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N-Channel 20V (D-S)MOSFET
General Description
This miniature surface mount MOSFET uses ad vanced
Trench process,low RDS(ON ) assures minimal power
lo ss and ene rgy co nvert , wh ich m akes t his de vice
ideal f or u se i n p ower m anagement c ircuit.
Applications
Load switching
Low current DC-DC co nve rte rs
Small power management
MI3474
Features
VD S (V)=20V
ID (A)=5.6A(VGS=10V)
RD S(on) = 28 mΩ @ VGS=10V
RD S(on) = 40 mΩ @ VGS=4.5V
RD S(on) = 53 mΩ @ VGS=2.5V
RD S(on) = 110 m Ω @ VGS =1.8V
ESD Rating:3000V HBM
Low gate charge
Fast switching speed
High performance trench techn olo gy
D
.
.
G
Top Vi ew
Absolute Maximum Ratings (TA = 25℃ Unless Otherwise Not ed)
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
Pulsed Drain Current
Continuous Source Current (Di ode C ond uct ion )
Power Dissipation
Operating Junction and Storag e Temperature Range
a
b
a
a
TA =25℃
TA =70℃
TA =25℃
TA =70℃
Symbol
VD S
VG S
ID
ID M
IS
PD
TJ ,Tstg
Thermal Resistance Ratings
Symbol
R θJA
Maximum Junction-to-Ambie nt
Parameter
a
t<= 10 sec
Steady-State
S
Maximum Units
20
±12
5.6
4.4
23
4.2
1.4
0.9
-55 to 150
Maximum
90
130
V
A
A
W
℃
Units
℃/W
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Feb.20 12 Re v.2.0
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Package Outlines and Ordering Information
Device
MI3474
Device Marking
M05S
Reel Size
7’’
Specifications (TA = 25℃ Unless Otherwise Noted)
Parameter
Static
Drain-Source Breakdown Voltage
Gate-Threshold Voltage
Gate-Body Leakage
Zero Gate Voltage Drain Current
On-State Drain Current
Drain-Source On-Resist anc e
Forward Tranconductance
Diode Forward Voltage
Dynamic
Input Capacitance
Output Capacitance
Reverse Tra nsf er Ca pac ita nce
Switching
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Tur n-O n Del ay Tim e
Rise Time
Tur n-O ff Delay Time
Fall-Time
Notes: a . Sur face Moun ted on 1” x 1” FR 4 Boa rd.
b. Pulse w idt h limited b y maximum j unc tion temp erature
c. Pulse t est : PW <= 300us d uty cycle < = 2%.
c
c
c
Symbol
V( BR)D SS
VG S(th )
IG SS
ID SS
ID (on)
RD S(on )
g
fs
VS D
Ci ss
Co ss
Cr ss
Qg
Qg s
Qg d
td (on)
tr
td (off)
tf
Test Conditions
VG S=0V,ID=250uA
VD S =VGS,ID = 2 50 uA
VD S=0V,VGS=±12V
VDS=20V,VGS=0V
VDS=20V,VGS=0V,TJ=85℃
VDS=5V,VGS=4.5V
VGS=10V,ID=5.5A
VGS=4.5V,ID=3A
VGS =2. 5 V, ID=2 A
VGS =1. 8 V, ID=0 .6A
VD S=5V,ID=5.5A
IS =1. 2A,VGS =0V
VD S=10V,VGS=0V
f=1MHz
VD S=10V,VG S=4. 5V
ID =5. 5A
VDS=10V, ID=1.0A,
RG=6 ohm,VGEN=4.5V
Tape Width
8mm
Limits
Min Typ Max
20
0. 5
0. 75
22
24
30
38
64
15
0.7
425
105
85
0.7
2.8
4.5
14.8
26
13
MI3474
Quantity
3000 units
Units
1
±10
1
30
28
40
53
110
1. 3
5
10
7.5
10
28
48
28
V
uA
uA
A
mΩ
S
V
pF
nC
ns
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Feb.20 12 Re v.2.0
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Typical Electrical and Thermal Ch aracteristics
MI3474
20
18
16
VGS =2.5,3 ,4, 5, 6, 7,8 ,9,10
14
12
10
2V
8
ID -Dr ain Curre nt( A)
6
4
2
0
0. 0 0. 5 1.0 1 .5 2.0 2. 5 3. 0
VD S Drai n-to -Source Vo ltag e(V)
Figure 1: Out put Chara cter istics
1. 5V
160
140
VGS =1.8V
120
100
80
60
40
RD S(on)- On -Resi stance( mΩ)
20
0
0 2 4 6 8 10 12 14 16 18
ID - Drai nCur rent (A)
Figure 3 : On-R esistan ce vs Dr ain Curre nt
VGS =2.5V
VGS =4.5V
VGS =10V
1. 6
1. 4
ID= 250 uA
1. 8
VGS =10V
1. 6
IDS =5A
1. 4
1. 2
1. 0
0. 8
0. 6
RD S(ON) -On Re sist ance
(Norma lize d)
0. 4
0. 2
0
-50 -25 0 25 5 0 75 10 0 125 150
TJ -Jun ctio n Tem peratur e(℃)
Figure 2 : On-R esistan ce vs. Junctio n Tem pera ture
80
70
RON @Tj= 25℃;2 4mΩ
ID= 5.5 A
65
60
mΩ)
55
(
e
cR
50
an
t
45
is
s
e
40
R
n
35
-O
)
30
ON
(
S
D
25
20
15
0 1 2 3 4 5 6 7 8 9 10
VGS G ate-to- Sour ce Voltage (V)
Figure 4 : On-R esis tance vs. Gate -to- Sou rce Vol tage
10
1. 2
1. 0
0. 8
0. 6
VGS (th) Var iance(V )
0. 4
0. 2
0. 0
-50 -25 0 25 5 0 75 10 0 125 150
Figure 5 : Thre shol d Voltage
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TJ- Tempe ratu er(℃)
Tj= 150℃
1
Is-Sou rce Cu rren t(A)
0. 1
0 0. 2 0. 4 0.6 0 .8 1.0 1. 2 1. 4 1.6
VSD - Sou rce- to-D rain Volta ge(V )
Figure 6 : Sour ce-D rain Diod e Forw ard Vol tag e
Tj= 25℃
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Feb.20 12 Re v.2.0
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Typical Electrical and Thermal Ch aracteristics
MI3474
t
n
ie
n
a
ive r s
t T
c
e
f
f
E
e
z d
ma i
Nor l
10
VD S=10V
9
ID= 5.5 A
VV G e o o
8
(
ag
7
t e )
l
6
e Vo
c
5
S ur
-
4
t
-
t
3
a
S
2
G
1
0
0 2 4 6 8 10 12
Qg-Total G ate Ch arge(nC )
Figur 7 :G ate Ch ange
100.0
T
=150°C
J(M ax)
T A =25°C
10.0
DS( ON)
R
limited
(A mps )
D
I
1.0
0.1s
10ms
1s
10s
0.1
0.1
1 1
DC
VDS (Volts)
Figure 9 : Max imum Forw ard Biase d Saf e
Operat ing Ar ea (Note d)
10
D=T on/T
.
T
J,P K=TA +PDM
e
c
e n
p da
e
d
l
ma
r
0.1
e
h
T
1
Rθ JA=130 W℃/
Z
JA
θ
100us
1ms
0 100
700
600
Freque ncy =1MHz
500
400
Ciss
300
Capaci tanc e(pF )
200
100
Coss
Crss
0
0 4 8 12 16 20
VD S Dain -to- Source Vol tage (V)
Figure 8 : Capa citance
40
T
30
)
W
(
r
20
e
w
o
P
T A =25°C
10
0
0.001 0. 01 0.1
1 1
Pulse Wi dth ( s)
Figure 1 0: Si ngle Puls e Power Rat ing J unction -to-
Ambien t (No te d)
In desce ndi ng order
D=0.5, 0 .3, 0 .1, 0.05, 0 .02, 0.01 , single pu lse
P
D
T
o n
T
=150°C
J(M ax)
0 100 1000
0.01
0.00001 0.0001 0.001 0.01 0.1 1 1 0 100 1000
Pulse Wi dth ( s)
Figure 11 : Normali zed Maxim um Tra nsient Therma l Imp edance
Note d:
T A=25 °C. The SOA cu rve provi des a s ingle pul se rating .
These te sts a re perfor med with th e device mo unt ed on 1 in FR -4 bo ard with 2o z. Copper, i n a sti ll air envi ronment w ith
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Feb.20 12 Re v.2.0
Page 5
Package
SOT -23 3-Lead
MI3474
D
3
1 2
e
e1
T OP VIEW
E1 E
A
SYMBOL MIN NOM MAX
A 0.70 1.15
1.00
A1 0.00 0.13
b 0.30 0.50
c 0.20
0.08
D 2 .80 3.10
E 2.60 3.00
E1 1 .40 1.80
0.40
0.13
2.90
2.80
1.60
e 0.95 BSC
e 1 1 .90 B SC
L 0.400 REF
L 1 0.540 REF
0 º 8 º
θ
θ
5º
b
A1
SIDE VIEW
Notes:
(1) All dimensions are i n mil lim eters. Angles in degre es.
(2) Complies with JEDE C TO -23 6.
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L1 L
END VIEW
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Feb.20 12 Re v.2.0
c
Doc.SOT233-090701
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