Datasheet md2310fx Datasheet

Page 1
MD2310FX
High voltage NPN power transistor for
standard definition CRT display
Features
■ State-of-the-art technology:
– diffused collector “enhanced generation”
temperature variation
■ Low base drive requirement
■ Tight h
■ Fully insulated power package U.L. compliant
range at operating collector current
FE
Application
■ Horizontal deflection output for monitor and
real flat TV
Description
The MD2310FX is manufactured using planar technology with diffused collector adopting new and enhanced high voltage structure. The MD product series show improved silicon efficiency bringing updated performance to the horizontal deflection stage.
3
2
1
TO-3PF

Figure 1. Internal schematic diagram

Table 1. Device summary
Order code Marking Package Packing
MD2310FX MD2310FX TO-3PF Tube
October 2009 Doc ID 11801 Rev 5 1/10
www.st.com
10
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Electrical ratings MD2310FX

1 Electrical ratings

Table 2. Absolute maximum ratings

Symbol Parameter Value Unit
V
V
V
P
T
I
V
CES
CEO
EBO
I
CM
I
TOT
INS
STG
T
Collector-emitter voltage (VBE = 0) 1500 V
Collector-emitter voltage (IB = 0) 700 V
Emitter-base voltage (IC = 0) 9 V
Collector current 14 A
C
Collector peak current (tP < 5 ms) 21 A
Base current 7 A
B
Total dissipation at Tc = 25 °C 62 W
Insulation withstand voltage (RMS) from all three leads to external heatsink
2500 V
Storage temperature -65 to 150
Max. operating junction temperature 150
J

Table 3. Thermal data

Symbol Parameter Value Unit
R
thJC
Thermal resistance junction-case ____________________Max 2 °C/W
°C
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MD2310FX Electrical characteristics

2 Electrical characteristics

T
= 25 °C; unless otherwise specified.
CASE

Table 4. Electrical characteristics

Symbol Parameter Test conditions Min. Typ. Max. Unit
I
CES
I
EBO
V
CEO(sus)
V
CE(sat)
V
BE(sat)
h
FE
Collector cut-off current
= 0)
(V
BE
Emitter cut-off current
= 0)
(I
C
Collector-emitter sustaining voltage (IB = 0)
Collector-emitter saturation
(1)
voltage
(1)
Base-emitter saturation voltage IC = 7 A IB = 1.75 A 1.1 V
(1)
DC current gain
V V
V
I
C
I
C
I
C
I
C
IC = 7 A V
INDUCTIVE LOAD
t
1. Pulse test: pulse duration ≤ 300 µs, duty cycle ≤ 2 %.
s
t
f
Storage time Fall time
IC = 6 A ___ _ _ fh = 64 kHz I
B(on)
L
BB(off)
= 1500 V
CE
= 1500 V Tc= 125 °C
CE
= 9 V 1 mA
EB
0.2 2
= 100 mA 700 V
= 7 A IB = 1.75 A 2.5 V
= 1 A V = 7 A V
= 0.9 A__ V
= 1.6 µH
= 5 V
CE
= 1 V
CE
= 5 V 6
CE
= - 2.7 V
BE(off)
28
5.5
2.3
0.12
8.5
2.8
0.25
mA mA
µs µs
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Electrical characteristics MD2310FX

2.1 Typical characteristics

Figure 2. Safe operating area Figure 3. Derating curve
Figure 4. Output characteristics Figure 5. Reverse biased SOA
Figure 6. DC current gain (VCE = 1 V) Figure 7. DC current gain (VCE = 5 V)
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MD2310FX Electrical characteristics
Figure 8. Collector-emitter saturation

Figure 10. Power losses Figure 11. Inductive load switching time

voltage
Figure 9. Base-emitter saturation
voltage
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Test circuits MD2310FX

3 Test circuits

Figure 12. Power losses and inductive load switching test circuit

Figure 13. Reverse biased safe operating area test circuit

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MD2310FX Package mechanical data

4 Package mechanical data

In order to meet environmental requirements, ST offers these devices in different grades of ECOPACK specifications, grade definitions and product status are available at: www.st.com. ECOPACK
®
packages, depending on their level of environmental compliance. ECOPACK®
®
is an ST trademark.
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Package mechanical data MD2310FX
TO-3PF mechanical data
DIM.
min. typ max.
mm.
A5.30 5.70 C2.80 3.20 D 3.10 3.50
D1 1.80 2.20
E0.80 1.10 F 0.65 0.95
F2 1.80 2.20
G 10.30 11.50
G1 5.45
H 15.30 15.70
L 9.80 10 10.20
L2 22.8023.20 L3 26.30 26.70 L4 43.20 44.40 L5 4.30 4.70 L6 24.30 24.70 L7 14.60 15
N1.80 2.20 R 3.80 4.20
Dia3.40 3.80
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MD2310FX Revision history

5 Revision history

Table 5. Document revision history

Date Revision Changes
18-Oct-2005 1 First release
25-Nov-2005 2 Complete datasheet
15-Dec-2005 3 Legal page inserted
29-Sep-2006 4 New hFE limit
27-Oct-2009 5 Updated TO-3PF package mechanical data
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MD2310FX
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