Page 1
INCHANGE Semiconductor isc Product Specification
www.iscsemi.cn
isc Silicon NPN Power Transistor MJ16002A
DESCRIPTION
· Collector-Emitter Sustaining Voltage : V
CEO(SUS)
·High Switching Speed
APPLICATIONS
·Designed for high-voltage ,high-speed, power switching in
inductive circuits where fall time is critical. They are particularly suited for line-operated switchmode applications.
·Switching regulators
·Inverters
·Solenoid and relay drivers
·Motor controls
·Deflection circuits
ABSOLUTE MAXIMUM RATINGS(T
SYMBOL PARAMETER VALUE UNIT
= 500V(Min)
=25℃)
a
V
CEV
V
CEO(SUS)
V
EBO
I
I
CM
I
I
BM
P
T
T
C
B
stg
Collector-Emitter Voltage 1000 V
Collector-Emitter Voltage 500 V
Emitter-Base Voltage 6 V
Collector Current-Continuous 5 A
Collector Current-Peak 10 A
B Base Curr ent-Continuous 4 A
Base Current-Peak 8 A
Collector Power Dissipation@TC=25℃ 125 W
C
Junction Temperature 200 ℃
J
Storage Temperature -65~200
℃
THERMAL CHARACTERISTICS
SYMBOL PARAMETER MAX UNIT
R
th j-c
Thermal Resistance,Junction to Case 1.4
℃/W
isc Website：www.iscsemi.cn
Page 2
INCHANGE Semiconductor isc Product Specification
www.iscsemi.cn
isc Silicon NPN Power Transistor MJ16002A
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified
SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT
V
CEO(SUS)
V
CE
(sat)-
V
CE
(sat)-
V
BE
I
CEV
I
CER
I
EBO
h
FE
C
OB
(sat)
Collector-Emitter Sustaining Voltage IC=100mA ; IB=0 500 V
Collector-Emitter Saturation Voltage IC=1.5A; IB= 0.2A 1.0 V
1
Collector-Emitter Saturation Voltage
2
Base-Emitter Saturation Voltage
Collector Cutoff Current
Collector Cutoff Current
Emitter Cutoff Current VEB= 6V; IC=0 1.0 mA
DC Current Gain IC= 5A ; VCE= 5V 5
Output Capacitance
Switching times;Resistive Load
t
d
Delay Time 30 100 ns
= 3A; IB= 0.4A B
I
C
= 3A; IB= 0.4A,TB
I
C
= 3A; IB= 0.4A B
I
C
IC= 3A; IB= 0.4A,TB
V
=1000V;V
CEV
V
=1000V;V
CEV
V
= 850V; RBE= 50Ω,TC= 100℃
CE
= 0; VCB= 10V; f
I
E
=100℃
C
=100℃
C
=1.5V
BE
(off)
=1.5V;TC=100℃
BE
(off)
=1.0kHz
test
2.5
2.5
1.5
1.5
0.25
1.5
V
V
mA
2.5 mA
200 pF
t
r
t
s
t
f
Rise Time 100 300 ns
Storage Time 1000 3000 ns
Fall Time
I
= 3A , VCC= 250V; RB2= 8Ω;
C
= 0.4A; IB2= 0.8A;PW= 30μs;
I
B1
Duty Cycle≤2.0%
60 300 ns
isc Website：www.iscsemi.cn
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