Page 1
Features
■ This device is qualified for automotive
application
■ Surface-mounting TO-252 power package in
tape and reel
■ Complementary to the NPN type MJD31C
MJD32CT4-A
Low voltage PNP power transistor
TA B
3
1
Application
■ General purpose linear and switching
equipment
Description
The device is manufactured in planar technology
with “base island” layout. The resulting transistor
shows exceptional high gain performance
coupled with very low saturation voltage.
DPAK
TO-252
Figure 1. Internal schematic diagram
Table 1. Device summary
Order code Marking Package Packaging
MJD32CT4-A MJD32C DPAK Tape and reel
January 2010 Doc ID 13576 Rev 3 1/9
www.st.com
9
Page 2
Electrical ratings MJD32CT4-A
1 Electrical ratings
Table 2. Absolute maximum ratings
Symbol Parameter Value Unit
V
V
V
P
T
Collector-base voltage (IE = 0) -100 V
CBO
Collector-emitter voltage (IB = 0) -100 V
CEO
Emitter-base voltage (IC = 0) -5 V
EBO
I
Collector current -3 A
C
Collector peak current -5 A
I
CM
Base current -1 A
I
B
Total dissipation at Tc = 25 °C 15 W
TOT
Storage temperature -65 to 150 °C
STG
T
Max. operating junction temperature 150 °C
J
Table 3. Thermal data
Symbol Parameter Value Unit
R
R
thJP
1. When mounted on FR-4 board of 1 inch², 2 oz Cu.
Thermal resistance junction-case ________________Max 8.3 °C/W
thJC
(1)
Thermal resistance junction-pcb ________________ Max 50 °C/W
2/9 Doc ID 13576 Rev 3
Page 3
MJD32CT4-A Electrical characteristics
2 Electrical characteristics
T
= 25 °C unless otherwise specified.
case
Table 4. Electrical characteristics
Symbol Parameter Test conditions Min. Typ. Max. Unit
I
CES
I
CEO
I
EBO
V
CEO(sus)
V
CE(sat)
V
BE(on)
h
FE
1. Pulse test: pulse duration ≤ 300 µs, duty cycle ≤ 2 %
Collector cut-off current
(V
= 0)
BE
Collector cut-off current
(IB = 0)
Emitter cut-off current
(IC = 0)
Collector-emitter
(1)
sustaining voltage (IB = 0)
Collector-emitter
(1)
saturation voltage
(1)
Base-emitter on voltage IC = - 3 A _ V
DC current gain
V
= - 100 V - -20 µA
CE
V
= - 60 V - -50 µA
CB
V
= - 5 V - -0.1 mA
EB
= - 30 mA -100 - V
I
C
= - 3 A _ IB = - 375 mA - -1.2 V
I
C
IC = - 1 A _ _ V
IC = - 3 A V
2.1 Electrical characteristic (curves)
Figure 2. Safe operating area Figure 3. Derating curve
= - 4 V - -1.8 V
CE
= - 4 V
CE
= - 4 V2510
CE
50
Doc ID 13576 Rev 3 3/9
Page 4
Electrical characteristics MJD32CT4-A
Figure 4. DC current gain (VCE = - 2 V) Figure 5. DC current gain (VCE = - 4 V)
Figure 6. Collector-emitter saturation
voltage
Figure 7. Base-emitter saturation
voltage
Figure 8. Base-emitter on voltage Figure 9. Resistive load switching time
(on)
4/9 Doc ID 13576 Rev 3
Page 5
MJD32CT4-A Electrical characteristics
Figure 10. Resistive load switching time
(off)
2.2 Test circuits
Figure 11. Resistive load switching test circuit
1. Fast electronic switch
2. Non-inductive resistor
Figure 12. Inductive load switching test circuit
1. Fast electronic switch
2. Non-inductive resistor
3. Fast recovery rectifier
Doc ID 13576 Rev 3 5/9
Page 6
Package mechanical data MJD32CT4-A
3 Package mechanical data
In order to meet environmental requirements, ST offers these devices in different grades of
ECOPACK
specifications, grade definitions and product status are available at: www.st.com.
ECOPACK
®
packages, depending on their level of environmental compliance. ECOPACK®
®
is an ST trademark.
6/9 Doc ID 13576 Rev 3
Page 7
MJD32CT4-A Package mechanical data
TO-252 (DPAK) mechanical data
DIM.
V2 0
mm.
.xampyt.nim
04.202.2A
01.109.01A
32.030.02A
09.046.0b
04.502.54b
06.054.0c
06.084.02c
02.600.6D
01.51D
.6E
06.604
07.41E
82.2e
06.404.41e
01.0153.9H
1L
08.21L
08.02L
106.04L
02.0R
o
o
8
0068772_G
Doc ID 13576 Rev 3 7/9
Page 8
Revision history MJD32CT4-A
4 Revision history
Table 5. Document revision history
Date Revision Changes
01-Jun-2007 1 Initial release.
09-Nov-2009 2 Updated package mechanical data.
14-Jan-2010 3 Modified Table 3 on page 2.
8/9 Doc ID 13576 Rev 3
Page 9
MJD32CT4-A
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Doc ID 13576 Rev 3 9/9
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