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INCHANGE Semiconductor isc Product Specification
isc Silicon NPN Power Transistor MJH16006
DESCRIPTION
· Collector-Emitter Sustaining Voltage : V
CEO(SUS)
·High Switching Speed
APPLICATIONS
·Designed for high-voltage ,high-speed, power switching in
inductive circuits where fall time is critical. They are particularly suited for line operated switch-mode applications.
Typical applications:
·Switching regulators
·Inverters
·Solenoid and relay drivers
·Motor controls
·Deflection circuits
ABSOLUTE MAXIMUM RATINGS(T
SYMBOL PARAMETER VALUE UNIT
= 450V(Min)
=25℃)
a
V
CEV
V
CEO(SUS)
V
EBO
I
I
CM
I
I
BM
P
T
T
C
B
stg
Collector-Emitter Voltage 850 V
Collector-Emitter Voltage 450 V
Emitter-Base Voltage 6 V
Collector Current-Continuous 8 A
Collector Current-Peak 16 A
B Base Current-Continuous 6 A
Base Current-Peak 12 A
Collector Power Dissipation
C
J
=25℃
@T
C
Junction Temperature 150 ℃
Storage Temperature -65~150 ℃
125 W
THERMAL CHARACTERISTICS
SYMBOL PARAMETER MAX UNIT
R
th j-c
Thermal Resistance,Junction to Case 1.0
℃/W
isc Website：www.iscsemi.cn
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INCHANGE Semiconductor isc Product Specification
isc Silicon NPN Power Transistor MJH16006
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified
SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT
V
CEO(SUS)
V
CE
(sat)-
V
CE
(sat)-
V
BE
I
CEV
I
CER
I
EBO
h
FE
C
OB
(sat)
Collector-Emitter Sustaining Voltage IC=100mA ; IB=0 450 V
Collector-Emitter Saturation Voltage IC= 3A; IB= 0.4A B 2.5 V
1
Collector-Emitter Saturation Voltage
2
Base-Emitter Saturation Voltage
Collector Cutoff Current
Collector Cutoff Current
Emitter Cutoff Current VEB= 6V; IC=0 1.0 mA
DC Current Gain IC= 8A ; VCE= 5V 5
Output Capacitance
Switching times;Resistive Load
t
d
Delay Time 20 50 ns
= 5A; IB= 0.66A B
I
C
= 5A; IB= 0.66A,TB
I
C
= 5A; IB= 0.66A B
I
C
IC= 5A; IB= 0.66A,TB
V
=850V;V
CEV
V
=850V;V
CEV
V
= 850V; RBE= 50Ω,TC= 100℃
CE
= 0; VCB= 10V; f
I
E
=100℃
C
=100℃
C
=1.5V
BE
(off)
=1.5V;TC=100℃
BE
(off)
=1.0kHz
test
3.0
3.0
1.5
1.5
0.25
1.5
V
V
mA
2.5 mA
350 pF
t
r
t
s
t
f
Rise Time 85 250 ns
Storage Time 1000 2500 ns
Fall Time
I
= 5A , VCC= 250V; RB2= 4Ω;
C
= 0.66A; IB2= -1.3A;PW= 30μs;
I
B1
Duty Cycle≤2.0%
70 250 ns
isc Website：www.iscsemi.cn
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