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This version : Dec. 1999
Previous version: ----------
MR27V3202E
Preliminary
2,097,152–Word ×××× 16–Bit or 4,194,304–Word ×××× 8–Bit One Time PROM
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GENERAL DESCRIPTION
The MR27V3202E is a 32 Mbit electrically Programmable Read-Only Memory that can be electrically switched
between 2,097,152-word × 16-bit and 4,194,304-word × 8-bit configurations. This device operates on a single
+3.3V power supply, and all inputs and outputs are TTL compatible. Because of its asynchronous operation, it
requires no external clocks, making this device easy-to-use.
The MR27V3202E is suitable as large-capacity fixed memory for microcomputers and data terminals. It is
manufactured using a CMOS double silicon gate technology and is offered in 44-pin SOP or 44-pin TSOP(II)
packages.
FEATURES
∙ 2097,152-word × 16-bit/4,194,304-word × 8-bit electrically switchable configuration
∙ +3.3 V power supply
∙ Access time 90 ns MAX
∙ Operating current 50 mA MAX
∙ Standby current 50 µA MAX
∙ Input/Output TTL compatible
∙ Three-state output
∙ Packages:
44-pin plastic SOP (SOP44-P-600-1.27-K) (Product Name : MR27V3202EMA)
44-pin plastic TSOP (TSOP II 44-P-400-0.80-K) (Product Name : MR27V3202ETP)
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PIN CONFIGURATION (TOP VIEW)
Pin name Functions
D15/A–1 Data output/Address input
A0 to A20 Address input
D0 to D14 Data output
CE Chip enable
OE Output enable
BYTE/V
PP
Mode switch/Program power supply voltage
V
CC
Power supply voltage
V
SS
GND
NC Non connection
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
17
18
19
20
21
22
44
43
42
41
40
39
38
37
36
35
34
33
32
31
30
29
28
27
26
25
24
23
A20
A19
A8
A9
A10
A11
A12
A13
A14
A15
A16
BYTE/V
PP
V
SS
D15/A–1
D7
D14
D6
D13
D5
D12
D4
V
CC
NC
A18
A17
A7
A6
A5
A4
A3
A2
A1
A0
CE
V
SS
OE
D0
D8
D1
D9
D2
D10
D3
D11
44-pin SOP, TSOP(II
)
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BLOCK DIAGRAM
FUNCTION TABLE
Mode CE OE BYTE/V
PP
V
CC
D0 to D7 D8 to D14 D15/A–1
Read (16-Bit) L L H D
OUT
Read (8-Bit) L L L D
OUT
Hi–Z L/H
H
Output disable L H
L
Hi–Z
∗
H
Standby H ∗
L
3.3 V
Hi–Z
∗
Program L H D
IN
Program inhibit H H Hi–Z
Program verify H L
9.75 V 4.0 V
D
OUT
∗
: Don’t Care (H or L)
A0
A1
A2
A3
A4
A5
A6
A7
A8
A9
A10
A11
A12
A13
A14
A15
A16
A17
A18
A19
A20
CE BYTE/V
PP
OE
CE PGMOE
× 8/× 16 Switch
D0 D2 D4 D6 D8 D10 D12 D14
D1 D3 D5 D7 D9 D11 D13 D15
Memory Cell Matrix
2,097,152 × 16-Bit or 4,194,304 × 8-Bit
Multiplexer
Output Buffer
Row Decoder
Column Decoder
Address Buffer
In 8-bit output mode, these pins
are three-stated and pin D15
functions as the A-1 address pin.
A–1
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ABSOLUTE MAXIMUM RATINGS
Parameter Symbol Condition Value Unit
Operating temperature under bias Ta 0 to 70 °C
Storage temperature Tstg
—
–55 to 125 °C
Input voltage V
I
–0.5 to VCC+0.5 V
Output voltage V
O
–0.5 to VCC+0.5 V
Power supply voltage V
CC
–0.5 to 5 V
Program power supply voltage V
PP
relative to V
SS
–0.5 to 11.5 V
Power dissipation per package P
D
—1.0W
RECOMMENDED OPERATING CONDITIONS
(Ta = 0 to 70°C)
Parameter Symbol Condition Min. Typ. Max. Unit
VCC power supply voltage V
CC
3.0 — 3.6 V
VPP power supply voltage V
PP
–0.5 — VCC+0.5 V
Input “H” level V
IH
2.2 — VCC+0.5∗ V
Input “L” level V
IL
VCC = 3.0 to 3.6 V
–0.5∗∗ —0.6V
Voltage is relative to VSS.
∗
: Vcc+1.5V(Max.) when pulse width of overshoot is less than 10ns.
∗∗
: -1.5V(Min.) when pulse width of undershoot is less than 10ns.
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ELECTRICAL CHARACTERISTICS
DC Characteristics
(VCC = 3.3 V ± 0.3 V, Ta = 0 to 70°C)
parameter Symbol Condition Min. Typ. Max. Unit
Input leakage current I
LI
VI = 0 to V
CC
——10µA
Output leakage current I
LO
VO = 0 to V
CC
——10µA
I
CCSC
CE = V
CC
——50µA
VCC power supply current
(Standby)
I
CCST
CE = V
IH
—— 1mΑ
V
CC
power supply current
(Read)
I
CCA
CE = VIL, OE = V
IH
tc = 90 ns
——50mA
VPP power supply current I
PP
VPP = V
CC
——10µA
Input “H” level V
IH
—2.2—V
CC
+0.5∗ V
Input “L” level V
IL
— –0.5∗∗ —0.6V
Output “H” level V
OH
IOH = –2 mA 2.4 — — V
Output “L” level V
OL
IOL = 4 mA — — 0.4 V
Voltage is relative to VSS.
∗
: Vcc+1.5V(Max.) when pulse width of overshoot is less than 10ns.
∗∗
: -1.5V(Min.) when pulse width of undershoot is less than 10ns.
AC Characteristics
(VCC = 3.3 V ± 0.3 V, Ta = 0 to 70°C)
Parameter Symbol Condition Min. Max. Unit
Address cycle time t
C
—90—ns
Address access time t
ACC
CE = OE = V
IL
—90ns
CE access time t
CE
OE = V
IL
—90ns
OE access time t
OE
CE = V
IL
—45ns
t
CHZ
OE = V
IL
030ns
Output disable time
t
OHZ
CE = V
IL
025ns
Output hold time t
OH
CE = OE = V
IL
0—ns
Measurement conditions
Input signal level--------------------------------0 V/3 V
Input timing reference level ------------------0.8 V/2.0 V
Output load---------------------------------------100 pF
Output timing reference level----------------0.8 V/2.0 V
Output
1.73 V
330 Ω
100 pF
(Including scope and jig)
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TIMING CHART (READ CYCLE)
16-Bit Read Mode (
BYTE
BYTEBYTE
BYTE
= VIH)
A0 to A20
CE
OE
D0 to D15
t
C
t
CE
t
OE
t
ACC
t
OH
t
CHZ
t
OHZ
Valid Data
Hi-Z
Hi-Z
8-Bit Read Mode (
BYTE
BYTEBYTE
BYTE
= VIL)
A–1 to A20
CE
OE
D0 to D7
t
C
t
CE
t
OE
t
ACC
t
OH
t
CHZ
t
OHZ
Valid Data
Hi-Z Hi-Z
D8 to D14
Hi-Z
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ELECTRICAL CHARACTERISTICS (PROGRAMMING OPERATION)
DC Characteristics
(Ta = 25°C ± 5°C)
Parameter Symbol Condition Min. Typ. Max. Unit
Input leakage current I
LI
VI = VCC+0.5 V — — 10 µA
VPP power supply current (Program) I
PP2
CE = V
IL
——50mA
VCC power supply current I
CC
———50mA
Input “H” level V
IH
—3.0—V
CC
+0.5 V
Input “L” level V
IL
— –0.5 — 0.8 V
Output “H” level V
OH
IOH = –400 µA2.4 — — V
Output “L” level V
OL
IOL = 2.1 mA — — 0.45 V
Program voltage V
PP
— 9.5 9.75 10.0 V
VCC power supply voltage V
CC
— 3.9 4.0 4.1 V
Voltage is relative to VSS.
AC Characteristics
(VCC = 4.0 V ± 0.1 V, BYTE/VPP = 9.75 V ± 0.25 V, Ta = 25°C ± 5°C)
Parameter Symbol Condition Min. Typ. Max. Unit
Address set-up time t
AS
— 100 — — ns
OE set-up time t
OES
—2——µs
Data set-up time t
DS
— 100 — — ns
Address hold time t
AH
—2——µs
Data hold time t
DH
— 100 — — ns
Output float delay time from OE t
OHZ
— 0 — 100 ns
V
PP
voltage set-up time t
VS
—2——µs
Program pulse width t
PW
— 9 10 11 µs
Data valid from OE t
OE
— — — 100 ns
Address hold from OE high t
AOH
—0——ns
Pin Check Function
Pin Check Function is to check contact between each device-pin and each socket-lead with EPROM programmer.
Setting up address as following condition call the preprogrammed codes on device outputs.
(VCC = 3.3 V ± 0.3 V, CE = VIL, OE = VIL, BYTE/VPP = VIH, Ta = 25°C ± 5°C)
A0 A1 A2 A3 A4 A5 A6 A7 A8 A9
A10 A11 A12 A13 A14 A15 A16 A17 A18 A19 A20
DATA
010101010
VH
∗
01010100110FF00
101010101
VH
∗
1010101100100FF
Other conditions
FFFF
∗: VH = 8 V ± 0.25 V
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Consecutive Programming Waveforms
Consecutive Program Verify Waveforms
t
AS
A0 to A20
CE
OE
D0 to D15
t
AH
t
PW
Din
High
BYTE/Vpp
t
DH
t
DS
t
VS
Din
t
OHZ
t
AHO
t
ACC
A0 to A20
CE
OE
D0 to D15
High
BYTE/Vpp
Dout
t
OE
Dout
9.75 V
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Program and Program Verify Cycle Waveforms
Pin Capacitance
(VCC = 3.3 V, Ta = 25°C, f = 1 MHz)
Parameter Symbol Condition Min. Typ. Max. Unit
Input C
IN1
—— 8
BYTE/V
PP
C
IN2
VI = 0 V
— — 120
Output C
OUT
VO = 0 V — — 10
pF
t
OHZ
t
DS
t
OE
t
AS
A0 to A20
CE
OE
D0 to D15
t
AHO
t
PW
Dout
BYTE/Vpp
t
DH
Din
t
OES
t
OHZ
9.75 V
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Programming/Verify Flow Chart
NG
YES
NO
NO
VCC = 3.0 V/VPP = 3.0 V
Device Passed
Start
Last Address?
X = 0
Verify(One Byte)
Last Address?
NG
X = 2?
X = X+1
Increment Address
Program 10 µs
Programming
Pin Check
NG
PASS
Verify(One Byte)
Verify(One Byte)
Start
Verify
Pin Check
Bad Insertion
Device Passed
YES
YES
PASS
PASS
NG
PASS
NG
PASS
NG
PASS
NO
V
CC
= 3.6 V/VPP = 3.6 V
Device Failed
Bad Insertion
Address = First Location
V
CC
= 4.0 V
V
PP
= 9.75 V
Program 10 µs
Verify(One Byte)
Device Failed
V
CC
= 3.0 V/VPP = 3.0 V
Address = First Location
Increment Address
Address = First Location
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