Datasheet MPSA 06 FAI FAI Datasheet

Page 1
PRODUKTINFORMATION
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ELFA artikelnr 71-033-69 MPSA06 trans
2001-04-04
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MPSA06 / MMBTA06 / PZTA06
C
E
C
B
E
TO-92
SOT-23
Mark: 1G
B
C
C
B
SOT-223
NPN General Purpose Amplifier
This device is designed for general purpose amplifier applications at collector currents to 300 mA. Sourced from Process 33.
Absolute Maximum Ratings* TA = 25°C unless otherwise noted
Symbol Parameter Value Units
V
CEO
V
CBO
V
EBO
I
C
TJ, T
stg
*These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
NOTES:
1) These ratings are based on a maximum junction temperature of 150 degrees C.
2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.
Collector-Emitter Voltage 80 V Collector-Base Voltage 80 V Emitter-Base Voltage 4.0 V Collector Current - Continuous 500 mA Operating and Stora ge Junction Temperature Range -55 to +150
°
C
E
Thermal Characteristics TA = 25°C unless otherwise noted
Symbol Characteristic Max Units
MPSA06 *MMBTA06 **PZTA06
P
D
R
JC
θ
R
JA
θ
*Device mounted on FR-4 PCB 1.6" X 1.6" X 0.06." **Device mounted on FR-4 PCB 36 mm X 18 mm X 1.5 mm; mounting pad for the collector lead min. 6 cm
1997 Fairchild Semiconductor Corporation
Total Device Dissipation
Derate above 25°C
625
5.0
350
2.8
1,000
8.0
Thermal Resistance, Junction to Case 83.3 Thermal Resistance, Junction to Ambient 200 357 125
2
.
mW
mW/°C
C/W
°
C/W
°
Page 3
µ
µ
NPN General Purpose Amplifier
(continued)
Electrical Characteristics TA = 25°C unless otherwise noted
Symbol Parameter Test Conditions Min Max Units
OFF CHARACTERISTICS
V
(BR)CEO
V
(BR)EBO
I
CEO
I
CBO
ON CHARACTERISTICS
h
FE
V
sat
CE(
V
BE(on)
SMALL SIGNAL CHARACTERISTICS
f
T
*Pulse T est: Pulse Width ≤ 300 µs, Duty Cycle 2.0%
Collector-Emitter Sustaining Voltage* IC = 1.0 mA, IB = 0 80 V Emitter-Base Breakdown Voltage
= 100 µA, IC = 0
I
E
4.0 V Collector-Cutoff Current VCE = 60 V, IB = 0 0.1 Collector-Cutoff Current VCB = 80 V, IE = 0 0.1
DC Current Gain IC = 10 mA, VCE = 1.0 V
I
= 100 mA, VCE = 1.0 V
Collector-Emitter Saturation Voltage IC = 100 mA, IB = 10 mA 0.25 V
)
C
100 100
Base-Emitter On Voltag e IC = 100 mA, VCE = 1.0 V 1.2 V
Current Gain - Bandwidth Product IC = 10 mA, VCE = 2.0 V,
100 MHz
f = 100 MHz
A A
MPSA06 / MMBTA06 / PZTA06
Spice Model
NPN (Is=8.324f Xti=3 Eg=1.11 Vaf=100 Bf=12.16K Ne=1.368 Ise=73.27f Ikf=.1096 Xtb=1.5 Br=11.1 Nc=2 Isc=0 Ikr=0 Rc=.25 Cjc=18.36p Mjc=.3843 Vjc=.75 Fc=.5 Cje=55.61p Mje=.3834 Vje=.75 Tr=72.15n Tf=516.1p Itf=.5 Vtf=4 Xtf=6 Rb=10)
T ypical Characteristics
Typica l P uls ed Current G a in
vs Collector Current
200
150
100
50
FE
0.0 01 0.01 0.1
h - TYPICAL PUL SED CURRENT G AI N
125 °C
25 °C
- 40 °C
I - CO LLE C TOR CU RR ENT (A)
C
V = 1V
CE
Co llecto r -Emitter Sa turati o n Voltag e vs Coll ector Cur rent
0.5
0.4
0.3
0.2
0.1
0
0.1 1 10 100 100 0
CE SAT
V - COLLEC TOR EMI TTE R VO LTAGE ( V)
= 10
β
25 °C
I - COLLECTOR CURRENT (mA)
C
125 °C
- 40 °C
3
Page 4
Typical Characteristics (continued)
MPSA06 / MMBTA06 / PZTA06
NPN General Purpose Amplifier
(continued)
Base-Em itter Saturati o n
Voltage vs C o llector Current
= 10
β
1
0.8
0.6
0.4
BESAT
V - BA SE EM ITTER VOLTAGE (V)
0.1 1 10 100 1000
- 40 °C
25 °C
125 °C
I - COLLEC TOR CURRENT (mA)
C
Collector -Cutoff Current vs Amb ient Temp erature
10
V = 80 V
CB
1
0.1
0.01
Base Emitter ON Voltage vs
Collector Cur rent
1
0.8
0.6
0.4
0.2
0
BEON
1 10 100 1000
V - BASE EMITTER ON VOLTAGE (V)
- 40 °C
25 °C
125 °C
V = 5V
CE
I - COLLECTOR CURRENT (mA)
C
Collector Saturation Region
2
1.5
1
I =
1 mA
0.5
C
10 mA
T = 25°C
A
100 mA
CBO
I - COLLECTOR CURRENT (nA)
0.001 25 50 75 100 125
T - AMBIE NT TEMPERATURE ( C)
A
°
Col lecto r-E m itter Br eakdow n
Voltage with Resistance
Between Emitter-Base
117
116
115
114
113
112
CER
111
0.1 1 10 100 1000
BV - BREAKDOWN VOLTAGE (V)
RESISTANCE (k )
0
CE
4000 10000 20000 30000 50000
V - COLLECTOR-EMITTER VOLTAGE (V)
I - BASE CURRENT (uA)
B
Input and Output Ca pacitance
vs Reverse Voltage
100
10
1
CAP ACITANCE (pF)
0.1
0.1 1 10 100
V - CO LL ECTOR VO LTAGE (V )
CE
f = 1.0 MHz
C
ib
C
ob
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Typical Characteristics (continued)
MPSA06 / MMBTA06 / PZTA06
NPN General Purpose Amplifier
(continued)
Gain Bandwidth Product
vs Collector Cur rent
400
V = 5 V
CE
350
300
250
200
150
100
T
1102050100
f - GAIN BANDWIDTH PRODUCT ( MHz)
I - CO LLECTOR CURRENT (mA)
C
Power Dissipation vs
Ambient Temperature
1
0.75
TO-92
0.5
SOT-23
0.25
D
P - POWER DISSIPATION (W)
0
0 25 50 75 100 125 150
SOT-223
TEMPERATURE ( C)
o
3
Page 6
TO-92 Package Dimensions
TO-92 (FS PKG Code 92, 94, 96)
1:1
Scale 1:1 on letter size paper
Dimensions shown below are in:
inches [millimeters]
Part Weight per unit (gram): 0.1977
©2000 Fairchild Semiconductor International
January 2000, Rev. B
Page 7
TRADEMARKS
The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks.
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FACT™ FACT Quiet Series™
FAST
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PowerTrench
QFET™ QS™ QT Optoelectronics™
Quiet Series™ SILENT SWITCHER SMART ST ART™ SuperSOT™-3 SuperSOT™-6 SuperSOT™-8
SyncFET™ TinyLogic™ UHC™ VCX™
DISCLAIMER
FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN T O IMPROVE RELIABILITY , FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICA TION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.
LIFE SUPPORT POLICY
FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORA TION. As used herein:
1. Life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body, or (b) support or sustain life, or (c) whose failure to perform when properly used in accordance with instructions for use provided in the labeling, can be reasonably expected to result in significant injury to the user.
2. A critical component is any component of a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or
effectiveness.
PRODUCT STA TUS DEFINITIONS Definition of Terms
Datasheet Identification Product Status Definition
Advance Information
Preliminary
No Identification Needed
Obsolete
Formative or In Design
First Production
Full Production
Not In Production
This datasheet contains the design specifications for product development. Specifications may change in any manner without notice.
This datasheet contains preliminary data, and supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design.
This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design.
This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only.
Rev. G
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