Page 1
SEMICONDUCTOR TECHNICAL DATA
1
REV 6
Motorola, Inc. 1995
10/95
% !%$ $ &$
$$"" !%$#
High–Performance Silicon–Gate CMOS
The MC54/74HC132A is identical in pinout to the LS132. The device
inputs are compatible with standard CMOS outputs; with pullup resistors,
they are compatible with LSTTL outputs.
The HC132A can be used to enhance noise immunity or to square up
slowly changing waveforms.
• Output Drive Capability: 10 LSTTL Loads
• Outputs Directly Interface to CMOS, NMOS, and TTL
• Operating Voltage Range: 2.0 to 6.0 V
• Low Input Current: 1.0 µA
• High Noise Immunity Characteristic of CMOS Devices
• In Compliance with the Requirements Defined by JEDEC Standard
No. 7A
• Chip Complexity: 72 FETs or 18 Equivalent Gates
LOGIC DIAGRAM
A1
B1
Y1
3
2
1
PIN 14 = V
CC
PIN 7 = GND
Y = AB
A2
B2
Y2
6
5
4
A3
B3
Y3
8
10
9
A4
B4
Y4
11
13
12
FUNCTION TABLE
PIN ASSIGNMENT
Inputs Output
A B Y
L L H
L H H
H L H
H H L
11
12
13
14
8
9
105
4
3
2
1
7
6
B3
Y4
A4
B4
V
CC
Y3
A3
A2
Y1
B1
A1
GND
Y2
B2
D SUFFIX
SOIC PACKAGE
CASE 751A–03
N SUFFIX
PLASTIC PACKAGE
CASE 646–06
MC54HCXXXAJ
MC74HCXXXAN
MC74HCXXXAD
Ceramic
Plastic
SOIC
1
14
1
14
J SUFFIX
CERAMIC PACKAGE
CASE 632–08
1
14
ORDERING INFORMATION
Page 2
MC54/74HC132A
MOTOROLA High–Speed CMOS Logic Data
DL129 — Rev 6
2
MAXIMUM RATINGS*
Symbol
Parameter
Value
Unit
V
CC
DC Supply Voltage (Referenced to GND)
– 0.5 to + 7.0
V
V
in
DC Input Voltage (Referenced to GND)
– 1.5 to VCC + 1.5
V
V
out
DC Output Voltage (Referenced to GND)
– 0.5 to VCC + 0.5
V
I
in
DC Input Current, per Pin
± 20
mA
I
out
DC Output Current, per Pin
± 25
mA
I
CC
DC Supply Current, VCC and GND Pins
± 50
mA
P
D
Power Dissipation in Still Air,Plastic or Ceramic DIP†
SOIC Package†
750
500
mW
T
stg
Storage Temperature
– 65 to + 150
_
C
T
L
Lead Temperature, 1 mm from Case for 10 Seconds
(Plastic DIP or SOIC Package)
(Ceramic DIP)
260
300
_
C
*Maximum Ratings are those values beyond which damage to the device may occur.
Functional operation should be restricted to the Recommended Operating Conditions.
†Derating — Plastic DIP: – 10 mW/_C from 65_ to 125_C
Ceramic DIP: – 10 mW/_C from 100_ to 125_C
SOIC Package: – 7 mW/_C from 65_ to 125_C
For high frequency or heavy load considerations, see Chapter 2 of the Motorola High–Speed CMOS Data Book (DL129/D).
RECOMMENDED OPERATING CONDITIONS
Symbol
Parameter
Min
Max
Unit
V
CC
DC Supply Voltage (Referenced to GND)
2.0
6.0
V
Vin, V
out
DC Input Voltage, Output Voltage
(Referenced to GND)
0
V
CC
V
T
A
Operating Temperature, All Package Types
– 55
+ 125
_
C
tr, t
f
Input Rise and Fall Time (Figure 1)
—
no
limit*
ns
*When Vin X 0.5 VCC, ICC >> quiescent current.
DC ELECTRICAL CHARACTERISTICS (Voltages Referenced to GND)
Guaranteed Limit
Symbol
Parameter
Test Conditions
V
CC
V
25_C
– 40_C to
+ 85_C
– 55_C to
+ 125_C
Unit
VT+ max
Maximum Positive–Going
Input Threshold Voltage
(Figure 3)
V
out
= 0.1 V
|I
out
| v 20 µA
2.0
4.5
6.0
1.5
3.15
4.2
1.5
3.15
4.2
1.5
3.15
4.2
V
VT+ min
Minimum Positive–Going
Input Threshold Voltage
(Figure 3)
V
out
= 0.1 V
|I
out
| v 20 µA
2.0
4.5
6.0
1.0
2.3
3.0
0.95
2.25
2.95
0.95
2.25
2.95
V
VT– max
Maximum Negative–Going
Input Threshold Voltage
(Figure 3)
V
out
= VCC – 0.1 V
|I
out
| v 20 µA
2.0
4.5
6.0
0.9
2.0
2.6
0.95
2.05
2.65
0.95
2.05
2.65
V
VT– min
Minimum Negative–Going
Input Threshold Voltage
(Figure 3)
V
out
= VCC – 0.1 V
|I
out
| v 20 µA
2.0
4.5
6.0
0.3
0.9
1.2
0.3
0.9
1.2
0.3
0.9
1.2
V
VHmax
Note 2
Maximum Hysteresis Voltage
(Figure 3)
V
out
= 0.1 V or VCC – 0.1 V
|I
out
| v 20 µA
2.0
4.5
6.0
1.2
2.25
3.0
1.2
2.25
3.0
1.2
2.25
3.0
V
VHmin
Note 2
Minimum Hysteresis Voltage
(Figure 3)
V
out
= 0.1 V or VCC – 0.1 V
|I
out
| v 20 µA
2.0
4.5
6.0
0.2
0.4
0.5
0.2
0.4
0.5
0.2
0.4
0.5
V
NOTE: 1. VHmin > (VT+ min) – (VT– max); VHmax = (VT+ max) + (VT– min).
NOTE: Information on typical parametric values can be found in Chapter 2 of the Motorola High–Speed CMOS Data Book (DL129/D).
This device contains protection
circuitry to guard against damage
due to high static voltages or electric
fields. However, precautions must
be taken to avoid applications of any
voltage higher than maximum rated
voltages to this high–impedance circuit. For proper operation, Vin and
V
out
should be constrained to the
range GND v (Vin or V
out
) v VCC.
Unused inputs must always be
tied to an appropriate logic voltage
level (e.g., either GND or VCC).
Unused outputs must be left open.
Page 3
MC54/74HC132A
High–Speed CMOS Logic Data
DL129 — Rev 6
3 MOTOROLA
DC ELECTRICAL CHARACTERISTICS (Voltages Referenced to GND)
Guaranteed Limit
Symbol
Parameter
Test Conditions
V
CC
V
– 55 to
25_C
v
85_Cv 125_C
Unit
Vinv
VT– min or VT+ max
|I
out
| v 20 µA
2.0
4.5
6.0
1.9
4.4
5.9
1.9
4.4
5.9
1.9
4.4
5.9
Vinv
–VT– min or VT+ max
|I
out
| v 4.0 mA
|I
out
| v 5.2 mA
4.5
6.0
3.98
5.48
3.84
5.34
3.7
5.2
Vin ≥VT+ max
|I
out
| v 20 µA
2.0
4.5
6.0
0.1
0.1
0.1
0.1
0.1
0.1
0.1
0.1
0.1
Vin≥VT+ max |I
out
| v 4.0 mA
|I
out
| v 5.2 mA
4.5
6.0
0.26
0.26
0.33
0.33
0.4
0.4
I
in
Maximum Input Leakage Current
Vin = VCC or GND
6.0
± 0.1
± 1.0
± 1.0
µA
I
CC
Maximum Quiescent Supply
Current (per Package)
Vin = VCC or GND
I
out
= 0 µA
6.0
1.0
10
40
µA
AC ELECTRICAL CHARACTERISTICS (C
L
= 50 pF, Input tr = tf = 6.0 ns)
Guaranteed Limit
Symbol
Parameter
V
CC
V
– 55 to
25_C
v
85_Cv 125_C
Unit
t
PLH
,
t
PHL
Maximum Propagation Delay, Input A or B to Output Y
(Figures 1 and 2)
2.0
4.5
6.0
125
25
21
155
31
26
190
38
32
ns
t
TLH
,
t
THL
Maximum Output Transition Time, Any Output
(Figures 1 and 2)
2.0
4.5
6.0
75
15
13
95
19
16
110
22
19
ns
C
in
Maximum Input Capacitance
—
10
10
10
pF
NOTE: For propagation delays with loads other than 50 pF, and information on typical parametric values, see Chapter 2 of the Motorola High–
Speed CMOS Data Book (DL129/D).
Typical @ 25°C, VCC = 5.0 V
24
*Used to determine the no–load dynamic power consumption: PD = CPD V
CC
2
f + ICC VCC. For load considerations, see Chapter 2 of the
Motorola High–Speed CMOS Data Book (DL129/D).
Figure 1. Switching Waveforms
t
r
V
CC
GND
90%
50%
10%
90%
50%
10%
INPUT
A OR B
Y
t
PHL
t
PLH
t
THL
t
TLH
*Includes all probe and jig capacitance
Figure 2. Test Circuit
CL*
TEST POINT
DEVICE
UNDER
TEST
OUTPUT
t
f
V
OH
V
OL
Minimum High–Level Output
Voltage
Maximum Low–Level Output
Voltage
V
V
C
PD
Power Dissipation Capacitance (Per Gate)*
pF
Page 4
MC54/74HC132A
MOTOROLA High–Speed CMOS Logic Data
DL129 — Rev 6
4
Figure 3. Typical Input Threshold, VT+, V
T–
Versus Power Supply Voltage
Figure 4. Typical Schmitt–Trigger Applications
T
, TYPICAL INPUT THRESHOLD VOLTAGE (VOLTS)V
4
3
2
1
2 3 4 5 6
VCC, POWER SUPPLY VOLTAGE (VOLTS)
VHtyp
VHtyp = (V
T +
typ) – (V
T –
typ)
(a) A SCHMITT TRIGGER SQUARES UP INPUTS
(a) WITH SLOW RISE AND FALL TIMES
(b) A SCHMITT TRIGGER OFFERS MAXIMUM NOISE
(b) IMMUNITY
V
in
V
out
V
H
V
CC
V
T +
V
T –
GND
V
OH
V
OL
V
in
V
H
V
out
V
CC
V
T +
V
T –
GND
V
OH
V
OL
V
CC
V
in
V
out
Page 5
MC54/74HC132A
High–Speed CMOS Logic Data
DL129 — Rev 6
5 MOTOROLA
OUTLINE DIMENSIONS
J SUFFIX
CERAMIC DIP PACKAGE
CASE 632–08
ISSUE Y
MIN MINMAX MAX
INCHES MILLIMETERS
DIM
A
B
C
D
F
G
J
K
L
M
N
0.785
0.280
0.200
0.020
0.065
0.015
0.170
15
°
0.040
0.750
0.245
0.155
0.015
0.055
0.008
0.125
0
°
0.020
19.94
7.11
5.08
0.50
1.65
0.38
4.31
15
°
1.01
19.05
6.23
3.94
0.39
1.40
0.21
3.18
0
°
0.51
0.100 BSC
0.300 BSC
2.54 BSC
7.62 BSC
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
3. DIMENSION L TO CENTER OF LEAD WHEN
FORMED PARALLEL.
4. DIMESNION F MAY NARROW TO 0.76 (0.030)
WHERE THE LEAD ENTERS THE CERAMIC
BODY.
14 8
1 7
-A-
-B-
-T-
SEATING
PLANE
F G
N
K
C
L
M
0.25 (0.010) T A
M
S
0.25 (0.010) T B
M
S
J 14 PL
D 14 PL
N SUFFIX
PLASTIC DIP PACKAGE
CASE 646–06
ISSUE L
NOTES:
1. LEADS WITHIN 0.13 (0.005) RADIUS OF TRUE
POSITION AT SEATING PLANE AT MAXIMUM
MATERIAL CONDITION.
2. DIMENSION L TO CENTER OF LEADS WHEN
FORMED PARALLEL.
3. DIMENSION B DOES NOT INCLUDE MOLD
FLASH.
4. ROUNDED CORNERS OPTIONAL.
1 7
14 8
B
A
F
H G D
K
C
N
L
J
M
SEATING
PLANE
DIM MIN MAX MIN MAX
MILLIMETERSINCHES
A 0.715 0.770 18.16 19.56
B 0.240 0.260 6.10 6.60
C 0.145 0.185 3.69 4.69
D 0.015 0.021 0.38 0.53
F 0.040 0.070 1.02 1.78
G 0.100 BSC 2.54 BSC
H 0.052 0.095 1.32 2.41
J 0.008 0.015 0.20 0.38
K 0.115 0.135 2.92 3.43
L 0.300 BSC 7.62 BSC
M 0 10 0 10
N 0.015 0.039 0.39 1.01
_ _ _ _
D SUFFIX
PLASTIC SOIC PACKAGE
CASE 751A–03
ISSUE F
MIN MINMAX MAX
MILLIMETERS INCHES
DIM
A
B
C
D
F
G
J
K
M
P
R
8.55
3.80
1.35
0.35
0.40
0.19
0.10
0
°
5.80
0.25
8.75
4.00
1.75
0.49
1.25
0.25
0.25
7
°
6.20
0.50
0.337
0.150
0.054
0.014
0.016
0.008
0.004
0
°
0.228
0.010
0.344
0.157
0.068
0.019
0.049
0.009
0.009
7°
0.244
0.019
1.27 BSC 0.050 BSC
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: MILLIMETER.
3. DIMENSIONS A AND B DO NOT INCLUDE
MOLD PROTRUSION.
4. MAXIMUM MOLD PROTRUSION 0.15 (0.006)
PER SIDE.
5. DIMENSION D DOES NOT INCLUDE DAMBAR
PROTRUSION. ALLOWABLE DAMBAR
PROTRUSION SHALL BE 0.127 (0.005) TOTAL
IN EXCESS OF THE D DIMENSION AT
MAXIMUM MATERIAL CONDITION.
–A–
–B–
P 7 PL
G
C
K
SEATING
PLANE
D 14 PL
M
J
R
X 45°
1
7
814
0.25 (0.010) T B A
M
S S
B0.25 (0.010)
M M
F
Page 6
MC54/74HC132A
MOTOROLA High–Speed CMOS Logic Data
DL129 — Rev 6
6
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the suitability of its products for any particular purpose, nor does Motorola assume any liability arising out of the application or use of any product or circuit,
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MC54/74HC132A/D
*MC54/74HC132A/D*
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