Page 1
MCT6H/ MCT62H
Vishay Telefunken
Dual Channel Optocoupler with Phototransistor
Output
Description
The MCT6H and MCT62H consist of a phototransistor optically coupled to a gallium arsenide
infrared-emitting diode in a 6-lead plastic dual inline
package.
The elements are mounted on one leadframe using
a coplanar technique, providing a fixed distance
between input and output for highest safety
requirements.
Applications
Galvanically separated circuits, non-interacting
switches
Features
D
Current Transfer Ratio (CTR) of typical 100%
D
Isolation test voltage V
D
Low temperature coefficient of CTR
D
Low coupling capacitance of typical 0.3 pF
D
Wide ambient temperature range
D
Underwriters Laboratory (UL) 1577 recognized,
file number E-76222
D
CSA (C–UL) 1577 recognized, file number
E-76222 – Double Protection
D
Coupling System U
= 5 kV
IO
14838
87
1
2
C
6
3
5
95 10809
4
Order Instruction
Ordering Code CTR Ranking Remarks
MCT6H > 50%
MCT62H > 100%
Rev. A1, 11–Jan–99 201
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MCT6H/ MCT62H
Vishay Telefunken
Absolute Maximum Ratings
Input (Emitter)
Parameter Test Conditions Symbol Value Unit
Reverse voltage V
Forward current I
Forward surge current tp ≤ 10 ms I
Power dissipation T
Junction temperature T
Output (Detector)
Parameter Test Conditions Symbol Value Unit
Collector emitter voltage V
Emitter collector voltage V
Collector current I
Collector peak current tp/T = 0.5, tp ≤ 10 ms I
Power dissipation T
Junction temperature T
≤ 25°C P
amb
≤ 25°C P
amb
R
F
FSM
V
CEO
ECO
C
CM
V
6 V
60 mA
1.5 A
100 mW
j
125
°
C
70 V
7 V
50 mA
100 mA
150 mW
j
125
°
C
Coupler
Parameter Test Conditions Symbol V alue Unit
AC isolation test voltage (RMS) t = 1 min VIO
Total power dissipation T
Ambient temperature range T
Storage temperature range T
Soldering temperature 2 mm from case, t ≤ 10 s T
1)
Related to standard climate 23/50 DIN 50014
≤ 25°C P
amb
tot
amb
stg
sd
1)
5 kV
250 mW
–40 to +100
–55 to +125
260
°
C
°
C
°
C
Rev. A1, 11–Jan–99202
Page 3
MCT6H/ MCT62H
C F
Vishay Telefunken
Electrical Characteristics (T
amb
= 25°C)
Input (Emitter)
Parameter Test Conditions Symbol Min. Typ. Max. Unit
Forward voltage IF = 50 mA V
Output (Detector)
Parameter Test Conditions Symbol Min. Typ. Max. Unit
Collector emitter voltage IC = 1 mA V
Emitter collector voltage IE = 100 mA V
Collector dark current VCE = 20 V, IF = 0, E = 0 I
Coupler
Parameter Test Conditions Symbol Min. Typ. Max. Unit
DC isolation test voltage t = 2 s V
Isolation resistance VIO = 1000 V,
40% relative humidity
Collector emitter
IF = 10 mA, IC = 1 mA V
saturation voltage
Cut-off frequency IF = 10 mA, VCE = 5 V,
R
L
= 100
W
Coupling capacitance f = 1 MHz C
1)
Related to standard climate 23/50 DIN 50014
RIO
F
CEO
ECO
CEO
1)
IO
1)
CEsat
f
C
k
1.25 1.6 V
70 V
7 V
100 nA
5 kV
12
10
0.3 V
100 kHz
0.3 pF
W
Current Transfer Ratio (CTR)
Parameter Test Conditions Type Symbol Min. Typ. Max. Unit
IC/I
F
VCE = 5 V, IF = 5 mA MCT6H CTR 0.5 1
VCE = 5 V, IF = 10 mA MCT6H CTR 0.6 1.2
VCE = 5 V, IF = 5 mA MCT62H CTR 1 2
Rev. A1, 11–Jan–99 203
Page 4
MCT6H/ MCT62H
S C L
(g)
Vishay Telefunken
Switching Characteristics
Parameter Test Conditions Symbol Typ. Unit
Delay time VS = 5 V, IC = 2 mA, RL = 100 W (see figure 1) t
Rise time
Fall time t
Storage time t
Turn-on time t
Turn-off time t
I
F
W
+ 5 V
IC= 2 mA ;
Channel I
Channel II
Adjusted through
input amplitude
Oscilloscope
RL= 1 M
CL= 20 pF
W
100%
90%
10%
0
t
p
I
C
0
t
r
t
d
I
I
F
0
RG= 50
tp
T
tp= 50 ms
95 10804
W
= 0.01
F
50
W
100
Figure 1. Test circuit, non-saturated operation
t
on
off
d
r
f
s
3.0
3.0
4.7
0.3
6.0
5.0
t
t
s
f
m
m
m
m
m
m
96 11698
s
s
s
s
s
s
t
t
t
on
t
p
tion
t
d
t
r
t
(= td + tr) turn-on time
on
pulse duradelay time
rise time
Figure 2. Switching times
t
off
t
s
t
f
t
(= ts + tf) turn-off time
off
storage time
fall time
Rev. A1, 11–Jan–99204
Page 5
MCT6H/ MCT62H
Vishay Telefunken
Typical Characteristics (T
300
Coupled device
250
200
Phototransistor
150
IR-diode
100
50
tot
P – Total Power Dissipation ( mW )
0
0 40 80 120
T
96 11700
Figure 3. Total Power Dissipation vs.
1000.0
100.0
– Ambient Temperature (
amb
°
Ambient Temperature
= 25_C, unless otherwise specified)
amb
10000
VCE=20V
I
=0
1000
100
with open Base ( nA )
CEO
I – Collector Dark Current,
96 11928
F
10
1
0 102030405060708090100
T
– Ambient Temperature ( °C
amb
Figure 6. Collector Dark Current vs.
Ambient Temperature
100.00
VCE=5V
10.00
10.0
1.0
F
I – Forward Current ( mA )
0.1
0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0
VF – Forward Voltage ( V )96 11862
Figure 4. Forward Current vs. Forward Voltage
1.5
VCE=5V
1.4
I
=5mA
F
1.3
1.2
1.1
1.0
0.9
0.8
0.7
rel
0.6
CTR – Relative Current Transfer Ratio
0.5
–30 –20 –10 0 10 20 30 40 50 60 70 80
T
96 11927
– Ambient Temperature ( °C
amb
Figure 5. Relative Current Transfer Ratio vs.
Ambient Temperature
1.00
0.10
C
I – Collector Current ( mA )
0.01
0.1 1.0 10.0 100.0
IF – Forward Current ( mA )96 11929
Figure 7. Collector Current vs. Forward Current
100.0
20mA
10mA
5mA
2mA
1mA
C
I – Collector Current ( mA )
96 11930
10.0
1.0
0.1
0.1 1.0 10.0 100.0
VCE – Collector Emitter Voltage ( V
IF=50mA
Figure 8. Collector Current vs. Collector Emitter Voltage
Rev. A1, 11–Jan–99 205
Page 6
MCT6H/ MCT62H
Vishay Telefunken
1.0
0.9
CTR=50%
0.8
0.7
0.6
0.5
0.4
0.3
0.2
0.1
0
CEsat
V – Collector Emitter Saturation Voltage ( V )
1 10 100
IC – Collector Current ( mA )96 11993
20%
10%
Figure 9. Collector Emitter Saturation Voltage vs.
Collector Current
1000
VCE=5V
100
10
m
8
6
4
2
offon
t / t – Turn on / Turn off Time ( s )
0
012345678910
IC – Collector Current ( mA )96 11995
Non saturated opera-
t
off
tion
V
=5V
S
R
=100
W
L
t
on
Figure 11. Turn on / off Time vs. Collector Current
Type
XXXXXXXX
10
CTR – Current Transfer Ratio ( % )
1
0.1 1.0 10.0 100.0
IF – Forward Current ( mA )96 11994
Figure 10. Current Transfer Ratio vs. Forward Current
Date
Code
(YM)
Indication
Pin 1
820 U TFK 63
Coupling
System
Indicator
Company
Logo
Figure 12. Marking example
Production
Location
15091
Rev. A1, 11–Jan–99206
Page 7
Dimensions in mm
MCT6H/ MCT62H
Vishay Telefunken
weight: ca. 0.55 g
creepage distance:y 6 mm
air path:
y
6 mm
after mounting on PC board
14784
Rev. A1, 11–Jan–99 207
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