MM1Z2V0~MM1Z75
Silicon Planar Zener Diodes
Features
• Total power dissipation: max. 500 mW
• Small plastic package suitable for
surface mounted design
• Tolerance approximately ± 5%
Absolute Maximum Ratings (Ta = 25 OC)
Parameter Symbol Value Unit
Power Dissipation
PINNING
PIN
1
2
1
Top View
Simplif ied outline SOD- 123 and symbol
P
500 mW
tot
DESCRIPTION
Cathode
Anode
2
Junction Temperature Tj 150 OC
Storage Temperature Range T
- 55 to + 150
stg
Characteristics at Ta = 25 OC
Parameter
Thermal Resistance Junction to Ambient Air
Forward Voltage
= 10 mA
at I
F
Symbol Max. Unit
R
thA
V
F
340
0.9 V
O
C
O
C/W
Dated：23/03/2012 Rev：01
®
SEMTECH ELECTRONICS LTD.
Subsidiary of Sino-Tech International (BVI) Limited
MM1Z2V0~MM1Z75
Characteristics at Ta = 25 OC
Type
MM1Z2V0 4A 2 1.8...2.15 5 100 5 120 0.5
MM1Z2V2 4B 2.2 2.08...2.33 5 100 5 120 0.7
MM1Z2V4 4C 2.4 2.28...2.56 5 100 5 120 1
MM1Z2V7 4D 2.7 2.5...2.9 5 110 5 120 1
MM1Z3V0 4E 3 2.8...3.2 5 120 5 50 1
MM1Z3V3 4F 3.3 3.1...3.5 5 130 5 20 1
MM1Z3V6 4H 3.6 3.4...3.8 5 130 5 10 1
MM1Z3V9 4J 3.9 3.7...4.1 5 130 5 5 1
MM1Z4V3 4K 4.3 4...4.6 5 130 5 5 1
MM1Z4V7 4M 4.7 4.4...5 5 130 5 2 1
MM1Z5V1 4N 5.1 4.8...5.4 5 130 5 2 1.5
MM1Z5V6 4P 5.6 5.2...6 5 80 5 1 2.5
MM1Z6V2 4R 6.2 5.8...6.6 5 50 5 1 3
MM1Z6V8 4X 6.8 6.4...7.2 5 30 5 0.5 3.5
MM1Z7V5 4Y 7.5 7...7.9 5 30 5 0.5 4
MM1Z8V2 4Z 8.2 7.7...8.7 5 30 5 0.5 5
MM1Z9V1 5A 9.1 8.5...9.6 5 30 5 0.5 6
MM1Z10 5B 10 9.4...10.6 5 30 5 0.1 7
MM1Z11 5C 11 10.4...11.6 5 30 5 0.1 8
MM1Z12 5D 12 11.4...12.7 5 35 5 0.1 9
MM1Z13 5E 13 12.4...14.1 5 35 5 0.1 10
MM1Z15 5F 15 13.8...15.6 5 40 5 0.1 11
MM1Z16 5H 16 15.3...17.1 5 40 5 0.1 12
MM1Z18 5J 18 16.8...19.1 5 45 5 0.1 13
MM1Z20 5K 20 18.8...21.2 5 50 5 0.1 15
MM1Z22 5M 22 20.8...23.3 5 55 5 0.1 17
MM1Z24 5N 24 22.8...25.6 5 60 5 0.1 19
MM1Z27 5P 27 25.1...28.9 5 70 2 0.1 21
MM1Z30 5R 30 28...32 5 80 2 0.1 23
MM1Z33 5X 33 31...35 5 80 2 0.1 25
MM1Z36 5Y 36 34...38 5 90 2 0.1 27
MM1Z39 5Z 39 37...41 2.5 100 2 2 30
MM1Z43 6A 43 40...46 2.5 130 2 2 33
MM1Z47 6B 47 44...50 2.5 150 2 2 36
MM1Z51 6C 51 48...54 2.5 180 2 1 39
MM1Z56 6D 56 52...60 2.5 180 2 1 43
MM1Z62 6E 62 58...66 2.5 200 2 0.2 47
MM1Z68 6F 68 64...72 2.5 250 2 0.2 52
MM1Z75 6H 75 70...79 2.5 300 2 0.2 57
1)
VZ is tested with pulses (20 ms).
2)
ZZT is measured at IZ by given a very small A.C. current signal.
Marking
Code
Zener Voltage Range
V
V
znom
V V mA
at I
ZT
1)
Dynamic Impedance
ZT
ZZT at IZT I
Max. (
Ω)
2)
Reverse Leakage Current
mA Max. (μA) V
at VR
R
Dated：23/03/2012 Rev：01
®
SEMTECH ELECTRONICS LTD.
Subsidiary of Sino-Tech International (BVI) Limited
MM1Z2V0~MM1Z75
Breakdown characteristics
Tj = constant (pulsed)
mA
50
o
Tj=25 C
Iz
40
30
3V9
2V7
4V7
3V3
6V8
8V2
5V6
20
Test current Iz
5mA
10
0
01 23
Breakdown characteristics
Tj = constant (pulsed)
mA
30
Iz
20
Test current Iz
10
5mA
10
12
45 76
15
18
V
Vz
22
8
27
109
o
Tj=25 C
33
0
0
10 20
Vz
30 40
V
600
500
400
300
200
®
SEMTECH ELECTRONICS LTD.
Subsidiary of Sino-Tech International (BVI) Limited
Power Dissipation: Ptot (mW)
100
0
0
25 100
Power Dissipation vs Ambient Tem perature
75
50
Ambient Temperature: Ta ( C)
125
150
O
Dated：23/03/2012 Rev：01
MM1Z2V0~MM1Z75
PACKAGE OUTLINE
Plastic surface mounted package; 2 leads SOD-123
ALL ROUND
∠
c
HH
E
A
D
A
p
E
b
b
0.6
0.5
c
p
0.135
0.100
DEHv
2.7
1.65
2.6
1.55
3.85
3.55
E
UNIT
mm
A
1.15
1.05
0.2
∠
O
5
Dated：23/03/2012 Rev：01
®
SEMTECH ELECTRONICS LTD.
Subsidiary of Sino-Tech International (BVI) Limited
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