Page 1
GaAs HIGH POWER T-1 3/4 PACKAGE
INFRARED EMITTING DIODE
MIE-544A4
Description Package Dimensions
P
Unit: mm(inch)
(.100)
(.300)
FLAT DENOTES CATHODE
(.230)
(.215)
SEE NOTE 3
The MIE-544A4 is an infrared emitting diode utilizing
φ 5.05
(.199)
GaAs with AlGaAs window coating chip technology.
It is molded in water clear plastic package.
7.62
1.00
SEE NOTE 2
Features
23.40 MIN.
l High radiant power and high radiant intesity
l Suitable for DC and high pulse current operation
l Standard T-1 3/4 ( φ5mm) package, radiant angle : 40°
l Peak wavelength λ
l Good spectral matching to si-photodetecto
=940 nm
0.50 TYP.
(.020)
2.54 NOM.
(.921)
1.00MIN.
(.039)
5.47
5.90
Absolute Maximum Ratings
Parameter Maximum Rating Unit
Power Dissipation 100 mW
Peak Forward Current 1 A
Continuous Forward Current 50 mA
Reverse Voltage 5 V
Operating Temperature Range
Storage Temperature Range
Lead Soldering Temperature
A
Notes :
1. Tolerance is ±0.25 mm (.010") unless otherwise noted.
2. Protruded resin under flange is 1.5 mm (.059") max.
3. Lead spacing is measured where the leads emerge from the package.
C
@ TA=25oC
o
C to +100oC
o
C to +100oC
o
C for 5 seconds
Unity Opto Technology Co., Ltd.
11/17/2000
Page 2
MIE-544A4
Optical-Electrical Characteristics
F
1/2
Typical Optical-Electrical Characteristic Curves
FIG.1 SPECTRAL DISTRIBUTION
Output Power Relative To
70°
60°
50°
80°
40°
Parameter Test Conditions Symbol Min. Typ . Max. Unit
Radiant Intensity IF=20mA Ie 1.0 2.0 mW/sr
Forward Voltage IF=50mA V
Reverse Current VR=5V I
Peak Wavelength IF=20mA λ 940 nm
Spectral Bandwidth IF=20mA ∆λ 50 nm
View Angle IF=20mA 2θ
@ TA=25oC
1.30 1.5 V
R
100
40 deg .
µA
1
0.5
0
Relative Radiant Intensity
840 940 1040
Wavelength (nm)
100
80
60
40
20
0
Forward Current (mA)
0 1.2 1.6 2.0 2.4 2.8
Forward Voltage (V)
FIG.3 FORWARD CURRENT VS.
FORWARD VOLTAGE
5
4
3
=20mA
F
2
1
0
Value at I
0 20 40 60 80 100
Forward Current (mA)
FIG.5 RELATIVE RADIANT INTENSITY
VS. FORWARD CURRENT
60
50
(mA)
F
40
30
20
10
0
-55 -25 0 25 50 75 100 125
Forward Current I
Ambient Temperature TA (oC)
FIG.2 FORWARD CURRENT VS.
=20mA
F
Output Power To Value I
AMBIENT TEMPERATURE
3
2.5
2
1.5
1
0.5
0
-40 -20 0 20 40 60
Ambient Temperature TA(oC)
FIG.4 RELATIVE RADIANT INTENSITY
0° 10° 20°
30°
1.0
0.9
0.8
0.5 0.3 0.1 0.2 0.4 0.6
Relative Radiant Intensity
90°
FIG.6 RADIATION DIAGRAM
Unity Opto Technology Co., Ltd.
11/17/2000
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