Datasheet MMBTA94G Datasheet (UTC) [ru]

UNISONIC TECHNOLOGIES CO., LTD

MMBTA94

HIGH VOLTAGE TRANSISTOR

 FEATURES

* Collector-Emitter Voltage: V
* Collector Dissipation: P
* Low Collector-Emitter Saturation Voltage

APPLICATIONS



* Telephone Switching
* High Voltage Switch

 ORDERING INFORMATION

Note: Pin Assignment: E: Emitter B: Base C: Collector

C(MAX)

Ordering Number Package

MMBTA94G-AE3-R SOT-23 E B C Tape Reel

= -400V

CEO

= 350mW

PNP SILICON TRANSISTOR

3

1

2

SOT-23

(JEDEC TO-236)

Pin Assignment

1 2 3

Packing

 MARKING

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Copyright © 2014 Unisonic Technologies Co., Ltd QW-R206-008.F

MMBTA94 PNP SILICON TRANSISTOR

 ABSOLUTE MAXIMUM RATING (T

=25°С unless otherwise specified)

A

PARAMETER SYMBOL RATING UNIT
Collector-Base Voltage V
Collector-Emitter Voltage V
Emitter-Base Voltage V

-400 V

CBO

-400 V

CEO

-6 V

EBO

Collector Current IC -300 mA
Collector Dissipation (Ta=25C) PC 350 mW
Junction Temperature TJ +150 °С
Storage Temperature T

-40~+150 °С

STG

Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged.

Absolute maximum ratings are stress ratings only and functional device operation is not implied.

 ELECTRICAL CHARACTERISTICS (T

=25°С, unless otherwise specified)

A

PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNIT
Collector-Base Breakdown Voltage BV
Collector-Emitter Breakdown Voltage BV
Collector-Emitter Breakdown Voltage BV
Emitter-Base Breakdown Voltage BV
Collector Cut-off Current I
Collector Cut-off Current I
Emitter Cut-off Current I

DC Current Gain (Note) hFE

IC = -100µA, IE=0 -400 V

CBO

IC = -1mA, IB=0 -400 V

CEO

IC = -100µA,VBE=0 -400 V

CES

IE= -100µA, IC=0 -5 V

EBO

VCB= -300V, IE=0 -100 nA

CBO

VCB= -400V, VBE=0 -1 µA

CES

VEB= -4V, IC=0 100 nA

EBO

V

= -10V, IC= -1mA 60

CE

VCE= -10V, IC= -10mA 70 300
VCE= -10V, IC= -50mA 70
VCE= -10V, IC= -100mA 40

Collector-Emitter Saturation Voltage V

Base-Emitter Saturation Voltage V

CE(SAT)

BE(SAT)IC

IC= -10mA, IB= -1mA -0.20 V
IC= -50mA, IB= -5mA -0.5 V

= -10mA, IB= -1mA -0.75 V
Output Capacitance Cob VCB= -20V,IE=0, f =1MHz 7 pF
Note: Pulse test: PW<300µs, Duty Cycle<2%

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MMBTA94 PNP SILICON TRANSISTOR

TYPICAL CHARACTERISTICS



hFE,DC Current Gain

DC Current Gain

1000

VCE=-10V

100

10

1

-1 -10 -100 -1000

Collector Current, IC(mA)

Collector-Emitter Saturation Voltage Collector Output capacitance

-10

IC=10×I

B

-10

IC=10×I

-1.0

VBE(SAT) (V)

-0.1

Base-Emitter Saturation Voltage,

-0.01

-1 -10 -100 -1000

1000

IE=0
f=1MHz

Base-Emitter Saturation Voltage

B

Collector Current, I

(mA)

C

-1.0

VCE(SAT) (V)

-0.1

Collector-Emitter Saturation Voltage,

-0.01

-1 -10 -100

Collector Current, IC(mA)

100

10

Collector Output Capacitance (pF)

1

Collector Base Voltage (V)

UTC assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or
other parameters) listed in products specifications of any and all UTC products described or contained
herein. UTC products are not designed for use in life support appliances, devices or systems where
malfunction of these products can be reasonably expected to result in personal injury. Reproduction in
whole or in part is prohibited without the prior written consent of the copyright owner. The information
presented in this document does not form part of any quotation or contract, is believed to be accurate
and reliable and may be changed without notice.

-100-10-1-0.1

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