Datasheet MCP3001 Datasheet
MCP3001
2.7V 10-Bit A/D Converter with SPI™ Serial Interface
Features
• 10-bit resolution
• ±1 LSB max DNL
• ±1 LSB max INL
• On-chip sample and hold
• SPI™ serial interface (modes 0,0 and 1,1)
• Single supply operation: 2.7V - 5.5V
• 200 ksps sampling rate at 5V
• 75 ksps sampling rate at 2.7V
• Low power CMOS technology
- 5 nA typical standby current, 2 µA max
- 500 µA max active current at 5V
• Industrial temp range: -40°C to +85°C
• 8-pin PDIP, SOIC, MSOP and TSSOP packages
Applications
• Sensor Interface
• Process Control
• Data Acquisition
• Battery Op erated Systems
Description
The Microchip Technology Inc. MCP3001 is a successive approximation 10-bit A/D converter (ADC) with onboard sample and hold circuitry. T he dev ic e p rov id es a
single pseudo-differential input. Differential Nonlinearity (DNL) and Integral N onlin earity (INL) are bo th spe cified at ±1 LSB max. Communication with the device is
done using a simple serial interface compa tible with the
SPI protocol. The de vi ce is capable of sample rates u p
to 200 ksps at a clock rat e of 2.8 MHz. The MCP3001
operates over a broad voltage range (2.7V - 5.5V).
Low current design permits operation with a typical
standby current of only 5 nA and a typical active c urrent
of 400 µA. The device is offered in 8-pin PDIP, MSOP,
TSSOP and 150 mil SOIC packages.
Package Types
PDIP, MSOP, SOIC, TSSOP
V
REF
IN+
IN–
V
SS
Illustration not to scale
MCP3001
1
2
3
4
Functional Block Diagram
V
REF
DAC
Comparator
IN+
Sample
and
Hold
IN-
Control Logic
CS/SHDN
8
7
6
5
CLK
V
DD
CLK
D
OUT
CS/SHDN
V
10-Bit SAR
Shift
Register
D
V
SS
DD
OUT
SPI™ is a trademark of Motorola Inc.
© 2007 Microchip Technology Inc. DS21293C-page 1
MCP3001
1.0 ELECTRICAL
PIN FUNCTION TABLE
CHARACTERISTICS
1.1 Maximum Ratings*
VDD.........................................................................7.0V
All inputs and outputs w.r.t. V
Storage temperature ..........................-65°C to +150°C
Ambient temp. with power applied.....-65°C to +125°C
ESD protection on all pins (HBM)........................> 4kV
*Notice: Stresses above those listed under “Maximum ratings”
may cause permanent damage to the device. This is a stress
rating only and functional operation of the device at those or
any other conditions above those indicated in the operational
listings of this specification is not implied. Exposure to maximum rating conditions for extended periods may affect device
reliability.
...... -0.6V to VDD +0.6V
SS
Name Function
V
DD
V
SS
+2.7V to 5.5V Power Supply
Ground
IN+ Positive A nalog Input
IN- Negative Analog Input
CLK Serial Clock
D
OUT
Serial Data Out
CS/SHDN Chip Select/Shutdown Input
V
REF
Reference V oltage Input
ELECTRICAL CHARACTERISTICS
All parameters ap ply at VDD = 5V , VSS = 0V , V
unless otherwise noted. Typical values apply for V
Parameter Sym Min Typ Max Units Conditions
Conversion Rate:
Conversion Time t
Analog Input Sample Time t
Throughput Rate f
CONV
SAMPLE
SAMPLE
DC Accuracy:
Resolution 10 bits
Integral Nonlinearity INL — ±0.5 ±1 LSB
Differential Nonlinearity DNL — ±0.25 ±1 LSB No missing codes over tem-
Offset Error — — ±1.5 LSB
Gain Error — — ±1 LSB
Dynamic Performance:
Total Harmonic Distortion THD — -76 — dB V
Signal to Noise and Distortion
SINAD — 61 — dB V
(SINAD)
Spurious Free Dynamic Range SFDR — 80 — dB V
Reference Input:
Voltage Range V
Current Drain I
REF
REF
Note 1: This parameter is guaranteed by characterization and not 100% tested.
2: See graph that relates linearity performance to V
3: Because the sample cap will eventually lose charge, clock rates below 10 kHz can affect linearity perfor-
mance, especially at elevated temperatures.
REF
= 5V, T
DD
= -40°C to +85°C, f
AMB
= 5V, T
=25°C, unless otherwise noted.
AMB
SAMPLE
— — 10 clock
cycles
1.5 clock
cycles
— — 200
75
ksps
ksps
0.25 — VDD VNote 2
—90
0.001
level.
REF
150
3
µA
µA CS
= 200 ksps and f
V
= V
= V
REF
REF
= 5V
= 2.7V
DD
V
DD
perature
= 0.1V to 4.9V@1 kHz
IN
= 0.1V to 4.9V@1 kHz
IN
= 0.1V to 4.9V@1 kHz
IN
= VDD = 5V
CLK
= 14*f
SAMPLE
,
DS21293C-page 2 © 2007 Microchip Technology Inc.
MCP3001
All parameters ap ply at VDD = 5V , VSS = 0V , V
unless otherwise noted. Typical values apply for V
REF
= 5V, T
= 5V, T
DD
= -40°C to +85°C, f
AMB
=25°C, unless otherwise noted.
AMB
= 200 ksps and f
SAMPLE
Parameter Sym Min Typ Max Units Conditions
Temperature Ranges:
Specified Temperature Range T
Operating Temperature Range T
Storage Temperature Range T
A
A
A
-40 — +85 °C
-40 — +85 °C
-65 — +150 °C
Thermal Package Resistance:
Thermal Resistance, 8L-PDIP
Thermal Resistance, 8L-SOIC θ
Thermal Resistance, 8L-MSOP
Thermal Resistance, 8L-TSSOP θ
θ
JA
JA
θ
JA
JA
—85—°C/W
—163—°C/W
—206—°C/W
——°C/W
Analog Inputs:
Input Voltage Range (IN+) IN+ IN- — V
Input Vo ltage Range (IN-) IN- V
-100 — VSS+100 mV
SS
+IN- V
REF
Leakage Current — 0.001 ±1 µA
Switch Resistance R
Sample Capac itor C
SS
SAMPLE
—1K— Ω See Figure 4-1
— 20 — pF See Figure 4-1
Digital Input/Output:
Data Coding Format Straight Binary
High Level Input Voltage V
Low Level Input Voltage V
High Level Output Voltage V
Low Level Output Voltage V
Input Leakage Current I
Output Leakage Current I
Pin Capacitance
CIN, C
(all inputs/outpu t s)
OUT
0.7 V
——0.3 VDDV
4.1 — — V IOH = -1 mA, VDD = 4.5V
——0.4VI
-10 — 10 µA VIN = VSS or V
-10 — 10 µA V
— — 10 pF VDD = 5.0V (Note 1)
IH
IL
OH
OL
LI
LO
——V
DD
= 1 mA, VDD = 4.5V
OL
= VSS or V
OUT
= 25°C, f = 1 MHz
T
AMB
Timing Parameters:
Clock Frequency f
Clock High Time t
Clock Low Time t
CS
Fall To First Rising CLK Edge t
CLK Fall To Output Data Valid t
CLK Fall To Output Enable t
CS Rise To Output Disable t
CLK
HI
LO
SUCS
DO
EN
DIS
——2.8
1.05
160 — — ns
160 — — ns
100 — — ns
— — 125
200
— — 125
200
— — 100 ns See test circuits, Figure 1-2
MHz
VDD = 5V (Note 3)
MHz
= 2.7V (Note 3)
V
DD
nsnsVDD = 5V, See Figure 1-2
= 2.7, See Figure 1-2
V
DD
nsnsVDD = 5V, See Figure 1-2
V
= 2.7, See Figure 1-2
DD
(Note 1)
Disable Time t
CS
D
Rise Time t
OUT
CSH
R
350 — — ns
— — 100 ns See test circuits, Figure 1-2
(Note 1)
Fall Time t
D
OUT
F
— — 100 ns See test circuits, Figure 1-2
(Note 1)
Note 1: This parameter is guaranteed by characterization and not 100% tested.
2: See graph that relates linearity performance to V
REF
level.
3: Because the sample cap will eventually lose charge, clock rates below 10 kHz can affect linearity perfor-
mance, especially at elevated temperatures.
CLK
DD
= 14*f
DD
SAMPLE
,
© 2007 Microchip Technology Inc. DS21293C-page 3
MCP3001
All parameters ap ply at V
unless otherwise noted. Typical values apply for V
= 5V , VSS = 0V , V
DD
REF
= 5V, T
= 5V, T
DD
= -40°C to +85°C, f
AMB
=25°C, unless otherwise noted.
AMB
= 200 ksps and f
SAMPLE
Parameter Sym Min Typ Max Units Conditions
Power Requirements:
Operating Voltage V
Operating Current I
Standby Current I
DD
DD
DDS
2.7 — 5.5 V
—400
210
500 µ AµAVDD = 5.0V, D
= 2.7V, D
V
DD
—0.005 2 µACS = VDD = 5.0V
Note 1: This parameter is guaranteed by characterization and not 100% tested.
2: See graph that relates linearity performance to V
REF
level.
3: Because the sample cap will eventually lose charge, clock rates below 10 kHz can affect linearity perfor-
mance, especially at elevated temperatures.
CS
CLK
D
OUT
t
SUCS
HI-Z
t
t
HI
LO
t
EN
t
DO
Null BIT
MSB OUT
t
t
R
t
F
DIS
LSB
= 14*f
CLK
unloaded
OUT
unloaded
OUT
t
CSH
HI-Z
SAMPLE
,
FIGURE 1-1: Serial Timing.
DS21293C-page 4 © 2007 Microchip Technology Inc.
MCP3001
Load circuit for tR, tF, t
1.4V
D
OUT
Voltage Waveforms for tR, t
D
OUT
t
R
Voltage Waveforms for t
CLK
D
OUT
DO
3kΩ
Test Point
CL = 30 pF
t
DO
Load circuit for t
DIS
and t
EN
Test Point
V
DD
3kΩ
D
OUT
30 pF
V
F
V
OH
V
OL
t
F
CS
Voltage Waveforms for t
CLK
D
OUT
DO
Voltage Waveforms for t
CS
D
OUT
t
DIS
VDD/2
t
SS
12
V
IH
Waveform 2
tEN Waveform
Waveform 1
DIS
EN
3
4
B9
t
EN
DIS
90%
Waveform 1*
t
DIS
D
OUT
10%
Waveform 2†
* Waveform 1 is for an output with internal condi-
tions such that the output is high, unless disabled
by the output control.
† Waveform 2 is for an output with internal condi-
tions such that the output is low, unless disabled
by the output control.
FIGURE 1-2: T est Circuits.
© 2007 Microchip Technology Inc. DS21293C-page 5
MCP3001
V
2.0 TYPICAL PERFORMANCE CHARACTERISTICS
Note: The graphs and tables provided following this note are a statistical summary based on a limited number of
samples and are provided for informational purposes only. The performance characteristics listed herein
are not tested or guaranteed. In some graphs or tables, the data presented may be outside the specified
operating range (e.g., outside specified power supply range) and therefore outside the warranted range.
Note: Unless otherwise indicated, VDD = V
REF
= 5V, f
SAMPLE
= 200 ksps, f
= 14*Sample Rate, TA = 25°C
CLK
0.4
0.3
0.2
Positive INL
0.1
0.0
-0.1
INL (LSB)
-0.2
Negative INL
-0.3
-0.4
0 25 50 75 100 125 150 175 200 225 250
Sample Rate (ksps)
FIGURE 2-1: Integral Nonlinearity (INL) vs. Sample Rate.
1.0
0.8
0.6
0.4
0.2
0.0
-0.2
INL (LSB)
-0.4
-0.6
-0.8
-1.0
0123456
Positive INL
Negati ve INL
V
(V)
REF
0.4
= V
0.3
0.2
DD
REF
= 2.7V
Positive INL
0.1
0.0
-0.1
INL (LSB)
-0.2
Negative INL
-0.3
-0.4
0 25 50 75 100
Sample Rate (ksps)
FIGURE 2-4: Integral Nonlinearity (INL) vs. Sample
Rate (V
= 2.7V).
DD
1.0
0.8
0.6
0.4
0.2
0.0
-0.2
INL (LSB)
-0.4
-0.6
-0.8
-1.0
0.0 0.5 1.0 1.5 2.0 2.5 3.0
Positive INL
Negative INL
V
REF
(V)
VDD = V
f
SAMPLE
= 2. 7V
REF
= 75 ksps
FIGURE 2-2: Integral Nonlinearity (INL) vs. V
REF
.
FIGURE 2-5: Integral Nonlinearity (INL) vs. V
REF
(VDD = 2.7V).
0.5
VDD = V
0.4
f
0.3
0.2
0.1
0.0
-0.1
INL (LSB)
-0.2
-0.3
-0.4
-0.5
0 128 256 384 512 640 768 896 1024
SAMPLE
= 5V
REF
= 200 ksps
Digi tal Code
FIGURE 2-3: Integral Nonlinearity (INL) vs. Code (Representative Part).
DS21293C-page 6 © 2007 Microchip Technology Inc.
0.50
VDD = V
0.40
f
SAMPLE
0.30
0.20
0.10
0.00
-0.10
INL (LSB)
-0.20
-0.30
-0.40
-0.50
0 128 256 384 512 640 768 896 1024
= 2.7V
REF
= 75 ksps
Digi tal Code
FIGURE 2-6: Integral Nonlinearity (INL) vs. Code
(Representative Part, V
= 2.7V).
DD
MCP3001
Note: Unless otherwise indicated, VDD = V
0.4
0.3
0.2
0.1
0.0
-0.1
INL (LSB)
-0.2
-0.3
-0.4
-50 -25 0 25 50 75 100
Positive INL
Negative INL
REF
= 5V, f
SAMPLE
Temperature ( ° C)
FIGURE 2-7: Integral Nonlinearity (INL) vs. Temperature.
0.4
0.3
0.2
0.1
0.0
-0.1
DNL (LSB)
-0.2
-0.3
-0.4
0 25 50 75 100 125 150 175 200 225 250
Positive DNL
Negati ve DNL
Sample Rate (ksps)
= 200 ksps, f
= 14*Sample Rate,TA = 25°C
CLK
0.4
VDD = V
0.3
f
SAMPLE
0.2
0.1
0.0
-0.1
INL (LSB)
-0.2
-0.3
-0.4
-50-25 0 255075100
= 2.7V
REF
= 75 ksps
Positive INL
Negative INL
Temperat ure (°C)
FIGURE 2-10: Integral Nonlinearity (INL) vs.
VDD = V
= 2.7V).
DD
= 2.7V
REF
Positive DNL
Negative DNL
Sample Rate (ksps)
Temperature (V
0.4
0.3
0.2
0.1
0.0
-0.1
DNL (LSB)
-0.2
-0.3
-0.4
0 25 50 75 100
FIGURE 2-8: Differential Nonlinearity (DNL) vs. Sample Rate.
1.0
0.8
0.6
0.4
0.2
0.0
-0.2
-0.4
DNL (LSB)
-0.6
-0.8
-1.0
012345
Positive DNL
Negative DNL
V
(V)
REF
FIGURE 2-9: Differential Nonlinearity (DNL) vs.
.
V
REF
FIGURE 2-11: Differential Nonlinearity (DNL) vs.
Sample Rate (V
1.0
0.8
0.6
0.4
0.2
0.0
-0.2
DNL (LSB)
-0.4
-0.6
-0.8
-1.0
0.0 0.5 1.0 1.5 2.0 2.5 3.0
FIGURE 2-12: Differe ntia l Nonl in eari t y (DN L) vs. V
= 2.7V).
DD
Pos i t i ve DNL
Negati ve DNL
V
REF
(V)
VDD = V
f
SAMPLE
= 2.7V
REF
= 75 ks ps
REF
(VDD = 2.7V).
© 2007 Microchip Technology Inc. DS21293C-page 7
MCP3001
Note: Unless otherwise indicated, VDD = V
0.5
VDD = V
0.4
f
0.3
0.2
0.1
0.0
-0.1
DNL (LSB)
-0.2
-0.3
-0.4
-0.5
0 128 256 384 512 640 768 896 1024
SAMPLE
= 5V
REF
= 200 ksps
REF
= 5V, f
SAMPLE
Digit al Code
FIGURE 2-13: Differential Nonlinearity (DNL) vs. Code (Representative Part).
0.3
0.2
0.1
0.0
-0.1
DNL (LSB)
-0.2
-0.3
-50 -25 0 25 50 75 100
Positive DNL
Negative DNL
= 200 ksps, f
= 14*Sample Rate,TA = 25°C
CLK
0.5
VDD = V
0.4
f
SAMPLE
0.3
0.2
0.1
0.0
-0.1
DNL (LSB)
-0.2
-0.3
-0.4
-0.5
0 128 256 384 512 640 768 896 1024
= 2.7V
REF
= 75 ksps
Digi t al Code
FIGURE 2-16: Differential Nonlinearity (DNL) vs.
Code (Representative Part, V
0.3
VDD = V
0.2
f
SAMPLE
0.1
0.0
-0.1
DNL (LSB)
-0.2
-0.3
-50 -25 0 25 50 75 100
= 2. 7V
REF
= 75 ks ps
= 2.7V).
DD
Pos i tive DNL
Negative DNL
Tempe r at ure (°C)
FIGURE 2-14: Differential Nonlinearity (DNL) vs. Temperature.
1.0
0.8
0.6
0.4
0.2
0.0
-0.2
-0.4
Gain Error (LSB)
-0.6
-0.8
-1.0
012345
FIGURE 2-15: Gain Error vs. V
VDD = 5V
f
SAMPLE
VDD = 2.7V
f
SAMPLE
= 200 ksps
V
= 75 ksps
(V)
REF
REF
.
Temperatur e (° C)
FIGURE 2-17: Differential Nonlinearity (DNL) vs.
Temperature (V
8
7
6
5
4
3
2
Offset Error (LSB)
1
0
0.0 1.0 2.0 3.0 4.0 5.0
FIGURE 2-18: Offset Error vs. V
= 2.7V).
DD
VDD = 5V
f
SAMPLE
= 200 k sps
VDD = 2.7V
f
SAMPLE
V
= 75 k sps
(V)
REF
REF
.
DS21293C-page 8 © 2007 Microchip Technology Inc.
MCP3001
SAMPLE
Input Signal Level (dB)
Note: Unless otherwise indicated, VDD = V
0.1
VDD = V
f
0.0
-0.1
-0.2
Gain Error (LSB)
-0.3
-0.4
-50 -25 0 25 50 75 100
SAMPLE
= 2.7V
REF
= 75 ks ps
VDD = V
f
SAMPLE
= 5V
REF
= 200 k sps
Temperature (°C)
FIGURE 2-19: Gain Error vs. Temperature.
70
60
50
SNR (dB)
40
30
20
VDD = V
f
SAMPLE
= 2. 7V
REF
= 75 ksps
10
0
1 10 100
Input Fr equency ( kHz)
VDD = V
f
SAMPLE
REF
= 200 k sps
REF
= 5V
= 5V, f
SAMPLE
= 200 ksps, f
= 14*Sample Rate,TA = 25°C
CLK
1.0
VDD = V
0.9
f
0.8
0.7
0.6
0.5
0.4
0.3
0.2
Offset Error (LSB)
0.1
0.0
-50 -25 0 25 50 75 100
= 5V
REF
= 200 k sps
VDD = V
= 75 k sps
f
SAMPLE
REF
= 2.7V
Temperat ur e (°C)
FIGURE 2-22: Offset Error vs. Temperature.
70
60
50
40
30
SINAD (dB)
20
VDD = V
f
SAMPLE
10
0
1 10 100
= 2.7V
REF
= 75 ksps
Input Fr equ ency ( k Hz)
VDD = V
f
SAMPLE
= 5V
REF
= 200 ksps
FIGURE 2-20: Signal to Noise Ratio (SNR) vs. Input Frequency.
0
-10
-20
THD (dB)
-30
-40
-50
-60
-70
VDD = V
f
SAMPLE
= 2.7V
REF
= 75 ksps
VDD = V
f
SAMPLE
= 5V
REF
= 200 ksps
-80
-90
-100
110100
Input Frequency (kHz)
FIGURE 2-21: Total Harmonic Distortion (THD) vs. Input Frequency.
FIGURE 2-23: Signal to Noise Ratio and Distortion (SINAD) vs. Input Frequency.
80
70
VDD = V
60
f
50
40
30
SINAD (dB)
20
10
0
-40 -35 -30 -25 -20 -15 -10 -5 0
SAMPLE
= 5V
REF
= 200 ksps
VDD = V
f
SAMPLE
= 2.7V
REF
= 75 ksps
FIGURE 2-24: Signal to Noise and Distortion (SINAD) vs. Input Signal Level.
© 2007 Microchip Technology Inc. DS21293C-page 9
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