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INCHANGE Semiconductor isc Product Specification
isc Silicon NPN Power Transistor MJ12003
DESCRIPTION
· Collector-Emitter Sustaining Voltage : V
CEO(SUS)
·High Switching Speed
·Wide Area of Safe Operation
APPLICATIONS
·Designed for use in CRT deflection circuits.
ABSOLUTE MAXIMUM RATINGS(T
SYMBOL PARAMETER VALUE UNIT
= 750V(Min)
=25℃)
a
V
CEX
V
CEO(SUS)
V
EBO
I
I
I
P
T
T
C
B
E
stg
Collector-Emitter Voltage 1500 V
Collector-Emitter Voltage 750 V
Emitter-Base Voltage 5 V
Collector Current-Continuous 4 A
B Base Curr ent-Continuous 3 A
Emitter Current-Continuous 7 A
Collector Power Dissipation@TC=25℃
C
Junction Temperature 150
J
Storage Temperature -65~150
100 W
℃
℃
THERMAL CHARACTERISTICS
SYMBOL PARAMETER MAX UNIT
R
th j-c
Thermal Resistance,Junction to Case 1.25 ℃/W
isc Website：www.iscsemi.cn
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INCHANGE Semiconductor isc Product Specification
isc Silicon NPN Power Transistor MJ12003
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified
SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT
V
CEO(SUS)
V
CE
V
BE
I
CES
I
EBO
h
FE
f
C
OB
t
(sat)
(sat)
T
f
Collector-Emitter Sustaining Voltage IC=50mA ; IB=0 B 750 V
Collector-Emitter Saturation Voltage IC= 3A; IB= 1.2A B 5.0 V
Base-Emitter Saturation Voltage IC= 3A; IB= 1.2A B 1.5 V
Collector Cutoff Current VCE= 1500V; VBE= 0 1.0 mA
Emitter Cutoff Current VEB= 5V; IC=0 1.0 mA
DC Current Gain IC= 0.5A ; VCE= 5V 6
Current-Gain—Bandwidth Product
Output Capacitance
I
= 0.1A; VCE= 5V; f
C
I
= 0; VCB= 10V; f
E
test
=0.1MHz
test
=1.0MHz
4 MHz
90 pF
Fall Time IC= 3A , IB1= 1.2A; LB= 8μH 0.5 1.0 μs
isc Website：www.iscsemi.cn
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