Page 1
INCHANGE Semiconductor isc Product Specification
www.iscsemi.cn
isc Silicon NPN Power Transistor MJE340T
DESCRIPTION
·Collector–Emitter Sustaining Voltage: V
CEO(SUS)
·DC Current Gain: h
FE
·Low Collector Saturation Voltage: V
CE(sat)
APPLICATIONS
·Designed for high voltage and general purpose applications.
ABSOLUTE MAXIMUM RATINGS(T
= 300 V(Min)
= 100(Min) @ IC= 50mA
= 1.0V(Max.)@ IC= 50mA
=25℃)
a
SYMBOL PARAMETER VALUE UNIT
V
Collector-Base Voltage 300 V
CBO
V
CEO
V
EBO
I
C
P
C
T
i
T
stg
Collector-Emitter Voltage 300 V
Emitter-Base Voltage 3 V
Collector Current-Continuous 0.5 A
Collector Power Dissipation
T
=25℃
C
Junction Temperature 150 ℃
Storage Temperature Range -65~150 ℃
20 W
THERMAL CHARACTERISTICS
SYMBOL PARAMETER MAX UNIT
R
th j-c
Thermal Resistance,Junction to Case 6.25
℃/W
isc Website：www.iscsemi.cn
Page 2
INCHANGE Semiconductor isc Product Specification
www.iscsemi.cn
isc Silicon NPN Power Transistor MJE340T
ELECTRICAL CHARACTERISTICS
TC =25℃ unless otherwise specified
SYMBOL PARAMETER CONDITIONS MIN MAX UNIT
V
CEO(SUS)
V
(BR)CBO
V
(BR)EBO
V
CE
I
CBO
I
EBO
h
FE
Collector-Emitter Sustaining Voltage IC= 1.0mA; IB= 0 B 300 V
Collector-Base Breakdown Voltage IC= 1.0mA; IE= 0 300 V
Emitter-Base Breakdown Voltage IE= 1.0mA; IC= 0 3 V
(sat)
Collector-Emitter Saturation Voltage IC= 50mA ;IB= 5mA B 1.0 V
Collector Cutoff Current VCB= 300V; IE= 0 0.1 mA
Emitter Cutoff Current VEB= 3V; IC= 0 0.1 mA
DC Current Gain IC= 50m A ; VCE= 10V 100 240
isc Website：www.iscsemi.cn
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