Datasheet MMBTA94 Datasheet (Secos) [ru]

Page 1
r
r
MMBTA94
PNP Silicon
Elektronische Bauelemente
RoHS Compliant Product
A suffix of “-C” specifies halogen & lead-free
FEATURES
High Voltage Transistor
MARKING
4D
PACKAGE INFORMATION
Package MPQ Leader Size
SOT-23 3K 7 inch
Base
MAXIMUM RATINGS ( T
PARAMETER SYMBOL RATINGS UNIT
Collector - Base Voltage V Collector - Emitter Voltage V Emitter - Base Voltage V Collector Current - Continuous IC -0.1 A Collector Power Dissipation
= 25°C unless otherwise specified)
A
CBO
CEO
EBO
PC 350 mW
-400 V
-400 V
-5 V
-400V, -0.1A, 350mW Epitaxial Transistor
Top View
1
K E
F
Collector
Emitte
REF.
SOT-23
A
L
3
C B
2
D
G
Millimeter Millimete
Min. Max.
A 2.70 3.04 G - 0.18 B 2.10 2.80 H 0.40 0.60 C 1.20 1.60 J 0.08 0.20 D 0.89 1.40 K 0.6 REF. E 1.78 2.04 L 0.85 1.15 F 0.30 0.50
1
2
H J
REF.
Min. Max.
3
Junction, Storage Temperature TJ, T
150, -55~150
STG
ELECTRICAL CHARACTERISTICS (T
PARAMETER TEST CONDITIONS SYMBOL MIN. TYP. MAX. UNIT
Collector-Base Breakdown Voltage IC =100µA, IE =0 V Collector-Emitter Breakdown Voltage IC = -1mA, IB =0 V Emitter-Base Breakdown Voltage IE = -100µA, IC =0 V Collector Cut-Off Current VCB = -400V, IE =0 I Emitter Cut-Off Current VEB = -4V, IC =0 I
DC Current Gain1
Collector-Emitter Saturation Voltage1
Base-Emitter Saturation Voltage1 I Transition frequency VCE = -20V, IC = -10mA fT 50 - - MHz
= 25°C unless otherwise specified)
A
-400 - - V
(BR)CBO
-400 - - V
(BR)CEO
-5 - - V
(BR)EBO
- - -0.1 µA
CBO
- - -0.1 µA
EBO
VCE = -10V, IC = -1mA 70 - - VCE = -10V, IC = -10mA 80 - 300 VCE = -10V, IC = -50mA 40 - -
= -10V, IC = -100mA
V
CE
IC = -10mA, IB = -1mA - - -0.2 V I
= -50mA, IB = -5mA
C
= -10mA, IB = -1mA V
C
h
FE
40 - -
V
CE(sat)
- - -0.75 V
BE(sat)
- - -0.3 V
Note:
1. Pulse test
01-Oct-2013 Rev. B Page 1 of 2
Page 2
Elektronische Bauelemente
CHARACTERISTIC CURVES
MMBTA94
PNP Silicon
-400V, -0.1A, 350mW Epitaxial Transistor
01-Oct-2013 Rev. B Page 2 of 2
Page 3
Loading...