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INCHANGE Semiconductor isc Product Specification
isc Silicon NPN Power Transistor MJ8503
DESCRIPTION
· Collector-Emitter Sustaining Voltage : V
CEO(SUS)
·High Switching Speed
APPLICATIONS
·Designed for high-voltage ,high-speed, power switching in
inductive circuits where fall time is critical. They are particularly suited for line operated switch-mode applications.
Typical applications:
·Switching regulators
·Inverters
·Solenoid and relay drivers
·Motor controls
·Deflection circuits
ABSOLUTE MAXIMUM RATINGS(T
SYMBOL PARAMETER VALUE UNIT
= 800V(Min)
=25℃)
a
V
CEV
V
CEO(SUS)
V
EBO
I
I
CM
I
I
BM
P
T
T
C
B
stg
Collector-Emitter Voltage 1400 V
Collector-Emitter Voltage 800 V
Emitter-Base Voltage 8 V
Collector Current-Continuous 5 A
Collector Current-Peak 10 A
B Base Curr ent-Continuous 4 A
Base Current-Peak 8 A
Collector Power Dissipation@TC=25℃ 150 W
C
Junction Temperature 200 ℃
J
Storage Temperature -65~200 ℃
THERMAL CHARACTERISTICS
SYMBOL PARAMETER MAX UNIT
R
th j-c
Thermal Resistance,Junction to Case 1.16
℃/W
isc Website：www.iscsemi.cn
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INCHANGE Semiconductor isc Product Specification
isc Silicon NPN Power Transistor MJ8503
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified
SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT
V
CEO(SUS)
V
CE
(sat)-
V
CE
(sat)-
V
BE
I
CEV
I
CER
I
EBO
h
FE
C
OB
(sat)
Collector-Emitter Sustaining Voltage IC=100mA ; IB=0 800 V
Collector-Emitter Saturation Voltage
1
Collector-Emitter Saturation Voltage IC= 5A; IB= 2A B 5.0 V
2
Base-Emitter Saturation Voltage
Collector Cutoff Current
Collector Cutoff Current
Emitter Cutoff Current VEB= 7.0V; IC=0 1.0 mA
DC Current Gain IC= 1.0A ; VCE= 5V 7.5
Output Capacitance
Switching times;Resistive Load
t
d
Delay Time 40 200 ns
= 2.5A; IB= 1A
I
C
IC= 2.5A; IB= 1A,TC=100℃
= 2.5A; IB= 1A
I
C
IC= 2.5A; IB= 1A,TC=100℃
V
=1400V;V
CEV
V
=1400V;V
CEV
V
= 1400V; RBE= 50Ω,TC= 100℃
CE
= 0; VCB= 10V; f
I
E
=1.5V
BE
(off)
=1.5V;TC=150℃
BE
(off)
=1.0kHz
test
2.0
3.0
1.5
1.5
0.25
5.0
V
V
mA
5.0 mA
60 300 pF
t
r
t
s
t
f
Rise Time 125 2000 ns
Storage Time 1200 4000 ns
Fall Time
I
= 2.5A , VCC= 500V;
C
I
= 1A;tp= 50μs; V
B1
Duty Cycle≤2.0%
BE
(off)
= 5V
650 2000 ns
isc Website：www.iscsemi.cn
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