Page 1
High voltage NPN power transistor for standard
Features
■ State-of-the-art technology:
– Diffused collector “enhanced generation”
■ Stable performance versus operating
temperature variation
■ Low base drive requirement
■ Tight h
■ Fully insulated power package UL compliant
■ Integrated free wheeling diode
Applications
range at operating collector current
FE
MD2103DFP
definition CRT display
3
2
1
TO-220FP
■ Horizontal deflection output for TV
Figure 1. Internal schematic diagram
Description
The MD2103DFP is manufactured using diffused
collector in planar technology adopting new and
enhanced high voltage structure. The new MD
product series show improved silicon efficiency
briging updated performance to the horizontal
deflection stage.
Table 1. Device summary
Order code Marking Package Packing
MD2103DFP MD2103DFP TO-220FP Tube
RBE=65Ω (typ)
May 2008 Rev 1 1/9
www.st.com
9
Page 2
Electrical ratings MD2103DFP
1 Electrical ratings
Table 2. Absolute maximum rating
Symbol Parameter Value Unit
V
V
V
I
P
V
T
Collector-emitter voltage (VBE =0) 1500 V
CES
Collector-emitter voltage (IB =0) 700 V
CEO
Emitter-base voltage (IC =0) 7 V
EBO
I
Collector current 6 A
C
Collector peak current (tP < 5ms) 9 A
CM
I
Base current 3 A
B
Total dissipation at Tc ≤ 25°C 38 W
tot
Insulation withstand voltage (RMS) from all three leads to
INS
external heatsink
Storage temperature -65 to 150 °C
stg
T
Max. operating junction temperature 150 °C
J
1500 V
Table 3. Thermal data
Symbol Parameter Value Unit
R
thj-case
Thermal resistance junction-case max 3.3 °C/W
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Page 3
MD2103DFP Electrical characteristics
2 Electrical characteristics
(T
= 25°C unless otherwise specified)
case
Table 4. Electrical characteristics
Symbol Parameter Test conditions Min. Typ. Max. Unit
= 1500V
I
CES
I
EBO
Collector cut-off current
(VBE =0)
Emitter cut-off current
(IC =0)
V
CE
= 1500V TC = 125°C
V
CE
V
= 5V
EB
0.22mA
mA
50 125 mA
V
(BR)EBO
V
CE(sat)
V
BE(sat)
Emitter-base brakdown
voltage (I
(1)
Collector-emitter
C
= 0)
saturation voltage
Base-emitter saturation
(1)
voltage
= 700mA
I
E
IC = 3A _ _ IB =0.75A
IC = 3A _ _ IB =0.75A
IC = 1A V
(1)
h
FE
DC current gain
Inductive load
t
s
t
f
V
F
Storage time
Fall time
Diode forward voltage
= 3A V
I
C
= 3A V
I
C
=3A fh =16kHz
I
C
=0.5A V
I
B(on)
=6.3µH
L
BB(off)
(see Figure 12)
= 3A
I
F
Note: Note (1) Pulsed duration = 300 µs, duty cycle ≤ 1.5%
CE
CE
CE
BE(off)
=5V
=1V
=5V
=-2.7V
6.5
11 V
1.8 V
1.5 V
17
6
9.5
3.8
0.25
2V
µs
µs
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Page 4
Electrical characteristics MD2103DFP
2.1 Electrical characteristics (curves)
Figure 2. Safe operating area Figure 3. Derating curve
Figure 4. Output characteristics Figure 5. Reverse biased SOA
Figure 6. DC current gain Figure 7. DC current gain
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MD2103DFP Electrical characteristics
Figure 8. Collector-emitter saturation
voltage
Figure 9. Base-emitter saturation
voltage
Figure 10. Power losses Figure 11. Inductive load switching time
2.2 Test circuits
Figure 12. Inductive load switching test circuit
1) Fast electronic switch
2) Non-inductive resistor
3) Fast recovery rectifier
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Package mechanical data MD2103DFP
3 Package mechanical data
In order to meet environmental requirements, ST offers these devices in ECOPACK®
packages. These packages have a lead-free second level interconnect. The category of
second level interconnect is marked on the package and on the inner box label, in
compliance with JEDEC Standard JESD97. The maximum ratings related to soldering
conditions are also marked on the inner box label. ECOPACK is an ST trademark.
ECOPACK specifications are available at: www.st.com
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MD2103DFP Package mechanical data
TO-220FP mechanical data
Dim.
A 4.40 4.60 0.173 0.181
B 2.5 2.7 0.098 0.106
D 2.5 2.75 0.098 0.108
E 0.45 0.70 0.017 0.027
F 0.75 1.00 0.0300.039
F1 1.15 1.50 0.045 0.067
F2 1.15 1.50 0.045 0.067
G4.955.200.1950.204
G1 2.40 2.70 0.094 0.106
H 10 10.40 0.393 0.409
L2 16 0.630
L3 28.6 30.6 1.126 1.204
L4 9.80 10.60 0.385 0.417
L5 2.93.6 0.114 0.141
L6 15.90 16.40 0.626 0.645
L7 99.300.354 0.366
Dia3 3.2 0.118 0.126
Min. Typ Max. Min. Typ. Max.
mm. inch
E
A
D
B
L3
L6
L7
Dia
F1
F
G1
H
F2
123
L4
L2
L5
G
7012510-I
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Revision history MD2103DFP
4 Revision history
Table 5. Document revision history
Date Revision Changes
27-May-2008 1 First release
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Page 9
MD2103DFP
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