Datasheet MDV1526 Datasheet (Mosfet)

Absolute Maximu

m Ratings (Ta = 25

o

C)

Thermal Characteristics

Features

General Description

D

S

S S G G S S S

D D D D

Single N-channel Trench MOSFET 30V, 24A, 11mΩ

The MDV1526 uses advanced MagnaChip’s MOSFET
Technology, which provides high performance in on-state
resistance, fast switching performance and excellent
quality. MDV1526 is suitable for DC/DC converter and
general purpose applications.

D D D D

S

PDFN33

MDV1526 – Single N-Channel Trench MOSFET 30V

MDV1526

 VDS = 30V
 ID = 20A @VGS = 10V
 R

< 11.0mΩ @VGS = 10V
< 16.4mΩ @VGS = 4.5V

 100% UIL Tested
 100% Rg Tested

DS(ON)

G

Characteristics Symbol Rating Unit

Drain-Source Voltage V

Gate-Source Voltage V

TC=25oC (Silicon limited)

TC=25oC (Package limited) 24

Continuous Drain Current

Pulsed Drain Current IDM 60 A

Power Dissipation

Single Pulse Avalanche Energy

Junction and Storage Temperature Range TJ, T

(1)

(2)

EAS 38 mJ

TC=70oC 24

TA=25oC 13.2

TA=70oC 10.6

TC=25oC

TC=70oC 15.6

TA=25oC 3.4

TA=70oC 2.2

30 V

DSS

±20 V

GSS

35.6

ID

(3)

(3)

24.5

PD

-55~150

stg

(3)

(3)

Characteristics Symbol Rating Unit

Thermal Resistance, Junction-to-Ambient

Thermal Resistance, Junction-to-Case R

(1)

R

36

θJA

5.1

θJC

A

W

o

o

C/W

C

May. 2011. Version1.2 MagnaChip Semiconductor Ltd.

1

Ordering Information

Electrical Characteristics (T

=

25oC)

Part Number Temp. Range Package Packing Quantity Rohs Status

MDV1526URH -55~150oC PowerDFN33 Tape & Reel 5000 units Halogen Free

J

Characteristics Symbol Test Condition Min Typ Max Unit

Static Characteristics

Drain-Source Breakdown Voltage BV

Gate Threshold Voltage V

Drain Cut-Off Current I

Gate Leakage Current I

Drain-Source ON Resistance R

Forward Transconductance gfs VDS = 5V, ID = 10A - 17 - S

Dynamic Characteristics

Total Gate Charge Q

Total Gate Charge Q

Gate-Source Charge Qgs - 2.1 -

Gate-Drain Charge Qgd - 1.9 -

Input Capacitance C

Reverse Transfer Capacitance C

Output Capacitance C

Turn-On Delay Time t

Rise Time tr - 3.9 -

Turn-Off Delay Time t

Fall Time tf - 5.5 -

Gate Resistance Rg f=1 MHz 1.0 1.7 3.0 Ω

Drain-Source Body Diode Characteristics

Source-Drain Diode Forward Voltage VSD IS = 10A, VGS = 0V - 0.82 1.1 V

Body Diode Reverse Recovery Time trr

Body Diode Reverse Recovery Charge Qrr - 9.6 14.5 nC

ID = 250µA, VGS = 0V 30 - -

DSS

VDS = VGS, ID = 250µA 1.3 1.9 2.7

GS(th)

VDS = 30V, VGS = 0V - - 1

DSS

GSS

DS(ON)

g(10V)

g(4.5V)

iss

rss

oss

d(on)

d(off)

TJ=55oC - - 5

VGS = ±20V, VDS = 0V - - ±0.1

VGS = 10V, ID = 10A - 9.6 11.0

VGS = 4.5V, ID = 8A - 13.7 16.4

3.8 5.4 7.0

48 69 90

97 139 181

- 18.4 -

VDS = 15.0V, ID = 10A,
VGS = 10V

VDS = 15.0V, VGS = 0V,
f = 1.0MHz

VGS = 10V, VDS = 15.0V,
ID = 10A, RG = 3.0Ω

IF = 10A, dl/dt = 100A/µs

7.8 11.2 14.6

482 688 895

- 5.9 -

- 18.5 27.8 ns

Note :

1. Surface mounted FR-4 board by JEDEC (jesd51-7)

2. EAS is tested at starting Tj = 25℃, L = 0.1mH, IAS = 14.9A, VDD = 27V, VGS = 10V

3. T < 10sec.

MDV1526 – Single N-Channel Trench MOSFET 30V

V

µA

mΩ TJ=125oC - 16.0 23.1

nC

pF

ns

May. 2011. Version1.2 MagnaChip Semiconductor Ltd.

2

MDV1526 – Single N-Channel Trench MOSFET 30V

May. 2011. Version1.2 MagnaChip Semiconductor Ltd.

3

Fig.5 Transfer Characteristics

Fig.2 On

-

Resistance Variation with

Fig.3 On

-

Resistance Variation with

Fig.4 On

-

Resistance Variation with

Fig.6 Body Diode Forward Voltage

20

15

10

(A)

D

I

5

4.0V

4.5V

5.0V

8.0V

VGS=10.0V

3.5V

VGS=3.0V

15

10

[mΩ ]

DS(ON)

R

5

VGS=4.5V

VGS=10V

MDV1526 – Single N-Channel Trench MOSFET 30V

0

0.0 0.5 1.0 1.5 2.0

VDS (Volts)

Fig.1 On-Region Characteristics

1.8

VGS=10V
ID=10.A

1.6

1.4

1.2

, (Normalized)

1.0

DS(ON)

R

Drain-Source On-Resistance

0.8

0.6

-50 -25 0 2 5 50 75 100 125 150

TJ, Junction T emperature [oC]

Temperature

0

5 10 15 20

ID [A]

Drain Current and Gate Voltage

40

Notes :※

ID = 10A

30

[mΩ ],

20

DS(ON)

R

10

Drain-Source On-Resistance

TA = 25℃

0

2 4 6 8 10

VGS, Gate to Source Volatge [V]

Gate to Source Voltage

16

Notes :※

VDS = 5V

12

8

, Drain Current [A]

D

I

4

0

0 1 2 3 4 5

TA=25℃

VGS, Gate-Source Voltage [V]

May. 2011. Version1.2 MagnaChip Semiconductor Ltd.

Notes :※

VGS = 0V

1

10

0

10

, Reverse Drain Current [A]

DR

-1

I

10

0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1

TA=25℃

VSD, Source-Drain voltage [V]

Variation with Source Current and
Temperature

4

Fig.10 Maximum Drain Current

vs.

Fig.11 Transient Thermal Response

MDV1526 – Single N-Channel Trench MOSFET 30V

10

Note : I※

= 10A

D

8

6

4

, Gate-Source Voltage [V]

2

GS

V

0

0 2 4 6 8 10 12

QG, Total G ate Charge [nC]

Fig.7 Gate Charge Characteristics

Operation in This Area

2

10

1

10

is Limited by R

DS(on)

DC

10s

1s

10 ms

100 ms

1000

C

800

iss

600

400

Capacitance [pF]

200

0

0 5 10 15 20 25 30

C

oss

C

rss

C

= Cgs + Cgd (Cds = shorted)

iss

C

= Cds + C

oss

gd

C

= C

rss

gd

Notes ;※

1. VGS = 0 V

2. f = 1 MHz

VDS, Drain-Source Voltage [V]

Fig.8 Capacitance Characteristics

40

30

20

0

10

, Drain Current [A]

D

I

Single Pulse

-1

TJ=Max rated

10

TC=25℃

-1

10

0

10

VDS, Drain-Source Voltage [V]

Fig.9 Maximum Safe Operating Area

1

10

D=0.5

0.2

0

10

0.1

0.05

0.02

-1

10

0.01

, Thermal Response

single pulse

θ JC

-2

Z

10

-3

10

-4

-3

10

10

-2

10

t1, Rectangular Pulse Duration [sec]

Notes :※

Duty Factor, D=t1/t
PEAK TJ = PDM * Z

-1

10

0

10

, Drain Current [A]

D

I

10

1

10

2

10

0

25 50 75 100 125 150

TC, Case Temperature [ ]℃

Case Temperature

2

* R

(t) + T

θ JC

θ JC

C

1

2

10

10

3

10

Curve

May. 2011. Version1.2 MagnaChip Semiconductor Ltd.

5

Package Dimension

PowerDFN33 (3.3x3.3mm)

Dimensions are in millimeters, unless otherwise specified

MDV1526 – Single N-Channel Trench MOSFET 30V

May. 2011. Version1.2 MagnaChip Semiconductor Ltd.

6

DISCLAIMER:

The Products are not designed for use in hostile environments, including, without limitation, aircraft, nuclear power
generation, medical appliances, and devices or systems in which malfunction of any Product can reasonably be
expected to result in a personal injury. Seller’s customers using or selling Seller’s products for use in such
applications do so at their own risk and agree to fully defend and indemnify Seller.

MagnaChip reserves the right to change the specifications and circuitry without notice at any time. MagnaChip does not consider responsibility
for use of any circuitry other than circuitry entirely included in a MagnaChip product. is a registered trademark of MagnaChip
Semiconductor Ltd.

MDV1526 – Single N-Channel Trench MOSFET 30V

May. 2011. Version1.2 MagnaChip Semiconductor Ltd.

7