Datasheet MII145-12A3, MDI145-12A3 Datasheet (IXYS)

MII 145-12 A3 MID 145-12 A3

MDI 145-12 A3

IGBT Modules

Short Circuit SOA Capability Square RBSOA

MII

1

7

6

4 5

3

2

Symbol Conditions Maximum Ratings V

CES

V

CGR

V

GES

V

GEM

I

C25

I

C80

I

CM

t

SC

TJ= 25°C to 150°C 1200 V TJ= 25°C to 150°C; RGE = 20 kW 1200 V

Continuous ±20 V Transient ±30 V

TC= 25°C 160 A TC= 80°C 110 A TC= 80°C, tp = 1 ms 220 A

VGE = ±15 V, VCE = V

, TJ = 125°C10ms

CES

(SCSOA) RG= 6.8 W, non repetitive RBSOA V

= ±15 V, TJ = 125°C, RG = 6.8 W ICM = 200 A

GE

Clamped inductive load, L = 100 mHV

P

tot

T

J

T

stg

V

ISOL

M

d

TC= 25°C 700 W

50/60 Hz, RMS t = 1 min 4000 V~ I

£ 1 mA t = 1 s 4800 V~

ISOL

Insulating material: Al2O

3

Mounting torque (module) 2.25-2.75 Nm

(teminals) 2.5-3.7 Nm

d

S

d

A

Creepage distance on surface 12.7 mm Strike distance through air 9.6 mm

a Max. allowable acceleration 50 m/s Weight Typical 130 g

MID

1

3

4 5

2

< V

CEK

MDI

7 6

CES

150 °C

-40 ... +150 °C

20-25 lb.in. 22-33 lb.in.

4.6 oz.

I

C25

V

CES

V

CE(sat) typ.

1

3

2

= 160 A = 1200 V = 2.2 V

3

1

2

Features

●

NPT IGBT technology

●

low saturation voltage

●

low switching losses

●

switching frequency up to 30 kHz

●

square RBSOA, no latch up

●

high short circuit capability

●

positive temperature coefficient for easy parallelling

●

MOS input, voltage controlled

●

ultra fast free wheeling diodes

●

package with DCB ceramic base plate

●

isolation voltage 4800 V

●

UL registered E72873

Advantages

●

space and weight savings

●

reduced protection circuits

Typical Applications

●

AC and DC motor control

●

AC servo and robot drives

●

power supplies

●

welding inverters

2

4

5

E 72873

6

7

Data according to a single IGBT/FRED unless otherwise stated.

030

1 - 4

MII 145-12 A3 MID 145-12 A3

MDI 145-12 A3

Symbol Conditions Characteristic Values

(TJ = 25°C, unless otherwise specified)

min. typ. max.

V

(BR)CES

V

GE(th)

I

CES

VGE = 0 V 1200 V IC = 4 mA, VCE = V VCE= V

CES

GE

TJ = 25°C6mA

4.5 6.5 V

TJ = 125°C9mA

I

GES

V C

C C

t

d(on)

t

r

t

d(off)

t

f

E E

R R

CE(sat)

ies

oes

res

on

off

thJC

thJS

VCE= 0 V, VGE = ±20 V ±400 nA IC = 100 A, VGE = 15 V 2.2 2.7 V

6.5 nF

VCE = 25 V, VGE = 0 V, f = 1 MHz 1 nF

0.5 nF

100 ns

Inductive load, T

= 100 A, VGE = ±15 V

I

C

= 125°C

J

VCE = 600 V, RG = 6.8 W

60 ns

600 ns

90 ns 16 mJ 15 mJ

0.18 K/W

with heatsink compound 0.36 K/W

Dimensions in mm (1 mm = 0.0394")

Reverse Diode (FRED) Characteristic Values

= 25°C, unless otherwise specified)

(T

J

min. typ. max.

V

F

IF = 100 A, VGE = 0 V, 2.4 2.6 V IF = 100 A, VGE = 0 V, TJ = 125°C 1.9 2.0 V

I

F

TC = 25°C 150 A TC = 80°C95A

I

RM

t

rr

R

thJC

R

thJS

IF = 100 A, VGE = 0 V, -diF/dt = 600 A/ms62A TJ = 125°C, VR = 600 V 200 ns

0.45 K/W

with heatsink compound 0.9 K/W

Equivalent Circuits for Simulation

Conduction

IGBT (typ. at VGE = 15 V; TJ = 125°C)

V0 = 1.3 V; R0 = 12.0 mW

Free Wheeling Diode (typ. at TJ = 125°C)

Thermal Response

IGBT (typ.)

V0 = 1.3 V; R0 = 6.5 mW

C

= 0.25 J/K; R

th1

C

= 0.58 J/K; R

th2

= 0.175 K/W

th1

= 0.004 K/W

th2

Free Wheeling Diode (typ.)

C

= 0.14 J/K; R

th1

C

= 0.26 J/K; R

th2

= 0.443 K/W

th1

= 0.009 K/W

th2

2 - 4

MII 145-12 A3 MID 145-12 A3

MDI 145-12 A3

250

TJ = 25°C

A

200

I

C

150

100

50

0

0.0 0.5 1.0 1.5 2.0 2.5 3.0

VGE=17V

15V

13V 11V

9V

V

CE

250

T

= 125°C

J

A

200

I

C

150

100

50

0

0.00.51.01.52.02.53.03.5

Fig. 1 Typ. output characteristics Fig. 2 Typ. output characteristics

250

VCE = 20V

A

= 25°C

T

J

200

I

C

150

100

300

A

250

I

F

200

150

100

= 125°C

T

J

VGE=17V

15V 13V

11V

9V

V

CE

TJ = 25°C

50

0

567891011

V

GE

V

50

0

01234

Fig. 3 Typ. transfer characteristics Fig. 4 Typ. forward characteristics of

free wheeling diode

20

VCE = 600V

V

= 100A

I

C

15

V

GE

10

5

0

0 100 200 300 400 500

Q

nC

G

120

A

I

RM

t

rr

80

40

I

RM

0

0 200 400 600 800 1000

Fig. 5 Typ. turn on gate charge Fig. 6 Typ. turn off characteristics of

free wheeling diode

V

F

TJ = 125°C V

= 600V

R

I

= 100A

F

-di/dt

A/ms

V

145-12

300

ns

200

100

0

t

rr

3 - 4

MII 145-12 A3 MID 145-12 A3

MDI 145-12 A3

40

mJ

30

E

on

20

10

0

0 50 100 150 200

Fig. 7 Typ. turn on energy and switching Fig. 8 Typ. turn off energy and switching

times versus collector current times versus collector current

50

V

= 600V

CE

mJ

40

E

on

30

= ±15V

V

GE

= 100A

I

C

T

= 125°C

J

t

d(on)

E

on

I

C

t

r

VCE = 600V

= ±15V

V

GE

R

= 6.8

W

G

TJ = 125°C

E

t

d(on)

t

r

120

ns

90

t

60

30

0

A

300

on

ns

240

t

180

40

mJ

30

E

off

20

10

0

0 50 100 150 200

25

V

= 600V

CE

mJ

20

E

off

= ±15V

V

GE

I

= 100A

C

= 125°C

T

J

15

I

C

VCE = 600V

= ±15V

V

GE

R

= 6.8

G

TJ = 125°C

t

E

t

d(off)

f

t

E

off

W

A

d(off)

off

800

ns

600

t

400

200

0

1500

ns

1200

t

900

20

10

0

0 8 16 24 32 40 48 56

Fig. 9 Typ. turn on energy and switching Fig.10 Typ. turn off energy and switching

times versus gate resistor times versus gate resistor

240

A

200

I

CM

160

120

RG = 6.8

= 125°C

T

J

< V

V

CEK

W

CES

80

40

0

0 200 400 600 800 1000 1200

Fig. 11 Reverse biased safe operating area Fig. 12 Typ. transient thermal impedance

RBSOA

120

60

0

W

R

G

10

5

0

0 8 16 24 32 40 48 56

R

G

600

300

t

f

0

W

1

K/W

0.1

Z

thJC

0.01

diode

IGBT

0.001

0.0001

0.00001

V

CE

0.00001 0.0001 0.001 0.01 0.1 1

single pulse

145-12

s

t

4 - 4

Datasheet MII145-12A3, MDI145-12A3 Datasheet (IXYS)

Specifications and Main Features

Frequently Asked Questions

User Manual