Datasheet MMBT6427LT1 Datasheet (Motorola)

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Page 1

Motorola Small–Signal Transistors, FETs and Diodes Device Data

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NPN Silicon

MAXIMUM RATINGS

Rating Symbol Value Unit

Collector–Emitter Voltage V

CEO

40 Vdc

Collector–Base Voltage V

CBO

40 Vdc

Emitter–Base Voltage V

EBO

12 Vdc

Collector Current — Continuous I

500 mAdc

THERMAL CHARACTERISTICS

Characteristic Symbol Max Unit

Total Device Dissipation FR–5 Board

(1)

TA = 25°C Derate above 25°C

225

1.8

mW/°C

Thermal Resistance, Junction to Ambient

556 °C/W

Total Device Dissipation

Alumina Substrate,

(2)

TA = 25°C

Derate above 25°C

300

2.4

mW/°C

Thermal Resistance, Junction to Ambient

417 °C/W

Junction and Storage Temperature TJ, T

stg

–55 to +150 °C

DEVICE MARKING

MMBT6427LT1 = 1V

ELECTRICAL CHARACTERISTICS (T

= 25°C unless otherwise noted)

Characteristic

Symbol Min Max Unit

OFF CHARACTERISTICS

Collector–Emitter Breakdown Voltage

(IC = 10 mAdc, VBE = 0)

(BR)CEO

40 —

Vdc

Collector–Base Breakdown Voltage

(IC = 100 mAdc, IE = 0)

(BR)CBO

40 —

Vdc

Emitter–Base Breakdown Voltage

(IC = 10 mAdc, IC = 0)

(BR)EBO

12 —

Vdc

Collector Cutoff Current

(VCE = 25 Vdc, IB = 0)

CES

— 1.0

µAdc

Collector Cutoff Current

(VCB = 30 Vdc, IE = 0)

CBO

— 50

nAdc

Emitter Cutoff Current

(VEB = 10 Vdc, IC = 0)

EBO

— 50

nAdc

1. FR–5 = 1.0  0.75  0.062 in.

2. Alumina = 0.4  0.3  0.024 in. 99.5% alumina.

Thermal Clad is a trademark of the Bergquist Company.

Preferred devices are Motorola recommended choices for future use and best overall value.

Order this document

by MMBT6427LT1/D

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SEMICONDUCTOR TECHNICAL DATA



Motorola Preferred Device

CASE 318–08, STYLE 6

SOT–23 (TO–236AB)

 Motorola, Inc. 1996

COLLECTOR 3

BASE

EMITTER 2

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MMBT6427LT1

Motorola Small–Signal Transistors, FETs and Diodes Device Data

ELECTRICAL CHARACTERISTICS (T

= 25°C unless otherwise noted) (Continued)

Characteristic

Symbol Min Max Unit

ON CHARACTERISTICS

DC Current Gain

(IC = 10 mAdc, VCE = 5.0 Vdc) (IC = 100 mAdc, VCE = 5.0 Vdc) (IC = 500 mAdc, VCE = 5.0 Vdc)

10,000 20,000 14,000

100,000 200,000 140,000

—

Collector–Emitter Saturation Voltage

(IC = 50 mAdc, IB = 0.5 mAdc) (IC = 500 mAdc, IB = 0.5 mAdc)

CE(sat)

(3)

— —

1.2

1.5

Vdc

Base–Emitter Saturation Voltage

(IC = 500 mAdc, IB = 0.5 mAdc)

BE(sat)

— 2.0

Vdc

Base–Emitter On Voltage

(IC = 50 mAdc, VCE = 5.0 Vdc)

BE(on)

— 1.75

Vdc

SMALL–SIGNAL CHARACTERISTICS

Output Capacitance

(VCB = 10 Vdc, IE = 0, f = 1.0 MHz)

obo

— 7.0

Input Capacitance

(VEB = 0.5 Vdc, IC = 0, f = 1.0 MHz)

ibo

— 15

CurrentGain — High Frequency

(IC = 10 mAdc, VCE = 5.0 Vdc, f = 100 MHz)

|hfe|

1.3 —

Vdc

Noise Figure

(IC = 1.0 mAdc, VCE = 5.0 Vdc, RS = 100 kΩ, f = 1.0 kHz)

— 10

3. Pulse Test: Pulse Width = 300 ms, Duty Cycle = 2.0%.

IDEAL

TRANSISTOR

Figure 1. Transistor Noise Model

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MMBT6427LT1

Motorola Small–Signal Transistors, FETs and Diodes Device Data

NOISE CHARACTERISTICS

(VCE = 5.0 Vdc, TA = 25°C)

Figure 2. Noise Voltage

f, FREQUENCY (Hz)

100

200

500

Figure 3. Noise Current

f, FREQUENCY (Hz)

Figure 4. Total Wideband Noise Voltage

RS, SOURCE RESISTANCE (kΩ)

Figure 5. Wideband Noise Figure

RS, SOURCE RESISTANCE (kΩ)

5.0

100

200

1.0

101020 50 100 200 500 1 k 2 k 5 k 10 k 20 k 50 k 100 k

2.0

1.0

0.7

0.5

0.3

0.2

0.1

0.07

0.05

0.03

0.02

BANDWIDTH = 1.0 Hz RS

≈

IC = 1.0 mA

100 µA

10 µA

BANDWIDTH = 1.0 Hz

IC = 1.0 mA

100 µA

10 µA

, NOISE VOLTAGE (nV)

, NOISE CURRENT (pA)

2.0 5.0 10 20 50 100 200 500 100 0

BANDWIDTH = 10 Hz TO 15.7 kHz

IC = 10 µA

100 µA

1.0 mA

8.0

6.0

4.0

1.0 2.0 5.0 10 20 50 100 200 500 100 0

2.0

BANDWIDTH = 10 Hz TO 15.7 kHz

10 µA

100 µA

IC = 1.0 mA

, TOTAL WIDEBAND NOISE VOLTAGE (nV)

NF, NOISE FIGURE (dB)

10 20 50 100 200 500 1 k 2 k 5 k 10 k 20 k 50 k 100 k

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MMBT6427LT1

Motorola Small–Signal Transistors, FETs and Diodes Device Data

SMALL–SIGNAL CHARACTERISTICS

Figure 6. Capacitance

VR, REVERSE VOLTAGE (VOLTS)

5.0

7.0

3.0

Figure 7. High Frequency Current Gain

IC, COLLECTOR CURRENT (mA)

Figure 8. DC Current Gain

IC, COLLECTOR CURRENT (mA)

Figure 9. Collector Saturation Region

IB, BASE CURRENT (µA)

2.0

200 k

5.0

0.04

4.0

2.0

1.0

0.8

0.6

0.4

0.2

TJ = 25°C

C, CAPACITANCE (pF)

1.5

2.0

2.5

3.0

1.0

0.5

|, SMALL–SIGNAL CURRENT GAIN

, DC CURRENT GAIN

, COLLECTOR–EMITTER VOLTAGE (VOLTS)

0.1 0.2 0.4 1.0 2.0 4.0 10 20 40

ibo

obo

0.5 1.0 2.0 0.5 10 20 50 100 200 500

VCE = 5.0 V f = 100 MHz TJ = 25

100 k

70 k 50 k

30 k 20 k

10 k

7.0 k

5.0 k

3.0 k

2.0 k

7.0 10 20 30 50 70 100 200 300

500

TJ = 125°C

25°C

–55°C

VCE = 5.0 V

0.1 0.2 0.5 1.0 2.0 5.0 10 20 50 100 200 500 1000

TJ = 25°C

IC =

10 mA

50 mA 250 mA 500 mA

Figure 10. “On” Voltages

IC, COLLECTOR CURRENT (mA)

Figure 11. Temperature Coefficients

IC, COLLECTOR CURRENT (mA)

1.6

5.0

–1.0

V, VOLTAGE (VOLTS)

1.4

1.2

1.0

0.8

0.6

7.0 10 20 30 50 70 100 200 300 500

BE(sat)

@ IC/IB = 1000

, TEMPERATURE COEFFICIENTS (mV/ C)

TJ = 25°C

BE(on)

@ VCE = 5.0 V

CE(sat)

@ IC/IB = 1000

–2.0

–3.0

–4.0

–5.0

–6.0

5.0 7.0 10 20 30 50 70 100 200 300 500

25°C TO 125°C

–55°C TO 25°C

FOR V

CE(sat)

FOR V

25°C TO 125°C

–55°C TO 25°C

*APPLIES FOR IC/IB ≤ hFE/3.0

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MMBT6427LT1

Motorola Small–Signal Transistors, FETs and Diodes Device Data

Figure 12. Thermal Response

t, TIME (ms)

1.0

r(t), TRANSIENT THERMAL

2.0 5.01.00.50.20.1

RESISTANCE (NORMALIZED)

0.7

0.5

0.3

0.2

0.1

0.07

0.05

0.03

0.02

0.01 20 5010 200 500100 1.0 k 2.0 k 5.0 k 10 k

D = 0.5

0.2

0.1

0.05

SINGLE PULSE

JC(t)

= r(t)

•

JCTJ(pk)

– TC = P

(pk) Zθ

JC(t)

JA(t)

= r(t)

•

JATJ(pk)

– TA = P

(pk) Zθ

JA(t)

Design Note: Use of Transient Thermal Resistance Data

FIGURE A

1/f

DUTY CYCLE

t1f

PEAK PULSE POWER = P

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MMBT6427LT1

Motorola Small–Signal Transistors, FETs and Diodes Device Data

INFORMATION FOR USING THE SOT–23 SURFACE MOUNT PACKAGE

MINIMUM RECOMMENDED FOOTPRINT FOR SURFACE MOUNTED APPLICATIONS

Surface mount board layout is a critical portion of the total design. The footprint for the semiconductor packages must be the correct size to i nsure proper solder connection

interface between the board and the p ackage. With the correct p ad geometry, the packages will s elf align when subjected to a solder reflow process.

SOT–23

inches

0.037

0.95

0.037

0.95

0.079

2.0

0.035

0.9

0.031

0.8

SOT–23 POWER DISSIPATION

The power dissipation of the SOT–23 is a function of the pad size. T his can vary from the minimum pad size for soldering to a pad size given for maximum power dissipation. Power dissipation for a surface mount device is determined by T

J(max)

, the maximum rated junction temperature of the

die, R

θJA

, the thermal resistance from the device junction to ambient, a nd the operating temperature, TA. Using t he values provided on the data sheet for the SOT–23 package, PD can be calculated as follows:

The values for the equation are found in the maximum ratings table on the data sheet. Substituting these values into the equation for an ambient temperature TA of 25°C, one can calculate the power dissipation of the device which in this case is 225 milliwatts.

The 556°C/W for the SOT–23 package assumes the use of the recommended footprint on a glass epoxy printed circuit board to achieve a power dissipation of 225 milliwatts. There are other alternatives to achieving higher power dissipation from the SOT–23 package. Another alternative would be to use a ceramic substrate or an aluminum core board such as Thermal Clad. Using a board material such as Thermal Clad, an aluminum core board, the power dissipation can be doubled using the same footprint.

SOLDERING PRECAUTIONS

The melting temperature of solder is higher than the rated temperature of the device. When the entire device is heated to a high temperature, failure to complete soldering within a short t ime could r esult in device failure. T herefore, the following items should always be o bserved in o rder t o minimize t he thermal s tress t o which the devices a re subjected.

• Always preheat the device.

• The delta temperature between the preheat and

soldering should be 100°C or less.*

• When preheating and soldering, the temperature of the

leads and the case must not exceed the maximum temperature ratings as shown on the data sheet. When using infrared heating with the reflow soldering method, the difference shall be a maximum of 10°C.

• The soldering temperature and time shall not exceed

260°C for more than 10 seconds.

• When shifting from preheating to soldering, the

maximum temperature gradient shall be 5°C or less.

• After soldering has been completed, the device should

be allowed to cool naturally for at least three minutes. Gradual cooling should be used as the use of forced cooling will increase the temperature gradient and result in latent failure due to mechanical stress.

• Mechanical stress or shock should not be applied during

cooling.

* Soldering a device without preheating can cause excessive thermal shock and stress which can result in damage to the device.

PD =

150°C – 25°C

556°C/W

J(max)

θJA

– T

= 225 milliwatts

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MMBT6427LT1

Motorola Small–Signal Transistors, FETs and Diodes Device Data

PACKAGE DIMENSIONS

CASE 318–08

ISSUE AE

SOT–23 (TO–236AB)

STYLE 6:

PIN 1. BASE

2. EMITTER

3. COLLECTOR

DIMAMIN MAX MIN MAX

MILLIMETERS

0.1102 0.1197 2.80 3.04

INCHES

B 0.0472 0.0551 1.20 1.40 C 0.0350 0.0440 0.89 1.11 D 0.0150 0.0200 0.37 0.50 G 0.0701 0.0807 1.78 2.04 H 0.0005 0.0040 0.013 0.100 J 0.0034 0.0070 0.085 0.177 K 0.0180 0.0236 0.45 0.60 L 0.0350 0.0401 0.89 1.02 S 0.0830 0.0984 2.10 2.50 V 0.0177 0.0236 0.45 0.60

NOTES:

1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982.

2. CONTROLLING DIMENSION: INCH.

3. MAXIMUM LEAD THICKNESS INCLUDES LEAD FINISH THICKNESS. MINIMUM LEAD THICKNESS IS THE MINIMUM THICKNESS OF BASE MATERIAL.

Page 8

MMBT6427LT1

Motorola Small–Signal Transistors, FETs and Diodes Device Data

Motorola reserves the right to make changes without further notice to any products herein. Motorola makes no warranty , representation or guarantee regarding the suitability of its products for any particular purpose, nor does Motorola assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability , including without limitation consequential or incidental damages. “Typical” parameters which may be provided in Motorola data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. Motorola does not convey any license under its patent rights nor the rights of others. Motorola products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the Motorola product could create a situation where personal injury or death may occur. Should Buyer purchase or use Motorola products for any such unintended or unauthorized application, Buyer shall indemnify and hold Motorola and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that Motorola was negligent regarding the design or manufacture of the part. Motorola and are registered trademarks of Motorola, Inc. Motorola, Inc. is an Equal Opportunity/Affirmative Action Employer.

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MMBT6427LT1/D

*MMBT6427LT1/D*

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