Page 1
MMBT2907AK
PNP Epitaxial Silicon Transistor
General Purpose Transistor
MMBT2907AK PNP Epitaxial Silicon Transistor
3
2
SOT-23
1
Marking
2FK
1. Base 2. Emitter 3. Collector
Absolute Maximum Ratings T
= 25°C unless otherwise noted
a
Symbol Parameter Value Units
V
CBO
V
CEO
V
EBO
I
C
P
C
T
J, TSTG
Electrical Characteristics T
Collector-Base Voltage -60 V Collector-Emitter Voltage -60 V Emitter-Base Voltage -5 V Collector Current -600 mA Collector Power Dissipation 350 mW Operating Junction and Storage Temperature Range -55 ~ 150 °C
=25°C unless otherwise noted
a
Symbol Parameter Test Condition Min. Max. Units
BV
CBO
BV
CEO
BV
EBO
I
CBO
h
FE
V
CE
V
(sat) Base-Emitter Saturation Voltage * IC = -150mA, IB = -15mA
BE
f
T
C
ob
t
ON
t
OFF
* Pulse Test: Pulse Width≤300µs, Duty Cycle≤2%
Collector-Base Breakdown Voltage IC = -10µA, IE = 0 -60 V
Collector-Emitter Breakdown Voltage * IC = -10mA, IB = 0 -60 V
Emitter-Base Breakdown Voltage IE = -10µA, IC = 0 -5 V
Collector Cut-off Current V
DC Current Gain V
= -50V, IE = 0 -0.01 µA
CB
= -10V, IC = -0.1mA
CE
V
= -10V, IC = -1.0mA
CE
V
= -10V, IC = -10mA
CE
V
= -10V, IC = -150mA *
CE
V
= -10V, IC = -500mA *
CE
75
100
100
100
50
(sat) Collector-Emitter Saturation Voltage * IC = -150mA, IB = -15mA
IC = -500mA, IB = -50mA
IC = -500mA, IB = -50mA
Current Gain Bandwidth Product IC = -50mA, V
Output Capacitance V
Turn On Time V
Turn Off Time V
= -10V, IE = 0, f = 1.0MHz 8 pF
CB
= -30V, IC = -150mA
CC
I
= -15mA
B1
= -6V, IC = -150mA
CC
I
= I
B1
B2
= -20V, f = 100MHz 200 MHz
CE
= -15mA
300
-0.4
-1.6
-1.3
-2.6
50 ns
110 ns
V
V
V
V
©2006 Fairchild Semiconductor Corporation 1 www.fairchildsemi.com
MMBT2907AK Rev. B
Page 2
Typical Performance Characteristics
Figure 1. DC current Gain Figure 2. Collector-Emitter Saturation Voltage
MMBT2907AK PNP Epitaxial Silicon Transistor
400
350
300
250
200
hfe, Current Gain
150
100
50
0.1 1 10 100
125C
75C
25C
Collector Current, [mA]
Vce=5V
0.7
0.6
0.5
0.4
0.3
0.2
0.1
Vce(sat), Saturation Current,[V]
1 10 100
Collector Current, [mA]
B=10
125C
75C
25C
Figure 3. Base-Emitter Saturation Voltage Figure 4. Collector - Base Leakage Current
1.0
0.9
0.8
0.7
0.6
0.5
0.4
Vbe(sat), Saturation Current,[V]
0.3
0.1 1 10 100
25C
75C
125C
Collector Current, [mA]
B=10
100
VCB = 35V
10
1
Leakage current of Collector - Base(nA)
0.1
25 50 75 100 125 150
Temperature, ['C]
Figure 5. Output Capacitance Figure 6. Power Dissipation vs
Ambient Temperature
12
10
8
6
4
[pF], Capacitance
ob
C
2
0
-1 -10 -100
MMBT2907AK Rev. B
VCB [V], C ollecto r-Base V oltage
IE = 0
f = 1MHz
0.4
0.3
0.2
- Power Dissipation (W)
0.1
D
P
0.0
0 25 50 75 100 125 150
Temperature, [ OC]
2 www.fairchildsemi.com
Page 3
Mechanical Dimensions
0
F
3
N
0.40
±0.03
MMBT2907AK PNP Epitaxial Silicon Transistor
SOT-23
0.20 MI
0.45~0.60
0.95
2.90
±0.03
1.90
±0.10
0.95
±0.03
±0.03
±0.10
0.40
±0.03
0.97REF 1.30
0.508REF
±0.10
2.40
0.96~1.14
0.03~0.1
0.38 RE
+0.05
0.12
–0.02
MMBT2907AK Rev. B
Dimensions in Millimeters
3 www.fairchildsemi.com
Page 4
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be an exhaustive list of all such trademarks.
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®
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DISCLAIMER
FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY
PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. F AIRCHILD DOES NOT ASSUME ANY LIABILITY
ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT
CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.
MMBT2907AK PNP Epitaxial Silicon Transistor
LIFE SUPPORT POLICY
FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR
SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION.
As used herein:
1. Life support devices or syst ems are devices or s ystems which,
(a) are intended for surgical implant int o the bod y, or (b) s up por t
or sustain life, or (c) whose failure to pe rform when properly used
in accordance with instructions for use provided in t he labeling,
can be reasonably expected to result in significant injury to the
user.
2. A critical component is any component of a life supp ort device
or system whose failure to perform can be reasonably expected
to cause the failure of the life support device or system, or to
affect its safety or effectiveness.
PRODUCT STATUS DEFINITIONS
Definition of Terms
Datasheet Identification Product Status Definition
Advance Information Formative or In
Design
Preliminary First Production This datasheet contains preliminary data, and
No Identification Needed Full Production This datasheet contains final specifications. Fairchild
This datasheet contains the design specifications for
product development. Specifications may change in
any manner without notice.
supplementary data will be published at a later date.
Fairchild Semiconductor reserves the right to make
changes at any time without notice in order to improv e
design.
Semiconductor reserves the right to make changes at
any time without notice in order to improve design.
Obsolete Not In Production This datasheet contains specifications on a product
that has been discontinued by Fairchild semiconductor.
The datasheet is printed for reference information only.
4 www.fairchildsemi.com
MMBT2907AK Rev. B
Rev. I17
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