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INCHANGE Semiconductor isc Product Specification
www.iscsemi.cn
isc Silicon NPN Power Transistor MJ13334
DESCRIPTION
·Collector-Emitter Sustaining Voltage : V
CEO(SUS)
·High Switching Speed
APPLICATIONS
·Designed for high-voltage ,high-speed, power switching in
inductive circuits where fall time is critical. They are particularly suited for line operated switchmode applications.
·Switching regulators
·Inverters
·Solenoid and relay drivers
·Motor controls
·Deflection circuits
ABSOLUTE MAXIMUM RATINGS(T
SYMBOL PARAMETER VALUE UNIT
= 450V(Min)
=25℃)
a
V
V
V
I
I
P
T
CEV
CEO
EBO
I
C
CM
I
B
BM
T
stg
Collector-Emitter Voltage 750 V
Collector-Emitter Voltage 450 V
Emitter-Base Voltage 6 V
Collector Current-Continuous 20 A
Collector Current-Peak 30 A
B Base Curr ent-Continuous 10 A
Base Current-Peak 15 A
Collector Power Dissipation@TC=25℃ 175 W
C
Junction Temperature 200 ℃
J
Storage Temperature -65~200
℃
THERMAL CHARACTERISTICS
SYMBOL PARAMETER MAX UNIT
R
th j-c
Thermal Resistance,Junction to Case 1.0
℃/W
isc Website：www.iscsemi.cn
Page 2
INCHANGE Semiconductor isc Product Specification
www.iscsemi.cn
isc Silicon NPN Power Transistor MJ13334
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified
SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT
V
CEO(SUS)
V
CE
(sat)-
V
CE
(sat)-
V
BE
I
CEV
I
CER
I
EBO
h
f
C
(sat)
FE
T
OB
Collector-Emitter Sustaining Voltage IC=100mA ; IB=0 450 V
Collector-Emitter Saturation Voltage
1
Collector-Emitter Saturation Voltage IC= 20A; IB=6.7A 5 V
2
Base-Emitter Saturation Voltage
Collector Cutoff Current
Collector Cutoff Current
Emitter Cutoff Current VEB= 6V; IC=0 1 mA
DC Current Gain IC= 5A ; VCE= 5V 10 60
Current Gain-Bandwidth Product
Output Capacitance
Switching times;Resistive Load
= 10A; IB=2A
I
C
IC= 10A; IB=2A,TC=100℃
= 10A; IB= 2A
I
C
IC= 10A; IB= 2A,TC=100℃
V
=450V;V
CEV
V
=450V;V
CEV
V
= 450V; RBE= 50Ω,TC= 100℃
CE
= 0.3A ;VCE= 10V; f
I
C
= 0; VCB= 10V; f
I
E
=1.5V
BE
(off)
=1.5V;TC=150℃
BE
(off)
test
=1kHz
test
=1MHz
1.8
2.4
1.8
1.8
0.25
5.0
V
V
mA
5.0 mA
5 40 MHz
125 500 pF
t
d
t
r
t
s
t
f
Delay Time 0.02 0.1 μs
Rise Time 0.3 0.7 μs
Storage Time 1.6 4.0 μs
Fall Time
= 10A , VCC= 250V; IB1=2A
I
C
= 5V; tp= 10μs;
V
BE
(off)
Duty Cycle≤2.0%
0.3 0.7 μs
isc Website：www.iscsemi.cn
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