Page 1
Discrete POWER & Signal
Technologies
MMBTA06MPSA06 PZTA06
MPSA06 / MMBTA06 / PZTA06
C
E
C
B
E
TO-92
SOT-23
Mark: 1G
B
C
C
B
SOT-223
NPN General Purpose Amplifier
This device is designed for general purpose amplifier applications
at collector currents to 300 mA. Sourced from Process 33.
Absolute Maximum Ratings* TA = 25°C unless otherwise noted
Symbol Parameter Value Units
V
CEO
V
CBO
V
EBO
I
C
TJ, T
stg
*These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
NOTES:
1) These ratings are based on a maximum junction temperature of 150 degrees C.
2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.
Collector-Emitter Voltage 80 V
Collector-Base Voltage 80 V
Em i t ter - Bas e V olt ag e 4. 0 V
Collector Current - Continuous 500 mA
Operating and Storage Junction Temperature Range -55 to +150 °C
E
Thermal Characteristics TA = 25°C unless otherwise noted
Symbol Characteristic Max Units
MPSA06 *MMBTA06 **PZTA06
P
D
R
θ
JC
R
θ
JA
*Device mounted on FR-4 PCB 1.6" X 1.6" X 0.06."
**Device mounted on FR-4 PCB 36 mm X 18 mm X 1.5 mm; mounting pad for the collector lead min. 6 cm
1997 Fairchild Semiconductor Corporation
Total Device Dissipation
Derate above 25°C
Thermal Resistance, Junction to Case 83.3 °
Thermal Resistance, Junction to Ambient 200 357 125
625
5.0
350
2.8
2
1,000
8.0
.
mW
mW/°C
C/W
°C/W
Page 2
NPN General Purpose Amplifier
(continued)
Electrical Characteristics TA = 25°C unless otherwise noted
Symbol Parameter Test Conditions Min Max Units
OFF CHARACTERISTICS
V
(BR)CEO
V
(BR)EBO
I
CEO
I
CBO
ON CHARACTERISTICS
h
FE
V
sat
CE(
V
BE(on)
SMALL SIGNAL CHARACTERISTICS
f
T
*Pulse Test: Pulse Width ≤ 300 µs, Duty Cycle ≤ 2.0%
Collector-Emitter Sustaining Voltage* IC = 1.0 m A, IB = 0 80 V
Em i t ter - Bas e B r e akdown Vol tage IE = 100 µA, IC = 0 4.0 V
Collector-Cutoff Current VCE = 60 V, IB = 0 0.1
Collector-Cutoff Current VCB = 80 V, IE = 0 0.1
DC Cu r re n t Ga in IC = 10 mA, VCE = 1.0 V
= 100 mA, VCE = 1.0 V
I
Collector-Emitter Saturation Voltage IC = 100 mA, IB = 10 mA 0. 25 V
)
C
100
100
Base-Emitter On Voltage IC = 100 mA, VCE = 1.0 V 1.2 V
Current Gain - Bandwidth Product IC = 10 mA, VCE = 2.0 V,
100 MHz
f = 10 0 M Hz
µ
A
µ
A
MPSA06 / MMBTA06 / PZTA06
Spice Model
NPN (Is=8.324f Xti=3 Eg=1.11 Vaf=100 Bf=12.16K Ne=1.368 Ise=73.27f Ikf=.1096 Xtb=1.5 Br=11.1 Nc=2 Isc=0
Ikr=0 Rc=.25 Cjc=18.36p Mjc=.3843 Vjc=.75 Fc=.5 Cje=55.61p Mje=.3834 Vje=.75 Tr=72.15n Tf=516.1p Itf=.5
Vtf=4 Xtf=6 Rb=10)
Typical Characteristics
Typical Pulsed Current Gain
vs Collector Curr ent
200
125 °C
150
25 °C
100
- 40 ºC
50
0.001 0.01 0.1
FE
h - TYPICAL PULSED CURRENT GAIN
I - COLLECTOR CURRENT (A)
C
V = 1V
CE
Coll ecto r-Emitte r Satu ra tion
V oltage vs Collector Current
0.5
0.4
0.3
0.2
0.1
0
CESAT
V - COLLECTOR EMITTER VOLTAGE (V)
ββ
= 10
125 °C
25 °C
- 40 ºC
0.1 1 10 100 1000
I - COLLEC TOR CUR RENT (mA)
C
Page 3
Typical Characteristics (continued)
MPSA06 / MMBTA06 / PZTA06
NPN General Purpose Amplifier
(continued)
Base-Emitter Saturation
Voltag e vs Col lector Cur r en t
ββ
= 10
1
0.8
0.6
0.4
BESAT
V - BASE EMITTER VOLTAGE (V)
0.1 1 10 100 1000
- 40 ºC
I - COLLECTOR CURREN T (mA)
C
25 °C
125 °C
Collector-Cutoff Current
vs. Ambient Temperature
10
V = 80 V
CB
1
0.1
0.01
Base Emitter ON Voltage vs
Collector Current
1
0.8
0.6
0.4
0.2
0
1 10 100 1000
BEON
V - BASE EMITTER ON VOLTAGE (V)
I - COLLE CT O R CURRENT (mA)
C
- 40 ºC
25 °C
125 °C
V = 5V
CE
Collector Saturation Region
2
1.5
1
I =
1 mA
0.5
C
10 mA
T = 25°C
A
100 mA
CBO
0.001
I - COLLEC TOR CUR RENT (nA)
25 50 75 100 125
T - AMBIE NT T EMPE RAT URE ( C)
A
º
Collector-Emitter Breakdown
Voltage with Resistance
Between Emitter-Base
117
116
115
114
113
112
111
CER
0.1 1 10 100 1000
BV - BREAKDOWN VOLTAGE (V)
RESISTANCE (k )
ΩΩ
0
CE
4000 10000 20000 30000 50000
V - COLLECTOR-EMITTER VOLTAGE (V)
I - BASE CURRE NT (u A)
B
Inpu t and Outp ut Capacit ance
vs Reverse Voltage
100
10
1
CAPACITANCE (pF)
0.1
0.1 1 10 100
V - COLLECTOR VOLTAGE(V)
CE
C
ib
C
ob
f = 1.0 MHz
Page 4
Typical Characteristics (continued)
MPSA06 / MMBTA06 / PZTA06
NPN General Purpose Amplifier
(continued)
Gain Bandwidth Product
vs Collector Current
400
V = 5V
ce
350
300
250
200
150
100
1 10 20 50 100
T
f - GAIN BANDWIDTH PRODUCT (MHz)
I - COLLECTOR CURRENT (mA)
C
Power Dissipation vs
Ambient Temperature
1
0.75
TO-92
0.5
SOT-23
0.25
D
P - POWER DISSIPA TION (W)
0
0 25 50 75 100 125 150
SOT-223
TEMPERAT URE ( C)
o
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