Page 1
r
r
Elektronische Bauelemente
FEATURES
High Voltage Transistor
MARKING
3D
PACKING INFORMATION
Package MPQ Leader Size
SOT-23 3K 7 inch
NPN Silicon Epitaxial Transistor
RoHS Compliant Product
A suffix of “-C” specifies halogen & lead-free
Collector
Base
Emitte
MMBTA44
400V, 0.2A
A
3
Top View
1
K E
F
REF.
A 2.70 3.04 G - 0.18
B 2.10 2.80 H 0.40 0.60
C 1.20 1.60 J 0.08 0.20
D 0.89 1.40 K 0.6 REF.
E 1.78 2.04 L 0.85 1.15
F 0.30 0.50
SOT-23
L
C B
2
D
G
Millimeter Millimete
Min. Max.
1
H J
REF.
Min. Max.
3
2
MAXIMUM RATINGS (T
= 25°C unless otherwise specified)
A
Parameter Symbol Rating Unit
Collector - Base Voltage V
Collector - Emitter Voltage V
Emitter - Base Voltage V
Collector Current - Continuous IC 0.2 A
Collector Current -Pulsed ICM 0.3 A
Collector Power Dissipation
Thermal Resistance From Junction To Ambient R
Junction, Storage Temperature TJ, T
400 V
CBO
400 V
CEO
6 V
EBO
PC 350 mW
357 °C / W
θJA
150, -55~150 °C
STG
ELECTRICAL CHARACTERISTICS (T
Parameter Test Conditions Symbol Min. Typ. Max. Unit
Collector-Base Breakdown Voltage IC =100µA, IE =0 V
Collector-Emitter Breakdown Voltage1 IC =1mA, IB =0 V
Emitter-Base Breakdown Voltage IE =10µA, IC =0 V
Collector Cut-Off Current VCB =400V, IE =0 I
Emitter Cut-Off Current VEB =4V, IC =0 I
DC Current Gain 1
Collector-Emitter Saturation Voltage 1
Base-Emitter Saturation Voltage 1 I
Output Capacitance VCB =20V, IE =0, f=1MHz C
Input Capacitance VEB =0.5V, IC =0, f=1MHz C
= 25°C unless otherwise specified)
A
400 - - V
(BR)CBO
400 - - V
(BR)CEO
6 - - V
(BR)EBO
- - 0.1 µA
CBO
- - 0.1 µA
EBO
VCE =10V, IC =1mA 40 - -
VCE =10V, IC =10mA 50 - 200
VCE =10V, IC =50mA 45 - -
V
=10V, IC =100mA
CE
h
FE
40 - -
IC =1mA, IB =0.1mA - - 0.4
V
IC =10mA, IB =1mA - - 0.5
=50mA, IB =5mA
I
C
=10mA, IB =1mA V
C
CE(sat)
- - 0.75
- - 0.75 V
BE(sat)
- - 7 pF
obo
- - 130 pF
ibo
V
Note:
1. Pulse test: pulse width ≤300μs, duty cycle≤ 2.0%.
http://www.SeCoSGmbH.com/ Any changes of specification will not be informed individually.
09-Oct-2014 Rev. D Page 1 of 2
Page 2
Elektronische Bauelemente
CHARACTERISTIC CURVES
MMBTA44
NPN Silicon Epitaxial Transistor
400V, 0.2A
http://www.SeCoSGmbH.com/ Any changes of specification will not be informed individually.
09-Oct-2014 Rev. D Page 2 of 2
Page 3
Loading...