Datasheet MMBT2222AWT1 Datasheet (ON) [ru]

MMBT2222AWT1

Preferred Device

General Purpose Transistor

NPN Silicon

These transistors are designed for general purpose amplifier
applications. They are housed in the SOT–323/SC–70 package which
is designed for low power surface mount applications.

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MAXIMUM RATINGS

Rating Symbol Value Unit

Collector–Emitter Voltage V
Collector–Base Voltage V
Emitter–Base Voltage V
Collector Current – Continuous I

THERMAL CHARACTERISTICS

Characteristic Symbol Max Unit

Total Device Dissipation FR–5 Board

TA = 25°C

Thermal Resistance

Junction to Ambient

Junction and Storage Temperature TJ, T

CEO
CBO
EBO

P

R

C

D

JA

–55 to +150 °C

stg

40 Vdc
75 Vdc

6.0 Vdc

600 mAdc

150 mW

833 °C/W

COLLECTOR

3

1

BASE

2

EMITTER

3

1

2

SC–70

CASE 419

STYLE 3

MARKING DIAGRAM

P1 M

 Semiconductor Components Industries, LLC, 2001

July, 2001 – Rev. 2

P1 = Specific Device Code
M = Date Code

ORDERING INFORMATION

Device Package Shipping

MMBT2222AWT1 SC–70

Preferred devices are recommended choices for future use
and best overall value.

1 Publication Order Number:

3000/Tape & Reel

MMBT2222AWT1/D

MMBT2222AWT1

(V

CC

Vdc, V

BE

Vdc

(V

CC

Vdc, I

C

150 mAdc

ELECTRICAL CHARACTERISTICS (T

Characteristic

= 25°C unless otherwise noted)

A

OFF CHARACTERISTICS

Collector–Emitter Breakdown Voltage (Note 1.)

(IC = 1.0 mAdc, IB = 0)

Collector–Base Breakdown Voltage

(IC = 10 Adc, IE = 0)

Emitter–Base Breakdown Voltage

(IE = 10 Adc, IC = 0)

Base Cutoff Current

(VCE = 60 Vdc, VEB = 3.0 Vdc)

Collector Cutoff Current

(VCE = 60 Vdc, VEB = 3.0 Vdc)

ON CHARACTERISTICS (Note 1.)

DC Current Gain (Note 1.)

(IC = 0.1 mAdc, VCE = 10 Vdc)
(IC = 1.0 mAdc, VCE = 10 Vdc)
(IC = 10 mAdc, VCE = 10 Vdc)
(IC = 150 mAdc, VCE = 10 Vdc)
(IC = 500 mAdc, VCE = 10 Vdc)

Collector–Emitter Saturation Voltage (Note 1.)

(IC = 150 mAdc, IB = 15 mAdc)
(IC = 500 mAdc, IB = 50 mAdc)

Base–Emitter Saturation Voltage (Note 1.)

(IC = 150 mAdc, IB = 15 mAdc)
(IC = 500 mAdc, IB = 50 mAdc)

SMALL–SIGNAL CHARACTERISTICS

Current–Gain – Bandwidth Product

(IC = 20 mAdc, VCE = 20 Vdc, f = 100 MHz)

Output Capacitance

(VCB = 10 Vdc, IE = 0, f = 1.0 MHz)

Input Capacitance

(VEB = 0.5 Vdc, IC = 0, f = 1.0 MHz)

Input Impedance

(VCE = 10 Vdc, IC = 10 mAdc, f = 1.0 kHz)

Voltage Feedback Ratio

(VCE = 10 Vdc, IC = 10 mAdc, f = 1.0 kHz)

Small–Signal Current Gain

(VCE = 10 Vdc, IC = 10 mAdc, f = 1.0 kHz)

Output Admittance

(VCE = 10 Vdc, IC = 10 mAdc, f = 1.0 kHz)

Noise Figure

(VCE = 10 Vdc, IC = 100 Adc, RS = 1.0 k, f = 1.0 kHz)

SWITCHING CHARACTERISTICS

Delay Time
Rise Time
Storage Time
Fall Time

1. Pulse Test: Pulse Width  300 s, Duty Cycle  2.0%.

(VCC = 3.0 Vdc, VBE = –0.5 Vdc,

3.0

IC = 150 mAdc, IB1 = 15 mAdc)

(VCC = 30 Vdc, IC = 150 mAdc,

30
IB1 = IB2 = 15 mAdc)

0.5

Symbol Min Max Unit

V

(BR)CEO

V

(BR)CBO

V

(BR)EBO

I

BL

I

CEX

H

FE

V

CE(sat)

V

BE(sat)

f

T

C

obo

C

ibo

h

ie

h

re

h

fe

h

oe

NF – 4.0 dB

t

,

,

d

t

r

t

s

t

f

40 – Vdc

75 – Vdc

6.0 – Vdc

– 20 nAdc

– 10 nAdc

35
50
75

100

40

–
–

0.6
–

300 – MHz

– 8.0 pF

– 30 pF

0.25 1.25 k ohms

– 4.0 X 10

75 375 –

25 200 mhos

– 10
– 25
– 225
– 60

–
–
–

300

–

0.3

1.0

1.2

2.0

–

Vdc

Vdc

–4

ns

ns

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MMBT2222AWT1

SWITCHING TIME EQUIVALENT TEST CIRCUITS

+16 V

0

-2 V

, DC CURRENT GAINV

FE

h

1000

700
500

300

200

100

+30 V

200

CS* < 10 pF

1.0 to 100 µs,
DUTY CYCLE ≈ 2.0%

< 2 ns

1 kΩ

+30 V

200

CS* < 10 pF

Scope rise time < 4 ns
*Total shunt capacitance of test jig, connectors, and oscilloscope.

+16 V

0

-14 V

1.0 to 100 µs,
DUTY CYCLE ≈ 2.0%

< 20 ns

1 k

1N914

-4 V

Figure 1. Turn–On Time Figure 2. Turn–Off Time

70
50

30

20

10

IC, COLLECTOR CURRENT (mA)

Figure 3. DC Current Gain

1.0

0.8

0.6

0.4

0.2

, COLLECTOR-EMITTER VOLTAGE (VOLTS)

CE

0

0.005 0.01 0.02 0.03 0.05 0.1 0.2 0.3 0.5 1.0 2.0 3.0 5.0 10 20 30 50
IB, BASE CURRENT (mA)

Figure 4. Collector Saturation Region

1.0 k0.1 0.2 0.3 0.5 0.7 1.0 2.0 3.0 5.0 7.0 10 20 30 50 70 100 200 300 500 700

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3

MMBT2222AWT1

200

100

70
50

30

20

t, TIME (ns)

10

7.0

5.0

3.0

2.0

5.0 7.0 30 50

10 20

IC, COLLECTOR CURRENT (mA)

Figure 5. Turn–On Time

10

8.0

6.0

IC = 1.0 mA, R
500 µA, RS = 200 Ω
100 µA, RS = 2.0 kΩ
50 µA, RS = 4.0 kΩ

= 150 Ω

S

tr @ VCC = 30 V
td @ V
td @ V

70

= 2.0 V

EB(off)

= 0

EB(off)

100

RS = OPTIMUM

RS = SOURCE
RS = RESISTANCE

200

IC/IB = 10
T

= 25°C

J

300 500

t, TIME (ns)

500

300

200

100

7.0

5.0

8.0

6.0

VCC = 30 V

t′

= ts - 1/8 t

s

70
50

30

20

10

10 20 70 1005.0 7.0 30 50 200 300 500

IC, COLLECTOR CURRENT (mA)

f

t

f

IC/IB = 10
IB1 = I

B2

T

= 25°C

J

Figure 6. Turn–Off Time

10

f = 1.0 kHz

I

= 50 µA

C

100 µA
500 µA

1.0 mA

4.0

NF, NOISE FIGURE (dB)

2.0

0

0.01 0.02 0.05

30

20

10

7.0

5.0

CAPACITANCE (pF)

3.0

2.0

0.1

0.2 0.3 0.5 0.7

0.1

0.2 0.5

1.0 2.0 5.0 10 20

f, FREQUENCY (kHz)

Figure 7. Frequency Effects

C

eb

1.0 2.0 3.0 5.0 7.0 10 20

REVERSE VOLTAGE (VOLTS)

C

cb

50

100

30 50

4.0

NF, NOISE FIGURE (dB)

2.0

0

50 100 200 500

1.0 k 2.0 k 5.0 k 10 k 20 k 50 k 100 k

RS, SOURCE RESISTANCE (OHMS)

Figure 8. Source Resistance Effects

500

VCE = 20 V
T

= 25°C

300

200

100

70

, CURRENT-GAIN BANDWIDTH PRODUCT (MHz)

50

T

f

1.0 2.0 3.0 5.0 7.0 10 20

J

IC, COLLECTOR CURRENT (mA)

30 50 70 100

Figure 9. Capacitances

Figure 10. Current–Gain Bandwidth Product

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MMBT2222AWT1

1.0
T

= 25°C

J

0.8

V

@ IC/IB = 10

BE(sat)

0.6

V

@ VCE = 10 V

BE(on)

0.4

V, VOLTAGE (VOLTS)

0.2

V

@ IC/IB = 10

CE(sat)

0

0.1 1.0 2.0 5.0 10 20

0.2 0.5
IC, COLLECTOR CURRENT (mA)

Figure 11. “On” Voltages

1.0 V

50

100 200 500 1.0 k

+0.5

0

°

-0.5

-1.0

-1.5

COEFFICIENT (mV/ C)

-2.0

-2.5

0.1 1.0 2.0 5.0 10 20 500.2 0.5 100 200 500
IC, COLLECTOR CURRENT (mA)

R

R

VC

VB

for V

for V

CE(sat)

BE

Figure 12. Temperature Coefficients

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MMBT2222AWT1

INFORMATION FOR USING THE SC–70/SOT–323 SURFACE MOUNT PACKAGE

MINIMUM RECOMMENDED FOOTPRINT FOR SURFACE MOUNTED APPLICATIONS

Surface mount board layout is a critical portion of the total
design. The footprint for the semiconductor packages must
be the correct size to insure proper solder connection

0.025

0.65

0.035

0.9

0.028

SC–70/SOT–323 POWER DISSIPATION

The power dissipation of the SC–70/SOT–323 is a func­tion of the pad size. This can vary from the minimum pad
size for soldering to the pad size given for maximum power
dissipation. Power dissipation for a surface mount device
is determined by T

, the maximum rated junction tem-

J(max)

perature of the die, RθJA, the thermal resistance from the
device junction to ambient; and the operating temperature,
TA. Using the values provided on the data sheet, PD can be
calculated as follows.

PD =

T

J(max)

R

θJA

– T

A

The values for the equation are found in the maximum
ratings table on the data sheet. Substituting these values into

interface between the board and the package. With the
correct pad geometry, the packages will self align when
subjected to a solder reflow process.

0.025

0.65

0.075

1.9

0.7

inches

mm

the equation for an ambient temperature TA of 25°C, one
can calculate the power dissipation of the device which in
this case is 200 milliwatts.

PD =

150°C – 25°C

0.625°C/W

= 200 milliwatts

The 0.625°C/W assumes the use of the recommended

footprint on a glass epoxy printed circuit board to achieve
a power dissipation of 200 milliwatts. Another alternative
would be to use a ceramic substrate or an aluminum core
board such as Thermal Clad. Using a board material such
as Thermal Clad, a higher power dissipation of 300 milli­watts can be achieved using the same footprint.

SOLDERING PRECAUTIONS

The melting temperature of solder is higher than the rated
temperature of the device. When the entire device is heated
to a high temperature, failure to complete soldering within
a short time could result in device failure. Therefore, the
following items should always be observed in order to
minimize the thermal stress to which the devices are
subjected.

• Always preheat the device.

• The delta temperature between the preheat and

soldering should be 100°C or less.*

• When preheating and soldering, the temperature of the

leads and the case must not exceed the maximum
temperature ratings as shown on the data sheet. When
using infrared heating with the reflow soldering
method, the difference should be a maximum of 10°C.

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• The soldering temperature and time should not exceed

260°C for more than 10 seconds.

• When shifting from preheating to soldering, the

maximum temperature gradient should be 5°C or less.

• After soldering has been completed, the device should

be allowed to cool naturally for at least three minutes.
Gradual cooling should be used as the use of forced
cooling will increase the temperature gradient and
result in latent failure due to mechanical stress.

• Mechanical stress or shock should not be applied dur-

ing cooling
* Soldering a device without preheating can cause exces­sive thermal shock and stress which can result in damage
to the device.

6

MMBT2222AWT1

SOLDER STENCIL GUIDELINES

Prior to placing surface mount components onto a printed
circuit board, solder paste must be applied to the pads. A
solder stencil is required to screen the optimum amount of
solder paste onto the footprint. The stencil is made of brass
or stainless steel with a typical thickness of 0.008 inches.

TYPICAL SOLDER HEATING PROFILE

For any given circuit board, there will be a group of
control settings that will give the desired heat pattern. The
operator must set temperatures for several heating zones,
and a figure for belt speed. Taken together, these control
settings make up a heating “profile” for that particular
circuit board. On machines controlled by a computer, the
computer remembers these profiles from one operating
session to the next. Figure 7 shows a typical heating profile
for use when soldering a surface mount device to a printed
circuit board. This profile will vary among soldering
systems but it is a good starting point. Factors that can
affect the profile include the type of soldering system in
use, density and types of components on the board, type of
solder used, and the type of board or substrate material
being used. This profile shows temperature versus time.

The stencil opening size for the surface mounted package
should be the same as the pad size on the printed circuit
board, i.e., a 1:1 registration.

The line on the graph shows the actual temperature that
might be experienced on the surface of a test board at or
near a central solder joint. The two profiles are based on a
high density and a low density board. The Vitronics
SMD310 convection/infrared reflow soldering system was
used to generate this profile. The type of solder used was
62/36/2 Tin Lead Silver with a melting point between
177–189°C. When this type of furnace is used for solder
reflow work, the circuit boards and solder joints tend to
heat first. The components on the board are then heated by
conduction. The circuit board, because it has a lar ge surface
area, absorbs the thermal energy more efficiently, then
distributes this energy to the components. Because of this
effect, the main body of a component may be up to 30
degrees cooler than the adjacent solder joints.

200°C

150°C

100°C

50°C

STEP 1

PREHEAT

ZONE 1
RAMP"

DESIRED CURVE FOR HIGH

TIME (3 TO 7 MINUTES TOTAL)

STEP 2

VENT

SOAK"

MASS ASSEMBLIES

ZONES 2 & 5

150°C

100°C

DESIRED CURVE FOR LOW

HEATING

RAMP"

Figure 13. Typical Solder Heating Profile

STEP 3

ZONES 3 & 6

160°C

140°C

MASS ASSEMBLIES

STEP 4

HEATING

SOAK"

STEP 5

HEATING

ZONES 4 & 7

SPIKE"

170°C

SOLDER IS LIQUID FOR

40 TO 80 SECONDS

(DEPENDING ON

MASS OF ASSEMBLY)

T

MAX

STEP 6

VENT

STEP 7

COOLING

205° TO 219°C

PEAK AT

SOLDER JOINT

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7

0.05 (0.002)

A

L

3

S

12

G

H

MMBT2222AWT1

PACKAGE DIMENSIONS

SC–70/SOT–323

CASE 419–04

ISSUE L

B

D

C

N

NOTES:

1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.

2. CONTROLLING DIMENSION: INCH.

DIM MIN MAX MIN MAX

A 0.071 0.087 1.80 2.20
B 0.045 0.053 1.15 1.35
C 0.032 0.040 0.80 1.00
D 0.012 0.016 0.30 0.40
G 0.047 0.055 1.20 1.40
H 0.000 0.004 0.00 0.10
J 0.004 0.010 0.10 0.25
K 0.017 REF 0.425 REF

J

K

L 0.026 BSC 0.650 BSC
N 0.028 REF 0.700 REF
S 0.079 0.095 2.00 2.40

STYLE 3:

PIN 1. BASE

2. EMITTER

3. COLLECTOR

MILLIMETERSINCHES

Thermal Clad is a registered trademark of the Bergquist Company

ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes
without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular
purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability,
including without limitation special, consequential or incidental damages. “Typical” parameters which may be provided in SCILLC data sheets and/or
specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be
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MMBT2222AWT1/D

8