Datasheet MCTV35P60F1D Datasheet (Intersil)

Semiconductor

MCTV35P60F1D

April 1999

PROCESS OBSOLETE - NO NEW DESIGNS

Features

PART WITHDRAWN

• 35A, -600V
= -1.35V (Max) at I = 35A and +150oC

•V

TM

• 800A Surge Current Capability

• 800A/µs di/dt Capability

• MOS Insulated Gate Control

• 50A Gate Turn-Off Capability at +150

o

C

• Anti-Parallel Diode

Description

The MCT is an MOS Controlled Thyristor designed for s witch­ing currents on and offby negative and positive pulsed control
of an insulated MOS gate. It is designed for use in motor con­trols, inverters, line switches and other power switching appli­cations. The MCT is especially suited for resonant (zero
voltage or zero current switching) applications. The SCR like
forward drop greatly reduces conduction pow er loss .

MCTs allow the control of high power circuits with very small
amounts of input energy. They feature the high peak current
capability common to SCR type thyristors, and operate at
junction temperatures up to +150
This device features a discrete anti-parallel diode that shunts
current around the MCT in the reverse direction without
introducing carriers into the depletion region.

PART NUMBER INFORMATION

PART NUMBER PACKAGE BRAND

MCTV35P60F1D TO-247 M35P60F1D

NOTE: When ordering, use the entire part number.

Formerly developmental type TA9789 (MCT) and TA49054
(diode).

o

C with active switching.

35A, 600V P-Type MOS Controlled

Thyristor (MCT) with Anti-Parallel Diode

Package

JEDEC STYLE TO-247

A

A

K

GR

G

Symbol

GA

K

Absolute Maximum Ratings T

Peak Off-State Voltage (See Figure 11). . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V

Continuous Cathode Current (See Figure 2)

TC = +25oC (Package Limited). . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I

TC = +90oC. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I

Non-repetitive Peak Cathode Current (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I

Peak Controllable Current (See Figure 10) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .I

Gate-Anode Voltage (Continuous). . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V

Gate-Anode Voltage (Peak) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .V

Rate of Change of Voltage. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . dv/dt SeeFigure 11

Rate of Change of Current. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .di/dt 800 A/µs

Maximum Power Dissipation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . P

Linear Derating Factor. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1.43 W/oC

Operating and Storage Temperature. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .TJ,T

Maximum Lead Temperature for Soldering . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . T

(0.063" (1.6mm) from case for 10s)
NOTE: 1. Maximum Pulse Width of 250µs (Half Sine) Assume TJ (Initial) = +90oC and TJ (Final) = TJ (Max) = +150oC

CAUTION: These devices are sensitive to electrostatic discharge. Users should follow proper ESD Handling Procedures.
Copyright

© Harris Corporation 1999

= +25oC, Unless Otherwise Specified

C

2-8

MCTV35P60F1D UNITS

DRM

K25

K115
KSM

KC

GA1

GAM

T

STG

L

-600 V

60
35

800 A

50 A

±20 V
±25 V

178 W

-55 to +150
260

File Number 3694.4

A
A

o

C

o

C

Specifications MCTV35P60F1D

Electrical Specifications T

PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNITS

Peak Off-State
Blocking Current

On-State Voltage V

Gate-Anode
Leakage Current

Input Capacitance C

Current Turn-On
Delay Time

Current Rise Time t

Current Turn-Off Delay Time t

Current Fall Time t

Turn-Off Energy E

= +25oC, Unless Otherwise Specified

C

I

DRM

VKA = -600V TC = +150oC- - 5 mA

VGA = +18V TC = +25oC - - 200 µA

IK = I

K115

V

= -7V

GA

VGA = ±20V - - 100 nA

VKA = -20V, TJ = +25oC

I

GAS

TM

ISS

VGA = +18V

t

D(ON)I

L = 200µH, IK = I

K115

RG = 1Ω, VGA = +18V, -7V
TJ = +125oC

RI

D(OFF)I

FI

OFF

VKA = -300V

TC = +150oC - - 1.35 V

= +25oC - - 1.4 V

T

C

-5-nF

- 140 - ns

- 180 - ns

- 640 - ns

- 1.1 1.4 µs

- 5.6 - mJ

Thermal Resistance (MCT) R

Thermal Resistance (Diode) R

Diode Forward Voltage V

Diode Reverse Recovery Time t

θJC

θJC

KA

RR

IKA= 35A - - 1.4 V

IKA= 35A, di/dt = 100A/µs - - 600 ns

Typical Performance Curves

100

PULSE TEST
PULSE DURATION = 250µs

50

DUTY CYCLE < 2%

30
20

10

TJ = +150oC

5
3

, CATHODE CURRENT (A)

K

I

2

1

0 0.5 1.0 1.5 2.0

VTM, CATHODE VOLTAGE (V)

TJ = -40oC

TJ = +25oC

-.6.7oC/W

- 1.1 1.2

= +150oC

T

100

80

PACKAGE LIMIT

60

40

20

, DC CATHODE CURRENT (A)

K

I

0

20 40 60 80 100 120 140 160

TC, CASE TEMPERATURE (oC)

MCT SWITCHING LIMIT

DIODE

J

MCT

o

C/W

FIGURE 1. CATHODECURRENT vs SATURATION VOLTAGE

(TYPICAL)

FIGURE 2. MAXIMUM CONTINUOUS CATHODE CURRENT

2-9

MCTV35P60F1D

Typical Performance Curves

T

= +150oC, RG = 1Ω, L = 200µH

200

175

150

125

100

, TURN-ON DELAY (ns)

D(ON)I

75

t

50

0 102030405060

VKA = -200V

IK, CATHODE CURRENT (A)

J

(Continued)

VKA = -300V

FIGURE 3. TURN-ON DELAY vs CATHODE CURRENT

(TYPICAL)

200

150

VKA= -200V

TJ = +150oC, RG = 1Ω, L = 200mH

= +150oC, RG = 1Ω, L = 200µH

T

1100

1000

900

800

700

, TURN-OFF DELAY (ns)

600

D(OFF)I

500

t

400

0102030

VKA = -200V

IK, CATHODE CURRENT (A)

J

VKA = -300V

40

50

FIGURE 4. TURN-OFF DELAY vs CATHODE CURRENT

(TYPICAL)

1.5

1.25

VKA = -200V

TJ = +150oC, RG = 1Ω, L = 200µH

60

100

RISE TIME (ns)

RI,

t

50

0

0 102030405060

VKA= -300V

IK, CATHODE CURRENT (A)

FIGURE 5. TURN-ON RISE TIME vs CATHODE CURRENT

(TYPICAL)

T

= +150oC, RG = 1Ω, L = 200µH

5

VKA= -300V

3

2

1

,TURN-ON SWITCHING LOSS (mJ)

ON

E

0.5
0 102030405060

IK, CATHODE CURRENT (A)

J

VKA= -200V

1

, FALL TIME (µs)

FI

t

0.75

0.5
0102030

I

VKA = -300V

40

, CATHODE CURRENT (A)

K

50 60

FIGURE 6. TURN-OFF FALL TIME vs CATHODE CURRENT

(TYPICAL)

T

= +150oC, RG = 1Ω, L = 200µH

10

5

VKA = -300V

1

0.5

, TURN-OFF SWITCHING LOSS (mJ)

OFF

E

0.1
0

10

20

IK, CATHODE CURRENT (A)

J

VKA = -200V

30 40 50 60

FIGURE 7. TURN-ON ENERGY LOSS vs CATHODE CURRENT

(TYPICAL)

FIGURE8. TURN-OFF ENERGYLOSSvsCATHODECURRENT

(TYPICAL)

2-10

MCTV35P60F1D

Typical Performance Curves

100

(Continued)

TC = +90oC, L = 200µH

50
30

20

VKA = -300V

VKA = -200V

10

f

5
3

2

, MAX OPERATING FREQUENCY (kHz)

1

MAX

f

= (PD - PC) / E

f

MAX2

PD: ALLOWABLE DISSIPATION

: CONDUCTION DISSIPATION

P

C

(P

DUTY FACTOR = 50%)

C

R

= 0.7oC/W

θJC

5 10 20 30 50 100

= 0.05/ t

MAX1

D(ON)I

+ t

D(OFF)I

SWITCH

)

IK, CATHODE CURRENT (A)

FIGURE9. OPERATING FREQUENCYvsCATHODE CURRENT

(TYPICAL)

TJ = +150oC, VGA = 18V

-725

-700

-675

-650

-625

-600

-575

-550

-525

-500

, BREAKDOWN VOLTAGE (V)

-475

DRM

-450

V

-425

0.1 1 10 100 1000 10000

dv/dt (V/µs)

T

= +150oC, VGA = 18V, L = 100µH

60

J

50

40

30

20

TURN-OFF

SAFE OPERATING AREA

10

PEAK CATHODE CURRENT (A)

0

0

-100 -200

-300 -400

-500

VKA, PEAK TURN OFF VOLTAGE (V)

FIGURE 10. TURN-OFF CAPABILITY vs ANODE-CATHODE

VOLTAGE

200

CS = 0.1µF, TJ = +150oC

100

C

= 0.1µF, TJ = +25oC

S

= 1µF, TJ = +150oC

C

S

50

20

10

, SPIKE VOLTAGE (V)

SPIKE

5

V

2

0 5 10 15 20 25 30 35 40

CS = 2µF, TJ = +150oC

= 1µF, TJ = +25oC

C

S

= 2µF, TJ = +25oC

C

S

di/dt (A/µs)

-600

FIGURE 11. BLOCKING VOLTAGE vs dv/dt FIGURE 12. SPIKE VOLTAGE vs di/dt (TYPICAL)

100

PULSE TEST
PULSE DURATION = 250µs

50

DUTY CYCLE < 2%
30
20

10

TJ = +150oC

TJ = -40oC

5

TJ = +25oC

3
2

, CATHODE-ANODE CURRENT (A)

KA

I

1

0 0.5 1 1.5 2

V

, ANODE-CATHODE VOLTAGE (V)

AK

FIGURE 13. DIODE CATHODE-ANODE CURRENT vs VOLTAGE

(TYPICAL)

1,000

500

t

RR

TJ = +25oC, di/dt = 100A/µs

300

t

200

A

100

50
30

20

, REVERSE RECOVERY TIMES (ns)

RR

t

10

0 10203040

I

KA

t

B

, CATHODE-ANODE CURRENT (A)

FIGURE 14. DIODE REVERSE RECOVERY TIMES vs CURRENT

(TYPICAL)

2-11

Test Circuits

200µH

I

K

DUT

MCTV35P60F1D

V

G

1Ω

­+

V

K

9V

-

+

500Ω

-

20V

10kΩ

+

V

A

C

S

DUT

9V

-

+

4.7kΩ

I

K

+

-

FIGURE 15. SWITCHING TEST CIRCUIT FIGURE 16. V

MAXIMUM RISE AND FALL TIME OF VG IS 200ns

V

G

10%

-V

KA

90%

I

K

10%

t

D(OFF)I

t

FI

90%

t

D(ON)I

t

RI

FIGURE 17. SWITCHING TEST WAVEFORMS

Operating Frequency Information

Operating frequency information for a typical device
(Figure 9) is presented as a guide for estimating device per­formance for a specific application. Other typical frequency
vs cathode current (I
tion shown for a typical unit in Figures 3 to 8. The operating
frequency plot (Figure 9) of a typical device shows f
f

whichever is lower at each point. The information is

MAX2

based on measurements of a typical device and is bounded
by the maximum rated junction temperature.

f

is defined by f

MAX1

+t

D(OFF)I

deadtime (the denominator) has been arbitrarily
held to 10% of the on-state time for a 50% duty factor. Other
definitions are possible. t
the leading edge of the input pulse and the point where the
cathode current rises to 10% of its maximum value. t
is defined as the 90% point of the trailing edge of the input
pulse and the point where the cathode current falls to 90% of

) plots are possible using the informa-

AK

MAX1

MAX1

= 0.05 / (t

D(ON)I

D(ON)I+tD(OFF)I

is defined as the 10% point of

). t

or

D(ON)I

D(OFF)I

TEST CIRCUIT

SPIKE

V

G

di/dt

I

K

V

AK

FIGURE 18. V

V

SPIKE

V

TEST WAVEFORMS

SPIKE

TM

its maximum value. Device delay can establish an additional
frequency limiting condition for an application other than
T

JMAX.tD(OFF)I

is important when controlling output ripple

under a lightly loaded condition.
f

is defined by f

MAX2

allowable dissipation (P
R

. The sum of device switching and conduction losses

θ

JC

must not exceed P

. A 50% duty factor was used (Figure 9)

D

and the conduction losses (P
(V

AK•IAK

) / (duty factor/100). EONis defined as the sum of

=(PD-PC)/(EON+E

MAX2

) is defined by PD=(T

D

) are approximated by PC=

C

). The

OFF

JMAX-TC

)/

the instantaneous power loss starting at the leading edge of
the input pulse and ending at the point where the anode­cathode voltage equals saturation voltage (V

AK=VTM

). E

OFF

is defined as the sum of the instantaneous power loss start­ing at the trailing edge of the input pulse and ending at the
point where the cathode current equals zero (I

= 0).

K

2-12