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INCHANGE Semiconductor isc Product Specification
isc Silicon NPN Power Transistor MJ13332
DESCRIPTION
·Collector-Emitter Sustaining Voltage : V
CEO(SUS)
·High Switching Speed
APPLICATIONS
·Designed for high-voltage ,high-speed, power switching in
inductive circuits where fall time is critical. They are particularly suited for line operated switch-mode applications.
Typical applications:
·Switching regulators
·Inverters
·Solenoid and relay drivers
·Motor controls
·Deflection circuits
ABSOLUTE MAXIMUM RATINGS(T
SYMBOL PARAMETER VALUE UNIT
= 350V(Min)
=25℃)
a
V
V
V
I
I
P
T
CEV
CEO
EBO
I
C
CM
I
B
BM
T
stg
Collector-Emitter Voltage 650 V
Collector-Emitter Voltage 350 V
Emitter-Base Voltage 6 V
Collector Current-Continuous 20 A
Collector Current-Peak 30 A
B Base Curr ent-Continuous 10 A
Base Current-Peak 15 A
Collector Power Dissipation@TC=25℃ 175 W
C
Junction Temperature 200 ℃
J
Storage Temperature -65~200 ℃
THERMAL CHARACTERISTICS
SYMBOL PARAMETER MAX UNIT
R
th j-c
Thermal Resistance,Junction to Case 1.0
℃/W
isc Website：www.iscsemi.cn
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INCHANGE Semiconductor isc Product Specification
isc Silicon NPN Power Transistor MJ13332
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified
SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT
V
CEO(SUS)
V
CE
(sat)-
V
CE
(sat)-
V
BE
I
CEV
I
CER
I
EBO
h
FE-1
h
FE-2
f
C
(sat)
T
OB
Collector-Emitter Sustaining Voltage IC=100mA ; IB=0 350 V
= 10A; IB= 1.5A
I
Collector-Emitter Saturation Voltage
1
Collector-Emitter Saturation Voltage IC= 20A; IB= 5A 3.5 V
2
Base-Emitter Saturation Voltage
Collector Cutoff Current
Collector Cutoff Current
C
IC= 10A; IB= 1.8A,TC=100℃
= 10A; IB= 1.5A
I
C
IC= 10A; IB= 1.8A,TC=100℃
V
=450V;V
CEV
V
=450V;V
CEV
V
= 450V; RBE= 50Ω,TC= 100℃
CE
=1.5V
BE
(off)
=1.5V;TC=150℃
BE
(off)
5.0 mA
1.5
2.5
1.8
1.8
0.25
5.0
V
V
mA
Emitter Cutoff Current VEB= 6V; IC=0 0.5 mA
DC Current Gain IC= 5A ; VCE= 5V 15 75
DC Current Gain IC= 10A ; VCE= 5V 8
Current Gain-Bandwidth Product
Output Capacitance
= 0.3A ;VCE= 10V; f
I
C
= 0; VCB= 10V; f
I
E
test
=100kHz
test
=1MHz
5 40
100 400 pF
Switching times;Resistive Load
t
d
t
r
t
s
t
f
Delay Time 0.08 0.2 μs
Rise Time 0.55 1.0 μs
Storage Time 0.7 3.5 μs
Fall Time
IC= 10A , VCC= 175V; IB1= 1.5A
V
= 5V; tp= 50μs;
BE
(off)
Duty Cycle≤2.0%
0.11 0.7 μs
isc Website：www.iscsemi.cn
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