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INCHANGE Semiconductor isc Product Specification
isc Silicon NPN Power Transistor MJ12022
DESCRIPTION
·Collector-Emitter Sustaining Voltage : V
CEO(SUS)
·Fast Turn-Off T ime
APPLICATIONS
·Designed for high resolution video systems, such as : high
density graphic displays, data terminals, video scanners.
ABSOLUTE MAXIMUM RATINGS(T
SYMBOL PARAMETER VALUE UNIT
= 450V(Min)
=25℃)
a
V
CEV
V
CEO(SUS)
V
EBO
I
I
CM
I
I
BM
P
T
T
C
B
stg
Collector-Emitter Voltage 850 V
Collector-Emitter Voltage 450 V
Emitter-Base Voltage 6 V
Collector Current-Continuous 15 A
Collector Current-Peak 20 A
B Base Curr ent-Continuous 10 A
Base Current-Peak 15 A
Collector Power Dissipation@TC=25℃
C
Junction Temperature 200
J
Storage Temperature -65~200
THERMAL CHARACTERISTICS
175 W
℃
℃
SYMBOL PARAMETER MAX UNIT
R
th j-c
Thermal Resistance,Junction to Case 1.0 ℃/W
isc Website：www.iscsemi.cn
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INCHANGE Semiconductor isc Product Specification
isc Silicon NPN Power Transistor MJ12022
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified
SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT
V
CEO(SUS)
V
CE
V
BE
I
CEV
I
CER
I
EBO
h
FE
f
C
OB
(sat)
(sat)
T
Collector-Emitter Sustaining Voltage IC=100mA ; IB=0 450 V
Collector-Emitter Saturation Voltage IC= 10A; IB= 2A 1.2 V
Base-Emitter Saturation Voltage IC= 10A; IB= 2A 1.5 V
Collector Cutoff Current
Collector Cutoff Current VCE= 850V; RBE= 50Ω,TC= 100℃ 2.5 mA
Emitter Cutoff Current VEB= 6V; IC=0 1.0 mA
DC Current Gain IC= 15A ; VCE= 5V 5
Current-Gain—Bandwidth Product
Output Capacitance
Switching times;Inductive Load
t
s
t
f
Storage Time 820 1800 ns
Fall Time
V
=850V;V
CEV
V
=850V;V
CEV
I
= 1.3A; VCE= 10V; f
C
I
= 0; VCB= 10V; f
E
= 10A , VCC= 120V; IB1= 2A;
I
C
PW= 8μs; V
=1.5V
BE
(off)
=1.5V;TC=100℃
BE
(off)
test
=1kHz
test
= 4V
BE
(off)
=1MHz
Duty Cycle≤2.0%
0.25
1.5
mA
15 MHz
400 pF
100 300 ns
isc Website：www.iscsemi.cn
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