Datasheet MR27V3202E Datasheet (OKI)

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PEDR27V3202E-01-01

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MR27V3202E

2,097,152–Word ×××× 16–Bit or 4,194,304–Word ×××× 8–Bit One Time PROM

GENERAL DESCRIPTION

The MR27V3202E is a 32 Mbit electrically Programmable Read-Only Memory that can be electrically switched
between 2,097,152-word × 16-bit and 4,194,304-word × 8-bit configurations. This device operates on a single
+3.3V power supply, and all inputs and outputs are TTL compatible. Because of its asynchronous operation, it
requires no external clocks, making this device easy-to-use.
The MR27V3202E is suitable as large-capacity fixed memory for microcomputers and data terminals. It is
manufactured using a CMOS double silicon gate technology and is offered in 44-pin SOP or 44-pin TSOP(II)
packages.

FEATURES

∙ 2097,152-word × 16-bit/4,194,304-word × 8-bit electrically switchable configuration
∙ +3.3 V power supply
∙ Access time 90 ns MAX
∙ Operating current 50 mA MAX
∙ Standby current 50 µA MAX
∙ Input/Output TTL compatible
∙ Three-state output
∙ Packages:

44-pin plastic SOP (SOP44-P-600-1.27-K) (Product Name : MR27V3202EMA)
44-pin plastic TSOP (TSOP II 44-P-400-0.80-K) (Product Name : MR27V3202ETP)

Semiconductor

Preliminary

This version : Dec. 1999
Previous version: ----------

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Semiconductor

PIN CONFIGURATION (TOP VIEW)

PEDR27V3202E-01-01

MR27V3202E

NC
A18
A17

A7
A6
A5
A4
A3
A2
A1
A0

CE

V

OE

D0
D8
D1
D9
D2

D10

D3

D11

1
2
3
4
5
6
7
8

9
10
11
12
13

SS

14
15
16
17
18
19
20
21
22

44
43
42
41
40
39
38
37
36
35
34
33
32
31
30
29
28
27
26
25
24
23

A20
A19
A8
A9
A10
A11
A12
A13
A14
A15
A16
BYTE/V
V

SS

D15/A–1
D7
D14
D6
D13
D5
D12
D4
V

CC

PP

44-pin SOP, TSOP(II

Pin name Functions

D15/A–1 Data output/Address input

A0 to A20 Address input

D0 to D14 Data output

CE Chip enable
OE Output enable

BYTE/V

V

CC

V

SS

PP

Mode switch/Program power supply voltage
Power supply voltage
GND

NC Non connection

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Semiconductor

BLOCK DIAGRAM

PEDR27V3202E-01-01

MR27V3202E

A–1

× 8/× 16 Switch

A1
A2
A3
A4
A5
A6
A7
A8

A9
A10
A11
A12
A13
A14
A15
A16
A17
A18
A19
A20

Address Buffer

CE BYTE/V

OE

CE PGMOE

Memory Cell Matrix

2,097,152 × 16-Bit or 4,194,304 × 8-Bit

Row Decoder

Multiplexer

Output Buffer

Column Decoder

D0 D2 D4 D6 D8 D10 D12 D14

D1 D3 D5 D7 D9 D11 D13 D15

PP

In 8-bit output mode, these pins
are three-stated and pin D15
functions as the A-1 address pin.

FUNCTION TABLE

Mode CE OE BYTE/V

PP

Read (16-Bit) L L H D
Read (8-Bit) L L L D

Output disable L H

Standby H ∗

H

L

H

L
Program L H D
Program inhibit H H Hi–Z

9.75 V 4.0 V

Program verify H L

∗

: Don’t Care (H or L)

V

CC

3.3 V

D0 to D7 D8 to D14 D15/A–1

OUT

Hi–Z L/H
Hi–Z

Hi–Z

D

OUT

∗

∗

IN

OUT

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PEDR27V3202E-01-01

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Semiconductor

MR27V3202E

ABSOLUTE MAXIMUM RATINGS

Parameter Symbol Condition Value Unit
Operating temperature under bias Ta 0 to 70 °C
Storage temperature Tstg
Input voltage V
Output voltage V
Power supply voltage V
Program power supply voltage V
Power dissipation per package P

I

O

CC

PP

D

—

–55 to 125 °C

–0.5 to VCC+0.5 V

relative to V

SS

–0.5 to VCC+0.5 V

–0.5 to 5 V

–0.5 to 11.5 V

—1.0W

RECOMMENDED OPERATING CONDITIONS

(Ta = 0 to 70°C)

Parameter Symbol Condition Min. Typ. Max. Unit
VCC power supply voltage V
VPP power supply voltage V
Input “H” level V
Input “L” level V

CC

PP

IH

IL

VCC = 3.0 to 3.6 V

3.0 — 3.6 V

–0.5 — VCC+0.5 V

2.2 — VCC+0.5∗ V

–0.5∗∗ —0.6V

Voltage is relative to VSS.

∗

: Vcc+1.5V(Max.) when pulse width of overshoot is less than 10ns.

∗∗

: -1.5V(Min.) when pulse width of undershoot is less than 10ns.

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Semiconductor

ELECTRICAL CHARACTERISTICS

DC Characteristics

parameter Symbol Condition Min. Typ. Max. Unit
Input leakage current I
Output leakage current I
VCC power supply current
(Standby)
V

power supply current

CC

(Read)
VPP power supply current I
Input “H” level V
Input “L” level V
Output “H” level V
Output “L” level V

I

CCSC

I

CCST

I

CCA

LI

LO

CE = VIL, OE = V

PP

IH

IL

OH

OL

PEDR27V3202E-01-01

MR27V3202E

(VCC = 3.3 V ± 0.3 V, Ta = 0 to 70°C)

VI = 0 to V

VO = 0 to V

CE = V

CE = V

CC

CC

CC

IH

IH

tc = 90 ns

VPP = V

CC

—2.2—V
— –0.5∗∗ —0.6V

IOH = –2 mA 2.4 — — V

IOL = 4 mA — — 0.4 V

——10µA
——10µA
——50µA
—— 1mΑ

——50mA
——10µA

+0.5∗ V

CC

Voltage is relative to VSS.

∗

: Vcc+1.5V(Max.) when pulse width of overshoot is less than 10ns.

∗∗

: -1.5V(Min.) when pulse width of undershoot is less than 10ns.

AC Characteristics

Parameter Symbol Condition Min. Max. Unit
Address cycle time t
Address access time t

CE access time t
OE access time t

Output disable time
Output hold time t

t
t

C

ACC

CE

OE

CHZ

OHZ

OH

—90—ns

CE = OE = V

OE = V
CE = V
OE = V
CE = V

CE = OE = V

IL

IL

IL

IL

IL

IL

Measurement conditions

Input signal level--------------------------------0 V/3 V

Input timing reference level ------------------0.8 V/2.0 V

Output load---------------------------------------100 pF

Output timing reference level----------------0.8 V/2.0 V

(VCC = 3.3 V ± 0.3 V, Ta = 0 to 70°C)

—90ns
—90ns
—45ns

030ns
025ns
0—ns

Output

1.73 V

330 Ω

100 pF
(Including scope and jig)

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TIMING CHART (READ CYCLE)

PEDR27V3202E-01-01

MR27V3202E

16-Bit Read Mode (

A0 to A20

CE

OE

D0 to D15

8-Bit Read Mode (

BYTE

BYTE

BYTEBYTE

BYTE

BYTE

BYTEBYTE

= VIH)

Hi-Z

= VIL)

t

ACC

t

C

t

t

OH

t

CHZ

OHZ

t

CE

t

OE

Valid Data

Hi-Z

t

C

A–1 to A20

CE

OE

D0 to D7

D8 to D14

t

t

ACC

t

CE

t

OE

t

OHZ

OH

t

CHZ

Valid Data

Hi-Z Hi-Z

Hi-Z

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ELECTRICAL CHARACTERISTICS (PROGRAMMING OPERATION)

DC Characteristics

Parameter Symbol Condition Min. Typ. Max. Unit
Input leakage current I
VPP power supply current (Program) I
VCC power supply current I
Input “H” level V
Input “L” level V
Output “H” level V
Output “L” level V
Program voltage V
VCC power supply voltage V

Voltage is relative to VSS.

LI

PP2

CC

IH

IL

OH

OL

PP

CC

VI = VCC+0.5 V — — 10 µA

CE = V

IL

——50mA
———50mA
—3.0—V
— –0.5 — 0.8 V

IOH = –400 µA2.4 — — V

IOL = 2.1 mA — — 0.45 V

— 9.5 9.75 10.0 V
— 3.9 4.0 4.1 V

PEDR27V3202E-01-01

MR27V3202E

(Ta = 25°C ± 5°C)

+0.5 V

CC

AC Characteristics

(VCC = 4.0 V ± 0.1 V, BYTE/VPP = 9.75 V ± 0.25 V, Ta = 25°C ± 5°C)

Parameter Symbol Condition Min. Typ. Max. Unit
Address set-up time t
OE set-up time t
Data set-up time t
Address hold time t
Data hold time t
Output float delay time from OE t
V

voltage set-up time t

PP

Program pulse width t
Data valid from OE t
Address hold from OE high t

AS

OES

DS

AH

DH

OHZ

VS

PW

OE

AOH

— 100 — — ns
—2——µs
— 100 — — ns
—2——µs
— 100 — — ns
— 0 — 100 ns
—2——µs
— 9 10 11 µs
— — — 100 ns
—0——ns

Pin Check Function

Pin Check Function is to check contact between each device-pin and each socket-lead with EPROM programmer.
Setting up address as following condition call the preprogrammed codes on device outputs.

(VCC = 3.3 V ± 0.3 V, CE = VIL, OE = VIL, BYTE/VPP = VIH, Ta = 25°C ± 5°C)

A0 A1 A2 A3 A4 A5 A6 A7 A8 A9

010101010
101010101

A10 A11 A12 A13 A14 A15 A16 A17 A18 A19 A20

∗

VH

01010100110FF00

∗

VH

1010101100100FF

Other conditions

DATA

FFFF

∗: VH = 8 V ± 0.25 V

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Consecutive Programming Waveforms

A0 to A20

PEDR27V3202E-01-01

MR27V3202E

t

AS

CE

OE

t

DS

D0 to D15

t

VS

BYTE/Vpp

Consecutive Program Verify Waveforms

t

Din

PW

t

AH

High

t

DH

Din

A0 to A20

CE

OE

D0 to D15

BYTE/Vpp

t

ACC

t

OE

High

t

Dout

AHO

t

OHZ

Dout

9.75 V

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Program and Program Verify Cycle Waveforms

A0 to A20

PEDR27V3202E-01-01

MR27V3202E

t

AS

t

AHO

CE

t

PW

t

OES

OE

t

OE

t

OHZ

Dout

D0 to D15

BYTE/Vpp

t

OHZ

t

DS

t

DH

Din

9.75 V

Pin Capacitance

(VCC = 3.3 V, Ta = 25°C, f = 1 MHz)

Parameter Symbol Condition Min. Typ. Max. Unit

Input C

BYTE/V

PP

Output C

IN1

C

IN2

OUT

VI = 0 V

VO = 0 V — — 10

—— 8
— — 120

pF

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Semiconductor

Programming/Verify Flow Chart

PEDR27V3202E-01-01

MR27V3202E

Programming

Bad Insertion

Increment Address

Start

NG

Pin Check

PASS

Address = First Location

= 4.0 V

V

CC

V

= 9.75 V

PP

Program 10 µs

NO

Last Address?

YES

Address = First Location

X = 0

Verify

Start

Pin Check

PASS

Address = First Location

VCC = 3.0 V/VPP = 3.0 V

Verify(One Byte)

PASS

V

= 3.6 V/VPP = 3.6 V

CC

Verify(One Byte)

PASS

Device Passed

NG

Bad Insertion

NG

NG

Device Failed

Increment Address

Verify(One Byte)

NO

Last Address?

V

= 3.0 V/VPP = 3.0 V

CC

Verify(One Byte)

Device Passed

PASS

YES

PASS

NG

NG

Device Failed

X = X+1

YES

X = 2?

NO

Program 10 µs

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