
Description Package Dimensions
The MIE-384A4 is an infrared emitting diode utilizing
GaAs with AlGaAs window coating chip technology.
It is molded in water clear plastic package.
SEE NOTE 2
4.6±0.30
(.181)
3.1±0.20
(.122)
Features
l High radiant power and high radiant intensity
l Suitable for DC and high pulse current operation
l Special T-1 ( φ 3mm ) package
l Peak wavelength λ
l Good spectral matching to si-photodetector
l Radiant angle : ±14°
= 940 nm
p
.50 TYP.
2.54
(.100)
A
Unit : mm (inches )
2.5
2.5
(.10)
23.40MIN.
(.920)
1.00MIN.
(.040)
C
5.7
5.7
(.224)
Absolute Maximum Ratings
Parameter Maximum Rating Unit
Power Dissipation 120 mW
Peak Forward Current 1 A
Continuous Forward Current 100 mA
Reverse Voltage 5 V
Operating Temperature Range
Storage Temperature Range
Lead Soldering Temperature
Notes :
1. Tolerance is ± 0.25 mm (.010") unless otherwise noted.
2. Protruded resin under flange is 0.4 mm (.0157") max.
3. Lead spacing is measured where the leads emerge from the package.
@ TA=25oC
-55oC to +100oC
-55oC to +100oC
260oC for 5 seconds
Unity Opto Technology Co., Ltd.
02/04/2002

Optical-Electrical Characteristics
Parameter Test Conditions Symbol Min. Typ . Max. Unit
Radiant Intensity
Forward Voltage
Reverse Current
Peak Wavelength
Spectral Bandwidth
View Angle
IF=20mA
IF=50mA V
VR=5V I
IF=20mA
IF=20mA
IF=20mA 2θ
Ie 2.0
F
R
λp
∆λ
1/2
Typical Optical-Electrical Characteristic Curves
1
0.5
Relative Radiant Intensity
0
840 940 1040
Wavelength (nm)
Wavelength (nm)
FIG.1 SPECTRAL DISTRIBUTION
FIG.1 SPECTRAL DISTRIBUTION
100
100
80
80
60
60
40
40
20
20
Forward Current (mA)
Forward Current (mA)
0
0
0.8 1.2 1.6 2.0 2.4 2.8
0.8 1.2 1.6 2.0 2.4 2.8
Forward Voltage (V)
Forward Voltage (V)
FIG.2 FORWARD CURRENT VS.
FIG.2 FORWARD CURRENT VS.
FORWARD VOLTAGE
FORWARD VOLTAGE
5
4
3
=20mA
F
2
@ TA=25oC
-
-
- -
-
-
-
3.0
3.0
=20mA
=20mA
2.5
2.5
F
F
2.0
2.0
1.5
1.5
1.0
1.0
0.5
0.5
0.0
0.0
-40 -20 0 20 40 60
-40 -20 0 20 40 60
Output Power To Value I
Output Power To Value I
FIG.3 RELATIVE RADIANT INTENSITY
FIG.3 RELATIVE RADIANT INTENSITY
VS. AMBIENT TEMPERATURE
VS. AMBIENT TEMPERATURE
1.0
0.9
1.3 1.5 V
100
940
50
28
Ambient Temperature TA (oC)
Ambient Temperature TA (oC)
-
-
-
0° 10° 20°
mW/sr
µA
nm
nm
deg .
30°
40°
50°
Unity Opto Technology Co., Ltd.
1
Value at I
Output Power Relative To
0
0 20 40 60 80 100
Forward Current (mA)
FIG.4 RELATIVE RADIANT INTENSITY
0.8
Relative Radiant Intensity
0.5 0.3 0.1 0.2 0.4 0.6
FIG.5 RADIATION DIAGRAM
02/04/2002