Datasheet MPS2907A Datasheet (ON Semiconductor)

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MPS2907A

Preferred Device

General Purpose
Transistors

PNP Silicon

MAXIMUM RATINGS

Rating Symbol Value Unit

Collector–Emitter Voltage V
Collector–Base Voltage V
Emitter–Base Voltage V
Collector Current – Continuous I
Total Device Dissipation

@ TA = 25°C
Derate above 25°C

Total Device Dissipation

@ TC = 25°C
Derate above 25°C

Operating and Storage Junction

Temperature Range

THERMAL CHARACTERISTICS

Characteristic Symbol Max Unit

Thermal Resistance,

Junction to Ambient

Thermal Resistance,

Junction to Case

CEO
CBO
EBO

P

P

TJ, T

R

θJA

R

θJC

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COLLECTOR

3

–60 Vdc
–60 Vdc

–5.0 Vdc

C

D

D

stg

–600 mAdc

625

5.0

1.5
12

–55 to

+150

200 °C/W

83.3 °C/W

mW

mW/°C

Watts

mW/°C

°C

2

BASE

EMITTER

STYLE 1

1
2

3

STYLES 1, 14

MARKING DIAGRAMS

MPS2
907A
YWW

Y = Year
WW = Work Week

1

TO–92

CASE 29

 Semiconductor Components Industries, LLC, 2001

October, 2001 – Rev. 0

ORDERING INFORMATION

Device Package Shipping

MPS2907A TO–92 5000 Units/Box
MPS2907ARLRA TO–92 2000/Tape & Reel
MPS2907ARLRE TO–92 2000/Ammo Pack
MPS2907ARLRM TO–92 2000/Ammo Pack
MPS2907ARLRP TO–92 2000/Ammo Pack

Preferred devices are recommended choices for future use
and best overall value.

1 Publication Order Number:

MPS2907A/D

MPS2907A

CC C

CC C

ELECTRICAL CHARACTERISTICS (T

Characteristic Symbol Min Max Unit

= 25°C unless otherwise noted)

A

OFF CHARACTERISTICS

Collector–Emitter Breakdown Voltage (Note 1.)

(IC = –10 mAdc, IB = 0)

Collector–Base Breakdown Voltage

(IC = –10 Adc, IE = 0)

Emitter–Base Breakdown Voltage

(IE = –10 Adc, IC = 0)

Collector Cutoff Current

(VCE = –30 Vdc, V

Collector Cutoff Current

(VCB = –50 Vdc, IE = 0)
(VCB = –50 Vdc, IE = 0, TA = 150°C)

Base Current

(VCE = –30 Vdc, V

EB(off)

EB(off)

= –0.5 Vdc)

= –0.5 Vdc)

ON CHARACTERISTICS

DC Current Gain

(IC = –0.1 mAdc, VCE = –10 Vdc)
(IC = –1.0 mAdc, VCE = –10 Vdc)
(IC = –10 mAdc, VCE = –10 Vdc)
(IC = –150 mAdc, VCE = –10 Vdc) (Note 1.)
(IC = –500 mAdc, VCE = –10 Vdc) (Note 1.)

Collector–Emitter Saturation Voltage (Note 1.)

(IC = –150 mAdc, IB = –15 mAdc)
(IC = –500 mAdc, IB = –50 mAdc)

Base–Emitter Saturation Voltage (Note 1.)

(IC = –150 mAdc, IB = –15 mAdc)
(IC = –500 mAdc, IB = –50 mAdc)

SMALL–SIGNAL CHARACTERISTICS

Current–Gain – Bandwidth Product (Notes 1. and 2.),

(IC = –50 mAdc, VCE = –20 Vdc, f = 100 MHz)

Output Capacitance

(VCB = –10 Vdc, IE = 0, f = 1.0 MHz)

Input Capacitance

(VEB = –2.0 Vdc, IC = 0, f = 1.0 MHz)

SWITCHING CHARACTERISTICS

Turn–On T ime
Delay Time
Rise Time t
Turn–Off Time
Storage Time
Fall Time t

1. Pulse Test: Pulse Width  300 s, Duty Cycle  2%.

2. fT is defined as the frequency at which |hfe| extrapolates to unity.

(VCC = –30 Vdc, IC = –150 mAdc,
IB1 = –15 mAdc) (Figures 1 and 5)

(VCC = –6.0 Vdc, IC = –150 mAdc,
IB1 = IB2 = 15 mAdc) (Figure 2)

V

(BR)CEO

V

(BR)CBO

V

(BR)EBO

I

CEX

I

CBO

I

B

h

FE

V

CE(sat)

V

BE(sat)

f

T

C

obo

C

ibo

t

on
t

d

r

t

off
t

s

f

–60 –
–60 – Vdc

–5.0 – Vdc

– –50 nAdc

–
–

– –50 nAdc

75
100
100
100

50

–
–

–
–

200 – MHz

– 8.0 pF

– 30 pF

– 45 ns
– 10 ns
– 40 ns
– 100 ns
– 80 ns
– 30 ns

–0.01

–10

–
–
–

300

–

–0.4
–1.6

–1.3
–2.6

Vdc

µAdc

–

Vdc

Vdc

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2

MPS2907A

INPUT
Z

= 50 Ω

o

PRF = 150 PPS
RISE TIME ≤ 2.0 ns
P.W. < 200 ns

0

-16 V

200 ns

-30 V

200

1.0 k

50

TO OSCILLOSCOPE
RISE TIME ≤ 5.0 ns

INPUT
Z

= 50 Ω

o

PRF = 150 PPS
RISE TIME ≤ 2.0 ns
P.W. < 200 ns

0

-30 V

200 ns

+15 V -6.0 V

1.0 k

50

1.0 k 37

TO OSCILLOSCOPE
RISE TIME ≤ 5.0 ns

1N916

Figure 1. Delay and Rise Time Test Circuit Figure 2. Storage and Fall Time Test Circuit

TYPICAL CHARACTERISTICS

3.0

2.0

1.0

0.7

0.5

, NORMALIZED CURRENT GAIN

FE

0.3

h

VCE = -1.0 V
VCE = -10 V

T

= 125°C

J

25°C

-55°C

V , COLLECTOR-EMITTER VOLTAGE (VOLTS)

CE

0.2

-1.0

-0.8

-0.6

-0.4

-0.2

-0.005

-0.1

0

-0.2 -0.3 -0.5 -0.7 -1.0 -2.0 -3.0 -5.0 -7.0 -10 -20 -30 -50 -70 -100 -200 -300 -500

IC, COLLECTOR CURRENT (mA)

Figure 3. DC Current Gain

IC = -1.0 mA

-0.01

-10 mA

-0.02 -0.03 -0.05 -0.07 -0.1 -0.2 -0.3 -0.5 -0.7 -1.0

IB, BASE CURRENT (mA)

-100 mA

-2.0

-3.0

-5.0 -7.0 -10 -20

-500 mA

-30

Figure 4. Collector Saturation Region

-50

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3

MPS2907A

TYPICAL CHARACTERISTICS

300
200

t

100

70
50

30

20

t, TIME (ns)

td @ V

10

7.0

5.0

3.0

-5.0

-7.0 -10 -20 -30 -50 -70 -100 -200 -300 -500

r

= 0 V

BE(off)

IC, COLLECTOR CURRENT

VCC = -30 V
IC/IB = 10
T

J

Figure 5. Turn–On Time

TYPICAL SMALL–SIGNAL CHARACTERISTICS

= 25°C

t, TIME (ns)

2.0 V

NOISE FIGURE

VCE = 10 Vdc, TA = 25°C

500

300

200

100

70
50

30

20

10

7.0

5.0

-7.0 -10 -20 -30 -50 -70 -100 -200 -300 -500

-5.0

t

f

t′

= ts - 1/8 t

s

IC, COLLECTOR CURRENT (mA)

f

VCC = -30 V
IC/IB = 10
IB1 = I
T

= 25°C

J

Figure 6. Turn–Off Time

B2

10

8.0

6.0

4.0

NF, NOISE FIGURE (dB)

2.0

0

0.01

0.02 0.05 0.1 0.2 0.5 1.0 2.0 5.0 10 20 50 100

IC = -1.0 mA, R

-500 µA, Rs = 560 Ω

-50 µA, Rs = 2.7 kΩ

-100 µA, Rs = 1.6 kΩ

f, FREQUENCY (kHz)

= 430 Ω

s

Rs = OPTIMUM SOURCE RESISTANCE

Figure 7. Frequency Effects

10

f = 1.0 kHz

8.0

6.0

4.0

NF, NOISE FIGURE (dB)

2.0

0

50 100 200 500 1.0 k 2.0 k 5.0 k 10 k 20 k 50 k

I

= -50 µA

C

-100 µA

-500 µA

-1.0 mA

Rs, SOURCE RESISTANCE (OHMS)

Figure 8. Source Resistance Effects

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MPS2907A

)

TYPICAL SMALL–SIGNAL CHARACTERISTICS

NOISE FIGURE

VCE = 10 Vdc, TA = 25°C

30

20

10

7.0

5.0

C, CAPACITANCE (pF)

3.0

2.0

-0.1

-1.0

-0.8

-0.6

-0.4

V, VOLTAGE (VOLTS)

-0.2

0

-0.1 -0.2 -0.5

-0.2

T

J

C

eb

-0.3

-1.0 -2.0 -3.0 -5.0 -10 -20 -30

-0.5

REVERSE VOLTAGE (VOLTS)

Figure 9. Capacitances

= 25°C

V

@ IC/IB = 10

BE(sat)

V

@ VCE = -10 V

BE(on)

V

@ IC/IB = 10

CE(sat)

-1.0 -2.0 -5.0 -10 -20 -50 -100 -200 -500

IC, COLLECTOR CURRENT (mA)

400

300

200

100

80

C

cb

60

40

30

20

, CURRENT-GAIN  BANDWIDTH PRODUCT (MHz

T

f

-1.0 -2.0 -5.0 -10 -20 -50 -100 -200 -500 -1000

VCE = -20 V
T

= 25°C

J

IC, COLLECTOR CURRENT (mA)

Figure 10. Current–Gain — Bandwidth Product

+0.5

0

-0.5

-1.0

-1.5

COEFFICIENT (mV/ °C)

-2.0

-2.5

-0.1 -0.2 -0.5

R

for V

VC

CE(sat)

R

for V

VB

BE

-1.0 -2.0 -5.0 -10 -20 -50 -100 -200 -500

IC, COLLECTOR CURRENT (mA)

Figure 11. “On” Voltage

Figure 12. Temperature Coefficients

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SEATING
PLANE

MPS2907A

PACKAGE DIMENSIONS

TO–92

TO–226AA

CASE 29–11

A

R

XX

G

H

V

1

N

B

P

L

K

D

J

C

SECTION X–X

N

ISSUE AL

NOTES:

1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.

2. CONTROLLING DIMENSION: INCH.

3. CONTOUR OF PACKAGE BEYOND DIMENSION R
IS UNCONTROLLED.

4. LEAD DIMENSION IS UNCONTROLLED IN P AND
BEYOND DIMENSION K MINIMUM.

DIM MIN MAX MIN MAX

A 0.175 0.205 4.45 5.20
B 0.170 0.210 4.32 5.33
C 0.125 0.165 3.18 4.19
D 0.016 0.021 0.407 0.533
G 0.045 0.055 1.15 1.39
H 0.095 0.105 2.42 2.66
J 0.015 0.020 0.39 0.50
K 0.500 --- 12.70 ---
L 0.250 --- 6.35 ---
N 0.080 0.105 2.04 2.66
P --- 0.100 --- 2.54
R 0.115 --- 2.93 ---
V 0.135 --- 3.43 ---

STYLE 1:

PIN 1. EMITTER

2. BASE

3. COLLECTOR

MILLIMETERSINCHES

STYLE 14:

PIN 1. EMITTER

2. COLLECTOR

3. BASE

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Notes

MPS2907A

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7

MPS2907A

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without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular
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MPS2907A/D

8