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INCHANGE Semiconductor isc Product Specification
isc Silicon NPN Power Transistor MJF13009
DESCRIPTION
·Collector–Emitter Sustaining Voltage
: V
CEO(SUS)
·Collector Saturation Voltage
: V
CE(sat)
·Switching Time
: t
= 0.7μs(Max.)@ IC= 8.0A
f
APPLICATIONS
·Designed for use in high-voltage, high-speed, power switching in inductive circuit, they are particularly suited for
115 and 220V switchmode applications such as switching
regulators,inverters,Motor controls,Solenoid/Relay drivers
and deflection circuits.
ABSOLUTE MAXIMUM RATINGS(T
SYMBOL PARAMETER VALUE UNIT
= 400V(Min.)
= 1.5 (Max) @ IC= 8.0A
=25℃)
a
V
Collector-Emitter Voltage 700 V
CEV
V
CEO
V
EBO
I
C
I
CM
I
B
I
BM
P
T
T
stg
Collector-Emitter Voltage 400 V
Emitter-Base Voltage 9 V
Collector Current-Continuous 12 A
Collector Current-peak 24 A
B Base Current 6 A
Base Current-Peak 12 A
Collector Power Dissipation
C
i
=25℃
T
C
Junction Temperature 150 ℃
Storage Temperature Range -65~150 ℃
50 W
THERMAL CHARACTERISTICS
SYMBOL PARAMETER MAX UNIT
R
th j-c
Thermal Resistance,Junction to Case 2.5 ℃/W
R
th j-a
Thermal Resistance,Junction to Ambient 62.5 ℃/W
isc Website：www.iscsemi.cn
Page 2
INCHANGE Semiconductor isc Product Specification
isc Silicon NPN Power Transistor MJF13009
ELECTRICAL CHARACTERISTICS
TC =25℃ unless otherwise specified
SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT
V
CEO(SUS)
V
CE
(sat)-1
V
CE
(sat)-2
V
CE
(sat)-3
V
BE
(sat)-1
V
BE
(sat)-2
I
CEV
I
EBO
h
FE-1
h
FE-2
f
Collector-Emitter Sustaining Voltage IC= 10mA; IB= 0 400 V
Collector-Emitter Saturation Voltage IC= 5A ;IB= 1A 1.0 V
Collector-Emitter Saturation Voltage IC= 8A ;IB= 1.6A 1.5 V
Collector-Emitter Saturation Voltage IC= 12A ;IB= 3A 3.0 V
Base-Emitter Saturation Voltage IC= 5A ;IB= 1A 1.2 V
Base-Emitter Saturation Voltage IC= 8A ;IB= 1.6A 1.6 V
Collector Cutoff Current
= 700V; V
V
CEV
TC= 100℃
BE(off)
= 1.5V
1
mA
5
Emitter Cutoff Current VEB= 9V; IC= 0 1 mA
DC Current Gain IC= 5A; VCE= 5V 8 40
DC Current Gain IC= 8A; VCE= 5V 6 30
T
Current-Gain—Bandwidth Product IC= 0.5 A; VCE= 10V; 4 MHz
C
OB
Output Capacitance
Switching Times; Resistive Load
t
on
t
s
t
Storage Time 1.1
Storage Time 3.0
Fall Time
f
= 0; VCB= 10V; f
I
E
I
= 8A; VCC= 125V;
C
= IB2= 1.6A; tp= 25μs;
I
B1
test
Duty Cycle≤ 1%
= 0.1MHz
180 pF
μs
μs
0.7
μs
isc Website：www.iscsemi.cn
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