="H" and BL=8

RA5 RA6 RA7 RA8 RA9 RA10 RA11 RA12

RA5 RA6 RA7 RA8 RA9 RA10 RA11 RA12

August , 1999
Revision 2.4

32M Synchronous OTP

8

1 Semiconductor

MR27V3266D

READ OPERATIONS

CLOCK ( CLK )

The clock input enables MR27V3266D to sample all the inputs, control internal circuitry, and turn on output drivers. All
timings are referred to the rising edge of the clock. All inputs with high level CKE and low level /CS should be valid at
the rising edge of CLK for proper functionality.

CLOCK ENABLE ( CKE )

The clock enable(CKE) turns on or switches off the admission of the clock input into the internal clock signal lines. All
internal circuits are controlled by the internal clock signal to implement every command. High level CKE sampled at
CKEn-1 clock cycle enables the admission of the rising edge of clock input into internal clock line at CKEn cycle. Low
level CKE sampled at CKEn-1 cycle suspends the rising edge of CLK at CKEn cycle. The suspension of internal clock
signal in all state ignores new input except CKE, and holds internal state and output state. Low level CKE in Active
Standby state, defined as Power Down state, cuts power dissipation. In Power Down state the contents of mode
register and Row Address are preserved. After recovering high level CKE to exit from Power Down state,
MR27V3266D is in Active Standby state. Low level CKE just after the sampling of "Read" command till the completion
of burst read, defined as Clock Suspend, makes read operation go on with power dissipation. Any command operation
does not interrupted by arbitrary low level CKE. Sampling command with low level CKE preceded with high level CKE is
illegal.

POWER ON

Apply power and start clock considering following issues.

1. During power on Mode Register is initialized into default state.
(default state: CAS latency=5, Burst Type=Sequential, Burst length=4)

2. After power on MR27V3266D is in Active Standby state and ready for "Mode Register set" command or

"Row Active" command. MR27V3266D requires neither command nor waiting time as power on sequence after
starting CLK input in order to start "Row Active" command to read data.

3. It is recommended in order to utilize default state of Mode Register that /MR and CKE inputs are maintained

to be pulled up during power on till the implementation of the first "Row Active" command.
After above power on "Row Active" command and "Read" command can be started immediately on default
Mode Register state.

4. It is recommended that DQM input is maintained to be pulled up to prevent unexpected operation of output

buffers.

ORGANIZATION CONTROL

Organization of data output(DQ0-DQ31) depends on the logical level on /WORD at the input timing of every "Read"
command. High level sampling of /WORD derives double word mode(x32) output and low level sampling of /WORD
derives word mode(x16) output. Constant /WORD level input brings consistent organization.

MODE REGISTER

Mode register stores the operating mode of MR27V3266D. Operating modes are consisted with CAS latency, Burst
Type, and Burst Length. Registration of RAS latency is not required, because RAS to CAS delay(tRCD) is requested
independently of system clock. When the contents of Mode register are required to be changed for the next
operation, "Mode Register Set" command can be sampled at any cycle in Active Standby state. After "Mode Register
Set" command is sampled, /CS must be fixed to logical high level to prevent sampling of new command input during
succeeding three clock cycles.
Refer to Mode Register Field Table for the relation between Operation modes and input pin assignment.

August , 1999
Revision 2.4

32M Synchronous OTP

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1 Semiconductor

MR27V3266D

READ OPERATIONS

CAS LATENCY

After sampling "Read" command MR27V3266D starts actual data read operation with sense amplifiers, and transmits
the data from sense amplifiers to data out buffers to start burst read. This flow of sequential functionality takes time
as clock cycles defined as CAS latency(CL). CAS latency is set in Mode Register as either four cycles or five cycles.
In this sequence(from sampling "Read" command to start of driving data bus) sense amplifiers consume maximum
current flow. The detailed sequence is below.

1. Fix column address of memory matrix driver. Row address is already fixed with "Row Active" command.

(at 1st cycle)

2. Read data of selected memory cells with sense amplifiers.

3. Deliver data detected with sense amplifiers to the register for data output latch.

4. Couple selectively the section of the register storing each (double)word to output buffers.

5. Turn off sense amplifiers to save power. (at CL-1 cycle)

6. Enable output buffers to drive data bus. (at CL-1 cycle)

7. Data output on data bus can be sampled at the rising edge of system clock at CL cycle.

New "Row Active" command or new "Read" command can be sampled to perform gapless burst read at CL-1 clock
cycle of the last "Read" command. New command preceding CL-1 cycle interrupts sense amplifiers to read the data at
the selected memory cells of the last "Read" command. Interrupted "Read" command perishes or outputs invalid data
before the starting of the data burst of new "Read" command. Refer to the timing chart of "Burst Read/Interrupt I" and
"Burst Read/Interrupt II".

BURST READ

Data outputs are consecutive during the cycle number defined as Burst Length(BL). The latest burst read is
completed unless any interruption such as "Precharge" command stops the sequential data output. Burst Length is set
in Mode Register as either four or eight. After sampling of "Read" command the first output can be read at the cycle
delayed by CAS latency. Burst Type is also stored in Mode register as either sequential or interleave. The output
buffers go into high impedance state after burst read sequence is finished, unless a new "Read" command has been
sampled to perform gapless read or preemptive read. Burst read can be interrupted by "Burst Stop" command or
"Precharge" command at the cycle delayed by CAS latency from the command. On condition that reading data with
sense amplifiers of preceding "Read" command is not interrupted by new "Read" command or "Row active" command,
burst read of preceding "Read" command is continued regularly until the burst data sequence of the new "Read"
command starts. The new(latest) burst data sequence always starts regularly.

DQM

Input level on DQM is sampled at rising edge of system clock to mask data at two cycles later. Output of masked data
is high-Z state.

August , 1999
Revision 2.4

32M Synchronous OTP

10

1 Semiconductor

READ OPERATIONS

MODE TRANSITION CHART

Row Active Mode Register Set

Active Standby

MR27V3266D

CKE=H CKE=L

Power Down

Exit

Entry

Note

Entry

Clock Suspend

Read

Exit

DQM

Burst Stop

Precharge*

*All operation of "Precharge" command is to stop burst read.

: passing command

: state can be kept for any duration

August , 1999
Revision 2.4

32M Synchronous OTP

11

1 Semiconductor

ABSOLUTE MAXIMUM RATINGS

MR27V3266D

Parameter

Voltage on V

Voltage on Any pin Relative to VSS

Voltage on VPP Relative to VSS

Operating Temperature

Storage Temperature

Short Circuit Current

Power Dissipation

CC Relative to VSS

Symbol Min Max Unit

V

CC,VCCQ

V

IN, VOUT, DC

V

PP

Ta

Tstg

I

OS

PD

-0.5

-0.5

-0.5

0

-55

-

-

5

CC + 0.5

V

10

70

125

50

1

V

V

V

degree C

degree C

mA

W

RECOMMENDED OPERATING CONDITIONS for SYNCHRONOUS READ

Parameter

Power Supply Voltage

Voltage Level on DC pin

Input High Voltage

Input Low Voltage

Symbol Min Max UnitTyp

V

CC,VCCQ 3.0

V

VIL

-

IH

-0.5

2.0

-0.3

3.3 3.6

-

-

-

V

CC + 0.3

5

0.8

V

V

V

V

Operating Temperature

CAPACITANCE

Parameter

Input Capacitance

Output Capacitance

Ta

Symbol Min Max Unit

C

IN

COUT

0

-

-

-

5

7

70

pF

pF

degree C

August , 1999
Revision 2.4

32M Synchronous OTP

12

1 Semiconductor

DC CHARACTERISTICS FOR SYNCHRONOUS READ

MR27V3266D

Parameter

Power Down Current

Active Standby Current

Gapless Burst Read Current

Input Leak Current

Output Leak Current

Input High Voltage

Input Low Voltage

Voltage Level on DC pin

Output High Voltage Level

Output Low Voltage Level

( Voltage levels are referred to V

SS )

Symbol Min Max Test conditionUnit

I

CCS1 mA

I

CCS2

ICC1

ICC2

IIL

IOL

VIH

VIL

VOH

VOL

-

-

-

-

-10

-10

2.0

-0.3

-0.5

2.4

-

1

100

100

150

10

10

5

0.8

V

CC + 0.3

-

0.4

µA

mA

mA

µA
µA

V

V

V

V

V

CKE = 0.8V

CKE = 0V

CKE = 2.0V

CKE = V

0V > VIN > VCC + 0.3V

0V > V

Note1

OH = -2mA

I

I

OL = 2mA

CC

IN > VCC

tCC = 15ns

/CS = V
tCC = 15ns

tCC = 15ns,
DQM = H, CL = 4,
BL = 4

CC

Note

1. V

IL min can be -1.5V for the pulse width shorter than 10ns.

Pulse width is measured at 50% of pulse peak level.

August , 1999
Revision 2.4

32M Synchronous OTP

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1 Semiconductor

AC CHARACTERISTICS FOR SYNCHRONOUS READ ( 1/2 )

MR27V3266D

Parameter Symbol Min Max Unit

CLK Cycle time

Data to Valid Output Delay

Data Output Hold Time

CLK High Pulse Width

CLK Low Pulse Width

Input Setup Time

Input Hold Time

CLK to Output in Low-Z

CLK to Output in High-Z

Input Level Transition Time

"Row Active" to "Read" Delay Time

"Read" to "Row Active" delay
( Words of preceding "Read"

command can be read )

< Random Access >

"Read" to "Read" delay
( Words of preceding "Read"

command can be read )

< Sequential Access >

"Row Active" Cycle Time
( Words of preceding "Read"

command can be read )

< Random Access >

"Read" to "Read" delay
( Gapless burst read )

< Sequential Access >

BL = 4

BL = 8

BL = 4

BL = 8

BL = 4

BL = 8

BL = 4

BL = 8

CL = 4

CL = 5

CL = 4

CL = 5

CL = 4

CL = 5

CL = 4

CL = 5

CL = 4

CL = 5

CL = 4

CL = 5

CL = 4

CL = 5

CL = 4

CL = 5

tCC

tAC

tOH

tCH

tCL

tSI

tHI

tOLZ

tOHZ

tT

tRCD

tCRD

tCRD

tCRD

tCRD

tCCD

tCCD

tCCD

tCCD

tRC

tRC

tRC

tRC

tCCD

tCCD

tCCD

tCCD

15

-

3

4

4

3

1.5

0

-

0.1

1CLK

2CLK - Cycle

3CLK

4CLK

3CLK

4CLK

3CLK

4CLK

3CLK

4CLK

3CLK + tRCD

4CLK + tRCD

3CLK + tRCD

4CLK + tRCD

4CLK

4CLK

8CLK

8CLK

-

9

-

-

-

-

-

-

10

10

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

ns

ns

ns

ns

ns

ns

ns

ns

ns

ns

Cycle

Cycle

Cycle

Cycle

Cycle

Cycle

Cycle

Cycle

Cycle

Cycle

Cycle

Cycle

Cycle

Cycle

Cycle

Cycle

Cycle

Notes

2

1,2

1

1,2

1

1,2

1

1,2

1

1,2

1

1,2

1

2

1

2

"Read" to "Burst Stop" Delay

"Read" to "Precharge" Delay

Power Down Exit Setup Time tPDE

Note

1. Shortage of clock cycles interrupt the data sensing of preceding "Read" command.
The shortage of cycle time for preceding command is detected by internal command controller to cease
the preceding command operation.
The latest "Row Active" or "Read" command is completed.
When legal tCCD is shorter than BL, burst read is terminated with another burst read.

2. Up to 50MHz

August , 1999
Revision 2.4

14

1CLK

1CLK

tSI + 1CLK

32M Synchronous OTP

-

-

-

Cycle

Cycle

Cycle

1 Semiconductor

AC CHARACTERISTICS FOR SYNCHRONOUS READ ( 2/2 )

Parameter Symbol Value Unit Notes

MR27V3266D

Clock Disable time from CKE

Clock Enable time from CKE

Output High impedance from DQM

Recovery from DQM

Output High impedance from "Burst Stop"

Output High impedance from "Precharge"

"Row Active" input from "Mode Register Set"

AC TEST CONDITIONS

Parameter Values Notes

Input Signal Levels

Timing Reference Level of Input/Output Signals

Transition Time of Input Signals

Output Load

tCKE

tCKE

tDQM

tDQM

tBOH

tPOH

tMRD

1CLK

1CLK

2CLK

2CLK

CL

CL

3

IH / VIL = 2.4V / 0.4V

V

1.4V

tr / tf = 1ns / 1ns

LVTTL

Cycle

Cycle

Cycle

Cycle

Cycle

Cycle

Cycle

1

2

Note1
Transition time of input signals is measured between 0.8V and 2.0V .
If tr or tf is longer than 1ns, "Timing Reference Level of Input/Output Signals" is changed to V
or 2.0V respectively.

Note2

Output Load

1.4V

50 ohms

Z0 = 50 ohms

Output

50 pF

IL or VIH / 0.8V

August , 1999
Revision 2.4

32M Synchronous OTP

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1 Semiconductor

Read Cycle I : Random Access @ CAS Latency = 5, Burst Length = 4

0 1 2 3 4 5 6 7 8 9 10111213141516171819

CLK

tCC

tCH tCL High

CKE

tRC

CS

tSI

tHI

RAS

MR27V3266D

CAS

ADDR

DQ

MR

tRCD

Ra Ca Rb Cb

tOH

a0 a1 a2 a3 b0 b1 b2 b3

tAC

Row Active Read Row Active Read

tOHZ

Don't Care

August , 1999
Revision 2.4

32M Synchronous OTP

16

1 Semiconductor

MR27V3266D

Read Cycle II : Random Access with Gapless Burst @ CAS Latency = 4, Burst Length = 4

(Up to 50MHz)

0 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19

CLK

tCC

tCH tCL High

CKE

tRC

CS

tSI

tHI

RAS

CAS

ADDR

DQ

MR

tRCD

Ra Ca Rb Cb Rc Cc

tOH

a0 a2 b0 b1 b2 b3

tAC

Row Active

Read

Row Active

Read

a3a1

Row Active

c0 c1 c2 c3

Don't Care

Read

August , 1999
Revision 2.4

32M Synchronous OTP

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1 Semiconductor

Read Cycle III : Consecutive Column Read @ CAS Latency = 5, Burst Length = 4

0 1 2 3 4 5 6 7 8 9 10111213141516171819

CLK

tCC

tCH tCL High

CKE

CS

tSI

tHI

RAS

MR27V3266D

CAS

ADDR

DQ

MR

tRCD

tCCD

Ra Ca Cb

tAC

Row Active Read Read

tOH

a0 a1 a2 a3 b0 b1 b2 b3

tOHZ

Don't Care

August , 1999
Revision 2.4

32M Synchronous OTP

18

1 Semiconductor

"Burst Stop" command & "Precharge" command @ CAS Latency = 5

0 1 2 3 4 5 6 7 8 9 10111213141516171819

CLK

tCC

tCH tCL High

CKE

CS

tSI

tHI

RAS

MR27V3266D

CAS

ADDR

DQ

MR

tRCD

tBOH

Ra Ca Rb Cb

tAC

Row Active Read

Burst Stop

Row Active

tPOH

tOH

a0 a1 b0 b1

tOHZ

Read

Precharge

Don't Care

August , 1999
Revision 2.4

32M Synchronous OTP

19

1 Semiconductor

Clock Suspend @ CAS Latency = 5, Burst Length = 4

0 1 2 3 4 5 6 7 8 9 10111213141516171819

CLK

tCC

tCH tCL

CKE

CS

tSI

tHI

RAS

MR27V3266D

tCKEtCKE tCKEtCKE

CAS

ADDR

DQ

MR

tRCD

tCCD

Ra Ca Cb

Row Active Read

Clock Suspend

Read "a" operation ( Note2 )

a0

( Note1 )

Read

Entry

Exit

Clock Suspend

Entry

Read "b" operation

a1 a2 a3 b0 b1 b2 b3

Exit

Don't Care

Note

1. At cycle number 9, 12, 13, rising edge of internal clock is omitted because of low level CKE at cycle 8, 11,12.

2. Clock suspend is defined with the low level CKE sampled in the period of Read operation.

August , 1999
Revision 2.4

20

32M Synchronous OTP

1 Semiconductor

Power Down @ CAS Latency = 4, Burst Length = 4

0 1 2 3 4 5 6 7 8 9 10111213141516171819

CLK

tCC

tCH tCL

CKE

CS

Read Operation

RAS

MR27V3266D

tSI

tPDE

Power Down ( Note1 )

Active Standby

CAS

ADDR

DQ

Ca

a0 a1

a2

a3

MR

Read Power Down

Entry

Note

1. Minimum current consumption is expected in Power Down state.
Low level CKE sampled only in Active Standby state is defined as Power Down "Entry" command and it cuts
current consumption into minimum level.
After Power Down "Exit" the contents of Mode Register and row address is preserved.
During Power Down state no command can be sampled.

Power Down

Exit

Row Active

August , 1999
Revision 2.4

32M Synchronous OTP

21

1 Semiconductor

Mode Register Set @ CAS Latency = 4, Burst Length = 4

0 1 2 3 4 5 6 7 8 9 10111213141516171819

CLK

tCC

tCH tCL

CKE

tMRDPower Down

CS

RAS

MR27V3266D

CAS

ADDR

DQ

MR

High-Z

Power Down

Entry

key

Mode
Register Set

Power Down

Exit

Rb Cb

Row Active

Read

b0 b1

b2

b3

August , 1999
Revision 2.4

32M Synchronous OTP

22

1 Semiconductor

DQM Operation @ CAS Latency = 4, Burst Length = 8

0 1 2 3 4 5 6 7 8 9 10111213141516171819

CLK

MR27V3266D

CMD

CKE

DQM

DQ

RD

High-Z

tCKE

Q0 Q1 Q3 Q6Q4 Q7

tCKE

tDQMtDQM

August , 1999
Revision 2.4

32M Synchronous OTP

23

1 Semiconductor

Burst Read / Interrupt I @ CAS Latency = 4, Burst Length = 4

0 1 2 3 4 5 6 7 8 9 10111213141516171819

CLK

MR27V3266D

CMD

ADDR

DQ

RD<a> is interrupted by RD<b>.

RD RD RD RD RD

tCCD

a b c d e

High-Z

RD<a> command perishes.

Qb0 Qb1 Qb2 Qb3 Qc0 Qe0 Qe1 Qe2 Qe3

RD<d> sets up Qc2
as the final Qcn.

RD<d> is interrupted by

Qc1 Qc2

Output states of interrupted command

preceded by data read cycle is invalid.

RD<e>.

Burst Read / Interrupt II @ CAS Latency = 4, Burst Length = 4

Invalid

State

Invalid state : "H","L", or High-Z

CLK

CMD

ADDR

DQ

August , 1999
Revision 2.4

0 1 2 3 4 5 6 7 8 9 10111213141516171819

tRC

RD ACT RD ACT RD

tRCD

Ac B b

High-Z

RD<c> is interrupted by ACT<A>

tCRD

a

Qb0 Qb1 Qb2 Qb3Qa0 Qa1 Qa2 Qa3

Invalid State

32M Synchronous OTP

24

1 Semiconductor

Preemptive Burst Read I @ CAS Latency = 4, Burst Length = 8

0 1 2 3 4 5 6 7 8 9 10111213141516171819

CLK

MR27V3266D

CMD

ADDR

DQ

RD RD RD RD

a b c d

High-Z

Qb0 Qb1 Qb2 Qb3 Qc0 Qc3 Qc4 Qd0 Qd1

Preemptive Burst Read II @ CAS Latency = 4, Burst Length = 8

0 1 2 3 4 5 6 7 8 9 10111213141516171819

CLK

Qc1 Qc2

Qd2Qa0 Qa1 Qa2

CMD

ADDR

DQ

August , 1999
Revision 2.4

ACT RD ACT RD

A A b

a

High-Z

25

Qb0 Qb1 Qb2 Qb3Qa0 Qa1 Qa2 Qa3

Qa4 Qb4 Qb5 Qb6 Qb7

32M Synchronous OTP

1 Semiconductor

)

RECOMMENDED OPERATING CONDITIONS AND DC CHARACTERISTICS

FOR PROGRAMMING ( STO is High Level

MR27V3266D

Parameter

V

PP Supply Voltage

V

CC Supply Voltage

VPP Current

V

CC Current

Input Leak Current

Output Leak Current

Output High Voltage Level

Symbol Min Max ConditionUnit

PP1

V

V

PP2

VCC1

VCC2

VCC3

9.5

-0.3

3.9

2.9

2.9

IPP1

IPP2

ICCP1

ICCP2

ICCP3

IIL

IOL

VOH

-10

-10

2.4

Typ

9.75

CC

V

4.0

3.0

-

-

-

-

-

-

-

-

-

-

-

-

-

-

10

CC + 0.5

V

4.1

3.1

3.4

50

100

150

150

10 mA

10

10

-

V

V

V

V

V

mA

µA

mA

mA

µA
µA

V

Program Mode

Read Mode

Program Mode

Read Mode

Optional Read Mode

V

PP = 10V, VCC = 4.1V

V

PP = VCC = 4.1V

V

PP = 10V, VCC = 4.1V

V

PP = VCC = 4.1V

PP = VCC = 4.1V,

V

tC = 1µS, /CE = H

OH = -400µA

I

Notes

1

2

1

2

2

Output Low Voltage Level

Input High Voltage

Input Low Voltage

Voltage Level on DC pin

/OE Input Distinctive High Voltage

Operating Temperature

( Voltage levels are referred to V

SS )

Notes

1. Program represents the modes below.
Program, Program Verify, Program Inhibit

2. Read represents the modes below.
Read, Output Disable, Standby

VOL

VIH

VIL

V

Ta

-

2.9

-0.3

-0.3

H

7.75

-

-

-

-

8

20

0.45

VCC + 0.5

0.45

V

CC + 0.5

8.25

3025

V

V

V

V

V

degree C

I

OL = 2.1mA

CC = 4.1V

V

V

CC = 2.9V

August , 1999
Revision 2.4

32M Synchronous OTP

26

1 Semiconductor

FUNCTION TABLE FOR PROGRAMMING

MR27V3266D

Function

Program

Program Inhibit

Program Verify

Read

Output Disable

Full Static

Standby

Contact Check

Contact Check

L

L

L

L

L

L

L

L

DQ0­DQ15

D

DOUT

AAAA

5555 55

CC VPP Add.

4.0V

9.75V

4.0V

9.75V

3.0V

3.0V

3.0V

4.0V

4.0V

3.0V

3.0V

3.0V

4.0V

4.0V

/CE /OE /WORDV

H

H

L

L

L

L

L

H

H

X

L

8V

L

8V

CAP0-

CAP7

IN A0 - A7L4.0V 9.75V A8 - A20

D

HZH

OUT

HZ

HZ

A0 - A7

A0 - A7

A0 - A7

A0 - A7

A0 - A7

A8 - A20

A8 - A20

A8 - A20

A8 - A20

A8 - A20

AA

16AA

0955

/RAS

AMPX STO Note

/CAS

X

L

X

L

X

L

X

L

X

L

X

L

X

X

X

X

s

H

H

H

H

H

H

H

1

H

1

( H = Logical High, L = Logical Low, X = Don't Care in the range of logical level )

Note

1. Dual procedures to check complementary output codes on the indicated complementary address inputs
assure every address, DQ, and /OE pin connection.
When address input code is incorrect, output code is "FFFF".

August , 1999
Revision 2.4

32M Synchronous OTP

27

1 Semiconductor

MR27V3266D

PROGRAMMING OPERATION

STO

Synchronous read is far different from anyone of conventional nonvolatile memories. STO input level switches
operation mode either synchronous read or conventional EPROM/OTP type programming. The word "Programming"
contains actual programming(inject electrons into floating gates of memory cells), program verify(verify data on actual
programming bias), and read on programmer. High level STO assures full compatible programming operation with
conventional EPROM/OTP. Low level STO assures high speed synchronous read.
"Full static programming" is recommended for loose devices.

PROGRAM

MR27V3266D is programmed with 10 microsecond pulse width on 4.0V VCC and 9.75V VPP. OKI recommends
consecutive programming, because of the similarity of device sorting process. Almost all words can be programmed
sufficiently with one pulse. Programmers are recommended to be equipped with large current capacity of V

supplying source and responsive capacitance(around 0.1µF) on each socket to stabilize VPP and VCC voltage level,

since switching speed of transistors produced with advanced wafer process technology is very fast and high voltage
immunity of those is decreasing. Excessive overshooting of V
overshooting of V
may cause insufficient electron injection into floating gate. Additional programming increases programming time.

CC voltage may cause misprogramming or disturbance. Excessive undershooting of VPP or VCC level

PP voltage may destroy device permanently. Excessive

PP and VCC

PROGRAM INHIBIT

When VPP is 9.75V, address must be changed only in "Program Inhibit" mode.

PROGRAM VERIFY

This operation mode is utilized to check that each word is programmed sufficiently. It is recommended to take time
more than some seconds between actual programming and "Program Verify" ("Read") for each word, because just after
the actual programming(injection of electron into floating gate) of each word, pretended excessive electrons are
attached around floating gate to show false sufficiency of programming. Programing flow is selected to separate
"Program" and "Program Verify" to take enough time.

CONTACT CHECK

When programmed OTP lot contains failed devices by the rate of more than 0.1%, some of or almost all failed devices
are caused by misconnection with the sockets on the programmer. The possibility of misconnection is increased with
surface mount devices such as SOP or TSOP.
OKI will supply socket adapters exclusively applicable to MR27V3266D, but connections of all pins can not be assured
with these socket adapters.
Following contact check sequence before actual programming is recommended.

1. Supply V

2. Bias logical low level on /CE.

3. Supply 8V on /OE to enable contact check mode.

4. Apply two address codes and check each output respectively.
If irregular address code is applied, then output is FFFF.
<Connection of Address, D

5. /CE must be checked with a method suitable for the programmer.

6. V

PP can be checked with current flow(more than 100 µA) in Program Inhibit mode.

7. AMPX and /WORD pins is open in the socket adapter, since these pins are pulled down to V

CC with 4.0V power source.

OUT, VCC, /OE,and STO pins are checked>

SS when STO is high.

August , 1999
Revision 2.4

32M Synchronous OTP

28

1 Semiconductor

AC CHARACTERISTICS FOR PROGRAMMING ( STO is High Level )

MR27V3266D

Parameter

V

PP Setup Time

Address Setup Time

Data Setup Time

Address Hold Time

Data Hold Time

Program Pulse Width

/OE Setup Time

Data Valid from /OE

Symbol Min Max ConditionUnit

tVS

tAS

tDS

tAH

tDH

tPW

tOES

tOE

100

100

100

Typ

2

2

9

2

-

10

-

-

-

-

-

-

-

-

-

-

-

-

11

-

100

µs

ns

ns

µs

ns

µs
µs

ns

PP = 9.75V, VCC = 4.0V

V

V

PP = 9.75V, VCC = 4.0V

V

PP = 9.75V, VCC = 4.0V

V

PP = 9.75V, VCC = 4.0V

V

PP = 9.75V, VCC = 4.0V

V

PP = 9.75V, VCC = 4.0V

V

PP = 9.75V, VCC = 4.0V

PP = 9.75V, VCC = 4.0V

V

Notes

August , 1999
Revision 2.4

32M Synchronous OTP

29

1 Semiconductor

AC CHARACTERISTICS FOR VERIFY AND READ ( STO is High Level )

MR27V3266D

Parameter

Address Access Time

/RAS Access Time

/CAS Access Time

/CE Access Time

/OE Access Time

/CE High to Output Float Delay

/OE High to Output Float Delay

Address Hold from /OE high

Symbol Min Max ConditionUnit

tACC

tACC

tACC

tCE

tOE

tCHZ

tOHZ

tAHO

Typ

-

-

-

-

-

-

0

-

-

-

-

-

--

-

-

80

80

80

80

30

25

20

-

ns

ns

ns

ns

ns

ns

ns

ns

PP = VCC = 2.9 - 4.1V

V

V

PP = VCC = 2.9 - 4.1V

V

PP = VCC = 2.9 - 4.1V

V

PP = VCC = 2.9 - 4.1V

V

PP = VCC = 2.9 - 4.1V

V

PP = VCC = 2.9 - 4.1V

V

PP = VCC = 2.9 - 4.1V

V

PP = VCC = 2.9 - 4.1V

Notes

August , 1999
Revision 2.4

32M Synchronous OTP

30

1 Semiconductor

CONSECUTIVE PROGRAMMING WAVEFORMS ( AMPX = L )

CAP0 - CAP7

A0 - A12

tAHtAS

tPW

CE

High

OE

tDS tDH

MR27V3266D

DQ0 - DQ15

V

PP

DIN DIN

tVS

August , 1999
Revision 2.4

32M Synchronous OTP

31

1 Semiconductor

CONSECUTIVE PROGRAM VERIFY CYCLE ( VPP = 9.75V, AMPX = L )

CAP0 - CAP7

A0 - A12

High

CE

tACC

OE

Note1

tOE

tAHO

tOHZ

MR27V3266D

DQ0 - DQ15

DOUT DOUT

Note

1. Falling edge of /OE must be preceded with data stabilizing time of more than tACC max., because output of
invalid state can cause unstable system operation.

Output buffer of MR27V3266D is designed to drive 100pF load in 5ns.

August , 1999
Revision 2.4

32

32M Synchronous OTP

1 Semiconductor

PROGRAM AND PROGRAM VERIFY CYCLE WAVEFORMS ( AMPX = L )

CAP0 - CAP7

A0 - A12

tAS

tPW

CE

tOES

OE

MR27V3266D

DQ0 - DQ15

V

PP

tOHZ

tDS tDH tOHZ

DIN

9.75V

tOE

DOUT

August , 1999
Revision 2.4

32M Synchronous OTP

33

1 Semiconductor

READ CYCLE ( AMPX = L )

CAP0 - CAP7

A0 - A12

CE

MR27V3266D

OE

DQ0 - DQ15

tACC

tCE

tOE

DOUT DOUT

tCHZ

tOHZ

August , 1999
Revision 2.4

32M Synchronous OTP

34

1 Semiconductor

PROGRAMMING FLOW CHART

START

VPP = VCC = 4.0V

CONTACT CHECK

ADDRESS = FIRST LOCATION

VCC = 4.0V

V

PP = 9.75V

MR27V3266D

INCREMENT

ADDRESS

INCREMENT

ADDRESS

PROGRAM ONE 10µs PULSE

NO

LAST ADDRESS

YES

X = 0

VERIFY

ONE WORD

PASS

NO

LAST ADDRESS

YES

VPP = VCC = 3.0V

READ WORDS

NG

NG

YES

X = X + 1

X = 2

NO

PROGRAM ONE

10µs PULSE

August , 1999
Revision 2.4

PASS

DEVICE PASSED

35

DEVICE FAILED

32M Synchronous OTP

1 Semiconductor

MR27V3266D

REVISION HISTORY

Revision 2.0 Revision 2.1

1. Page 13
Active Standby Current (ICC1) was revised from 50mA to 100mA.

2. Page 14

Regarding Note 1, it was revised from " .... internal command controller to cease the preceding command operation

to keep output buffer high-Z state instead of the null output
preceding command operation " ( underlined portion was eliminated. ).

3. Page 24
Regarding the timing diagram of " Burst Read / Interrupt II , DQ timing diagram was revised as bellow :

" to " .... internal command controller to cease the

DQ Qb0 Qb1 Qb2 Qb3Qa0 Qa1 Qa2 Qa3

DQ Qb0 Qb1 Qb2 Qb3Qa0 Qa1 Qa2 Qa3

High-Z

High-Z

Invalid State

Revision 2.1 Revision 2.2

1. Page 14
tRCD (" Row Active " to " Read " Delay Time ) was revised from 1CLK to 2CLK.

2. Page 17
Contents of this page ( timing diagram of " Random Access with Gapless Burst ") was eliminated.

Revision 2.2 Revision 2.3

1. Page 5 , 8
All descriptions of the case in " AMPX is high " were eliminated.

2. Page 27
All function table of " Address Multiplexed " and relational notes (2,3 and 4) were eliminated.

3. Page 29 , 30
All timing parameters regarding " Address Multiplexed " and relational notes (1 and 2) were eliminated.

4. Page 31 , 32 , 33 , 34
All timing waveforms regarding " Address Multiplexed " were eliminated.

Revision 2.3 Revision 2.4

1. Page 14
tAC (Data to Valid Output Delay ) was revised from 10ns to 9ns.
tOH (Data Output Hold Time ) was revised from 4ns to 3ns.
tSI (Input Setup Time ) was revised from 4ns to 3ns.
tHI (Input Hold Time ) was revised from 2ns to 1.5ns.
tRCD (" Row Active " to " Read " Delay Time ) =1 CLK was added in case of up to 50MHz.

2. Page 17
Contents of this page ( timing diagram of " Random Access with Gapless Burst ") was republished in case of
up to 50MHz.

August , 1999
Revision 2.4

36

32M Synchronous OTP