Page 1
LESHAN RADIO COMPANY, LTD.
VHF/UHF Transistors
NPN Silicon
3
COLLECTOR
1
BASE
2
EMITTER
MAXIMUM RATINGS
Rating Symbol Value Unit
Collector–Emitter Voltage V
Collector–Base Voltage V
Emitter–Base Voltage V
CEO
CBO
EBO
THERMAL CHARACTERISTICS
Characteristic Symbol Max Unit
Total Device Dissipation FR– 5 Board, (1)
TA = 25°C
Derate above 25°C
Thermal Resistance, Junction to Ambient R
T otal Device Dissipation
Alumina Substrate, (2) TA = 25°C
Derate above 25°C
Thermal Resistance, Junction to Ambient R
Junction and Storage T emperature TJ , T
25 Vdc
30 Vdc
3.0 Vdc
P
D
θJA
P
D
θJA
stg
225 mW
1.8 mW/°C
556 °C/W
300 mW
2.4 mW/°C
417 °C/W
–55 to +150 °C
MMBTH10LT1
3
1
2
CASE 318–08, STYLE 6
SOT–23 (TO–236AB)
DEVICE MARKING
MMBTH10LT1 = 3EM
ELECTRICAL CHARACTERISTICS (T
= 25°C unless otherwise noted.)
A
Characteristic Symbol Min Typ Max Unit
OFF CHARACTERISTICS
Collector–Emitter Breakdown Voltage
(I C = 1.0 mAdc, I B= 0 )
Collector–Base Breakdown Voltage
(I C = 100 µAdc , I
Emitter–Base Breakdown Voltage
(I E = 10 µAdc , I
Collector Cutoff Current
( V CB = 25Vdc , I
Emitter Cutoff Current
( V EB = 2.0Vdc , I
1. FR–5 = 1.0 x 0.75 x 0.062 in.
2. Alumina = 0.4 x 0.3 x 0.024 in. 99.5% alumina.
C
E
= 0)
E
C
= 0)
= 0 )
= 0 )
V
V
V
(BR)CEO
(BR)CBO
(BR)EBO
I
CBO
I
EBO
25 — — Vdc
30 — — Vdc
3.0
—
— Vdc
— — 100 nAdc
— — 100 nAdc
M33–1/4
Page 2
LESHAN RADIO COMPANY, LTD.
MMBTH10LT1
ELECTRICAL CHARACTERISTICS (T
Characteristic Symbol Min Typ Max Unit
ON CHARACTERISTICS
DC Current Gain
(I C = 4.0 mAdc, V
= 10 Vdc)
CE
Collector–Emitter Saturation Voltage
(I C = 4.0mAdc, I B = 0.4 mAdc)
Base–Emitter On Voltage
(I C = 4.0mAdc, V
= 10Vdc)
CE
SMALL–SIGNAL CHARACTERISTICS
Current Gain–Bandwidth Product
(V CE = 10 Vdc, I C = 4.0mAdc, f = 100MHz)
Collector –Base Capacitance
(V CB = 10 Vdc, I E = 0, f = 1.0 MHz)
Collector –Base Feedback Capacitance
(V CB = 10 Vdc, I E = 0, f = 1.0 MHz)
Collector Base Time Constant
( I C = 4.0mAdc,V CB=10 Vdc, f = 31.8 MHz)
= 25°C unless otherwise noted) (Continued)
A
h
FE
V
CE(sat)
V
f
C
C
rb’ C
BE
T
cb
rb
C
60 ———
— — 0.5 Vdc
— — 0.95 Vdc
650 — — MHz
— — 0.7 pF
— — 0.65 pF
— — 9.0 ps
M33–2/4
Page 3
LESHAN RADIO COMPANY, LTD.
TYPICAL CHARACTERISTICS
COMMON–BASE y P ARAMETERS versus FREQUENCY
(V
= 10 Vdc, I C = 4.0 mAdc, T A = 25°C)
CB
yib , INPUT ADMITTANCE
MMBTH10LT1
80
70
60
50
40
30
20
, INPUT ADMITTANCE(mmhos)y
ib
10
y
0
100 200 300 400 500 700 1000
–b
g
ib
ib
f, FREQUENCY (MHz)
Figure 1. Rectangular Form
y fb , FORWARD TRANSFER ADMITTANCE
70
b
60
50
40
–g
30
20
10
0
–10
–20
, FORWARD TRANSFER ADMITTANCE (mmhos)
ib
–30
100 200 300 400 500 700 1000
fb
fb
0
–10
–20
1000MHz
–30
(mmhos)
ib
jb
–40
–50
–60
0 1020304050607080
700
g
(mmhos)
ib
400
200
Figure 2. Polar Form
60
200
50
100
40
30
(mmhos)
fb
jb
20
10
70 60 50 40 30 20 10 0 10 20 30
400
600
700
1000MHz
100
f, FREQUENCY (MHz)
Figure 3. Rectangular Form
g
(mmhos)
fb
Figure 4. Polar Form
M33–3/4
Page 4
LESHAN RADIO COMPANY, LTD.
TYPICAL CHARACTERISTICS
COMMON–BASE y PARAMETERS versus FREQUENCY
(V
= 10 Vdc, I C = 4.0 mAdc, T A = 25°C)
CB
, REVERSE TRANSFER ADMITTANCE
y
rb
MMBTH10LT1
5.0
4.0
3.0
2.0
1.0
0
100 200 300 400 500 700 1000
, REVERSE TRANSFER ADMITTANCE (mmhos)
rb
y
f, FREQUENCY (MHz)
–b
MPS H11
rb
MPS H1
–g
rb
Figure 5. Rectangular Form
10
9.0
8.0
7.0
6.0
5.0
4.0
3.0
2.0
1.0
, OUTPUT ADMITTANCE (mmhos)
ob
0
y
100 200 300 400 500 700 1000
b
ob
g
ob
f , FREQUENCY (MHz)
Figure 7. Rectangular Form
0
–1.0
–2.0
(mmhos)
–b
rb
–3.0
rb
jb
–4.0
–5.0
2.0 1.8 1.2 0.8 0.4 0 0.4 0.8 1.2 1.6 2.0
y
, OUTPUT ADMITTANCE
ob
10
8.0
6.0
(mmhos)
ob
4.0
jb
2.0
0
0 2.0 4.0 6.0 8.0 10
g
Figure 6. Polar Form
1000MHz
700
400
200
100
Figure 8. Polar Form
(mmhos)
rb
g
ob
100
200
400
700
1000MHz
(mmhos)
M33–4/4
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