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DUAL CHANNEL PHOTOTRANSISTOR
SMALL OUTLINE SURFACE MOUNT
DESCRIPTION
The MOCD211-M device consists of two gallium arsenide infrared emitting diodes optically coupled to
two monolithic silicon phototransistor detectors, in a surface mountable, small outline plastic package. It
is ideally suited for high density applications and eliminates the need for through-the-board mounting.
FEATURES
•U.L. Recognized (File #E90700, Volume 2)
• VDE Recognized (File #136616) (add option “V” for VDE approval, i.e, MOCD211V-M)
• Minimum BV
• Standard SOIC-8 Footprint, with 0.050" Lead Spacing
• Compatible with Dual Wave, Vapor Phase and IR Reflow Soldering
• High Input-Output Isolation of 2500 V
• Compact Dual Channel Optocoupler
of 30 Volts Guaranteed
CEO
AC(rms)
Guaranteed
OPTOCOUPLERS
MOCD211-M
ANODE 1
CATHODE 1
1
2
8
COLLECTOR 1
EMITTER 1
7
3
APPLICATIONS
• Interfacing and coupling systems of different potentials and impedances
ANODE 2
CATHODE 2
4
• General purpose switching circuits
• Monitor and detection circuits
ABSOLUTE MAXIMUM RATINGS
(T
= 25°C Unless otherwise specified)
A
Rating Symbol Value Unit
EMITTER
Forward Current - Continuous I
Forward Current - Peak (PW = 100 µs, 120 pps) I
Reverse Voltage V
LED Power Dissipation @ T
= 25°C
A
Derate above 25°C 0.8 mW/°C
F
(pk) 1.0 A
F
R
P
D
60 mA
6.0 V
90 mW
DETECTOR
Collector-Emitter Voltage V
Emitter-Collector Voltage V
Collector Current-Continuous I
Detector Power Dissipation @ T
= 25°C
A
Derate above 25°C 1.76 mW/°C
CEO
ECO
C
P
D
30 V
7.0 V
150 mA
150 mW
TOTAL DEVICE
Input-Output Isolation Voltage
(f = 60 Hz, 1 min. Duration)
Total Device Power Dissipation @ T
Derate above 25°C 2.94 mW/°C
Ambient Operating Temperature Range T
Storage Temperature Range T
(1,2,3)
= 25°C
A
V
ISO
P
D
A
stg
2500 Vac(rms)
250 mW
-40 to +100 °C
-40 to +125 °C
6
COLLECTOR 2
5
EMITTER 2
© 2003 Fairchild Semiconductor Corporation
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DUAL CHANNEL PHOTOTRANSISTOR
SMALL OUTLINE SURFACE MOUNT
OPTOCOUPLERS
MOCD211-M
ELECTRICAL CHARACTERISTICS
(T
= 25°C unless otherwise specified)
A
Parameter Test Conditions Symbol Min Typ** Max Unit
EMITTER
Input Forward Voltage I
Reverse Leakage Current V
= 10 mA V
F
= 6.0 V I
R
F
R
— 1.15 1.5 V
— 0.001 100 µA
Capacitance C — 18 — pF
DETECTOR
= 10 V, T
V
Collector-Emitter Dark Current
CE
V
CE
= 10 V, T
Collector-Emitter Breakdown Voltage I
Emitter-Collector Breakdown Voltage I
Collector-Emitter Capacitance f = 1.0 MHz, V
= 25°C I
A
= 100°C I
A
= 100 µA BV
C
= 100 µA BV
E
= 0 V C
CE
CEO1
CEO2
CEO
ECO
CE
— 1.0 50 nA
— 1.0 — µA
30 100 — V
7.0 10 — V
— 7.0 — pF
COUPLED
Current Transfer Ratio
Collector-Emitter Saturation Voltage I
Tu r n-On Time
Tu r n-Off Time
Rise Time
Fall Time
Isolation Surge Voltage
Isolation Resistance
Isolation Capacitance
(4)
I
(1,2,3)
(2)
(2)
= 10 mA, V
F
= 2.0 mA, I
C
I
= 2.0 mA, V
C
R
L
I
= 2.0 mA, V
C
R
L
I
= 2.0 mA, V
C
R
L
= 2.0 mA, V
I
C
R
L
= 100 Ω (fig 6.)
= 100 Ω (fig 6.)
= 100 Ω (fig 6.)
= 100 Ω (fig 6.)
= 10 V CTR 20 — — %
CE
= 10 mA V
F
= 10 V,
CC
= 10 V,
CC
= 10 V,
CC
= 10 V,
CC
f = 60 Hz, t = 1 min. V
V
= 500 V R
I-O
V
= 0 V, f = 1 MHz C
I-O
CE (sat)
t
on
t
off
t
r
t
f
ISO
ISO
ISO
——0.4 V
— 7.5 — µs
— 5.7 — µs
— 3.2 — µs
— 4.7 — µs
2500 — — Vac(rms)
11
10
—— Ω
— 0.2 — pF
** Typical values at T
= 25°C
A
NOTE:
1. Input-Output Isolation Voltage, V
, is an internal device dielectric breakdown rating.
ISO
2. For this test, Pins 1, 2, 3 and 4 are common and Pins 5, 6, 7 and 8 are common.
3. V
rating of 2500 V
ISO
4. Current Transfer Ratio (CTR) = I
© 2003 Fairchild Semiconductor Corporation
for t = 1 min. is equivalent to a rating of 3,000 V
AC(rms)
/I
x 100%.
C
F
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AC(rms)
for t = 1 sec.
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DUAL CHANNEL PHOTOTRANSISTOR
SMALL OUTLINE SURFACE MOUNT
OPTOCOUPLERS
MOCD211-M
Fig. 1 LED Forward Voltage vs. Forward Current
1.8
1.7
1.6
1.5
1.4
1.3
1.2
- FORWARD VOLTAGE (V)
F
V
1.1
1.0
11 0100
TA = -55° C
TA = 25° C
TA = 100° C
IF - LED FORWARD CURRENT (mA)
Fig. 3 Output Current vs. Ambient Temperature
10
1
Fig. 2 Output Curent vs. Input Current
10
VCE = 5V
NOR MALIZE D TO I
1
0.1
- OUTPU T COL LECT OR CURRENT (NORMALIZED)
C
I
0.01
0.1 1 1 0 100
= 10 mA
F
IF - LED INPUT CURRENT (mA)
Fig. 4 Output Current vs. Collector - Emitter Voltage
1.6
1.4
1.2
1.0
0.8
- OUTPU T COL LECT OR CU RRENT ( NOR MAL IZE D)
C
I
NORMALIZED TO TA = 25oC
0.1
-80 -60 -40 -2 0 0 204 06 08 01 0 01 2 0
TA - AMBIENT TEMPERATURE (oC)
Fig. 5 Dark Current vs. Ambient Temperature
10000
VCE=10V
1000
100
10
1
- COLLE CTOR -E MIT TER DA RK CU RRENT (nA)
CEO
I
0.1
02 04 06 08 01 0 0
TA - AMBIENT TEMPERATURE (oC)
0.6
0.4
0.2
- OUTPUT COLLECTOR CURRE NT (N ORMAL IZED)
C
0.0
I
01234567891 0
VCE - COLLECTOR -EMITTER VOLTAGE (V)
IF = 10 mA
NORM ALIZE D TO V
= 5V
CE
© 2003 Fairchild Semiconductor Corporation
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DUAL CHANNEL PHOTOTRANSISTOR
SMALL OUTLINE SURFACE MOUNT
OPTOCOUPLERS
TEST CIRCUIT WAVE FORMS
V
= 10V
CC
I
I
F
C
R
L
MOCD211-M
INPUT PULSE
INPUT
OUTPUT
Adjust
I
F to produce IC = 2 mA
10%
90%
t
r
t
on
Figure 6. Switching Time Test Circuit and Waveforms
OUTPUT PULSE
t
f
t
off
© 2003 Fairchild Semiconductor Corporation
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DUAL CHANNEL PHOTOTRANSISTOR
SMALL OUTLINE SURFACE MOUNT
OPTOCOUPLERS
MOCD211-M
Package Dimensions (Surface Mount) 8-Pin Small Outline
PIN 1
ID.
0.202 (5.13)
SEATING PLANE
0.143 (3.63)
0.123 (3.13)
0.021 (0.53)
0.011 (0.28)
Lead Coplanarity : 0.004 (0.10) MAX
0.182 (4.63)
0.164 (4.16)
0.144 (3.66)
0.008 (0.20)
0.003 (0.08)
0.050 (1.27)
TYP
0.244 (6.19)
0.224 (5.69)
0.010 (0.25)
0.006 (0.16)
0.024 (0.61)
0.060 (1.52)
0.275 (6.99)
0.155 (3.94)
0.050 (1.27)
© 2003 Fairchild Semiconductor Corporation
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ORDERING INFORMATION
Option Order Entry Identifier Description
VV VDE 0884
R1 R1 Tape and reel (500 units per reel)
R1V R1V VDE 0884, Tape and reel (500 units per reel)
R2 R2 Tape and reel (2500 units per reel)
R2V R2V VDE 0884, Tape and reel (2500 units per reel)
MARKING INFORMATION
DUAL CHANNEL PHOTOTRANSISTOR
SMALL OUTLINE SURFACE MOUNT
OPTOCOUPLERS
MOCD211-M
1
D211
4 3
Definitions
1F airchild logo
2D e vice number
VDE mark (Note: Only appears on parts ordered with VDE
3
option – See order entry table)
4 One digit year code, e.g., ‘3’
5T wo digit work week ranging from ‘01’ to ‘53’
6 Assembly package code
5
2
S YY X V
6
© 2003 Fairchild Semiconductor Corporation
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Carrier Tape Specifications
3.50 ± 0.20
8.3 ± 0.10
0.30 MAX
DUAL CHANNEL PHOTOTRANSISTOR
SMALL OUTLINE SURFACE MOUNT
OPTOCOUPLERS
MOCD211-M
8.0 ± 0.10
2.0 ± 0.05
4.0 ± 0.10
Ø1.5 MIN
1.75 ± 0.10
5.5 ± 0.05
12.0 ± 0.3
5.20 ± 0.20
Reflow Profile
300
250
200
150
100
Temperature (° C)
50
0
0
0.1 MAX
User Direction of Feed
230° C, 10–30 s
245° C peak
Time above 183° C, 120–180 sec
Ramp up = 2–10° C/sec
0.5 1 1.5 2 2.5 3 3.5 4 4.5
Time (Minute)
6.40 ± 0.20
Ø1.5 ± 0.1/-0
• Peak reflow temperature: 245° C (package surface temperature)
• Time of temperature higher than 183° C for 120–180 seconds
• One time soldering reflow is recommended
© 2003 Fairchild Semiconductor Corporation
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DUAL CHANNEL PHOTOTRANSISTOR
SMALL OUTLINE SURFACE MOUNT
OPTOCOUPLERS
MOCD211-M
DISCLAIMER
FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO
ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME
ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN;
NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.
LIFE SUPPORT POLICY
FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES
OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF THE PRESIDENT OF FAIRCHILD SEMICONDUCTOR
CORPORATION. As used herein:
1. Life support devices or systems are devices or systems
which, (a) are intended for surgical implant into the body, or
(b) support or sustain life, and (c) whose failure to perform
when properly used in accordance with instructions for use
provided in the labeling, can be reasonably expected to
result in a significant injury of the user.
2. A critical component in any component of a life support
device or system whose failure to perform can be
reasonably expected to cause the failure of the life support
device or system, or to affect its safety or effectiveness.
© 2003 Fairchild Semiconductor Corporation
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