The MD2310FX is manufactured using planar
technology with diffused collector adopting new
and enhanced high voltage structure. The MD
product series show improved silicon efficiency
bringing updated performance to the horizontal
deflection stage.
3
2
1
TO-3PF
Figure 1.Internal schematic diagram
Table 1.Device summary
Order codeMarkingPackagePacking
MD2310FXMD2310FXTO-3PFTube
October 2009Doc ID 11801 Rev 51/10
www.st.com
10
Page 2
Electrical ratingsMD2310FX
1 Electrical ratings
Table 2.Absolute maximum ratings
SymbolParameterValueUnit
V
V
V
P
T
I
V
CES
CEO
EBO
I
CM
I
TOT
INS
STG
T
Collector-emitter voltage (VBE = 0)1500V
Collector-emitter voltage (IB = 0)700V
Emitter-base voltage (IC = 0)9V
Collector current14A
C
Collector peak current (tP < 5 ms)21A
Base current7A
B
Total dissipation at Tc = 25 °C62W
Insulation withstand voltage (RMS) from all three leads to external
heatsink
Figure 4.Output characteristicsFigure 5.Reverse biased SOA
Figure 6.DC current gain (VCE = 1 V)Figure 7.DC current gain (VCE = 5 V)
4/10Doc ID 11801 Rev 5
Page 5
MD2310FXElectrical characteristics
Figure 8.Collector-emitter saturation
Figure 10. Power lossesFigure 11. Inductive load switching time
voltage
Figure 9.Base-emitter saturation
voltage
Doc ID 11801 Rev 55/10
Page 6
Test circuitsMD2310FX
3 Test circuits
Figure 12. Power losses and inductive load switching test circuit
Figure 13. Reverse biased safe operating area test circuit
6/10Doc ID 11801 Rev 5
Page 7
MD2310FXPackage mechanical data
4 Package mechanical data
In order to meet environmental requirements, ST offers these devices in different grades of
ECOPACK
specifications, grade definitions and product status are available at: www.st.com.
ECOPACK
®
packages, depending on their level of environmental compliance. ECOPACK®
27-Oct-20095Updated TO-3PF package mechanical data
Doc ID 11801 Rev 59/10
Page 10
MD2310FX
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