Datasheet MPSA27 Datasheet (Philips)

DISCRETE SEMICONDUCTORS

DATA SH EET

ook, halfpage

M3D186

MPSA26; MPSA27

NPN Darlington transistors

Product specification
Supersedes data of 1997 Apr 17

1999 Apr 27

Philips Semiconductors Product specification

NPN Darlington transistors MPSA26; MPSA27

FEATURES

• High current (max. 500 mA)

• Low voltage (max. 60 V)

• High DC current gain (min. 10000).

PINNING

PIN DESCRIPTION

1 collector
2 base
3 emitter

APPLICATIONS

• High gain amplification.

DESCRIPTION

NPN Darlington transistor in a TO-92; SOT54 plastic
package.

handbook, halfpage

1

2

3

2

MAM252

1

TR1

TR2

3

Fig.1 Simplified outline (TO-92; SOT54)

and symbol.

LIMITING VALUES

In accordance with the Absolute Maximum Rating System (IEC 134).

SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT

V

CBO

collector-base voltage open emitter

MPSA26 − 50 V
MPSA27 − 60 V

V

CES

collector-emitter voltage VBE=0

MPSA26 − 50 V
MPSA27 − 60 V

V

EBO

I

C

I

CM

I

B

P

tot

T

stg

T

j

T

amb

emitter-base voltage open collector − 10 V
collector current (DC) − 500 mA
peak collector current − 1A
base current (DC) − 100 mA
total power dissipation T

≤ 25 °C; note 1 − 500 mW

amb

storage temperature −65 +150 °C
junction temperature − 150 °C
operating ambient temperature −65 +150 °C

Note

1. Transistor mounted on an FR4 printed-circuit board.

1999 Apr 27 2

Philips Semiconductors Product specification

NPN Darlington transistors MPSA26; MPSA27

THERMAL CHARACTERISTICS

SYMBOL PARAMETER CONDITIONS VALUE UNIT

R

th j-a

Note

1. Transistor mounted on an FR4 printed-circuit board.

CHARACTERISTICS

=25°C unless otherwise specified.

T

j

SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT

I

CBO

I

CBO

I

EBO

h

FE

V

CEsat

V

BEsat

V

BEon

f

T

thermal resistance from junction to ambient note 1 250 K/W

collector cut-off current IE= 0; VCB=40V

MPSA26 −−100 nA

collector cut-off current IE= 0; VCB=50V

MPSA27 −−100 nA
emitter cut-off current IC= 0; VEB=10V −−100 nA
DC current gain IC= 10 mA; VCE= 5 V; see Fig.2 10000 −−

I

= 100 mA; VCE= 5 V; see Fig.2 10000 −−

C

collector-emitter saturation voltage IC= 100 mA; IB= 0.1 mA −−1.5 V
base-emitter saturation voltage IC= 100 mA; IB= 0.1 mA −−1.5 V
base-emitter on-state voltage IC= 100 mA; VCE=5V −−2V
transition frequency IC= 30 mA; VCE= 5 V; f = 100 MHz 125 220 − MHz

1999 Apr 27 3

Philips Semiconductors Product specification

NPN Darlington transistors MPSA26; MPSA27

80000

handbook, full pagewidth

h

FE

60000

40000

20000

0

−1

10

VCE=5V.

1

10 10

Fig.2 DC current gain; typical values.

MGD837

2

IC (mA)

3

10

1999 Apr 27 4

Philips Semiconductors Product specification

NPN Darlington transistors MPSA26; MPSA27

PACKAGE OUTLINE

Plastic single-ended leaded (through hole) package; 3 leads SOT54

c

E

d

A L

1

D

2

3

b

1

0 2.5 5 mm

scale

DIMENSIONS (mm are the original dimensions)

UNIT

Note

1. Terminal dimensions within this zone are uncontrolled to allow for flow of plastic and terminal irregularities.

A

5.2

mm

5.0

OUTLINE
VERSION

SOT54 TO-92 SC-43

b

0.48

0.40

b

c

D

d

1

0.66

0.45

0.40

4.8

4.4

0.56

IEC JEDEC EIAJ

E

1.7

4.2

1.4

3.6

REFERENCES

2.54

e

e

1

1.27

L

14.5

12.7

L

1

(1)

L

1

2.5

EUROPEAN

PROJECTION

b

e

1

e

ISSUE DATE

97-02-28

1999 Apr 27 5

Philips Semiconductors Product specification

NPN Darlington transistors MPSA26; MPSA27

DEFINITIONS

Data Sheet Status

Objective specification This data sheet contains target or goal specifications for product development.
Preliminary specification This data sheet contains preliminary data; supplementary data may be published later.
Product specification This data sheet contains final product specifications.

Limiting values

Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or
more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation
of the device at these or at any other conditions above those given in the Characteristics sections of the specification
is not implied. Exposure to limiting values for extended periods may affect device reliability.

Application information

Where application information is given, it is advisory and does not form part of the specification.

LIFE SUPPORT APPLICATIONS

These products are not designed for use in life support appliances, devices, or systems where malfunction of these
products can reasonably be expected to result in personal injury. Philips customers using or selling these products for
use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such
improper use or sale.

1999 Apr 27 6

Philips Semiconductors Product specification

NPN Darlington transistors MPSA26; MPSA27

NOTES

1999 Apr 27 7

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© Philips Electronics N.V. 1999 SCA63
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Printed in The Netherlands 115002/00/03/pp8 Date of release: 1999 Apr 27 Document order number: 9397 750 05423