Datasheet MI2303 Datasheet (MegaPower) [ru]

P-Channel 20V (D-S)MOSFET

MI2303

General Description

This miniature surface monut MOSFET u ses
advanced trench process, lo w RDS(on) a ssu res

minimal po wer loss and energy c onv ers ion ,which
ma kes th is de vice i deal f or us e in po wer
management circuit.

Applications

Load switch
DC-D C con ver ter s

Power management

D

S

G

SOT23

Features

VD S (V) = -20V

ID (A) = -3.3A (VG S = -4. 5V)

RD S(on) = 8 5 mΩ @ VGS = -4.5V

RD S(on) = 9 5 mΩ @ VGS = -2. 5V

RD S(on) = 120 mΩ @ VGS = -1.8 V

Low gate charge

Fast switching speed

D

G

S

Absolute Maximum Ratings (TA = 25℃ Unless Otherwise Not ed)

Parameter

Drain-Source Voltage

Gate-Source Voltage

Continuous Drain Current

Pulsed Drain Current

Continuous Source Current (Di ode C ond uct ion )

Power Dissipation

Operating Junction and Storag e Temperature Range

a

b

a

a

TA =25℃

TA =70℃

TA =25℃

TA =70℃

Symbol

VD S

VG S

ID

ID M

IS

PD

TJ ,Tstg

Thermal Resistance Ratings

Symbol

θ

R JA

Maximum Junction-to-Ambient

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Parameter

a

t<= 10 sec

Steady-State

1

Maximum Units

-20

±8

-3.3

-2.6

V

A

-13

-1.0

1. 4

1. 0

-55 to 150

Maximum

90

130

Feb.20 12 Re v.2.0

A

W

℃

Units

℃/W

Ordering Information

MI2303

Device

MI2303

Device Marking

MPAS

Reel Size

7’’

Specifications (TA = 25℃ Unless Otherwise Noted)

Parameter

Static

Drain-Source Breakdown Voltage

Gate-Threshold Voltage

Gate-Body Leakage

Zero Gate Voltage Drain Current

On-State Drain Current

c

Drain-Source On-Resistance

Forward Tranconductance

c

Diode Forward Voltage

Dynamic

Input Capacitance

Output Capacitance

Reverse Tra nsf er Ca pac ita nce

c

Symbol

V( BR)D SS

VG S(th )

IG SS

ID SS

ID (on)

RD S(o n)

g

fs

VS D

Ci ss

Co ss

Cr ss

Test Conditions

VG S=0V,ID=-250uA

VD S =VGS,ID = -250 u A

VD S=0V,VGS=±12V

VDS=-20V,VGS=0V

VDS=-20V,VGS=0V,TJ=55℃

VDS=-5V,VGS=-4.5V

VGS=-4.5V,ID=-4.4A

VGS =-2. 5 V, ID=- 2.0A

VGS =-1.8 V, ID=- 1.0A

VD S=-5V,ID =-2.8A

IS =-1.0A,VGS=0 V

VD S=-10V,VGS=0 V

f=1MHz

Tape Width

8mm

Limits

Min Typ Max

-20

-0.45

-0.61

-13

35

45

60

16

-0.7

1020

191

140

Quantity

3000 units

-0.9

±100

-1

-10

50

65

75

-1.2

Units

V

nA

uA

A

mΩ

S

V

pF

Switching

Total Gate Charge

Gate Sourse Charge

Gate Drain Charge

Tur n-O n Del ay Tim e

Rise Time

Tur n-O ff Delay Time

Fall-Time

Notes: a . Sur face Moun ted on 1” x 1” FR 4 Boa rd.
b. Pulse w idt h limited b y maximum j unc tion temp erature

c. Pulse t est : PW <= 300us d uty cycle < = 2%.

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Qg

Qg s

Qg d

td (on)

tr

td (off)

tf

RG=6ohm,VGEN=-4.5V

VG S=-4.5V,
VD S=-10V,
ID =-3.3A

VDD=-10V,

RL=10ohm

2

12

1. 7

3. 2

25

42

70

47

19

nC

40

63

ns

110

74

Feb.20 12 Re v.2.0

Typical Electrical and Thermal Ch aracteristics

MI2303

20

VGS =- 2.5V, -3V ,- 3. 5V, -4V,- 4. 5V, -5 V

16

12

8

-ID - Dra in Curren t(A )

4

1

0

0 1 2 3 4 5

Figure 1 . On- Reg ion C haracte ristics

150

120

90

VGS =- 1.8V

60

VGS =- 2.5V

-2V

-1.5 V

20

16

12

8

-ID - Dra in Curren t(A )

4

0

0 0.5 1 1.5 2 2 .5

Tc=-55 ℃

25℃

125℃

-VGS( Volts)-VDS Dra in -to-So urc e Voltage( V)

Figure 2 . Tran sfer Char acteris tic s

150

120

90

60

ID= -2A

ID= -4.4 A

30

RD S(on ) On-R esistan ce( mΩ)

0

-VGS Ga te-to-S ource Volt age (V)

Figure 3 . On- Resi sta nce vs. Dra in Curren t and

1. 5

1. 4

1. 3

1. 2

1. 1

1. 0

0. 9

0. 8

RD S(on ) On-Resi stance

(Norma liz ed)

0. 7

0. 6

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VG S =-4 .5V
ID =-4. 4A

-50 -2 5 0 25 50 75 100 12 5 150

Figure 5 . On- Resi sta nce Var iation wi th

Gate Volt age

TJ - Junct ion Tem peratur e( )℃

Temperat ure

VGS =- 4.5V

30

RD S(on ) On-R esistan ce( mΩ)

0

0 1 2 3 4 5

Figure 4 . On Re sistanc e vs. Gate- to-So urce

20

10

1

IS -Sour ce Cu rrent(A )

0. 1
0 0. 2 0. 4 0.6 0 .8 1.0 1. 2

Figure 6 : Sou rce-Dra in Forwar d Volt age

3

-ID - Drai n Cur rent(A)

Voltage

TJ= 125℃

TJ= 25℃

VS D Sour ce -to-Dr ain Vo ltage(V )

Feb.20 12 Re v.2.0

Typical Electrical and Thermal Ch aracteristics

MI2303

5

VD S=- 4.5V

4

ID= -4.4 A

3

2

1

-VGS, Gat e-t o-Sour ce Vol tage(V )

0

0 1 2 3 4 5

Qg- Total Gat e Charge( nC)

Figure 7. Gat e Charge

100.0

T

=150°C

J(M ax)

T A =25°C

10.0

R

DS( ON)

100 µ s

limited

1ms

(A mps )

D

I

1.0

0.1s
10ms

1s

10s

0.1

0.1

1 1

DC

0 100

VDS (Volts)

Figure 9 : Max imum Forw ard Biase d Saf e

Operat ing Ar ea (Note d)

10

t
n

ie
n

a

e
c

ive r s
t T

e n

c

p da

e
f

e

f

d
l

E
e

ma
r

z d

0.1

e
h

T

ma i

Nor l

1

D=T on/T

T

J,P K=TA +PDM

Rθ JA=130 W℃/

.

Z

JA

θ

1800

1500

1200

Ci ss

900

600

Capaci tan ce(pF)

300

Co ss

Cr ss

0

0 4 8 12 16 20

VD S Drai n-t o-Sour ce Vol tage(V )

Figure 8 :Ca pacitan ce

40

T

30

)

W

(

r

20

e
w

o
P

T A =25°C

10

0

0.001 0.0 1 0.1

1 1

Pulse Wi dth ( s)

Figure 1 0: Si ngle Puls e Power Rat ing J unction -to-

Ambien t (No te d)

In desce ndi ng order
D=0.5, 0 .3, 0 .1, 0.05, 0 .02, 0.01 , single pu lse

P

D

T

o n

T

=150°C

J(M ax)

0 100 1000

0.01

0.00001 0.0001 0.001 0.01 0.1 1 1 0 100 1000

Pulse Wi dth ( s)

Figure 11 : Normali zed Maxim um Tra nsient Therma l Imp edance

Note d:

These te sts a re perfor med with th e device mo unt ed on 1 in FR -4 bo ard with 2o z. Copper, i n a sti ll air envi ronment w ith

T A=25 °C. The SOA cu rve provi des a s ingle pul se rating .

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2

4

Feb.20 12 Re v.2.0

Package Outline

SOT23_3Lead

MI2303

D

3

1 2

e

e1

T OP VIEW

E1 E

Unit: mm

S ymbol Min Nom Max

A 0.70 1.15

A1 0. 00

b 0.30 0.50

c 0.20

0.08

D 2.80 3 .10

E 2.60 3.00

E1 1. 40 1 .80

1.00

---

0.40

0.13

2.90

2.80

1.60

0.13

e 0.95 BSC

e 1 1 .90 B SC

L 0.40 REF

L 1 0.54 REF

0 º º

θ

8 º

5

A

b

A1

SIDE VIEW

Notes:

(1) All dimensions are in m ill ime ters.Angles in degre es.
(2)

Package body sizes exclude m old flash and gate burrs.

(3)

Complies with JEDEC TO-236.

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θ

L1 L

END VIEW

Doc.SOT23_3L-071012

5

Feb.20 12 Re v.2.0

c