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INCHANGE Semiconductor isc Product Specification
isc Silicon NPN Power Transistor MJE53T
DESCRIPTION
·Collector-Emitter Sustaining Voltage : V
CEO(SUS)
APPLICATIONS
·Designed for high voltage inverters, switching regulators
and line operated amplifier applications. Especially well
suited for switching power supply applications
ABSOLUTE MAXIMUM RATINGS(T
= 350V(Min)
=25℃)
a
SYMBOL PARAMETER VALUE UNIT
V
V
V
I
P
T
CBO
CEO
EBO
I
C
CM
I
B
C
T
J
stg
Collector-Base Voltage 450 V
Collector-Emitter Voltage 350 V
Emitter-Base Voltage 6 V
Collector Current-Continuous 5 A
Collector Current-Peak 10 A
B Base Current-Continuous 2 A
Collector Power Dissipation
=25℃
@ T
C
Junction Temperature 150 ℃
Storage Temperature Range -65~150 ℃
80 W
THERMAL CHARACTERISTICS
SYMBOL PARAMETER MAX UNIT
R
th j-c
Thermal Resistance,Junction to Case 1.56 ℃/W
isc Website：www.iscsemi.cn
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INCHANGE Semiconductor isc Product Specification
isc Silicon NPN Power Transistor MJE53T
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified
SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT
V
CEO(SUS)
V
CE
V
BE
I
CEO
I
CES
I
EBO
h
FE-1
h
FE-2
C
(sat)
(on)
OB
Collector-Emitter Sustaining Voltage IC= 25mA; IB= 0 350 V
Collector-Emitter Saturation Voltage IC= 5A; IB= 2A B 2.0 V
Base-Emitter On Voltage IC= 5A ; VCE= 10V 2.0 V
Collector Cutoff Current VCE= 250V; IB=0 1.0 mA
Collector Cutoff Current VCE= 450V; VBE= 0 1.0 mA
Emitter Cutoff Current VEB= 5V; IC=0 1.0 mA
DC Current Gain IC= 0.3A ; VCE= 10V 30
DC Current Gain IC= 5A ; VCE= 10V 5
Output Capacitance
Switching times
t
on
t
off
Turn-On Time 0.5 μs
Turn-Off T ime
I
= 0 ; VCB= 10V; f
E
I
= 2.5A , IB1= -IB2= 0.5A
C
V
= 5V; VCC= 125V
BE
(off)
test
=0.1MHz
150 pF
2.0 μs
isc Website：www.iscsemi.cn
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