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INCHANGE Semiconductor isc Product Specification
www.iscsemi.cn
isc Silicon NPN Power Transistor MJE3055
DESCRIPTION
·Collector-Emitter Breakdown Voltage : V
(BR)CEO
·High DC Current Gain: h
= 20-100@IC= 4A
FE
·Complement to Type MJE2955
APPLICATIONS
·Designed for use in general-purpose amplifier and switching
applications.
ABSOLUTE MAXIMUM RATINGS(T
= 60V(Min)
=25℃)
a
SYMBOL PARAMETER VALUE UNIT
V
V
V
P
T
CBO
CEO
EBO
I
C
I
B
C
T
J
stg
Collector-Base Voltage 70 V
Collector-Emitter Voltage 60 V
Emitter-Base Voltage 5 V
Collector Current-Continuous 10 A
B Base Current-Continuous 6 A
Collector Power Dissipation
=25℃
@ T
C
Junction Temperature 150
Storage Temperature Range -55~150
90 W
℃
℃
THERMAL CHARACTERISTICS
SYMBOL PARAMETER MAX UNIT
R
th j-c
Thermal Resistance,Junction to Case 1.39 ℃/W
isc Website：www.iscsemi.cn
Page 2
INCHANGE Semiconductor isc Product Specification
www.iscsemi.cn
isc Silicon NPN Power Transistor MJE3055
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified
SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT
V
(BR)CEO
V
CE
V
CE
V
BE
I
I
I
I
h
h
(sat)-1
(sat)-2
(on)
CEX
CEO
CBO
EBO
FE-1
FE-2
Collector-Emitter Breakdown Voltage IC= 200mA; IB= 0 60 V
Collector-Emitter Saturation Voltage IC= 4A; IB= 0.4A B 1.1 V
Collector-Emitter Saturation Voltage IC= 10A; IB= 3.3A 8.0 V
Base-Emitter On Voltage IC= 4A ; VCE= 4V 1.8 V
Collector Cutoff Current
VCE=70V;V
V
=70V;V
CE
=-1.5V
EB(
)
off
=-1.5V;TC= 150℃
EB(
)
off
1.0
5.0
mA
Collector Cutoff Current VCE= 30V; IB= 0 B 0.7 mA
Collector Cutoff Current
= 70V; IE= 0
CB
VCB= 70V; IE= 0; TC= 150℃
1.0
10
mA
V
Emitter Cutoff Current VEB= 5V; IC= 0 5.0 mA
DC Current Gain IC= 4A ; VCE= 4V 20 100
DC Current Gain IC= 10A ; VCE= 4V 5
f
T
Current Gain-Bandwidth Product IC= 0.5A; VCE= 10V; f= 500kHz 2.0 MHz
isc Website：www.iscsemi.cn
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