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MPS6543
MPS6543
Discrete POWER & Signal
Technologies
C
E
B
TO-92
NPN RF Transistor
This device is designed for use as RF amplifiers, oscillators and
multipliers with collector currents in the 100 µA to 10 mA range.
Sourced from Process 47. See MPSH11 for characteristics.
Absolute Maximum Ratings* TA = 25°C unless otherwise noted
Symbol Parameter Value Units
V
CEO
V
CBO
V
EBO
I
C
TJ, T
stg
*These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
NOTES:
1) These ratings are based on a maximum junction temperature of 150 degrees C.
2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.
Thermal Characteristics TA = 25°C unless otherwise noted
Collector-Emitter Voltage 25 V
Collector-Base Voltage 35 V
Em i t ter - Bas e V olt ag e 3. 0 V
Collector Current - Continuous 50 mA
Operating and Storage Junction Temperature Range -55 to +150
°C
Symbol Characteri st ic Max Un i ts
MPS6543
P
D
R
θ
JC
R
θ
JA
1997 Fairchild Semiconductor Corporation
Total De vice Dissipat i on
Derate above 25°C
Thermal Resistance, Junction to Case 125
Thermal Resistance, Junction to Ambient 357 °C/W
350
2.8
mW
mW/°C
°C/W
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NPN RF Transistor
(continued)
Electrical Characteristics TA = 25°C unless otherwise noted
Symbol Parameter Test Conditions Min Max Units
OFF CHARACTERISTICS
V
(BR)CEO
V
(BR)CBO
V
(BR)EBO
I
CBO
I
EBO
ON CHARACTERISTICS*
h
FE
V
sat
CE(
V
BE(on)
SMALL SIGNAL CHARACTERISTICS
f
T
C
ob
rb’C
C
Collector-Emitter Breakdown Voltage* IC = 1.0 mA, IB = 0 25 V
Collector-Base Breakdown Voltage IC = 100 µA, IE = 0 35 V
Em i t ter - Bas e B reakdown Volt ag e
= 100 µA, IC = 0
I
E
3.0 V
Collector Cutoff Current VCB = 25 V, IE = 0 0.1
Emitter Cuto ff Current VEB = 2.0 V, IC = 0 1.0
DC Cu r ren t Gain VCE = 10 V, IC = 4.0 mA 25
Collector-Emitter Saturation Voltage IC = 10 mA, IB = 1.0 mA 0.35 V
)
Base-Emitter On Voltage IC = 10 mA, IB = 1.0 mA 0.95 V
Current Gain - Bandwidth Product IC = 4.0 mA, VCE = 10 V,
750 MHz
f =100 MHz
Output Capacitance VCB = 10 V, IE = 0, f = 1.0 MHz 1.0 pF
Coll ect or- Base Time Co nst ant IE = 4.0 mA, VCE = 10 V,
f = 31.8 MHz
µ
µ
9.5 pS
A
A
MPS6543
*Pulse Test: Pulse Width ≤ 300 µs, Duty Cycle ≤ 2.0%
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